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Technische Details PMDXB950UPELZ Nexperia
Description: NEXPERIA - PMDXB950UPELZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 500 mA, 500 mA, 1.02 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 500mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 500mA, Drain-Source-Durchgangswiderstand, p-Kanal: 1.02ohm, Verlustleistung, p-Kanal: 380mW, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: DFN1010B, Anzahl der Pins: 6Pin(s), Produktpalette: Trench Series, Drain-Source-Durchgangswiderstand, n-Kanal: 1.02ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 380mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote PMDXB950UPELZ nach Preis ab 0.15 EUR bis 0.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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PMDXB950UPELZ | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 0.5A 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDXB950UPELZ | Nexperia |
MOSFETs PMDXB950UPEL/SOT1216/DFN1010B- |
auf Bestellung 17598 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDXB950UPELZ | NEXPERIA |
Description: NEXPERIA - PMDXB950UPELZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 500 mA, 500 mA, 1.02 ohmtariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.02ohm Verlustleistung, p-Kanal: 380mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: DFN1010B Anzahl der Pins: 6Pin(s) Produktpalette: Trench Series Drain-Source-Durchgangswiderstand, n-Kanal: 1.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 380mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 18975 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDXB950UPELZ | NEXPERIA |
Description: NEXPERIA - PMDXB950UPELZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 500 mA, 500 mA, 1.02 ohmtariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.02ohm Verlustleistung, p-Kanal: 380mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: DFN1010B Anzahl der Pins: 6Pin(s) Produktpalette: Trench Series Drain-Source-Durchgangswiderstand, n-Kanal: 1.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 380mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 18975 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDXB950UPELZ | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 0.5A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 24893 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMDXB950UPELZ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.2 EUR |
| 10000+ | 0.18 EUR |
| PMDXB950UPELZ |
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Hersteller: Nexperia
MOSFETs PMDXB950UPEL/SOT1216/DFN1010B-
MOSFETs PMDXB950UPEL/SOT1216/DFN1010B-
auf Bestellung 17598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.55 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| PMDXB950UPELZ |
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Hersteller: NEXPERIA
Description: NEXPERIA - PMDXB950UPELZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 500 mA, 500 mA, 1.02 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.02ohm
Verlustleistung, p-Kanal: 380mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: DFN1010B
Anzahl der Pins: 6Pin(s)
Produktpalette: Trench Series
Drain-Source-Durchgangswiderstand, n-Kanal: 1.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 380mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
Description: NEXPERIA - PMDXB950UPELZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 500 mA, 500 mA, 1.02 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.02ohm
Verlustleistung, p-Kanal: 380mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: DFN1010B
Anzahl der Pins: 6Pin(s)
Produktpalette: Trench Series
Drain-Source-Durchgangswiderstand, n-Kanal: 1.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 380mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 18975 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.57 EUR |
| 642+ | 0.33 EUR |
| 788+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
| 5000+ | 0.15 EUR |
| PMDXB950UPELZ |
![]() |
Hersteller: NEXPERIA
Description: NEXPERIA - PMDXB950UPELZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 500 mA, 500 mA, 1.02 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.02ohm
Verlustleistung, p-Kanal: 380mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: DFN1010B
Anzahl der Pins: 6Pin(s)
Produktpalette: Trench Series
Drain-Source-Durchgangswiderstand, n-Kanal: 1.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 380mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
Description: NEXPERIA - PMDXB950UPELZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 500 mA, 500 mA, 1.02 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.02ohm
Verlustleistung, p-Kanal: 380mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: DFN1010B
Anzahl der Pins: 6Pin(s)
Produktpalette: Trench Series
Drain-Source-Durchgangswiderstand, n-Kanal: 1.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 380mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 18975 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 302+ | 0.83 EUR |
| 409+ | 0.57 EUR |
| 642+ | 0.33 EUR |
| 788+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
| 5000+ | 0.15 EUR |
| PMDXB950UPELZ |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 24893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 36+ | 0.6 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.23 EUR |





