PDTC123ET,215 NEXPERIA
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
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Technische Details PDTC123ET,215 NEXPERIA
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Grade: Automotive, Qualification: AEC-Q100, Resistors Included: R1 and R2.
Weitere Produktangebote PDTC123ET,215
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
PDTC123ET,215 | NXP |
Цифровой транзистор 2.2/2.2 кОм, SOT-23 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PDTC123ET,215 | NXP/Nexperia/We-En |
Транзистор NPN, Ptot, Вт = 0,35, Uceo, В = 50, Ic = 100 мА, Тип монт. = smd, hFE = 30 @ 20 мA, 5 В, Uceo(sat), В @ Ic, Ib = 0.15 @ 500 мкA, 10 мA, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
PDTC123ET,215 | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q100 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
PDTC123ET,215 | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PDTC123ET,215 | Nexperia |
Digital Transistors The factory is currently not accepting orders for this product. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PDTC123ET,215 |
|
Hersteller: NXP
Цифровой транзистор 2.2/2.2 кОм, SOT-23 Транзистори
Цифровой транзистор 2.2/2.2 кОм, SOT-23 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDTC123ET,215 |
|
Hersteller: NXP/Nexperia/We-En
Транзистор NPN, Ptot, Вт = 0,35, Uceo, В = 50, Ic = 100 мА, Тип монт. = smd, hFE = 30 @ 20 мA, 5 В, Uceo(sat), В @ Ic, Ib = 0.15 @ 500 мкA, 10 мA, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Транзистор NPN, Ptot, Вт = 0,35, Uceo, В = 50, Ic = 100 мА, Тип монт. = smd, hFE = 30 @ 20 мA, 5 В, Uceo(sat), В @ Ic, Ib = 0.15 @ 500 мкA, 10 мA, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDTC123ET,215 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PDTC123ET,215 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDTC123ET,215 |
|
Hersteller: Nexperia
Digital Transistors The factory is currently not accepting orders for this product.
Digital Transistors The factory is currently not accepting orders for this product.
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen
Stück im Wert von UAH