PMPB23XNEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 7A 6DFN
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
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Technische Details PMPB23XNEZ Nexperia USA Inc.
Description: MOSFET N-CH 20V 7A 6DFN, Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.7W (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote PMPB23XNEZ nach Preis ab 0.24 EUR bis 1.09 EUR
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PMPB23XNEZ | Hersteller : Nexperia |
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PMPB23XNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 7A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V |
auf Bestellung 5862 Stücke: Lieferzeit 10-14 Tag (e) |
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