PMCM4401VNEAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
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Technische Details PMCM4401VNEAZ Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V, Power Dissipation (Max): 400mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V.
Weitere Produktangebote PMCM4401VNEAZ nach Preis ab 0.19 EUR bis 1.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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PMCM4401VNEAZ | Nexperia |
MOSFET PMCM4401VNE/NAX000/NONE |
auf Bestellung 21061 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCM4401VNEAZ | Nexperia USA Inc. |
Description: MOSFET N-CH 12V 4.7A 4WLCSP Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 4-WLCSP (0.78x0.78) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 85820 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMCM4401VNEAZ | NEXPERIA |
Description: NEXPERIA - PMCM4401VNEAZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1233000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PMCM4401VNEAZ |
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Hersteller: Nexperia
MOSFET PMCM4401VNE/NAX000/NONE
MOSFET PMCM4401VNE/NAX000/NONE
auf Bestellung 21061 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.82 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.36 EUR |
| 1000+ | 0.23 EUR |
| 2500+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 18000+ | 0.19 EUR |
| PMCM4401VNEAZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 85820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.25 EUR |
| PMCM4401VNEAZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PMCM4401VNEAZ - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: NEXPERIA - PMCM4401VNEAZ - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1233000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9000+ | 0.24 EUR |