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NX138AKR

NX138AKR Nexperia USA Inc.

NX138AK.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 325mW (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 4519284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7059+0.061 EUR
Mindestbestellmenge: 7059
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NX138AKR Nexperia USA Inc.

Description: MOSFET N-CH 60V 190MA TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 325mW (Ta), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote NX138AKR nach Preis ab 0.042 EUR bis 0.29 EUR

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NX138AKR NX138AKR Hersteller : Nexperia NX138AK.pdf MOSFETs SOT23 N-CH 60V .19A
auf Bestellung 196949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.29 EUR
17+0.17 EUR
50+0.13 EUR
100+0.11 EUR
3000+0.042 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
NX138AKR NX138AKR Hersteller : Nexperia USA Inc. NX138AK.pdf Description: MOSFET N-CH 60V 190MA TO236AB
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 325mW (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NX138AKR Hersteller : Nexperia NX138AK.pdf MOSFET N-CH 60V 190MA TO236AB Група товару: Транзистори Од. вим: шт
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NX138AKR NX138AKR Hersteller : Nexperia USA Inc. NX138AK.pdf Description: MOSFET N-CH 60V 190MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 325mW (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH