Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (30309) > Seite 132 nach 506
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74HCT166D,653 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 16-SO Part Status: Active Number of Bits per Element: 8 |
auf Bestellung 162 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R4-30MLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R4-30YLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R2-30MLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN7R5-30MLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R0-30YLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V |
auf Bestellung 31500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R4-30MLDX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 15 V |
auf Bestellung 10165 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R4-30YLDX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V |
auf Bestellung 2643 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R2-30MLDX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V |
auf Bestellung 3749 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R0-30YLDX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V |
auf Bestellung 33078 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN6R1-30YLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y14-80EX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y153-100EX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V Power Dissipation (Max): 37.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1999 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y3R5-40E,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3583 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 24252 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K25-40EX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18.2A Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 7943 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K6R8-40EX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 5787 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y14-80E,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7928 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y72-80E,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 898 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN038-100YLX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V Power Dissipation (Max): 94.9W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V |
auf Bestellung 2016 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN6R1-30YLDX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V |
auf Bestellung 2348 Stücke: Lieferzeit 10-14 Tag (e) |
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74AVC1T45GN,132 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 500Mbps Supplier Device Package: 6-XSON (0.9x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.8 V ~ 3.6 V Voltage - VCCB: 0.8 V ~ 3.6 V Part Status: Active Number of Circuits: 1 |
auf Bestellung 8167 Stücke: Lieferzeit 10-14 Tag (e) |
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74AVC1T45GS,132 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 500Mbps Supplier Device Package: 6-XSON, SOT1202 (1x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.8 V ~ 3.6 V Voltage - VCCB: 0.8 V ~ 3.6 V Number of Circuits: 1 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NPIC6C596ABQ-Q100X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 5.5V Supplier Device Package: 16-DHVQFN (2.5x3.5) Grade: Automotive Part Status: Last Time Buy Number of Bits per Element: 8 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NPIC6C596ABQ-Q100X | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 5.5V Supplier Device Package: 16-DHVQFN (2.5x3.5) Grade: Automotive Part Status: Last Time Buy Number of Bits per Element: 8 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PCMF2DFN1XL | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Features: TVS Diode ESD Protection Package / Case: 9-XFDFN Filter Type: Signal Line Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Number of Lines: 4 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) DC Resistance (DCR) (Max): 5Ohm (Typ) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PCMF3DFN1X | Nexperia USA Inc. |
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Produkt ist nicht verfügbar |
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PCMF2DFN1XL | Nexperia USA Inc. |
![]() Features: TVS Diode ESD Protection Packaging: Cut Tape (CT) Package / Case: 9-XFDFN Filter Type: Signal Line Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Number of Lines: 4 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) DC Resistance (DCR) (Max): 5Ohm (Typ) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74AVC16T245DGV-Q1J | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Translation Transceiver Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 12mA, 12mA Supplier Device Package: 48-TSSOP Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74AVC4TD245GU,115 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-XFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 380Mbps Supplier Device Package: 16-XQFN (1.8x2.6) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.8 V ~ 3.6 V Voltage - VCCB: 0.8 V ~ 3.6 V Part Status: Active Number of Circuits: 1 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC4040BQ-Q100X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-DHVQFN (2.5x3.5) Part Status: Active Voltage - Supply: 2 V ~ 6 V Count Rate: 98 MHz Number of Bits per Element: 12 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74HCT4040BQ-Q100X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-DHVQFN (2.5x3.5) Part Status: Active Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 79 MHz Number of Bits per Element: 12 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BAS316Z | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC807-40QAZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Frequency - Transition: 80MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 900 mW Qualification: AEC-Q101 |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC817-25QAZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 900 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC817-40QAZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 900 mW Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K5R1-30EX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BUK9K5R6-30EX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCR401UX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Voltage - Output: 38V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TA) Current - Output / Channel: 10mA Internal Switch(s): Yes Supplier Device Package: 6-TSOP Voltage - Supply (Max): 40V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NPIC6C596ABQX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 5.5V Supplier Device Package: 16-DHVQFN (2.5x3.5) Part Status: Last Time Buy Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NPIC6C596ADJ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 5.5V Supplier Device Package: 16-SO Part Status: Obsolete Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NPIC6C596APWJ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 5.5V Supplier Device Package: 16-TSSOP Part Status: Last Time Buy Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PBHV8115X,115 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 30MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PBHV8540X,115 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 30MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 520 mW Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PBHV9040X,115 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V Frequency - Transition: 55MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 250 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS4260QAZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PBSS5160QAZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V Frequency - Transition: 150MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PBSS5260QAZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V Frequency - Transition: 150MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 1.7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PDTA123JTVL | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PDTC144ETVL | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PESD24VF1BLYL | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.5V Voltage - Clamping (Max) @ Ipp: 17V Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDXB950UPEZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG2002AESF,315 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.9 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA Current - Reverse Leakage @ Vr: 45 µA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PMEG45A10EPDAZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Schottky Capacitance @ Vr, F: 715pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: CFP15 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PMEG45U10EPDZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Schottky Capacitance @ Vr, F: 1170pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: CFP15 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 45 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB85ENEAX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB95ENEAX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMXB56ENZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PSMN0R9-30YLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V Power Dissipation (Max): 291W Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R0-30YLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R2-30YLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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74HCT166D,653 |
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Hersteller: Nexperia USA Inc.
Description: IC SHIFT REG 8BIT PI-SO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Active
Number of Bits per Element: 8
Description: IC SHIFT REG 8BIT PI-SO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 162 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.9 EUR |
28+ | 0.64 EUR |
31+ | 0.57 EUR |
100+ | 0.5 EUR |
PSMN2R4-30MLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 15 V
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.63 EUR |
PSMN2R4-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.78 EUR |
PSMN4R2-30MLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.49 EUR |
PSMN7R5-30MLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 57A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Description: MOSFET N-CH 30V 57A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.5 EUR |
PSMN3R0-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
auf Bestellung 31500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.59 EUR |
3000+ | 0.58 EUR |
PSMN2R4-30MLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 15 V
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 15 V
auf Bestellung 10165 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.48 EUR |
16+ | 1.13 EUR |
100+ | 0.81 EUR |
500+ | 0.77 EUR |
PSMN2R4-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V
auf Bestellung 2643 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.71 EUR |
11+ | 1.71 EUR |
100+ | 1.14 EUR |
500+ | 0.9 EUR |
PSMN4R2-30MLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V
auf Bestellung 3749 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.44 EUR |
15+ | 1.25 EUR |
100+ | 0.86 EUR |
500+ | 0.72 EUR |
PSMN3R0-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
auf Bestellung 33078 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.55 EUR |
17+ | 1.08 EUR |
100+ | 0.74 EUR |
PSMN6R1-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
Description: MOSFET N-CH 30V 66A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.49 EUR |
BUK7Y14-80EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 65A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 65A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.74 EUR |
13+ | 1.42 EUR |
100+ | 1.11 EUR |
BUK7Y153-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V
Power Dissipation (Max): 37.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V
Power Dissipation (Max): 37.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.92 EUR |
27+ | 0.67 EUR |
100+ | 0.5 EUR |
500+ | 0.42 EUR |
BUK7Y3R5-40E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3583 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3583 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24252 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.53 EUR |
16+ | 1.17 EUR |
100+ | 0.93 EUR |
500+ | 0.92 EUR |
BUK9K25-40EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 18.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 40V 18.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7943 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.39 EUR |
100+ | 0.91 EUR |
500+ | 0.76 EUR |
BUK9K6R8-40EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5787 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.31 EUR |
10+ | 2.77 EUR |
100+ | 1.9 EUR |
500+ | 1.52 EUR |
BUK9Y14-80E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7928 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.01 EUR |
10+ | 1.92 EUR |
100+ | 1.29 EUR |
500+ | 1.02 EUR |
BUK9Y72-80E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 15A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 898 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 15A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 898 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.76 EUR |
16+ | 1.1 EUR |
100+ | 0.72 EUR |
PSMN038-100YLX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
auf Bestellung 2016 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.2 EUR |
13+ | 1.38 EUR |
100+ | 0.91 EUR |
500+ | 0.71 EUR |
PSMN6R1-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
Description: MOSFET N-CH 30V 66A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
auf Bestellung 2348 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.14 EUR |
18+ | 0.99 EUR |
100+ | 0.69 EUR |
500+ | 0.57 EUR |
74AVC1T45GN,132 |
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Hersteller: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON (0.9x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON (0.9x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 8167 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 0.83 EUR |
31+ | 0.58 EUR |
35+ | 0.52 EUR |
100+ | 0.45 EUR |
250+ | 0.42 EUR |
500+ | 0.4 EUR |
1000+ | 0.38 EUR |
2500+ | 0.36 EUR |
74AVC1T45GS,132 |
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Hersteller: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 0.86 EUR |
25+ | 0.73 EUR |
26+ | 0.68 EUR |
100+ | 0.55 EUR |
250+ | 0.51 EUR |
500+ | 0.43 EUR |
1000+ | 0.33 EUR |
2500+ | 0.3 EUR |
NPIC6C596ABQ-Q100X |
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Hersteller: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Last Time Buy
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: IC SHIFT REGISTER 8BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Last Time Buy
Number of Bits per Element: 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NPIC6C596ABQ-Q100X |
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Hersteller: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Last Time Buy
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: IC SHIFT REGISTER 8BIT 16DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Last Time Buy
Number of Bits per Element: 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCMF2DFN1XL |
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Hersteller: Nexperia USA Inc.
Description: CMC 4LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 9-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Obsolete
Description: CMC 4LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 9-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCMF3DFN1X |
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Hersteller: Nexperia USA Inc.
Description: COMMON MODE CHOKE 6LN SMD ESD
Description: COMMON MODE CHOKE 6LN SMD ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCMF2DFN1XL |
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Hersteller: Nexperia USA Inc.
Description: CMC 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 9-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Obsolete
Description: CMC 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 9-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AVC16T245DGV-Q1J |
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Hersteller: Nexperia USA Inc.
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 48-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 48-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AVC4TD245GU,115 |
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Hersteller: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 16XQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 380Mbps
Supplier Device Package: 16-XQFN (1.8x2.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 16XQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 380Mbps
Supplier Device Package: 16-XQFN (1.8x2.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.63 EUR |
8000+ | 0.61 EUR |
74HC4040BQ-Q100X |
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Hersteller: Nexperia USA Inc.
Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 98 MHz
Number of Bits per Element: 12
Grade: Automotive
Qualification: AEC-Q100
Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 98 MHz
Number of Bits per Element: 12
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74HCT4040BQ-Q100X |
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Hersteller: Nexperia USA Inc.
Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 79 MHz
Number of Bits per Element: 12
Grade: Automotive
Qualification: AEC-Q100
Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 79 MHz
Number of Bits per Element: 12
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS316Z |
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Hersteller: Nexperia USA Inc.
Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.019 EUR |
BC807-40QAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.073 EUR |
10000+ | 0.066 EUR |
15000+ | 0.062 EUR |
25000+ | 0.058 EUR |
BC817-25QAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC817-40QAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.066 EUR |
BUK9K5R1-30EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK9K5R6-30EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
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NCR401UX |
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Hersteller: Nexperia USA Inc.
Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.13 EUR |
NPIC6C596ABQX |
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Hersteller: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Last Time Buy
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Last Time Buy
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NPIC6C596ADJ |
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Hersteller: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NPIC6C596APWJ |
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Hersteller: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PBHV8115X,115 |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 150V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 150V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.31 EUR |
2000+ | 0.28 EUR |
3000+ | 0.27 EUR |
5000+ | 0.25 EUR |
PBHV8540X,115 |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PBHV9040X,115 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 400V 0.25A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 400V 0.25A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.34 EUR |
PBSS4260QAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 60V 2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 60V 2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PBSS5160QAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 60V 1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PBSS5260QAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PDTA123JTVL |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PDTC144ETVL |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PESD24VF1BLYL |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.096 EUR |
PMDXB950UPEZ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.16 EUR |
PMEG2002AESF,315 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG45A10EPDAZ |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG45U10EPDZ |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.46 EUR |
3000+ | 0.45 EUR |
PMPB85ENEAX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.17 EUR |
9000+ | 0.16 EUR |
PMPB95ENEAX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.24 EUR |
PMXB56ENZ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMN0R9-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 1.61 EUR |
PSMN1R0-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 1.28 EUR |
PSMN1R2-30YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 1.01 EUR |