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74LVCH16245AEVY 74LVCH16245AEVY Nexperia USA Inc. 74LVC_LVCH16245A.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAW156VL BAW156VL Nexperia USA Inc. BAW156.pdf Description: DIODE ARRAY GP 75V 160MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 160mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q100
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HEF4541BT-Q100Y HEF4541BT-Q100Y Nexperia USA Inc. HEF4541B_Q100.pdf Description: IC OSC PROG TIMER 36MHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36MHz
Type: Programmable Timer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Last Time Buy
Current - Supply: 500 µA
Qualification: AEC-Q100
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74AVCH4T245BQ-Q10X 74AVCH4T245BQ-Q10X Nexperia USA Inc. 74AVCH4T245_Q100.pdf Description: IC TRANSLATON TXRX 3.6V 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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6000+0.86 EUR
9000+0.85 EUR
15000+0.83 EUR
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74HC4017BQ-Q100X 74HC4017BQ-Q100X Nexperia USA Inc. 74HC_HCT4017_Q100.pdf Description: IC DECADE COUNTER 10BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive, Negative
Timing: Synchronous
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 83 MHz
Number of Bits per Element: 10
Qualification: AEC-Q100
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74HCT2G86DC-Q100H 74HCT2G86DC-Q100H Nexperia USA Inc. 74HC_HCT2G86_Q100.pdf Description: IC GATE XOR 2CH 2-INP 8VSSOP
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BUK7K12-60EX BUK7K12-60EX Nexperia USA Inc. BUK7K12-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK7K13-60EX BUK7K13-60EX Nexperia USA Inc. BUK7K13-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK7K17-60EX BUK7K17-60EX Nexperia USA Inc. BUK7K17-60E.pdf Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK7K18-40EX BUK7K18-40EX Nexperia USA Inc. BUK7K18-40E.pdf Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK7K32-100EX BUK7K32-100EX Nexperia USA Inc. BUK7K32-100E.pdf Description: MOSFET 2N-CH 100V 29A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29A
Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK7K35-60EX BUK7K35-60EX Nexperia USA Inc. BUK7K35-60E.pdf Description: MOSFET 2N-CH 60V 20.7A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20.7A
Input Capacitance (Ciss) (Max) @ Vds: 794pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK7K45-100EX BUK7K45-100EX Nexperia USA Inc. BUK7K45-100E.pdf Description: MOSFET 2N-CH 100V 21.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK7K52-60EX BUK7K52-60EX Nexperia USA Inc. BUK7K52-60E.pdf Description: MOSFET 2N-CH 60V 15.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.4A
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK7K89-100EX BUK7K89-100EX Nexperia USA Inc. BUK7K89-100E.pdf Description: MOSFET 2N-CH 100V 13A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK9K12-60EX BUK9K12-60EX Nexperia USA Inc. BUK9K12-60E.pdf Description: MOSFET 2N-CH 60V 35A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK9K134-100EX BUK9K134-100EX Nexperia USA Inc. BUK9K134-100E.pdf Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK9K13-60EX BUK9K13-60EX Nexperia USA Inc. BUK9K13-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK9K25-40EX BUK9K25-40EX Nexperia USA Inc. BUK9K25-40E.pdf Description: MOSFET 2N-CH 40V 18.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1500+0.58 EUR
3000+0.57 EUR
4500+0.56 EUR
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BUK9K32-100EX BUK9K32-100EX Nexperia USA Inc. BUK9K32-100E.pdf Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK9K6R8-40EX BUK9K6R8-40EX Nexperia USA Inc. BUK9K6R8-40E.pdf Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK9K8R7-40EX BUK9K8R7-40EX Nexperia USA Inc. BUK9K8R7-40E.pdf Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LVC16244AEVE 74LVC16244AEVE Nexperia USA Inc. 74LVC_LVCH16244A.pdf Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Produkt ist nicht verfügbar
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74LVC16244AEVK 74LVC16244AEVK Nexperia USA Inc. 74LVC_LVCH16244A.pdf Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
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74LVCH16245AEV,551 74LVCH16245AEV,551 Nexperia USA Inc. 74LVC_LVCH16245A.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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74LVCH16245AEVK 74LVCH16245AEVK Nexperia USA Inc. 74LVC(H)16245A_Rev12.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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74LVT16245BEVE 74LVT16245BEVE Nexperia USA Inc. 74LVT_LVTH16245B.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
Produkt ist nicht verfügbar
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74LVT16245BEVK 74LVT16245BEVK Nexperia USA Inc. 74LVT_LVTH16245B.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
Produkt ist nicht verfügbar
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PESD18VF1BLYL PESD18VF1BLYL Nexperia USA Inc. PESD18VF1BL.pdf Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PESD18VF1BLYL PESD18VF1BLYL Nexperia USA Inc. PESD18VF1BL.pdf Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
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BUK7K17-60EX BUK7K17-60EX Nexperia USA Inc. BUK7K17-60E.pdf Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK7Y4R8-60EX BUK7Y4R8-60EX Nexperia USA Inc. BUK7Y4R8-60E.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 25 V
Qualification: AEC-Q101
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BUK7Y7R8-80EX BUK7Y7R8-80EX Nexperia USA Inc. BUK7Y7R8-80E.pdf Description: MOSFET N-CH 80V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5347 pF @ 25 V
Qualification: AEC-Q101
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BUK7Y9R9-80EX BUK7Y9R9-80EX Nexperia USA Inc. BUK7Y9R9-80E.pdf Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4266 pF @ 25 V
Qualification: AEC-Q101
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BUK9K32-100EX BUK9K32-100EX Nexperia USA Inc. BUK9K32-100E.pdf Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK9K8R7-40EX BUK9K8R7-40EX Nexperia USA Inc. BUK9K8R7-40E.pdf Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK9Y153-100E,115 BUK9Y153-100E,115 Nexperia USA Inc. BUK9Y153-100E.pdf Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
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BUK9Y15-60E,115 BUK9Y15-60E,115 Nexperia USA Inc. BUK9Y15-60E.pdf Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
Qualification: AEC-Q101
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BUK9Y22-100E,115 BUK9Y22-100E,115 Nexperia USA Inc. BUK9Y22-100E.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
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BUK9Y25-60E,115 BUK9Y25-60E,115 Nexperia USA Inc. BUK9Y25-60E.pdf Description: MOSFET N-CH 60V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
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BUK9Y29-40E,115 BUK9Y29-40E,115 Nexperia USA Inc. BUK9Y29-40E.pdf Description: MOSFET N-CH 40V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y38-100E,115 BUK9Y38-100E,115 Nexperia USA Inc. BUK9Y38-100E.pdf Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V
Qualification: AEC-Q101
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BUK9Y3R0-40E,115 BUK9Y3R0-40E,115 Nexperia USA Inc. BUK9Y3R0-40E.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V
Qualification: AEC-Q101
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BUK9Y43-60E,115 BUK9Y43-60E,115 Nexperia USA Inc. BUK9Y43-60E.pdf Description: MOSFET N-CH 60V 22A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
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BUK9Y4R4-40E,115 BUK9Y4R4-40E,115 Nexperia USA Inc. BUK9Y4R4-40E.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y4R8-60E,115 BUK9Y4R8-60E,115 Nexperia USA Inc. BUK9Y4R8-60E.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
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BUK9Y6R0-60E,115 BUK9Y6R0-60E,115 Nexperia USA Inc. BUK9Y6R0-60E.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6319 pF @ 25 V
Qualification: AEC-Q101
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PSMN011-60MLX PSMN011-60MLX Nexperia USA Inc. PSMN011-60ML.pdf Description: MOSFET N-CH 60V 61A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2191 pF @ 30 V
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PSMN041-80YLX PSMN041-80YLX Nexperia USA Inc. PSMN041-80YL.pdf Description: MOSFET N-CH 80V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
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PMT21EN,115 PMT21EN,115 Nexperia USA Inc. PMT21EN.pdf Description: MOSFET N-CH 30V 7.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 15 V
Produkt ist nicht verfügbar
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1PS70SB10,115 1PS70SB10,115 Nexperia USA Inc. 1PS70SB10.pdf Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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1PS79SB31,115 1PS79SB31,115 Nexperia USA Inc. 1PS79SB31.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
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2PB709ART,215 2PB709ART,215 Nexperia USA Inc. 2PB709ART.pdf Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
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2PD601ART,215 2PD601ART,215 Nexperia USA Inc. 2PD601ART.pdf Description: TRANS NPN 50V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
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2PD601BRL,215 2PD601BRL,215 Nexperia USA Inc. 2PD601BRL_2PD601BSL.pdf Description: TRANS NPN 50V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
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74HCT1G86GW,125 74HCT1G86GW,125 Nexperia USA Inc. 74HC_HCT1G86.pdf Description: IC GATE XOR 1CH 2-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 13ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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74HCT574PW,118 74HCT574PW,118 Nexperia USA Inc. 74HC_HCT574.pdf Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 6mA, 6mA
Trigger Type: Positive Edge
Clock Frequency: 76 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 8
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BAS21AW,115 BAS21AW,115 Nexperia USA Inc. BAS21AW.pdf Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 1668 Stücke:
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BAS40-05V,115 BAS40-05V,115 Nexperia USA Inc. BAS40-05V.pdf Description: DIODE ARR SCHOT 40V 120MA SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-666
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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BAS45A,113 BAS45A,113 Nexperia USA Inc. BAS45A.pdf Description: DIODE STANDARD 125V 250MA DO34
Packaging: Cut Tape (CT)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-34
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
auf Bestellung 6424 Stücke:
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74LVCH16245AEVY 74LVC_LVCH16245A.pdf
74LVCH16245AEVY
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAW156VL BAW156.pdf
BAW156VL
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 75V 160MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 160mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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HEF4541BT-Q100Y HEF4541B_Q100.pdf
HEF4541BT-Q100Y
Hersteller: Nexperia USA Inc.
Description: IC OSC PROG TIMER 36MHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36MHz
Type: Programmable Timer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Last Time Buy
Current - Supply: 500 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74AVCH4T245BQ-Q10X 74AVCH4T245_Q100.pdf
74AVCH4T245BQ-Q10X
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATON TXRX 3.6V 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
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Anzahl Preis
3000+0.87 EUR
6000+0.86 EUR
9000+0.85 EUR
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74HC4017BQ-Q100X 74HC_HCT4017_Q100.pdf
74HC4017BQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC DECADE COUNTER 10BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive, Negative
Timing: Synchronous
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 83 MHz
Number of Bits per Element: 10
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74HCT2G86DC-Q100H 74HC_HCT2G86_Q100.pdf
74HCT2G86DC-Q100H
Hersteller: Nexperia USA Inc.
Description: IC GATE XOR 2CH 2-INP 8VSSOP
Produkt ist nicht verfügbar
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BUK7K12-60EX BUK7K12-60E.pdf
BUK7K12-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK7K13-60EX BUK7K13-60E.pdf
BUK7K13-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK7K17-60EX BUK7K17-60E.pdf
BUK7K17-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 105000 Stücke:
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Anzahl Preis
1500+1.15 EUR
3000+1.07 EUR
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BUK7K18-40EX BUK7K18-40E.pdf
BUK7K18-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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Anzahl Preis
1500+0.72 EUR
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BUK7K32-100EX BUK7K32-100E.pdf
BUK7K32-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 29A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29A
Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
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Anzahl Preis
1500+1.29 EUR
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BUK7K35-60EX BUK7K35-60E.pdf
BUK7K35-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 20.7A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20.7A
Input Capacitance (Ciss) (Max) @ Vds: 794pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK7K45-100EX BUK7K45-100E.pdf
BUK7K45-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK7K52-60EX BUK7K52-60E.pdf
BUK7K52-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 15.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.4A
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK7K89-100EX BUK7K89-100E.pdf
BUK7K89-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 13A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.78 EUR
Mindestbestellmenge: 1500
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BUK9K12-60EX BUK9K12-60E.pdf
BUK9K12-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 35A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.14 EUR
Mindestbestellmenge: 1500
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BUK9K134-100EX BUK9K134-100E.pdf
BUK9K134-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.66 EUR
3000+0.62 EUR
Mindestbestellmenge: 1500
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BUK9K13-60EX BUK9K13-60E.pdf
BUK9K13-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK9K25-40EX BUK9K25-40E.pdf
BUK9K25-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 18.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.58 EUR
3000+0.57 EUR
4500+0.56 EUR
Mindestbestellmenge: 1500
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BUK9K32-100EX BUK9K32-100E.pdf
BUK9K32-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK9K6R8-40EX BUK9K6R8-40E.pdf
BUK9K6R8-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.24 EUR
Mindestbestellmenge: 1500
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BUK9K8R7-40EX BUK9K8R7-40E.pdf
BUK9K8R7-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LVC16244AEVE 74LVC_LVCH16244A.pdf
74LVC16244AEVE
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Produkt ist nicht verfügbar
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74LVC16244AEVK 74LVC_LVCH16244A.pdf
74LVC16244AEVK
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Produkt ist nicht verfügbar
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74LVCH16245AEV,551 74LVC_LVCH16245A.pdf
74LVCH16245AEV,551
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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74LVCH16245AEVK 74LVC(H)16245A_Rev12.pdf
74LVCH16245AEVK
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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74LVT16245BEVE 74LVT_LVTH16245B.pdf
74LVT16245BEVE
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
Produkt ist nicht verfügbar
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74LVT16245BEVK 74LVT_LVTH16245B.pdf
74LVT16245BEVK
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
Produkt ist nicht verfügbar
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PESD18VF1BLYL PESD18VF1BL.pdf
PESD18VF1BLYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PESD18VF1BLYL PESD18VF1BL.pdf
PESD18VF1BLYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
auf Bestellung 1861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
47+0.37 EUR
66+0.27 EUR
100+0.23 EUR
Mindestbestellmenge: 30
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BUK7K17-60EX BUK7K17-60E.pdf
BUK7K17-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 106171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.45 EUR
50+1.85 EUR
100+1.66 EUR
Mindestbestellmenge: 5
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BUK7Y4R8-60EX BUK7Y4R8-60E.pdf
BUK7Y4R8-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
10+2.88 EUR
50+2.19 EUR
100+1.97 EUR
Mindestbestellmenge: 4
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BUK7Y7R8-80EX BUK7Y7R8-80E.pdf
BUK7Y7R8-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5347 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 19309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.43 EUR
100+1.74 EUR
500+1.43 EUR
Mindestbestellmenge: 5
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BUK7Y9R9-80EX BUK7Y9R9-80E.pdf
BUK7Y9R9-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4266 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.24 EUR
10+2.72 EUR
50+2.06 EUR
100+1.85 EUR
Mindestbestellmenge: 5
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BUK9K32-100EX BUK9K32-100E.pdf
BUK9K32-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.85 EUR
50+2.17 EUR
100+1.94 EUR
Mindestbestellmenge: 4
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BUK9K8R7-40EX BUK9K8R7-40E.pdf
BUK9K8R7-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
Mindestbestellmenge: 6
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BUK9Y153-100E,115 BUK9Y153-100E.pdf
BUK9Y153-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
50+0.87 EUR
100+0.77 EUR
Mindestbestellmenge: 10
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BUK9Y15-60E,115 BUK9Y15-60E.pdf
BUK9Y15-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
15+1.2 EUR
100+0.82 EUR
500+0.75 EUR
Mindestbestellmenge: 12
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BUK9Y22-100E,115 BUK9Y22-100E.pdf
BUK9Y22-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+1.99 EUR
100+1.34 EUR
500+1.06 EUR
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BUK9Y25-60E,115 BUK9Y25-60E.pdf
BUK9Y25-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 46500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
14+1.26 EUR
100+0.93 EUR
500+0.73 EUR
Mindestbestellmenge: 11
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BUK9Y29-40E,115 BUK9Y29-40E.pdf
BUK9Y29-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y38-100E,115 BUK9Y38-100E.pdf
BUK9Y38-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
13+1.39 EUR
50+1.03 EUR
100+0.91 EUR
Mindestbestellmenge: 8
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BUK9Y3R0-40E,115 BUK9Y3R0-40E.pdf
BUK9Y3R0-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
10+2.09 EUR
100+1.52 EUR
500+1.29 EUR
Mindestbestellmenge: 8
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BUK9Y43-60E,115 BUK9Y43-60E.pdf
BUK9Y43-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 22A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1 EUR
50+0.73 EUR
100+0.65 EUR
Mindestbestellmenge: 11
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BUK9Y4R4-40E,115 BUK9Y4R4-40E.pdf
BUK9Y4R4-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y4R8-60E,115 BUK9Y4R8-60E.pdf
BUK9Y4R8-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
auf Bestellung 10659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+3.44 EUR
50+2.63 EUR
100+2.37 EUR
Mindestbestellmenge: 4
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BUK9Y6R0-60E,115 BUK9Y6R0-60E.pdf
BUK9Y6R0-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6319 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.27 EUR
100+1.61 EUR
500+1.4 EUR
Mindestbestellmenge: 6
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PSMN011-60MLX PSMN011-60ML.pdf
PSMN011-60MLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 61A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2191 pF @ 30 V
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
13+1.46 EUR
50+1.08 EUR
100+0.96 EUR
Mindestbestellmenge: 8
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PSMN041-80YLX PSMN041-80YL.pdf
PSMN041-80YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.29 EUR
50+0.95 EUR
100+0.85 EUR
Mindestbestellmenge: 9
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PMT21EN,115 PMT21EN.pdf
PMT21EN,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 15 V
Produkt ist nicht verfügbar
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1PS70SB10,115 1PS70SB10.pdf
1PS70SB10,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
61+0.29 EUR
85+0.21 EUR
100+0.18 EUR
Mindestbestellmenge: 38
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1PS79SB31,115 1PS79SB31.pdf
1PS79SB31,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
auf Bestellung 3030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
60+0.3 EUR
83+0.21 EUR
100+0.19 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
2PB709ART,215 2PB709ART.pdf
2PB709ART,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
96+0.18 EUR
135+0.13 EUR
156+0.11 EUR
Mindestbestellmenge: 59
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2PD601ART,215 2PD601ART.pdf
2PD601ART,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 50V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
96+0.18 EUR
134+0.13 EUR
155+0.11 EUR
Mindestbestellmenge: 59
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2PD601BRL,215 2PD601BRL_2PD601BSL.pdf
2PD601BRL,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 50V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
77+0.23 EUR
108+0.16 EUR
125+0.14 EUR
Mindestbestellmenge: 48
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74HCT1G86GW,125 74HC_HCT1G86.pdf
74HCT1G86GW,125
Hersteller: Nexperia USA Inc.
Description: IC GATE XOR 1CH 2-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 13ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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74HCT574PW,118 74HC_HCT574.pdf
74HCT574PW,118
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 6mA, 6mA
Trigger Type: Positive Edge
Clock Frequency: 76 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 26404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.54 EUR
37+0.49 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
Mindestbestellmenge: 23
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BAS21AW,115 BAS21AW.pdf
BAS21AW,115
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 1668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
61+0.29 EUR
86+0.21 EUR
100+0.18 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-05V,115 BAS40-05V.pdf
BAS40-05V,115
Hersteller: Nexperia USA Inc.
Description: DIODE ARR SCHOT 40V 120MA SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-666
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS45A,113 BAS45A.pdf
BAS45A,113
Hersteller: Nexperia USA Inc.
Description: DIODE STANDARD 125V 250MA DO34
Packaging: Cut Tape (CT)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-34
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
auf Bestellung 6424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
37+0.49 EUR
51+0.35 EUR
100+0.31 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
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