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PESD12VV1BL,315 PESD12VV1BL,315 Nexperia USA Inc. PESD12VV1BL.pdf Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PESD1LVDS,115 PESD1LVDS,115 Nexperia USA Inc. PESD1LVDS.pdf Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PESD36VS1UL,315 PESD36VS1UL,315 Nexperia USA Inc. PESD36VS1UL.pdf Description: TVS DIODE 36VWM 80VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 38.2V
Voltage - Clamping (Max) @ Ipp: 80V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 180000 Stücke:
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10000+0.051 EUR
Mindestbestellmenge: 10000
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PESD5V0L2UMB,315 PESD5V0L2UMB,315 Nexperia USA Inc. PESD5V0L2UMB.pdf Description: TVS DIODE 5VWM 15VC DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006B-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.1 EUR
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PESD5V0X1BCL,315 PESD5V0X1BCL,315 Nexperia USA Inc. PESD5V0X1BCL.pdf Description: TVS DIODE 5.5VWM 18VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 0.49pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.1V
Voltage - Clamping (Max) @ Ipp: 18V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PH7630DLX Nexperia USA Inc. Description: MOSFET N-CH 30V LFPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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PMBT3904MB,315 PMBT3904MB,315 Nexperia USA Inc. PMBT3904MB.pdf Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMC85XP,115 PMC85XP,115 Nexperia USA Inc. PMC85XP.pdf Description: MOSFET NPN/P CH 30V 2.6A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 2.6A
Mounting Type: Surface Mount
Transistor Type: NPN Pre-Biased, P-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PMDPB58UPE,115 PMDPB58UPE,115 Nexperia USA Inc. PMDPB58UPE.pdf Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
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3000+0.21 EUR
6000+0.2 EUR
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PMDPB80XP,115 PMDPB80XP,115 Nexperia USA Inc. PMDPB80XP.pdf Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Produkt ist nicht verfügbar
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PMEG2005EPK,315 PMEG2005EPK,315 Nexperia USA Inc. PMEG2005EPK.pdf Description: DIODE SCHOTT 20V 500MA DFN1608D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG2020EPK,315 PMEG2020EPK,315 Nexperia USA Inc. PMEG2020EPK.pdf Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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8000+0.1 EUR
Mindestbestellmenge: 8000
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PMEG4005EPK,315 PMEG4005EPK,315 Nexperia USA Inc. PMEG4005EPK.pdf Description: DIODE SCHOTT 40V 500MA DFN1608D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG4010EPK,315 PMEG4010EPK,315 Nexperia USA Inc. PMEG4010EPK.pdf Description: DIODE SCHOTTKY 40V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG4010ETP,115 PMEG4010ETP,115 Nexperia USA Inc. PMEG4010ETP.pdf Description: DIODE SCHOTTK 40V 1A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 9000 Stücke:
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3000+0.14 EUR
Mindestbestellmenge: 3000
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PMEG4010ETR,115 PMEG4010ETR,115 Nexperia USA Inc. PMEG4010ETR.pdf Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 21000 Stücke:
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3000+0.098 EUR
6000+0.094 EUR
9000+0.083 EUR
21000+0.08 EUR
Mindestbestellmenge: 3000
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PMEG4020EPK,315 PMEG4020EPK,315 Nexperia USA Inc. PMEG4020EPK.pdf Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 184000 Stücke:
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8000+0.11 EUR
16000+0.097 EUR
24000+0.094 EUR
Mindestbestellmenge: 8000
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PMEG4020ETP,115 PMEG4020ETP,115 Nexperia USA Inc. PMEG4020ETP.pdf Description: DIODE SCHOTTK 40V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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PMEG4030ETP,115 PMEG4030ETP,115 Nexperia USA Inc. PMEG4030ETP.pdf Description: DIODE SCHOTTK 40V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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PMEG4050ETP,115 PMEG4050ETP,115 Nexperia USA Inc. PMEG4050ETP.pdf Description: DIODE SCHOTTK 40V 5A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
auf Bestellung 15000 Stücke:
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3000+0.25 EUR
6000+0.24 EUR
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PMEG6010ETR,115 PMEG6010ETR,115 Nexperia USA Inc. PMEG6010ETR.pdf Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
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3000+0.096 EUR
6000+0.091 EUR
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PMEG6020ETR,115 PMEG6020ETR,115 Nexperia USA Inc. PMEG6020ETR.pdf Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
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PMEG6030ETPX PMEG6030ETPX Nexperia USA Inc. PMEG6030ETP.pdf Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 51000 Stücke:
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3000+0.23 EUR
6000+0.2 EUR
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PMFPB8032XP,115 PMFPB8032XP,115 Nexperia USA Inc. PMFPB8032XP.pdf Description: MOSFET P-CH 20V 2.7A HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Produkt ist nicht verfügbar
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PMPB11EN,115 PMPB11EN,115 Nexperia USA Inc. PMPB11EN.pdf Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 78000 Stücke:
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3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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PMPB20XPE,115 PMPB20XPE,115 Nexperia USA Inc. PMPB20XPE.pdf Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.26 EUR
Mindestbestellmenge: 3000
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PMPB29XPE,115 PMPB29XPE,115 Nexperia USA Inc. PMPB29XPE.pdf Description: MOSFET P-CH 20V 5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
Produkt ist nicht verfügbar
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PMPB33XP,115 PMPB33XP,115 Nexperia USA Inc. PMPB33XP.pdf Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
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PMPB40SNA,115 PMPB40SNA,115 Nexperia USA Inc. PMPB40SNA.pdf Description: MOSFET N-CH 60V 12.9A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Produkt ist nicht verfügbar
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PMPB47XP,115 PMPB47XP,115 Nexperia USA Inc. PMPB47XP.pdf Description: MOSFET P-CH 30V 4A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
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PMPB48EP,115 PMPB48EP,115 Nexperia USA Inc. PMPB48EP.pdf Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Produkt ist nicht verfügbar
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PMZB290UN,315 PMZB290UN,315 Nexperia USA Inc. PMZB290UNE.pdf Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Produkt ist nicht verfügbar
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PMZB420UN,315 PMZB420UN,315 Nexperia USA Inc. PMZB420UN.pdf Description: MOSFET N-CH 30V SGL 3DFN
Produkt ist nicht verfügbar
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PNS40010ER,115 PNS40010ER,115 Nexperia USA Inc. PNS40010ER.pdf Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
21000+0.1 EUR
30000+0.098 EUR
75000+0.088 EUR
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PRTR5V0U2AX/S911,2 PRTR5V0U2AX/S911,2 Nexperia USA Inc. PRTR5V0U2AX.pdf Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Capacitance @ Frequency: 1.8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PSMN013-100YSEX PSMN013-100YSEX Nexperia USA Inc. PSMN013-100YSE.pdf Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
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1500+1.26 EUR
3000+1.22 EUR
4500+1.21 EUR
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PTVS10VP1UTP,115 PTVS10VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 10VWM 17V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS11VP1UTP,115 PTVS11VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 11VWM 18.2VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS17VP1UTP,115 PTVS17VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 17VWM 27.6VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS22VP1UTP,115 PTVS22VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 22VWM 35.5VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS28VP1UTP,115 PTVS28VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 28VWM 45.4VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS33VP1UTP,115 PTVS33VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 33VWM 53.3VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PTVS36VP1UTP,115 PTVS36VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 36VWM 58.1VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+0.22 EUR
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PTVS3V3P1UTP,115 PTVS3V3P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 3.3VWM 8V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 75A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PTVS43VP1UTP,115 PTVS43VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 43VWM 69.4VC CFP5
Produkt ist nicht verfügbar
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PTVS5V0P1UTP,115 PTVS5V0P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 5VWM 9.2V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS60VP1UTP,115 PTVS60VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 60VWM 96.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS6V5P1UTP,115 PTVS6V5P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS7V5P1UTP,115 PTVS7V5P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS8V0P1UTP,115 PTVS8V0P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 8VWM 13.6V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PUMB9,125 PUMB9,125 Nexperia USA Inc. PUMB9.pdf Description: TRANS PREBIAS 2PNP 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PSMN1R9-40PLQ PSMN1R9-40PLQ Nexperia USA Inc. PSMN1R9-40PL.pdf Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
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3+7.87 EUR
10+5.21 EUR
100+3.7 EUR
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PSMN3R9-60PSQ PSMN3R9-60PSQ Nexperia USA Inc. PSMN3R9-60PS.pdf Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 4023 Stücke:
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4+5.49 EUR
10+4.93 EUR
100+4.04 EUR
500+3.44 EUR
1000+2.9 EUR
2000+2.75 EUR
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BUK7613-100E,118 BUK7613-100E,118 Nexperia USA Inc. BUK7613-100E.pdf Description: MOSFET N-CH 100V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6320 Stücke:
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10+3.38 EUR
100+2.34 EUR
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BUK761R7-40E,118 BUK761R7-40E,118 Nexperia USA Inc. BUK761R7-40E.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9611-80E,118 BUK9611-80E,118 Nexperia USA Inc. BUK9611-80E.pdf Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Qualification: AEC-Q101
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BUK962R8-60E,118 BUK962R8-60E,118 Nexperia USA Inc. BUK962R8-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Qualification: AEC-Q101
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BUK963R1-40E,118 BUK963R1-40E,118 Nexperia USA Inc. BUK963R1-40E.pdf Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK963R3-60E,118 BUK963R3-60E,118 Nexperia USA Inc. BUK963R3-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3870 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.3 EUR
10+4.35 EUR
100+3.06 EUR
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BUK964R2-60E,118 BUK964R2-60E,118 Nexperia USA Inc. BUK964R2-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PESD12VV1BL,315 PESD12VV1BL.pdf
PESD12VV1BL,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PESD1LVDS,115 PESD1LVDS.pdf
PESD1LVDS,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PESD36VS1UL,315 PESD36VS1UL.pdf
PESD36VS1UL,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 36VWM 80VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 38.2V
Voltage - Clamping (Max) @ Ipp: 80V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.051 EUR
Mindestbestellmenge: 10000
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PESD5V0L2UMB,315 PESD5V0L2UMB.pdf
PESD5V0L2UMB,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 15VC DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006B-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.1 EUR
Mindestbestellmenge: 10000
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PESD5V0X1BCL,315 PESD5V0X1BCL.pdf
PESD5V0X1BCL,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 18VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 0.49pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.1V
Voltage - Clamping (Max) @ Ipp: 18V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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PH7630DLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V LFPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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PMBT3904MB,315 PMBT3904MB.pdf
PMBT3904MB,315
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMC85XP,115 PMC85XP.pdf
PMC85XP,115
Hersteller: Nexperia USA Inc.
Description: MOSFET NPN/P CH 30V 2.6A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 2.6A
Mounting Type: Surface Mount
Transistor Type: NPN Pre-Biased, P-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PMDPB58UPE,115 PMDPB58UPE.pdf
PMDPB58UPE,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.2 EUR
Mindestbestellmenge: 3000
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PMDPB80XP,115 PMDPB80XP.pdf
PMDPB80XP,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Produkt ist nicht verfügbar
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PMEG2005EPK,315 PMEG2005EPK.pdf
PMEG2005EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTT 20V 500MA DFN1608D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG2020EPK,315 PMEG2020EPK.pdf
PMEG2020EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.1 EUR
Mindestbestellmenge: 8000
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PMEG4005EPK,315 PMEG4005EPK.pdf
PMEG4005EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTT 40V 500MA DFN1608D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG4010EPK,315 PMEG4010EPK.pdf
PMEG4010EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG4010ETP,115 PMEG4010ETP.pdf
PMEG4010ETP,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 1A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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PMEG4010ETR,115 PMEG4010ETR.pdf
PMEG4010ETR,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.098 EUR
6000+0.094 EUR
9000+0.083 EUR
21000+0.08 EUR
Mindestbestellmenge: 3000
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PMEG4020EPK,315 PMEG4020EPK.pdf
PMEG4020EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 184000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.11 EUR
16000+0.097 EUR
24000+0.094 EUR
Mindestbestellmenge: 8000
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PMEG4020ETP,115 PMEG4020ETP.pdf
PMEG4020ETP,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMEG4030ETP,115 PMEG4030ETP.pdf
PMEG4030ETP,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMEG4050ETP,115 PMEG4050ETP.pdf
PMEG4050ETP,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 5A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.24 EUR
15000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMEG6010ETR,115 PMEG6010ETR.pdf
PMEG6010ETR,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.096 EUR
6000+0.091 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMEG6020ETR,115 PMEG6020ETR.pdf
PMEG6020ETR,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMEG6030ETPX PMEG6030ETP.pdf
PMEG6030ETPX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.2 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMFPB8032XP,115 PMFPB8032XP.pdf
PMFPB8032XP,115
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMPB11EN,115 PMPB11EN.pdf
PMPB11EN,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMPB20XPE,115 PMPB20XPE.pdf
PMPB20XPE,115
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMPB29XPE,115 PMPB29XPE.pdf
PMPB29XPE,115
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
Produkt ist nicht verfügbar
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PMPB33XP,115 PMPB33XP.pdf
PMPB33XP,115
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMPB40SNA,115 PMPB40SNA.pdf
PMPB40SNA,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.9A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Produkt ist nicht verfügbar
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PMPB47XP,115 PMPB47XP.pdf
PMPB47XP,115
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PMPB48EP,115 PMPB48EP.pdf
PMPB48EP,115
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Produkt ist nicht verfügbar
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PMZB290UN,315 PMZB290UNE.pdf
PMZB290UN,315
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Produkt ist nicht verfügbar
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PMZB420UN,315 PMZB420UN.pdf
PMZB420UN,315
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V SGL 3DFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PNS40010ER,115 PNS40010ER.pdf
PNS40010ER,115
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
21000+0.1 EUR
30000+0.098 EUR
75000+0.088 EUR
Mindestbestellmenge: 3000
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PRTR5V0U2AX/S911,2 PRTR5V0U2AX.pdf
PRTR5V0U2AX/S911,2
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Capacitance @ Frequency: 1.8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PSMN013-100YSEX PSMN013-100YSE.pdf
PSMN013-100YSEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.26 EUR
3000+1.22 EUR
4500+1.21 EUR
Mindestbestellmenge: 1500
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PTVS10VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS10VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS11VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS11VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 11VWM 18.2VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS17VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS17VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 17VWM 27.6VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS22VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS22VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 22VWM 35.5VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS28VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS28VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 28VWM 45.4VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS33VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS33VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 33VWM 53.3VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
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PTVS36VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS36VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 36VWM 58.1VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
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PTVS3V3P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS3V3P1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 8V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 75A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
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Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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PTVS43VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS43VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 43VWM 69.4VC CFP5
Produkt ist nicht verfügbar
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PTVS5V0P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS5V0P1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9.2V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
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PTVS60VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS60VP1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 60VWM 96.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS6V5P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS6V5P1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 6.5VWM 11.2VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS7V5P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS7V5P1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS8V0P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS8V0P1UTP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 8VWM 13.6V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PUMB9,125 PUMB9.pdf
PUMB9,125
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PSMN1R9-40PLQ PSMN1R9-40PL.pdf
PSMN1R9-40PLQ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.87 EUR
10+5.21 EUR
100+3.7 EUR
Mindestbestellmenge: 3
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PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 4023 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.49 EUR
10+4.93 EUR
100+4.04 EUR
500+3.44 EUR
1000+2.9 EUR
2000+2.75 EUR
Mindestbestellmenge: 4
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BUK7613-100E,118 BUK7613-100E.pdf
BUK7613-100E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.38 EUR
100+2.34 EUR
Mindestbestellmenge: 4
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BUK761R7-40E,118 BUK761R7-40E.pdf
BUK761R7-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9611-80E,118 BUK9611-80E.pdf
BUK9611-80E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.36 EUR
100+2.33 EUR
Mindestbestellmenge: 4
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BUK962R8-60E,118 BUK962R8-60E.pdf
BUK962R8-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.22 EUR
10+4.76 EUR
Mindestbestellmenge: 3
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BUK963R1-40E,118 BUK963R1-40E.pdf
BUK963R1-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK963R3-60E,118 BUK963R3-60E.pdf
BUK963R3-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
10+4.35 EUR
100+3.06 EUR
Mindestbestellmenge: 3
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BUK964R2-60E,118 BUK964R2-60E.pdf
BUK964R2-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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