PMV100XPEAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.4A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details PMV100XPEAR Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.4A TO236AB, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 463mW (Ta), 1.9W (Tc), Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMV100XPEAR nach Preis ab 0.088 EUR bis 0.69 EUR
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PMV100XPEAR | Hersteller : Nexperia |
MOSFETs PMV100XPEA/SOT23/TO-236AB |
auf Bestellung 6530 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV100XPEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.4A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V Power Dissipation (Max): 463mW (Ta), 1.9W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 5389 Stücke: Lieferzeit 10-14 Tag (e) |
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