Die Produkte nexperia usa inc.

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PMZ550UNEYL PMZ550UNEYL PMZ550UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 590MA DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 32458 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
24+ 1.09 EUR
32+ 0.82 EUR
100+ 0.46 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
2000+ 0.21 EUR
5000+ 0.18 EUR
Nexperia USA Inc. Description: MOSFET N-CH 30V SOT883
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Vgs (Max): ±8V
auf Bestellung 8007 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
NX7002BKMYL NX7002BKMYL NX7002BKM.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 350MA DFN1006-3
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 350mW (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 140000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 144872 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.097 EUR
PMZ130UNEYL PMZ130UNEYL PMZ130UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
10000+ 0.16 EUR
Nexperia USA Inc. Description: MOSFET N-CH 20V 1.8A DFN1006-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
auf Bestellung 19637 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
34+ 0.79 EUR
100+ 0.44 EUR
500+ 0.29 EUR
1000+ 0.23 EUR
2000+ 0.2 EUR
5000+ 0.18 EUR
PMZ290UNEYL PMZ290UNEYL PMZ290UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 20V 1A
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1687532 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 20V 1A XQFN3
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 7625 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1687532 Stücke - Preis und Lieferfrist anzeigen
PMCM440VNEZ PMCM440VNEZ PMCM440VNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 12V 3.9A 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.78x0.78)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 6V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 110 Stücke - Preis und Lieferfrist anzeigen
PMZ350UPEYL PMZ350UPEYL PMZ350UPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 1A DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMV65XPEAR PMV65XPEAR PMV65XPEA.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 2.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22516 Stücke - Preis und Lieferfrist anzeigen
PMV37EN2R PMV37EN2R PMV37EN2.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 4.5A TO236AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 43162 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.25 EUR
6000+ 0.22 EUR
PMV130ENEAR PMV130ENEAR PMV130ENEA.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 2.1A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 460mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMV16XNR PMV16XNR PMV16XN.pdf Nexperia USA Inc. Description: MOSFET N-CH 20V 6.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 20.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PMV16
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35272 Stücke - Preis und Lieferfrist anzeigen
BUK98150-55/CUF BUK98150-55/CUF BUK98150-55.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 5.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDZ30B,115 PDZ30B,115 PHGLS19616-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 30V 400MW SOD323
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 8774 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
50+ 0.52 EUR
56+ 0.47 EUR
103+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
PMV48XPAR PMV48XPAR PMV48XPA.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 3.5A TO236AB
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10689 Stücke - Preis und Lieferfrist anzeigen
PHK04P02T,518 PHK04P02T,518 PHK04P02T.pdf Nexperia USA Inc. Description: MOSFET P-CH 16V 4.66A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 193508 Stücke - Preis und Lieferfrist anzeigen
BUK9875-100A/CUX BUK9875-100A/CUX BUK9875-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12550 Stücke - Preis und Lieferfrist anzeigen
BZX84J-B30,115 BZX84J-B30,115 BZX84J_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 30V 550MW SOD323F
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
auf Bestellung 20890 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 57070 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
37+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Nexperia USA Inc. Description: DIODE ZENER 30V 550MW SOD323F
Impedance (Max) (Zzt): 40 Ohms
Power - Max: 550mW
Tolerance: ±2%
Base Part Number: BZX84JB30
Supplier Device Package: SOD-323F
Voltage - Zener (Nom) (Vz): 30V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Current - Reverse Leakage @ Vr: 50nA @ 21V
auf Bestellung 11684 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 57070 Stücke - Preis und Lieferfrist anzeigen
BZX585-B2V4,115 BZX585-B2V4,115 BZX585_SERIES.pdf Nexperia USA Inc. Description: DIODE ZENER 2.4V 300MW SOD523
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16QAZ BAS16QAZ BAS16QA.pdf Nexperia USA Inc. Description: DIODE GP 100V 290MA DFN1010D-3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1010D-3
Current - Average Rectified (Io): 290mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN063-150D,118 PSMN063-150D,118 PSMN063-150D.pdf Nexperia USA Inc. Description: MOSFET N-CH 150V 29A DPAK
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX79-C6V8,113 BZX79-C6V8,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 6.8V 400MW ALF2
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
auf Bestellung 7026 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4490 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C6V8,133 BZX79-C6V8,133 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 6.8V 400MW ALF2
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 648 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
BZX79-B5V6,113 BZX79-B5V6,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 5.6V 400MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 10151 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 291170 Stücke - Preis und Lieferfrist anzeigen
46+ 0.57 EUR
50+ 0.52 EUR
100+ 0.28 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.091 EUR
BZX84-B47,215 BZX84-B47,215 PHGLS29437-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 47V 250MW TO236AB
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
auf Bestellung 1420 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8110 Stücke - Preis und Lieferfrist anzeigen
50+ 0.52 EUR
56+ 0.47 EUR
102+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
BZV85-C12,133 BZV85-C12,133 NEXP-S-A0002883904-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 12V 1W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 200°C
auf Bestellung 3442 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10070 Stücke - Preis und Lieferfrist anzeigen
28+ 0.96 EUR
33+ 0.79 EUR
100+ 0.42 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
BZT52H-B27,115 BZT52H-B27,115 NEXP-S-A0002882686-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 27V 375MW SOD123F
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 375 mW
Part Status: Active
Supplier Device Package: SOD-123F
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 89199 Stücke - Preis und Lieferfrist anzeigen
BZT52H-B6V8,115 BZT52H-B6V8,115 NEXP-S-A0002882686-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 6.8V 375MW SOD123F
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 375 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2790 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4660 Stücke - Preis und Lieferfrist anzeigen
46+ 0.57 EUR
56+ 0.47 EUR
105+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
PDZ11B,115 PDZ11B,115 PHGLS19616-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 11V 400MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 2460 Stücke
Lieferzeit 21-28 Tag (e)
48+ 0.55 EUR
53+ 0.49 EUR
100+ 0.27 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
BZV55-B30,115 BZV55-B30,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 30V 500MW LLDS
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2380 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 246522 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
53+ 0.5 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
TDZ2V7J,115 TDZ2V7J,115 TDZXJ_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 2.7V 500MW SOD323F
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5098 Stücke - Preis und Lieferfrist anzeigen
PMEG3010ESBZ PMEG3010ESBZ PMEG3010ESB.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG3010ESBYL PMEG3010ESBYL PMEG3010ESB.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX84J-B6V8,115 BZX84J-B6V8,115 BZX84J_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 6.8V 550MW SOD323F
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 1385 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.04 EUR
34+ 0.78 EUR
100+ 0.44 EUR
500+ 0.29 EUR
1000+ 0.23 EUR
BZX84J-B2V7,115 BZX84J-B2V7,115 BZX84J_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 2.7V 550MW SOD323F
Power - Max: 550 mW
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19727 Stücke - Preis und Lieferfrist anzeigen
BZX84-B15/DG/B4R BZX84-B15/DG/B4R PHGLS29437-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 15V 250MW TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MM3Z10VT1GX MM3Z10VT1GX MM3Z_SER.pdf Nexperia USA Inc. Description: VOLTAGE REGULATOR DIODES
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Supplier Device Package: SOD-323
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 10 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
PMEG3010AESBZ PMEG3010AESBZ PMEG3010AESB.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMZ390UN,315 PMZ390UN,315 PMZ390UN.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 1.78A DFN1006-3
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 195400 Stücke - Preis und Lieferfrist anzeigen
PMEG45U10EPDAZ PMEG45U10EPDAZ PMEG45U10EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 45V 10A CFP15
Current - Reverse Leakage @ Vr: 20 mA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1924000 Stücke - Preis und Lieferfrist anzeigen
PMEG100V100ELPDAZ PMEG100V100ELPDAZ PMEG100V100ELPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 100V 10A CFP15
Operating Temperature - Junction: 175°C (Max)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Reverse Recovery Time (trr): 14 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4710 Stücke - Preis und Lieferfrist anzeigen
PMEG100V080ELPDAZ PMEG100V080ELPDAZ PMEG100V080ELPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Tape & Reel (TR)
Base Part Number: PMEG100
Manufacturer: Nexperia USA Inc.
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Reverse Recovery Time (trr): 10ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 850mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4430 Stücke - Preis und Lieferfrist anzeigen
PMEG45A10EPDZ PMEG45A10EPDZ PMEG45A10EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 45V 10A CFP15
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 240pF @ 10V, 1MHz
Reverse Recovery Time (trr): 13 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
PMZB1200UPEYL PMZB1200UPEYL PMZB1200UPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 30V 410MA DFN1006B-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 650547 Stücke - Preis und Lieferfrist anzeigen
PMZB550UNEYL PMZB550UNEYL PMZB550UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18030 Stücke - Preis und Lieferfrist anzeigen
PMZ390UNEYL PMZ390UNEYL PMZ390UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 900MA DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMZB390UNEYL PMZB390UNEYL PMZB390UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 900MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39740 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.19 EUR
PMZ200UNEYL PMZ200UNEYL PMZ200UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 1.4A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMZB200UNEYL PMZB200UNEYL PMZB200UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 39900 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.21 EUR
PMZ600UNEYL PMZ600UNEYL PMZ600UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 20V 600MA DFN1006-3
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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PMZ370UNEYL PMZ370UNEYL PMZ370UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 900MA DFN1006-3
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-883
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14699 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.15 EUR
Nexperia USA Inc. Description: MOSFET N-CH 30V 900MA DFN1006-3
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 1.05V @ 250µA
auf Bestellung 20558 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14699 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
35+ 0.75 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
2000+ 0.19 EUR
5000+ 0.17 EUR
PMZ950UPEYL PMZ950UPEYL PMZ950UPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 500MA DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 383660 Stücke - Preis und Lieferfrist anzeigen
PMZ320UPEYL PMZ320UPEYL PMZ320UPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 30V 1A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
10000+ 0.17 EUR
Nexperia USA Inc. Description: MOSFET P-CH 30V 1A DFN1006-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 39200 Stücke
Lieferzeit 21-28 Tag (e)
23+ 1.14 EUR
31+ 0.84 EUR
100+ 0.48 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
2000+ 0.21 EUR
5000+ 0.19 EUR
PMZB320UPEYL PMZB320UPEYL PMZB320UPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 30V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 90000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5795 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.19 EUR
Nexperia USA Inc. Description: MOSFET P-CH 30V 1A DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
auf Bestellung 106375 Stücke
Lieferzeit 21-28 Tag (e)
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21+ 1.27 EUR
28+ 0.94 EUR
100+ 0.53 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.23 EUR
5000+ 0.21 EUR
PMZB950UPEYL PMZB950UPEYL PMZB950UPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 500MA DFN1006B-3
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET P-CH 20V 500MA DFN1006B-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 216 Stücke
Lieferzeit 21-28 Tag (e)
23+ 1.14 EUR
31+ 0.87 EUR
100+ 0.54 EUR
PMV65XPER PMV65XPER PMV65XPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 2.8A TO236AB
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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PMXB75UPEZ PMXB75UPEZ PMXB75UPE.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 2.9A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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PMV75UP,215 PMV75UP,215 PMV75UP.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 2.5A TO236AB
Power Dissipation (Max): 490mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMV50XPR PMV50XPR PMV50XP.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 3.6A TO236AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 490mW (Ta), 4.63W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMCM650VNEZ PMCM650VNEZ PMCM650VNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 12V 4WLCSP
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.48x.98)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG100V100ELPDZ PMEG100V100ELPDZ PMEG100V100ELPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 100V 10A CFP15
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Reverse Recovery Time (trr): 14 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG4010ESBYL PMEG4010ESBYL PMEG4010ESB.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN1006-2
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Reverse Recovery Time (trr): 2.9 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15238 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.13 EUR
PMEG45T15EPDZ PMEG45T15EPDZ PMEG45T15EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 45V 15A CFP15
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BUK7880-55A/CUX BUK7880-55A/CUX BUK7880-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 7A SOT223
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9840-55/CUX BUK9840-55/CUX BUK9840-55.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 5A/10.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK964R2-80E,118 BUK964R2-80E,118 BUK964R2-80E.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 120A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
4+ 8.48 EUR
10+ 7.6 EUR
100+ 6.23 EUR
BZX79-C12,113 BZX79-C12,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 12V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 47201 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 406670 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C13,133 BZX79-C13,133 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 13V 400MW ALF2
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 8271 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 170000 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C7V5,113 BZX79-C7V5,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 7.5V 400MW ALF2
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
auf Bestellung 16699 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 459490 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C75,113 BZX79-C75,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 75V 400MW ALF2
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 200°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7260 Stücke - Preis und Lieferfrist anzeigen
BZX79-C9V1,113 BZX79-C9V1,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 9.1V 400MW ALF2
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 1590 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 438340 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
BZX79-C6V2,113 BZX79-C6V2,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 6.2V 400MW ALF2
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 14476 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 416120 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C2V4,113 BZX79-C2V4,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 2.4V 400MW ALF2
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Zener (Nom) (Vz): 2.4 V
Power - Max: 400 mW
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 22000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 344570 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
70+ 0.37 EUR
128+ 0.2 EUR
500+ 0.13 EUR
1000+ 0.086 EUR
2000+ 0.073 EUR
5000+ 0.066 EUR
BZX79-C11,133 BZX79-C11,133 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 11V 400MW ALF2
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
auf Bestellung 8607 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 189675 Stücke - Preis und Lieferfrist anzeigen
72+ 0.36 EUR
79+ 0.33 EUR
146+ 0.18 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
2000+ 0.064 EUR
5000+ 0.057 EUR
BZX79-C3V9,113 BZX79-C3V9,113 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 3.9V 400MW ALF2
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 9999 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 239730 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C3V9,133 BZX79-C3V9,133 BZX79.pdf Nexperia USA Inc. Description: DIODE ZENER 3.9V 400MW ALF2
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 4598 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 180 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
70+ 0.37 EUR
129+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.085 EUR
2000+ 0.072 EUR
PMEG045V050EPDAZ PMEG045V050EPDAZ PMEG045V050EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 45V 5A CFP15
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 966908 Stücke - Preis und Lieferfrist anzeigen
PMEG060V050EPDAZ PMEG060V050EPDAZ PMEG060V050EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 60V 5A CFP15
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 175pF @ 10V, 1MHz
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5155 Stücke - Preis und Lieferfrist anzeigen
PMEG045V150EPDZ PMEG045V150EPDZ PMEG045V150EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 45V 15A CFP15
Capacitance @ Vr, F: 610pF @ 10V, 1MHz
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 900 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6077 Stücke - Preis und Lieferfrist anzeigen
PMEG050T150EPDAZ PMEG050T150EPDAZ PMEG050T150EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 50V 15A CFP15
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8830 Stücke - Preis und Lieferfrist anzeigen
PMEG050V150EPDAZ PMEG050V150EPDAZ PMEG050V150EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 50V 15A CFP15
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: 570pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8244 Stücke - Preis und Lieferfrist anzeigen
PMEG4010ESBZ PMEG4010ESBZ PMEG4010ESB.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9ns
Current - Reverse Leakage @ Vr: 40µA @ 40V
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG45T15EPDAZ PMEG45T15EPDAZ PMEG45T15EPD.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 45V 15A CFP15
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3402 Stücke - Preis und Lieferfrist anzeigen
1500+ 1.03 EUR
3000+ 0.97 EUR
BUK9880-55,135 BUK9880-55,135 BUK9880-55.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 7.5A SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
PMZ550UNEYL PMZ550UNE.pdf
PMZ550UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 590MA DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 32458 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38007 Stücke - Preis und Lieferfrist anzeigen
24+ 1.09 EUR
32+ 0.82 EUR
100+ 0.46 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
2000+ 0.21 EUR
5000+ 0.18 EUR
PMZ550UNEYL PMZ550UNE.pdf
PMZ550UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V SOT883
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Vgs (Max): ±8V
auf Bestellung 8007 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 62458 Stücke - Preis und Lieferfrist anzeigen
NX7002BKMYL NX7002BKM.pdf
NX7002BKMYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 350MA DFN1006-3
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 350mW (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 140000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 144872 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.097 EUR
PMZ130UNEYL PMZ130UNE.pdf
PMZ130UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19637 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.16 EUR
PMZ130UNEYL PMZ130UNE.pdf
PMZ130UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
auf Bestellung 19637 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
25+ 1.07 EUR
34+ 0.79 EUR
100+ 0.44 EUR
500+ 0.29 EUR
1000+ 0.23 EUR
2000+ 0.2 EUR
5000+ 0.18 EUR
PMZ290UNEYL PMZ290UNE.pdf
PMZ290UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1A
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1695157 Stücke - Preis und Lieferfrist anzeigen
PMZ290UNEYL PMZ290UNE.pdf
PMZ290UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1A XQFN3
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 7625 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1687532 Stücke - Preis und Lieferfrist anzeigen
PMCM440VNEZ PMCM440VNE.pdf
PMCM440VNEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 3.9A 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.78x0.78)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 6V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 110 Stücke - Preis und Lieferfrist anzeigen
PMZ350UPEYL PMZ350UPE.pdf
PMZ350UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMV65XPEAR PMV65XPEA.pdf
PMV65XPEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22516 Stücke - Preis und Lieferfrist anzeigen
PMV37EN2R PMV37EN2.pdf
PMV37EN2R
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A TO236AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 43162 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.25 EUR
6000+ 0.22 EUR
PMV130ENEAR PMV130ENEA.pdf
PMV130ENEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.1A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 460mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMV16XNR PMV16XN.pdf
PMV16XNR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 6.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 20.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PMV16
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35272 Stücke - Preis und Lieferfrist anzeigen
BUK98150-55/CUF BUK98150-55.pdf
BUK98150-55/CUF
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDZ30B,115 PHGLS19616-1.pdf?t.download=true&u=5oefqw
PDZ30B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 400MW SOD323
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 8774 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
50+ 0.52 EUR
56+ 0.47 EUR
103+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
PMV48XPAR PMV48XPA.pdf
PMV48XPAR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.5A TO236AB
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10689 Stücke - Preis und Lieferfrist anzeigen
PHK04P02T,518 PHK04P02T.pdf
PHK04P02T,518
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 16V 4.66A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 193508 Stücke - Preis und Lieferfrist anzeigen
BUK9875-100A/CUX BUK9875-100A.pdf
BUK9875-100A/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12550 Stücke - Preis und Lieferfrist anzeigen
BZX84J-B30,115 BZX84J_SER.pdf
BZX84J-B30,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 550MW SOD323F
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
auf Bestellung 20890 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 68754 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
37+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
BZX84J-B30,115 BZX84J_SER.pdf
BZX84J-B30,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 550MW SOD323F
Impedance (Max) (Zzt): 40 Ohms
Power - Max: 550mW
Tolerance: ±2%
Base Part Number: BZX84JB30
Supplier Device Package: SOD-323F
Voltage - Zener (Nom) (Vz): 30V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Current - Reverse Leakage @ Vr: 50nA @ 21V
auf Bestellung 11684 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 77960 Stücke - Preis und Lieferfrist anzeigen
BZX585-B2V4,115 BZX585_SERIES.pdf
BZX585-B2V4,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.4V 300MW SOD523
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16QAZ BAS16QA.pdf
BAS16QAZ
Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 290MA DFN1010D-3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1010D-3
Current - Average Rectified (Io): 290mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN063-150D,118 PSMN063-150D.pdf
PSMN063-150D,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 29A DPAK
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX79-C6V8,113 BZX79.pdf
BZX79-C6V8,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 400MW ALF2
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
auf Bestellung 7026 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4490 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C6V8,133 BZX79.pdf
BZX79-C6V8,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 400MW ALF2
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 648 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
BZX79-B5V6,113 BZX79.pdf
BZX79-B5V6,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 400MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 10151 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 291170 Stücke - Preis und Lieferfrist anzeigen
46+ 0.57 EUR
50+ 0.52 EUR
100+ 0.28 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.091 EUR
BZX84-B47,215 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-B47,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 47V 250MW TO236AB
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
auf Bestellung 1420 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8110 Stücke - Preis und Lieferfrist anzeigen
50+ 0.52 EUR
56+ 0.47 EUR
102+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
BZV85-C12,133 NEXP-S-A0002883904-1.pdf?t.download=true&u=5oefqw
BZV85-C12,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 1W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 200°C
auf Bestellung 3442 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10070 Stücke - Preis und Lieferfrist anzeigen
28+ 0.96 EUR
33+ 0.79 EUR
100+ 0.42 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
BZT52H-B27,115 NEXP-S-A0002882686-1.pdf?t.download=true&u=5oefqw
BZT52H-B27,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 375MW SOD123F
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 375 mW
Part Status: Active
Supplier Device Package: SOD-123F
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 89199 Stücke - Preis und Lieferfrist anzeigen
BZT52H-B6V8,115 NEXP-S-A0002882686-1.pdf?t.download=true&u=5oefqw
BZT52H-B6V8,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 375MW SOD123F
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 375 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2790 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4660 Stücke - Preis und Lieferfrist anzeigen
46+ 0.57 EUR
56+ 0.47 EUR
105+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
PDZ11B,115 PHGLS19616-1.pdf?t.download=true&u=5oefqw
PDZ11B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 400MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 2460 Stücke
Lieferzeit 21-28 Tag (e)
48+ 0.55 EUR
53+ 0.49 EUR
100+ 0.27 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
BZV55-B30,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-B30,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 500MW LLDS
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2380 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 246522 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
53+ 0.5 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
TDZ2V7J,115 TDZXJ_SER.pdf
TDZ2V7J,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 500MW SOD323F
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5098 Stücke - Preis und Lieferfrist anzeigen
PMEG3010ESBZ PMEG3010ESB.pdf
PMEG3010ESBZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG3010ESBYL PMEG3010ESB.pdf
PMEG3010ESBYL
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX84J-B6V8,115 BZX84J_SER.pdf
BZX84J-B6V8,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 550MW SOD323F
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 1385 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.04 EUR
34+ 0.78 EUR
100+ 0.44 EUR
500+ 0.29 EUR
1000+ 0.23 EUR
BZX84J-B2V7,115 BZX84J_SER.pdf
BZX84J-B2V7,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 550MW SOD323F
Power - Max: 550 mW
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19727 Stücke - Preis und Lieferfrist anzeigen
BZX84-B15/DG/B4R PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-B15/DG/B4R
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 250MW TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MM3Z10VT1GX MM3Z_SER.pdf
MM3Z10VT1GX
Hersteller: Nexperia USA Inc.
Description: VOLTAGE REGULATOR DIODES
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Supplier Device Package: SOD-323
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 10 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
PMEG3010AESBZ PMEG3010AESB.pdf
PMEG3010AESBZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMZ390UN,315 PMZ390UN.pdf
PMZ390UN,315
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.78A DFN1006-3
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 195400 Stücke - Preis und Lieferfrist anzeigen
PMEG45U10EPDAZ PMEG45U10EPD.pdf
PMEG45U10EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Current - Reverse Leakage @ Vr: 20 mA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1924000 Stücke - Preis und Lieferfrist anzeigen
PMEG100V100ELPDAZ PMEG100V100ELPD.pdf
PMEG100V100ELPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 10A CFP15
Operating Temperature - Junction: 175°C (Max)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Reverse Recovery Time (trr): 14 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4710 Stücke - Preis und Lieferfrist anzeigen
PMEG100V080ELPDAZ PMEG100V080ELPD.pdf
PMEG100V080ELPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Tape & Reel (TR)
Base Part Number: PMEG100
Manufacturer: Nexperia USA Inc.
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Reverse Recovery Time (trr): 10ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 850mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4430 Stücke - Preis und Lieferfrist anzeigen
PMEG45A10EPDZ PMEG45A10EPD.pdf
PMEG45A10EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 240pF @ 10V, 1MHz
Reverse Recovery Time (trr): 13 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
PMZB1200UPEYL PMZB1200UPE.pdf
PMZB1200UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 410MA DFN1006B-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 650547 Stücke - Preis und Lieferfrist anzeigen
PMZB550UNEYL PMZB550UNE.pdf
PMZB550UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18030 Stücke - Preis und Lieferfrist anzeigen
PMZ390UNEYL PMZ390UNE.pdf
PMZ390UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMZB390UNEYL PMZB390UNE.pdf
PMZB390UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39740 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.19 EUR
PMZ200UNEYL PMZ200UNE.pdf
PMZ200UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.4A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMZB200UNEYL PMZB200UNE.pdf
PMZB200UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39900 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.21 EUR
PMZ600UNEYL PMZ600UNE.pdf
PMZ600UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 600MA DFN1006-3
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9944 Stücke - Preis und Lieferfrist anzeigen
PMZ370UNEYL PMZ370UNE.pdf
PMZ370UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN1006-3
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-883
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35257 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.15 EUR
PMZ370UNEYL PMZ370UNE.pdf
PMZ370UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN1006-3
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 1.05V @ 250µA
auf Bestellung 20558 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34699 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
35+ 0.75 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
2000+ 0.19 EUR
5000+ 0.17 EUR
PMZ950UPEYL PMZ950UPE.pdf
PMZ950UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 383660 Stücke - Preis und Lieferfrist anzeigen
PMZ320UPEYL PMZ320UPE.pdf
PMZ320UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39200 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.17 EUR
PMZ320UPEYL PMZ320UPE.pdf
PMZ320UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 39200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
31+ 0.84 EUR
100+ 0.48 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
2000+ 0.21 EUR
5000+ 0.19 EUR
PMZB320UPEYL PMZB320UPE.pdf
PMZB320UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 90000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 112170 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.19 EUR
PMZB320UPEYL PMZB320UPE.pdf
PMZB320UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
auf Bestellung 106375 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95795 Stücke - Preis und Lieferfrist anzeigen
21+ 1.27 EUR
28+ 0.94 EUR
100+ 0.53 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.23 EUR
5000+ 0.21 EUR
PMZB950UPEYL PMZB950UPE.pdf
PMZB950UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006B-3
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 216 Stücke - Preis und Lieferfrist anzeigen
PMZB950UPEYL PMZB950UPE.pdf
PMZB950UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006B-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 216 Stücke
Lieferzeit 21-28 Tag (e)
23+ 1.14 EUR
31+ 0.87 EUR
100+ 0.54 EUR
PMV65XPER PMV65XPE.pdf
PMV65XPER
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1274 Stücke - Preis und Lieferfrist anzeigen
PMXB75UPEZ PMXB75UPE.pdf
PMXB75UPEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.9A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 85 Stücke - Preis und Lieferfrist anzeigen
PMV75UP,215 PMV75UP.pdf
PMV75UP,215
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.5A TO236AB
Power Dissipation (Max): 490mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMV50XPR PMV50XP.pdf
PMV50XPR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.6A TO236AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 490mW (Ta), 4.63W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMCM650VNEZ PMCM650VNE.pdf
PMCM650VNEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4WLCSP
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.48x.98)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG100V100ELPDZ PMEG100V100ELPD.pdf
PMEG100V100ELPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 10A CFP15
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Reverse Recovery Time (trr): 14 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG4010ESBYL PMEG4010ESB.pdf
PMEG4010ESBYL
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN1006-2
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Reverse Recovery Time (trr): 2.9 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15238 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.13 EUR
PMEG45T15EPDZ PMEG45T15EPD.pdf
PMEG45T15EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 15A CFP15
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3280 Stücke - Preis und Lieferfrist anzeigen
BUK7880-55A/CUX BUK7880-55A.pdf
BUK7880-55A/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7A SOT223
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9840-55/CUX BUK9840-55.pdf
BUK9840-55/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5A/10.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK964R2-80E,118 BUK964R2-80E.pdf
BUK964R2-80E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
4+ 8.48 EUR
10+ 7.6 EUR
100+ 6.23 EUR
BZX79-C12,113 BZX79.pdf
BZX79-C12,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 47201 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 406670 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C13,133 BZX79.pdf
BZX79-C13,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 400MW ALF2
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 8271 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 170000 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C7V5,113 BZX79.pdf
BZX79-C7V5,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 400MW ALF2
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
auf Bestellung 16699 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 459490 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C75,113 BZX79.pdf
BZX79-C75,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 75V 400MW ALF2
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 255 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 200°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7260 Stücke - Preis und Lieferfrist anzeigen
BZX79-C9V1,113 BZX79.pdf
BZX79-C9V1,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 400MW ALF2
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 1590 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 438340 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
BZX79-C6V2,113 BZX79.pdf
BZX79-C6V2,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 400MW ALF2
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 14476 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 416120 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C2V4,113 BZX79.pdf
BZX79-C2V4,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.4V 400MW ALF2
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Zener (Nom) (Vz): 2.4 V
Power - Max: 400 mW
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 22000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 344570 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
70+ 0.37 EUR
128+ 0.2 EUR
500+ 0.13 EUR
1000+ 0.086 EUR
2000+ 0.073 EUR
5000+ 0.066 EUR
BZX79-C11,133 BZX79.pdf
BZX79-C11,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 400MW ALF2
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
auf Bestellung 8607 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 189675 Stücke - Preis und Lieferfrist anzeigen
72+ 0.36 EUR
79+ 0.33 EUR
146+ 0.18 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
2000+ 0.064 EUR
5000+ 0.057 EUR
BZX79-C3V9,113 BZX79.pdf
BZX79-C3V9,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.9V 400MW ALF2
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 9999 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 239730 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
132+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.071 EUR
5000+ 0.064 EUR
BZX79-C3V9,133 BZX79.pdf
BZX79-C3V9,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.9V 400MW ALF2
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 4598 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 180 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
70+ 0.37 EUR
129+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.085 EUR
2000+ 0.072 EUR
PMEG045V050EPDAZ PMEG045V050EPD.pdf
PMEG045V050EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 5A CFP15
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 966908 Stücke - Preis und Lieferfrist anzeigen
PMEG060V050EPDAZ PMEG060V050EPD.pdf
PMEG060V050EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 5A CFP15
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 175pF @ 10V, 1MHz
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5155 Stücke - Preis und Lieferfrist anzeigen
PMEG045V150EPDZ PMEG045V150EPD.pdf
PMEG045V150EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 15A CFP15
Capacitance @ Vr, F: 610pF @ 10V, 1MHz
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 900 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6077 Stücke - Preis und Lieferfrist anzeigen
PMEG050T150EPDAZ PMEG050T150EPD.pdf
PMEG050T150EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8830 Stücke - Preis und Lieferfrist anzeigen
PMEG050V150EPDAZ PMEG050V150EPD.pdf
PMEG050V150EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: 570pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8244 Stücke - Preis und Lieferfrist anzeigen
PMEG4010ESBZ PMEG4010ESB.pdf
PMEG4010ESBZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9ns
Current - Reverse Leakage @ Vr: 40µA @ 40V
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMEG45T15EPDAZ PMEG45T15EPD.pdf
PMEG45T15EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 15A CFP15
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3402 Stücke - Preis und Lieferfrist anzeigen
1500+ 1.03 EUR
3000+ 0.97 EUR
BUK9880-55,135 BUK9880-55.pdf
BUK9880-55,135
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7.5A SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
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