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PDTC123EU,115

PDTC123EU,115 Nexperia

PDTC123E_SERIES.pdf
Hersteller: Nexperia
Digital Transistors The factory is currently not accepting orders for this product.
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14+0.21 EUR
23+0.12 EUR
100+0.079 EUR
500+0.056 EUR
1000+0.049 EUR
3000+0.046 EUR
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Technische Details PDTC123EU,115 Nexperia

Description: TRANS PREBIAS NPN 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V, Supplier Device Package: SOT-323, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Grade: Automotive, Qualification: AEC-Q100, Resistors Included: R1 and R2.

Weitere Produktangebote PDTC123EU,115 nach Preis ab 0.051 EUR bis 0.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PDTC123EU,115 PDTC123EU,115 Nexperia USA Inc. PDTC123E_SERIES.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
134+0.13 EUR
217+0.081 EUR
500+0.059 EUR
1000+0.051 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123EU,115 NXP/Nexperia/We-En PDTC123E_NXP.pdf Транзистор цифровий, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, Тип монт. = smd, hFE = 30 @ 20 мA, 5 В, Icutoff-max = 1 мкА, Ptot, Вт = 0,2, R1, кОм = 2,2, R2, кОм = 2,2, Uceo(sat), В @ Ic, Ib = 0,15 @ 500 мкA, 10 мА, Тексп, °С = -65...+150,... Транзисто
Anzahl je Verpackung: 3000 Stücke
verfügbar 215 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123EU,115 PDTC123E_SERIES.pdf
PDTC123EU,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
84+0.21 EUR
134+0.13 EUR
217+0.081 EUR
500+0.059 EUR
1000+0.051 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123EU,115 PDTC123E_NXP.pdf
Hersteller: NXP/Nexperia/We-En
Транзистор цифровий, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, Тип монт. = smd, hFE = 30 @ 20 мA, 5 В, Icutoff-max = 1 мкА, Ptot, Вт = 0,2, R1, кОм = 2,2, R2, кОм = 2,2, Uceo(sat), В @ Ic, Ib = 0,15 @ 500 мкA, 10 мА, Тексп, °С = -65...+150,... Транзисто
Anzahl je Verpackung: 3000 Stücke
verfügbar 215 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH