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74AUP1G02GW-Q100H 74AUP1G02GW-Q100H Nexperia USA Inc. 74AUP1G02_Q100.pdf Description: IC GATE NOR 1CH 2-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Grade: Automotive
Qualification: AEC-Q100
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88+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
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74AUP2G57GUX 74AUP2G57GUX Nexperia USA Inc. 74AUP2G57.pdf Description: IC SCHMITT TRIGGER DUAL XQFN10
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 10-XQFN (1.4x1.8)
Schmitt Trigger Input: Yes
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 10-XFQFN
Packaging: Cut Tape (CT)
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74AUP2GU04GW-Q100H 74AUP2GU04GW-Q100H Nexperia USA Inc. 74AUP2GU04_Q100.pdf Description: IC INVERTER 2CH 2-INP 6TSSOP
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 30pF
Supplier Device Package: 6-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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NPIC6C4894D-Q100Y NPIC6C4894D-Q100Y Nexperia USA Inc. NPIC6C4894_Q100.pdf Description: IC SHIFT REGISTER 12BIT SO20
Packaging: Cut Tape (CT)
Number of Bits per Element: 12
Part Status: Last Time Buy
Supplier Device Package: 20-SO
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Serial to Parallel
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 20-SOIC (0.295", 7.50mm Width)
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NPIC6C4894PW-Q100J NPIC6C4894PW-Q100J Nexperia USA Inc. NPIC6C4894_Q100.pdf Description: IC SR OPEN DRAIN 12BIT 20-TSSOP
Qualification: AEC-Q100
Grade: Automotive
Number of Bits per Element: 12
Part Status: Last Time Buy
Supplier Device Package: 20-TSSOP
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Serial to Parallel
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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PSMN2R0-30YLDX PSMN2R0-30YLDX Nexperia USA Inc. PSMN2R0-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2969 pF @ 15 V
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PSMN6R5-30MLDX PSMN6R5-30MLDX Nexperia USA Inc. PSMN6R5-30MLD.pdf Description: MOSFET N-CH 30V 65A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
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74AUP2G57GUX 74AUP2G57GUX Nexperia USA Inc. 74AUP2G57.pdf Description: IC SCHMITT TRIGGER DUAL XQFN10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-XQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
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74AUP2G58GUX 74AUP2G58GUX Nexperia USA Inc. 74AUP2G58.pdf Description: IC MF CFG 2-CIR 3-IN 10XQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-XQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
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PMZB290UNE2YL PMZB290UNE2YL Nexperia USA Inc. PMZB290UNE2.pdf Description: MOSFET N-CH 20V 1.2A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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PMZB390UNEYL PMZB390UNEYL Nexperia USA Inc. PMZB390UNE.pdf Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
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BUK7880-55A/CUX BUK7880-55A/CUX Nexperia USA Inc. BUK7880-55A.pdf Description: MOSFET N-CH 55V 7A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BUK98150-55/CUF BUK98150-55/CUF Nexperia USA Inc. BUK98150-55.pdf Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK98150-55A/CUF BUK98150-55A/CUF Nexperia USA Inc. BUK98150-55A.pdf Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK98180-100A/CUX BUK98180-100A/CUX Nexperia USA Inc. BUK98180-100A.pdf Description: MOSFET N-CH 100V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9840-55/CUX BUK9840-55/CUX Nexperia USA Inc. BUK9840-55.pdf Description: MOSFET N-CH 55V 5A/10.7A SOT223
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
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BUK7880-55A/CUX BUK7880-55A/CUX Nexperia USA Inc. BUK7880-55A.pdf Description: MOSFET N-CH 55V 7A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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BUK98150-55A/CUF BUK98150-55A/CUF Nexperia USA Inc. BUK98150-55A.pdf Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK98180-100A/CUX BUK98180-100A/CUX Nexperia USA Inc. BUK98180-100A.pdf Description: MOSFET N-CH 100V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZX14C,133 NZX14C,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 14.05V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14.05 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
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97+0.21 EUR
156+0.13 EUR
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74AHC1G14GW-Q100,1 74AHC1G14GW-Q100,1 Nexperia USA Inc. 74AHC_AHCT1G14_Q100.pdf Description: IC INVERT SCHMITT 1CH 1IN 5TSSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 5-TSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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148+0.14 EUR
168+0.12 EUR
200+0.1 EUR
250+0.095 EUR
500+0.09 EUR
1000+0.086 EUR
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74LVC1G123DP,125 74LVC1G123DP,125 Nexperia USA Inc. 74LVC1G123.pdf Description: IC MMV 1-CIR 5.3-NS 8-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C
Propagation Delay: 5.3 ns
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Schmitt Trigger Input: Yes
Supplier Device Package: 8-TSSOP
Part Status: Active
Voltage - Supply: 1.65 V ~ 5.5 V
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37+0.57 EUR
41+0.51 EUR
100+0.44 EUR
250+0.4 EUR
500+0.39 EUR
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BAL99,215 BAL99,215 Nexperia USA Inc. BAL99.pdf Description: DIODE STANDARD 70V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
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BC56PA,115 BC56PA,115 Nexperia USA Inc. BC56PA_SER.pdf Description: TRANS NPN 80V 1A 3HUSON
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Cut Tape (CT)
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
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100+0.3 EUR
500+0.23 EUR
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BC847QASZ BC847QASZ Nexperia USA Inc. BC847QAS.pdf Description: TRANS 2NPN 45V 100MA DFN1010B-6
Part Status: Active
Supplier Device Package: DFN1010B-6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BC857QASZ BC857QASZ Nexperia USA Inc. BC857QAS.pdf Description: TRANS 2PNP 45V 100MA DFN1010B-6
Part Status: Active
Supplier Device Package: DFN1010B-6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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BCW61D,215 BCW61D,215 Nexperia USA Inc. BCW61.pdf Description: TRANS PNP 32V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSH205G2R BSH205G2R Nexperia USA Inc. BSH205G2.pdf Description: MOSFET P-CH 20V 2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 418 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84-B47,215 BZX84-B47,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 47V 250MW TO236AB
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
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NCR401UX NCR401UX Nexperia USA Inc. NCR401U.pdf Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NX7002BKXBZ NX7002BKXBZ Nexperia USA Inc. NX7002BKXB.pdf Description: MOSFET 2N-CH 60V 0.26A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 260mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PESD24VF1BLYL PESD24VF1BLYL Nexperia USA Inc. PESD24VF1BL.pdf Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PHDMI2F4X PHDMI2F4X Nexperia USA Inc. PHDMI2F4.pdf Description: TVS DIODE 4.6VC DFN2510A-10
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 4.6V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Current - Peak Pulse (10/1000µs): 5.2A (8/20µs)
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PHPT60406NYX PHPT60406NYX Nexperia USA Inc. PHPT60406NY.pdf Description: TRANS NPN 40V 6A LFPAK56 PWRSO8
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 153MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 380mV @ 300mA, 6A
Operating Temperature: 175°C (TJ)
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Transistor Type: NPN
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
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PHPT60406PYX PHPT60406PYX Nexperia USA Inc. PHPT60406PY.pdf Description: TRANS PNP 40V 6A LFPAK56 PWRSO8
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 540mV @ 300mA, 6A
Operating Temperature: 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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PHPT60410PYX PHPT60410PYX Nexperia USA Inc. PHPT60410PY.pdf Description: TRANS PNP 40V 10A LFPAK56 PWRSO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 10A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
Frequency - Transition: 97MHz
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q100
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PHPT60606NYX PHPT60606NYX Nexperia USA Inc. PHPT60606NY.pdf Description: TRANS NPN 60V 6A LFPAK56 PWRSO8
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 6A
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
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PHPT610030NKX PHPT610030NKX Nexperia USA Inc. PHPT610030NK.pdf Description: TRANS 2NPN 100V 3A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
Frequency - Transition: 140MHz
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
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PHPT610030NPKX PHPT610030NPKX Nexperia USA Inc. PHPT610030NPK.pdf Description: TRANS NPN/PNP 100V 3A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 175°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 110mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
Frequency - Transition: 140MHz, 125MHz
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
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PHPT610030PKX PHPT610030PKX Nexperia USA Inc. PHPT610030PK.pdf Description: TRANS 2PNP 100V 3A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 3A
Power - Max: 1.25W
Operating Temperature: 175°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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PHPT610035PKX PHPT610035PKX Nexperia USA Inc. PHPT610035PK.pdf Description: TRANS 2PNP 100V 3A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 125MHz
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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PHPT61006PYX PHPT61006PYX Nexperia USA Inc. PHPT61006PY.pdf Description: TRANS PNP 100V 6A LFPAK56 PWRSO8
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 116MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 130mV @ 50mA, 1A
Operating Temperature: 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
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100+0.82 EUR
500+0.63 EUR
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PMEG060V050EPDZ PMEG060V050EPDZ Nexperia USA Inc. PMEG060V050EPD.pdf Description: DIODE SCHOTTKY 60V 5A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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PMEG060V100EPDZ PMEG060V100EPDZ Nexperia USA Inc. PMEG060V100EPD.pdf Description: DIODE SCHOTTKY 60V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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PMEG10020AELRX PMEG10020AELRX Nexperia USA Inc. PMEG10020AELR.pdf Description: DIODE SCHOTTKY 100V 2A SOD123W
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
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PMEG2002AESF,315 PMEG2002AESF,315 Nexperia USA Inc. PMEG2002AESF.pdf Description: DIODE SCHOTTK 20V 200MA DSN06032
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.9 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 10887 Stücke:
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82+0.25 EUR
101+0.2 EUR
500+0.15 EUR
1000+0.12 EUR
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PMEG2005ESFYL PMEG2005ESFYL Nexperia USA Inc. PMEG2005ESF.pdf Description: DIODE SCHOTTK 20V 500MA DSN06032
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.9 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.5 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
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32+0.67 EUR
52+0.4 EUR
73+0.29 EUR
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PMEG3002AESFYL PMEG3002AESFYL Nexperia USA Inc. PMEG3002AESF.pdf Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.37 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 80 µA @ 30 V
Produkt ist nicht verfügbar
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PMEG3005AESFYL PMEG3005AESFYL Nexperia USA Inc. PMEG3005AESF.pdf Description: DIODE SCHOTTK 30V 500MA DSN06032
Current - Reverse Leakage @ Vr: 80 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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PMEG3005ESFYL PMEG3005ESFYL Nexperia USA Inc. PMEG3005ESF.pdf Description: DIODE SCHOTTK 30V 500MA DSN06032
Current - Reverse Leakage @ Vr: 9 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 21pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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PMV130ENEAR PMV130ENEAR Nexperia USA Inc. PMV130ENEA.pdf Description: MOSFET N-CH 40V 2.1A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 460mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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PMV20ENR PMV20ENR Nexperia USA Inc. PMV20EN.pdf Description: MOSFET N-CH 30V 6A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Produkt ist nicht verfügbar
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PMV250EPEAR PMV250EPEAR Nexperia USA Inc. PMV250EPEA.pdf Description: MOSFET P-CH 40V 1.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMV27UPER PMV27UPER Nexperia USA Inc. PMV27UPE.pdf Description: MOSFET P-CH 20V 4.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 490mW (Ta), 4.15W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
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PMV37EN2R PMV37EN2R Nexperia USA Inc. PMV37EN2.pdf Description: MOSFET N-CH 30V 4.5A TO236AB
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
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PMV45EN2R PMV45EN2R Nexperia USA Inc. PMV45EN2.pdf Description: MOSFET N-CH 30V 4.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PMV65XPEAR PMV65XPEAR Nexperia USA Inc. PMV65XPEA.pdf Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMXB56ENZ PMXB56ENZ Nexperia USA Inc. PMXB56EN.pdf Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PMXB75UPEZ PMXB75UPEZ Nexperia USA Inc. PMXB75UPE.pdf Description: MOSFET P-CH 20V 2.9A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Packaging: Cut Tape (CT)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Produkt ist nicht verfügbar
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PMZ130UNEYL PMZ130UNEYL Nexperia USA Inc. PMZ130UNE.pdf Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 7613 Stücke:
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74AUP1G02GW-Q100H 74AUP1G02_Q100.pdf
74AUP1G02GW-Q100H
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 1CH 2-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Grade: Automotive
Qualification: AEC-Q100
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74AUP2G57GUX 74AUP2G57.pdf
74AUP2G57GUX
Hersteller: Nexperia USA Inc.
Description: IC SCHMITT TRIGGER DUAL XQFN10
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 10-XQFN (1.4x1.8)
Schmitt Trigger Input: Yes
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 10-XFQFN
Packaging: Cut Tape (CT)
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74AUP2GU04GW-Q100H 74AUP2GU04_Q100.pdf
74AUP2GU04GW-Q100H
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 2CH 2-INP 6TSSOP
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 30pF
Supplier Device Package: 6-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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NPIC6C4894D-Q100Y NPIC6C4894_Q100.pdf
NPIC6C4894D-Q100Y
Hersteller: Nexperia USA Inc.
Description: IC SHIFT REGISTER 12BIT SO20
Packaging: Cut Tape (CT)
Number of Bits per Element: 12
Part Status: Last Time Buy
Supplier Device Package: 20-SO
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Serial to Parallel
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 20-SOIC (0.295", 7.50mm Width)
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NPIC6C4894PW-Q100J NPIC6C4894_Q100.pdf
NPIC6C4894PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC SR OPEN DRAIN 12BIT 20-TSSOP
Qualification: AEC-Q100
Grade: Automotive
Number of Bits per Element: 12
Part Status: Last Time Buy
Supplier Device Package: 20-TSSOP
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Serial to Parallel
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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PSMN2R0-30YLDX PSMN2R0-30YLD.pdf
PSMN2R0-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2969 pF @ 15 V
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PSMN6R5-30MLDX PSMN6R5-30MLD.pdf
PSMN6R5-30MLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 65A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
Produkt ist nicht verfügbar
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74AUP2G57GUX 74AUP2G57.pdf
74AUP2G57GUX
Hersteller: Nexperia USA Inc.
Description: IC SCHMITT TRIGGER DUAL XQFN10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-XQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
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4000+0.25 EUR
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74AUP2G58GUX 74AUP2G58.pdf
74AUP2G58GUX
Hersteller: Nexperia USA Inc.
Description: IC MF CFG 2-CIR 3-IN 10XQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-XQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
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AnzahlPrivatkunde
4000+0.24 EUR
8000+0.23 EUR
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PMZB290UNE2YL PMZB290UNE2.pdf
PMZB290UNE2YL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.2A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMZB390UNEYL PMZB390UNE.pdf
PMZB390UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
Produkt ist nicht verfügbar
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BUK7880-55A/CUX BUK7880-55A.pdf
BUK7880-55A/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK98150-55/CUF BUK98150-55.pdf
BUK98150-55/CUF
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK98150-55A/CUF BUK98150-55A.pdf
BUK98150-55A/CUF
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK98180-100A/CUX BUK98180-100A.pdf
BUK98180-100A/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9840-55/CUX BUK9840-55.pdf
BUK9840-55/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5A/10.7A SOT223
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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BUK7880-55A/CUX BUK7880-55A.pdf
BUK7880-55A/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1327 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
20+1.09 EUR
50+0.8 EUR
100+0.7 EUR
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BUK98150-55A/CUF BUK98150-55A.pdf
BUK98150-55A/CUF
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK98180-100A/CUX BUK98180-100A.pdf
BUK98180-100A/CUX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZX14C,133 NZX_SER.pdf
NZX14C,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 14.05V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14.05 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
auf Bestellung 19348 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
97+0.21 EUR
156+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
2000+0.076 EUR
5000+0.065 EUR
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74AHC1G14GW-Q100,1 74AHC_AHCT1G14_Q100.pdf
74AHC1G14GW-Q100,1
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 1CH 1IN 5TSSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 5-TSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 33293 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
148+0.14 EUR
168+0.12 EUR
200+0.1 EUR
250+0.095 EUR
500+0.09 EUR
1000+0.086 EUR
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74LVC1G123DP,125 74LVC1G123.pdf
74LVC1G123DP,125
Hersteller: Nexperia USA Inc.
Description: IC MMV 1-CIR 5.3-NS 8-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C
Propagation Delay: 5.3 ns
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Schmitt Trigger Input: Yes
Supplier Device Package: 8-TSSOP
Part Status: Active
Voltage - Supply: 1.65 V ~ 5.5 V
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26+0.82 EUR
37+0.57 EUR
41+0.51 EUR
100+0.44 EUR
250+0.4 EUR
500+0.39 EUR
1000+0.38 EUR
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BAL99,215 BAL99.pdf
BAL99,215
Hersteller: Nexperia USA Inc.
Description: DIODE STANDARD 70V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 92 Stücke:
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AnzahlPrivatkunde
56+0.38 EUR
89+0.24 EUR
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BC56PA,115 BC56PA_SER.pdf
BC56PA,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 1A 3HUSON
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Cut Tape (CT)
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
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28+0.77 EUR
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BC847QASZ BC847QAS.pdf
BC847QASZ
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA DFN1010B-6
Part Status: Active
Supplier Device Package: DFN1010B-6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3039 Stücke:
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31+0.69 EUR
50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
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2000+0.15 EUR
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BC857QASZ BC857QAS.pdf
BC857QASZ
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 45V 100MA DFN1010B-6
Part Status: Active
Supplier Device Package: DFN1010B-6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 33610 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.42 EUR
70+0.3 EUR
100+0.26 EUR
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BCW61D,215 BCW61.pdf
BCW61D,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 32V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSH205G2R BSH205G2.pdf
BSH205G2R
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 418 pF @ 10 V
Qualification: AEC-Q101
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BZX84-B47,215 BZX84_SER.pdf
BZX84-B47,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 47V 250MW TO236AB
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
auf Bestellung 28 Stücke:
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NCR401UX NCR401U.pdf
NCR401UX
Hersteller: Nexperia USA Inc.
Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NX7002BKXBZ NX7002BKXB.pdf
NX7002BKXBZ
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.26A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 260mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PESD24VF1BLYL PESD24VF1BL.pdf
PESD24VF1BLYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PHDMI2F4X PHDMI2F4.pdf
PHDMI2F4X
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 4.6VC DFN2510A-10
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 4.6V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Current - Peak Pulse (10/1000µs): 5.2A (8/20µs)
auf Bestellung 8156 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
53+0.4 EUR
59+0.36 EUR
100+0.31 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.26 EUR
2500+0.25 EUR
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PHPT60406NYX PHPT60406NY.pdf
PHPT60406NYX
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 6A LFPAK56 PWRSO8
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 153MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 380mV @ 300mA, 6A
Operating Temperature: 175°C (TJ)
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Transistor Type: NPN
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1578 Stücke:
Lieferzeit 10-14 Tag (e)
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12+1.87 EUR
19+1.15 EUR
100+0.75 EUR
500+0.57 EUR
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PHPT60406PYX PHPT60406PY.pdf
PHPT60406PYX
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 6A LFPAK56 PWRSO8
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 540mV @ 300mA, 6A
Operating Temperature: 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
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PHPT60410PYX PHPT60410PY.pdf
PHPT60410PYX
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 10A LFPAK56 PWRSO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 10A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
Frequency - Transition: 97MHz
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 947 Stücke:
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12+1.88 EUR
18+1.18 EUR
100+0.76 EUR
500+0.6 EUR
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PHPT60606NYX PHPT60606NY.pdf
PHPT60606NYX
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 60V 6A LFPAK56 PWRSO8
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 6A
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
19+1.15 EUR
100+0.75 EUR
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PHPT610030NKX PHPT610030NK.pdf
PHPT610030NKX
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 100V 3A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
Frequency - Transition: 140MHz
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
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11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
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PHPT610030NPKX PHPT610030NPK.pdf
PHPT610030NPKX
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 100V 3A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 175°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 110mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
Frequency - Transition: 140MHz, 125MHz
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
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PHPT610030PKX PHPT610030PK.pdf
PHPT610030PKX
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 100V 3A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 3A
Power - Max: 1.25W
Operating Temperature: 175°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.18 EUR
16+1.37 EUR
100+0.89 EUR
500+0.69 EUR
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PHPT610035PKX PHPT610035PK.pdf
PHPT610035PKX
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 100V 3A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 125MHz
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11323 Stücke:
Lieferzeit 10-14 Tag (e)
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9+2.59 EUR
13+1.64 EUR
100+1.08 EUR
500+0.84 EUR
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PHPT61006PYX PHPT61006PY.pdf
PHPT61006PYX
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 100V 6A LFPAK56 PWRSO8
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 116MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 130mV @ 50mA, 1A
Operating Temperature: 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
17+1.26 EUR
100+0.82 EUR
500+0.63 EUR
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PMEG060V050EPDZ PMEG060V050EPD.pdf
PMEG060V050EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 5A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2064 Stücke:
Lieferzeit 10-14 Tag (e)
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12+1.78 EUR
19+1.11 EUR
100+0.73 EUR
500+0.55 EUR
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PMEG060V100EPDZ PMEG060V100EPD.pdf
PMEG060V100EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 84282 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
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PMEG10020AELRX PMEG10020AELR.pdf
PMEG10020AELRX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 2A SOD123W
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
auf Bestellung 22367 Stücke:
Lieferzeit 10-14 Tag (e)
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23+0.92 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
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PMEG2002AESF,315 PMEG2002AESF.pdf
PMEG2002AESF,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 200MA DSN06032
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.9 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 10887 Stücke:
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50+0.42 EUR
82+0.25 EUR
101+0.2 EUR
500+0.15 EUR
1000+0.12 EUR
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PMEG2005ESFYL PMEG2005ESF.pdf
PMEG2005ESFYL
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 500MA DSN06032
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.9 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.5 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
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32+0.67 EUR
52+0.4 EUR
73+0.29 EUR
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PMEG3002AESFYL PMEG3002AESF.pdf
PMEG3002AESFYL
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.37 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 80 µA @ 30 V
Produkt ist nicht verfügbar
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PMEG3005AESFYL PMEG3005AESF.pdf
PMEG3005AESFYL
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 30V 500MA DSN06032
Current - Reverse Leakage @ Vr: 80 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 9372 Stücke:
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39+0.55 EUR
65+0.32 EUR
104+0.2 EUR
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PMEG3005ESFYL PMEG3005ESF.pdf
PMEG3005ESFYL
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 30V 500MA DSN06032
Current - Reverse Leakage @ Vr: 9 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DSN0603-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 21pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1.42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 13711 Stücke:
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53+0.39 EUR
79+0.27 EUR
106+0.2 EUR
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PMV130ENEAR PMV130ENEA.pdf
PMV130ENEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.1A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 460mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
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23+0.92 EUR
38+0.56 EUR
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PMV20ENR PMV20EN.pdf
PMV20ENR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 6A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Produkt ist nicht verfügbar
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PMV250EPEAR PMV250EPEA.pdf
PMV250EPEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 1.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMV27UPER PMV27UPE.pdf
PMV27UPER
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 490mW (Ta), 4.15W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
auf Bestellung 6184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
38+0.56 EUR
100+0.43 EUR
500+0.37 EUR
1000+0.29 EUR
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PMV37EN2R PMV37EN2.pdf
PMV37EN2R
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A TO236AB
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
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39+0.55 EUR
53+0.39 EUR
100+0.35 EUR
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PMV45EN2R PMV45EN2.pdf
PMV45EN2R
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PMV65XPEAR PMV65XPEA.pdf
PMV65XPEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMXB56ENZ PMXB56EN.pdf
PMXB56ENZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PMXB75UPEZ PMXB75UPE.pdf
PMXB75UPEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.9A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Packaging: Cut Tape (CT)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Produkt ist nicht verfügbar
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PMZ130UNEYL PMZ130UNE.pdf
PMZ130UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 7613 Stücke:
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