Die Produkte nexperia usa inc.
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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BZX79-B3V6,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 400MW ALF2 Voltage - Zener (Nom) (Vz): 3.6 V Operating Temperature: -65°C ~ 200°C Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 90 Ohms |
auf Bestellung 8533 Stücke Lieferzeit 21-28 Tag (e) |
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BZX79-B5V1,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 400MW ALF2 Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
auf Bestellung 4143 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 140000 Stücke - Preis und Lieferfrist anzeigen
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BZX79-B10,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 10V 400MW ALF2 Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 200 nA @ 7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PMXB65UPEZ |
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Nexperia USA Inc. |
Description: MOSFET P-CH 12V 3.2A DFN1010D-3 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN1010D-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 317mW (Ta), 8.33W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 135000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 142804 Stücke - Preis und Lieferfrist anzeigen
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BSN20BKR |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236AB Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) FET Type: N-Channel |
auf Bestellung 5500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 35514 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236AB Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Package / Case: TO-236-3, SC-59, SOT-23-3 |
auf Bestellung 5560 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 35514 Stücke - Preis und Lieferfrist anzeigen
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NX7002BKMBYL |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 350MA DFN1006B-3 Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: DFN1006B-3 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 350mW (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 40000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 58771 Stücke - Preis und Lieferfrist anzeigen
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PMV40UN2R |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.7A TO236AB Base Part Number: PMV40UN2 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 490mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 44mOhm @ 3.7A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2515 Stücke - Preis und Lieferfrist anzeigen
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BZX84-B36,215 |
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Nexperia USA Inc. |
Description: DIODE ZENER 36V 250MW TO236AB Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Part Status: Active Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -65°C ~ 150°C |
auf Bestellung 191 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3623 Stücke - Preis und Lieferfrist anzeigen
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BZX84-B62,215 |
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Nexperia USA Inc. |
Description: DIODE ZENER 62V 250MW TO236AB Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Part Status: Active Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 215 Ohms Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Cut Tape (CT) |
auf Bestellung 2733 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 560 Stücke - Preis und Lieferfrist anzeigen
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PMEG050T150EPDZ |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 50V 15A CFP15 Base Part Number: PMEG050 Operating Temperature - Junction: 175°C (Max) Supplier Device Package: CFP15 Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Capacitance @ Vr, F: 800pF @ 10V, 1MHz Current - Reverse Leakage @ Vr: 100µA @ 50V Reverse Recovery Time (trr): 60ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. |
auf Bestellung 4500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6025 Stücke - Preis und Lieferfrist anzeigen
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BUK7880-55/CUF |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 3.5A SOT223 Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 8.3W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZT52H-B13,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 13V 375MW SOD123F Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Nexperia USA Inc. Voltage - Zener (Nom) (Vz): 13V Tolerance: ±2% Power - Max: 375mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100nA @ 8V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Base Part Number: BZT52H-B13 |
auf Bestellung 1295 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 20536 Stücke - Preis und Lieferfrist anzeigen
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1N4732A,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 1W DO41 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
auf Bestellung 15118 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 110000 Stücke - Preis und Lieferfrist anzeigen
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1N4732A,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 1W DO41 Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 |
auf Bestellung 2328 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33850 Stücke - Preis und Lieferfrist anzeigen
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BZV85-C16,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 16V 1W DO41 Current - Reverse Leakage @ Vr: 50 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Part Status: Active Power - Max: 1 W Supplier Device Package: DO-41 Impedance (Max) (Zzt): 15 Ohms Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) Voltage - Zener (Nom) (Vz): 16 V Operating Temperature: 200°C Mounting Type: Through Hole |
auf Bestellung 1188 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2141 Stücke - Preis und Lieferfrist anzeigen
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BZV85-C5V1,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 1W DO41 Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 3 µA @ 2 V Tolerance: ±5% Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Power - Max: 1 W Packaging: Cut Tape (CT) |
auf Bestellung 1103 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 48075 Stücke - Preis und Lieferfrist anzeigen
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1N4746A,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 18V 1W DO41 Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Tolerance: ±5% Packaging: Cut Tape (CT) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V |
auf Bestellung 803 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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BZV85-C27,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 27V 1W DO41 Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 19 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 111405 Stücke - Preis und Lieferfrist anzeigen
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1N4737A,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 1W DO41 Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 5 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 4 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 200°C |
auf Bestellung 870 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 202500 Stücke - Preis und Lieferfrist anzeigen
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1N4737A,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 1W DO41 Impedance (Max) (Zzt): 4 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5 V Power - Max: 1 W Supplier Device Package: DO-41 Part Status: Active Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial |
auf Bestellung 2157 Stücke Lieferzeit 21-28 Tag (e) |
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BZV85-C5V6,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 1W DO41 Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 2 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA |
auf Bestellung 202 Stücke Lieferzeit 21-28 Tag (e) |
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BZV85-C18,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 18V 1W DO41 Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 12.5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA |
auf Bestellung 30 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 17390 Stücke - Preis und Lieferfrist anzeigen
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.jpg "RB520S30YL") |
RB520S30YL |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 30V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 20pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZX84J-B27,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 27V 550MW SOD323F Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 550 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2% |
auf Bestellung 27 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 80 Stücke - Preis und Lieferfrist anzeigen
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PMEG045T150EPDAZ |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 15A CFP15 Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: 800pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 109775 Stücke - Preis und Lieferfrist anzeigen
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BZX84W-C4V7X |
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Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 275MW SOT323 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 4.7V Tolerance: ±5% Power - Max: 275mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 3µA @ 10mA Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Manufacturer: Nexperia USA Inc. Base Part Number: BZX84W-C4V7 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZX585-B13,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 13V 300MW SOD523 Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
auf Bestellung 2989 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5881 Stücke - Preis und Lieferfrist anzeigen
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BZX84J-B36,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 36V 550MW SOD323F Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 550 mW Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZX585-B9V1,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 300MW SOD523 Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-523 Impedance (Max) (Zzt): 10 Ohms |
auf Bestellung 3268 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 106064 Stücke - Preis und Lieferfrist anzeigen
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74HCT245DB,118 |
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Nexperia USA Inc. |
Description: IC TXRX NON-INVERT 5.5V 20SSOP Base Part Number: 74HCT245 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 20-SSOP Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 6mA, 6mA Output Type: 3-State Number of Bits per Element: 8 Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Part Status: Active |
auf Bestellung 1423 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8401 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: IC TXRX NON-INVERT 5.5V 20SSOP Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SSOP (0.209", 5.30mm Width) Packaging: Cut Tape (CT) Part Status: Obsolete Supplier Device Package: 20-SSOP Current - Output High, Low: 6mA, 6mA Number of Bits per Element: 8 |
auf Bestellung 402 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8401 Stücke - Preis und Lieferfrist anzeigen
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74HCT245D,652 |
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Nexperia USA Inc. |
Description: IC TXRX NON-INVERT 5.5V 20SO Supplier Device Package: 20-SO Current - Output High, Low: 6mA, 6mA Number of Bits per Element: 8 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Part Status: Obsolete Output Type: 3-State Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube |
auf Bestellung 18 Stücke Lieferzeit 21-28 Tag (e) |
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74HCT245D,653 |
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Nexperia USA Inc. |
Description: IC TRANSCVR NON-INVERT 5.5V 20SO Number of Bits per Element: 8 Base Part Number: 74HCT245 Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 20-SO Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 6mA, 6mA Output Type: 3-State |
auf Bestellung 5448 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 202 Stücke - Preis und Lieferfrist anzeigen
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PSMN4R0-60YS,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 74A LFPAK56 Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 3501 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZV90-C11,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 11V 1.5W SOT223 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Power - Max: 1.5 W Part Status: Active Supplier Device Package: SOT-223 Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Tolerance: ±5% |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2699 Stücke - Preis und Lieferfrist anzeigen
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BZX79-C3V6,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 400MW ALF2 Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 6674 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2650 Stücke - Preis und Lieferfrist anzeigen
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BZX79-C30,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 30V 400MW ALF2 Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 700 mV Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole |
auf Bestellung 1518 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 87800 Stücke - Preis und Lieferfrist anzeigen
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PESD24VF1BLYL |
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Nexperia USA Inc. |
Description: TVS DIODE 24VWM 17VC DFN1006-2 Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 24.5V Bidirectional Channels: 1 Supplier Device Package: DFN1006-2 Voltage - Reverse Standoff (Typ): 24V (Max) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Capacitance @ Frequency: 0.3pF @ 1MHz Applications: Automotive Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: SOD-882 |
auf Bestellung 86583 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 80000 Stücke - Preis und Lieferfrist anzeigen
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SOT89.jpg "PBSS4350X,115") |
PBSS4350X,115 |
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Nexperia USA Inc. |
Description: TRANS NPN 50V 3A SOT89 Current - Collector (Ic) (Max): 3A Transistor Type: NPN Base Part Number: PBSS4350 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: SOT-89 Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Frequency - Transition: 100MHz Power - Max: 1.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Voltage - Collector Emitter Breakdown (Max): 50V |
auf Bestellung 3494 Stücke Lieferzeit 21-28 Tag (e) |
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.jpg "BZV55-C11,135") |
BZV55-C11,135 |
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Nexperia USA Inc. |
Description: DIODE ZENER 11V 500MW SOD80C Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Supplier Device Package: LLDS; MiniMelf Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Current - Reverse Leakage @ Vr: 100nA @ 8V Impedance (Max) (Zzt): 20 Ohms Power - Max: 500mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 11V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 7250 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2464 Stücke - Preis und Lieferfrist anzeigen
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1PS79SB30,135 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 200MA SOD523 Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 20pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max) Base Part Number: 1PS79SB30 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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74AHCT1G14GV,125 |
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Nexperia USA Inc. |
Description: IC INVERTER SCHMITT 1CH 5TSOP Logic Type: Inverter Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: 74AHCT1G14 Package / Case: SC-74A, SOT-753 Supplier Device Package: SC-74A Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Logic Level - High: 2V Logic Level - Low: 0.5V ~ 0.6V Current - Output High, Low: 8mA, 8mA Current - Quiescent (Max): 1µA Voltage - Supply: 4.5V ~ 5.5V Features: Schmitt Trigger Number of Inputs: 1 Number of Circuits: 1 |
auf Bestellung 21086 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
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74HC4052D-Q100,118 |
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Nexperia USA Inc. |
Description: IC MUX/DEMUX DUAL 4CH 16SOIC Switch Circuit: SP4T Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: 74HC4052 Supplier Device Package: 16-SO Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Crosstalk: -60dB @ 1MHz Current - Leakage (IS(off)) (Max): 2µA Channel Capacitance (CS(off), CD(off)): 3.5pF -3db Bandwidth: 180MHz Switch Time (Ton, Toff) (Max): 58ns, 48ns Voltage - Supply, Dual (V±): ±1.5V ~ 5V Voltage - Supply, Single (V+): 2V ~ 10V Channel-to-Channel Matching (ΔRon): 6Ohm On-State Resistance (Max): 150Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 4:1 |
auf Bestellung 1899 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2083 Stücke - Preis und Lieferfrist anzeigen
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PUSB2X4YH |
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Nexperia USA Inc. |
Description: TVS DIODE 3.8VC 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.7pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Supplier Device Package: 6-TSSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 3.8V (Typ) Power Line Protection: Yes Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2710 Stücke - Preis und Lieferfrist anzeigen
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74HC4052D,653 |
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Nexperia USA Inc. |
Description: IC MUX/DEMUX DUAL 4X1 16SOIC Crosstalk: -60dB @ 1MHz Current - Leakage (IS(off)) (Max): 2µA Channel Capacitance (CS(off), CD(off)): 3.5pF -3db Bandwidth: 180MHz Switch Time (Ton, Toff) (Max): 58ns, 48ns Voltage - Supply, Dual (V±): ±1.5V ~ 5V Voltage - Supply, Single (V+): 2V ~ 10V Channel-to-Channel Matching (ΔRon): 6Ohm On-State Resistance (Max): 150Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Base Part Number: 74HC4052 Supplier Device Package: 16-SO Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Part Status: Active Operating Temperature: -40°C ~ 125°C (TA) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 20037 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 108407 Stücke - Preis und Lieferfrist anzeigen
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BUK78150-55A/CUX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 5.5A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1654 Stücke - Preis und Lieferfrist anzeigen
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BUK98180-100A/CUX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 4.6A SOT223 Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
auf Bestellung 35000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 17545 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: MOSFET N-CH 100V 4.6A SOT223 Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V |
auf Bestellung 35603 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 17545 Stücke - Preis und Lieferfrist anzeigen
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PSMN6R1-25MLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 60A LFPAK33 Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 42W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 603 Stücke - Preis und Lieferfrist anzeigen
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PSMN6R0-25YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V Power Dissipation (Max): 43W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN6R5-30MLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 65A LFPAK33 Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN5R3-25MLDX |
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Nexperia USA Inc. |
Description: PSMN5R3-25MLD/MLFPAK/REEL 7 Q Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 51W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7633 Stücke - Preis und Lieferfrist anzeigen
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PSMN5R4-25YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 70A LFPAK56 Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V Power Dissipation (Max): 47W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1621 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: MOSFET N-CH 25V 70A LFPAK56 Power Dissipation (Max): 47W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA |
auf Bestellung 150 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1621 Stücke - Preis und Lieferfrist anzeigen
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PSMN3R5-25MLDX |
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Nexperia USA Inc. |
Description: PSMN3R5-25MLD/MLFPAK/REEL 7 Q Input Capacitance (Ciss) (Max) @ Vds: 1334 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 65W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 3.72mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN2R0-25MLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 70A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 74W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK33 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 51 Stücke - Preis und Lieferfrist anzeigen
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PSMN2R0-25YLDX |
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Nexperia USA Inc. |
Description: PSMN2R0-25YLD/LFPAK/REEL 7 Q1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 115W (Tc) FET Feature: Schottky Diode (Body) Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Packaging: Tape & Reel (TR) Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3218 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: PSMN2R0-25YLD/LFPAK/REEL 7 Q1 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 115W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Supplier Device Package: LFPAK56, Power-SO8 |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3218 Stücke - Preis und Lieferfrist anzeigen
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PSMN1R7-25YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 135W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2671 Stücke - Preis und Lieferfrist anzeigen
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PSMN1R2-25YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 60.3 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 172W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN1R0-25YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Power Dissipation (Max): 160W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 694 Stücke - Preis und Lieferfrist anzeigen
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PSMN0R9-25YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 300A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 6721 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 89.8 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 25A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1329 Stücke - Preis und Lieferfrist anzeigen
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PUSB3FR4Z |
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Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 3VC DFN2510A-10 Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 3V (Typ) Voltage - Breakdown (Min): 5.5V Unidirectional Channels: 4 Supplier Device Package: DFN2510A-10 Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Applications: HDMI Operating Temperature: -40°C ~ 85°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 10-XFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 75433 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 65043 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 3VC DFN2510A-10 Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 3V (Typ) Voltage - Breakdown (Min): 5.5V Unidirectional Channels: 4 Supplier Device Package: DFN2510A-10 Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Applications: HDMI Operating Temperature: -40°C ~ 85°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 10-XFDFN Packaging: Cut Tape (CT) |
auf Bestellung 75433 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 65043 Stücke - Preis und Lieferfrist anzeigen
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PSMN0R7-25YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 12V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 110.2nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Supplier Device Package: LFPAK56, Power-SO8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 158W (Tc) |
auf Bestellung 4500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5114 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: MOSFET N-CH 25V LFPAK56 Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 110.2nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Package / Case: SOT-1023, 4-LFPAK Supplier Device Package: LFPAK56, Power-SO8 Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 158W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 12V |
auf Bestellung 5114 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5114 Stücke - Preis und Lieferfrist anzeigen
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| BZX84-B51/DG/B2,21 |
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Nexperia USA Inc. |
Description: DIODE ZENER 51V 250MW TO236AB Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 51V Tolerance: ±2% Power - Max: 250mW Impedance (Max) (Zzt): 180 Ohms Current - Reverse Leakage @ Vr: 50nA @ 35.7V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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PESD12VS1UA/ZLX |
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Nexperia USA Inc. |
Description: TVS DIODE 12VWM 27VC SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Automotive Capacitance @ Frequency: 160pF @ 1MHz Current - Peak Pulse (10/1000µs): 22.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK98150-55A/CUF |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 5.5A SOT223 Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16997 Stücke - Preis und Lieferfrist anzeigen
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PMZ290UNE2YL |
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Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1.2A DFN1006-3 Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 45208 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1.2A DFN1006-3 Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) Packaging: Cut Tape (CT) |
auf Bestellung 8619 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 45208 Stücke - Preis und Lieferfrist anzeigen
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PSMN2R0-30YLDX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2969 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2250 Stücke - Preis und Lieferfrist anzeigen
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PSMN7R8-100PSEQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A TO220AB Packaging: Tube Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN4R8-100PSEQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 405W (Tc) Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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NX138BKR |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236AB Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 310mW (Ta) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8160 Stücke - Preis und Lieferfrist anzeigen
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NX7002BKWX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 270MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10780 Stücke - Preis und Lieferfrist anzeigen
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NX7002BKR |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 270MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 29415 Stücke - Preis und Lieferfrist anzeigen
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PMF250XNEX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1A SOT323 Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 342mW (Ta) Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6868 Stücke - Preis und Lieferfrist anzeigen
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NX7002BKSX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 270MA 6TSSOP Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 742 Stücke - Preis und Lieferfrist anzeigen
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PMV65UNER |
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Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.8A TO236AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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|
PMV42ENER |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.4A TO236AB Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 500mW (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5201 Stücke - Preis und Lieferfrist anzeigen
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|
PMF63UNEX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.2A SOT323 Power Dissipation (Max): 395mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7062 Stücke - Preis und Lieferfrist anzeigen
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| BZX79-B3V6,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 400MW ALF2
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
auf Bestellung 8533 Stücke Description: DIODE ZENER 3.6V 400MW ALF2
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Lieferzeit 21-28 Tag (e)
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| BZX79-B5V1,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 4143 Stücke Description: DIODE ZENER 5.1V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 140000 Stücke - Preis und Lieferfrist anzeigen
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| BZX79-B10,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 400MW ALF2
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 10V 400MW ALF2
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
| PMXB65UPEZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 12V 3.2A DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 135000 Stücke Description: MOSFET P-CH 12V 3.2A DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 142804 Stücke - Preis und Lieferfrist anzeigen
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| BSN20BKR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
auf Bestellung 5500 Stücke Description: MOSFET N-CH 60V 265MA TO236AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 41074 Stücke - Preis und Lieferfrist anzeigen
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| BSN20BKR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 5560 Stücke Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Lieferzeit 21-28 Tag (e)
auf Bestellung 41014 Stücke - Preis und Lieferfrist anzeigen
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| NX7002BKMBYL |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 350MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 350mW (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke Description: MOSFET N-CH 60V 350MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 350mW (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 58771 Stücke - Preis und Lieferfrist anzeigen
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| PMV40UN2R |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.7A TO236AB
Base Part Number: PMV40UN2
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 490mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 3.7A TO236AB
Base Part Number: PMV40UN2
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 490mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
auf Bestellung 2515 Stücke - Preis und Lieferfrist anzeigen
| BZX84-B36,215 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 36V 250MW TO236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
auf Bestellung 191 Stücke Description: DIODE ZENER 36V 250MW TO236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Lieferzeit 21-28 Tag (e)
auf Bestellung 3623 Stücke - Preis und Lieferfrist anzeigen
| BZX84-B62,215 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 62V 250MW TO236AB
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 215 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2733 Stücke Description: DIODE ZENER 62V 250MW TO236AB
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 215 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 560 Stücke - Preis und Lieferfrist anzeigen
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| PMEG050T150EPDZ |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15
Base Part Number: PMEG050
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 50V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
auf Bestellung 4500 Stücke Description: DIODE SCHOTTKY 50V 15A CFP15
Base Part Number: PMEG050
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 50V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Lieferzeit 21-28 Tag (e)
auf Bestellung 6025 Stücke - Preis und Lieferfrist anzeigen
| BUK7880-55/CUF |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 3.5A SOT223
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
| BZT52H-B13,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 375MW SOD123F
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Voltage - Zener (Nom) (Vz): 13V
Tolerance: ±2%
Power - Max: 375mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Base Part Number: BZT52H-B13
auf Bestellung 1295 Stücke Description: DIODE ZENER 13V 375MW SOD123F
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Voltage - Zener (Nom) (Vz): 13V
Tolerance: ±2%
Power - Max: 375mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Base Part Number: BZT52H-B13
Lieferzeit 21-28 Tag (e)
auf Bestellung 20536 Stücke - Preis und Lieferfrist anzeigen
| 1N4732A,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 15118 Stücke Description: DIODE ZENER 4.7V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 110000 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4732A,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 1W DO41
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
auf Bestellung 2328 Stücke Description: DIODE ZENER 4.7V 1W DO41
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Lieferzeit 21-28 Tag (e)
auf Bestellung 33850 Stücke - Preis und Lieferfrist anzeigen
|
| BZV85-C16,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 1W DO41
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Part Status: Active
Power - Max: 1 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 15 Ohms
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 200°C
Mounting Type: Through Hole
auf Bestellung 1188 Stücke Description: DIODE ZENER 16V 1W DO41
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Part Status: Active
Power - Max: 1 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 15 Ohms
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 2141 Stücke - Preis und Lieferfrist anzeigen
|
| BZV85-C5V1,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 1W DO41
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Tolerance: ±5%
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1 W
Packaging: Cut Tape (CT)
auf Bestellung 1103 Stücke Description: DIODE ZENER 5.1V 1W DO41
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Tolerance: ±5%
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1 W
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 48075 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4746A,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
auf Bestellung 803 Stücke Description: DIODE ZENER 18V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| BZV85-C27,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
auf Bestellung 2 Stücke Description: DIODE ZENER 27V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 111405 Stücke - Preis und Lieferfrist anzeigen
| 1N4737A,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 1W DO41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C
auf Bestellung 870 Stücke Description: DIODE ZENER 7.5V 1W DO41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C
Lieferzeit 21-28 Tag (e)
auf Bestellung 202500 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4737A,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 1W DO41
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Power - Max: 1 W
Supplier Device Package: DO-41
Part Status: Active
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
auf Bestellung 2157 Stücke Description: DIODE ZENER 7.5V 1W DO41
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Power - Max: 1 W
Supplier Device Package: DO-41
Part Status: Active
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Lieferzeit 21-28 Tag (e)
|
| BZV85-C5V6,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
auf Bestellung 202 Stücke Description: DIODE ZENER 5.6V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Lieferzeit 21-28 Tag (e)
|
| BZV85-C18,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 12.5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
auf Bestellung 30 Stücke Description: DIODE ZENER 18V 1W DO41
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 12.5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 17390 Stücke - Preis und Lieferfrist anzeigen
|
| RB520S30YL |
|
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
| BZX84J-B27,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 550MW SOD323F
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
auf Bestellung 27 Stücke Description: DIODE ZENER 27V 550MW SOD323F
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Lieferzeit 21-28 Tag (e)
auf Bestellung 80 Stücke - Preis und Lieferfrist anzeigen
| PMEG045T150EPDAZ |
|
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 15A CFP15
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 15A CFP15
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
auf Bestellung 109775 Stücke - Preis und Lieferfrist anzeigen
| BZX84W-C4V7X |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 275MW SOT323
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 275mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 10mA
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Manufacturer: Nexperia USA Inc.
Base Part Number: BZX84W-C4V7
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 4.7V 275MW SOT323
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 275mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 10mA
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Manufacturer: Nexperia USA Inc.
Base Part Number: BZX84W-C4V7
| BZX585-B13,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 2989 Stücke Description: DIODE ZENER 13V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5881 Stücke - Preis und Lieferfrist anzeigen
|
| BZX84J-B36,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 36V 550MW SOD323F
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 36V 550MW SOD323F
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
| BZX585-B9V1,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 300MW SOD523
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
auf Bestellung 3268 Stücke Description: DIODE ZENER 9.1V 300MW SOD523
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
Lieferzeit 21-28 Tag (e)
auf Bestellung 106064 Stücke - Preis und Lieferfrist anzeigen
| 74HCT245DB,118 |
|
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 5.5V 20SSOP
Base Part Number: 74HCT245
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 20-SSOP
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Part Status: Active
auf Bestellung 1423 Stücke Description: IC TXRX NON-INVERT 5.5V 20SSOP
Base Part Number: 74HCT245
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 20-SSOP
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 8803 Stücke - Preis und Lieferfrist anzeigen
| 74HCT245DB,118 |
|
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 5.5V 20SSOP
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 8
auf Bestellung 402 Stücke Description: IC TXRX NON-INVERT 5.5V 20SSOP
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 8
Lieferzeit 21-28 Tag (e)
auf Bestellung 9824 Stücke - Preis und Lieferfrist anzeigen
|
| 74HCT245D,652 |
|
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 5.5V 20SO
Supplier Device Package: 20-SO
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Part Status: Obsolete
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 18 Stücke Description: IC TXRX NON-INVERT 5.5V 20SO
Supplier Device Package: 20-SO
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Part Status: Obsolete
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Lieferzeit 21-28 Tag (e)
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| 74HCT245D,653 |
|
Hersteller: Nexperia USA Inc.
Description: IC TRANSCVR NON-INVERT 5.5V 20SO
Number of Bits per Element: 8
Base Part Number: 74HCT245
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
auf Bestellung 5448 Stücke Description: IC TRANSCVR NON-INVERT 5.5V 20SO
Number of Bits per Element: 8
Base Part Number: 74HCT245
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Lieferzeit 21-28 Tag (e)
auf Bestellung 202 Stücke - Preis und Lieferfrist anzeigen
| PSMN4R0-60YS,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 74A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 3501 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 74A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 3501 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
| BZV90-C11,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 1.5W SOT223
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 11V 1.5W SOT223
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
auf Bestellung 2699 Stücke - Preis und Lieferfrist anzeigen
| BZX79-C3V6,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 400MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 6674 Stücke Description: DIODE ZENER 3.6V 400MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2650 Stücke - Preis und Lieferfrist anzeigen
|
| BZX79-C30,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 400MW ALF2
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
auf Bestellung 1518 Stücke Description: DIODE ZENER 30V 400MW ALF2
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 87800 Stücke - Preis und Lieferfrist anzeigen
|
| PESD24VF1BLYL |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DFN1006-2
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 24.5V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SOD-882
auf Bestellung 86583 Stücke Description: TVS DIODE 24VWM 17VC DFN1006-2
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 24.5V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Lieferzeit 21-28 Tag (e)
auf Bestellung 80000 Stücke - Preis und Lieferfrist anzeigen
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| PBSS4350X,115 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 50V 3A SOT89
Current - Collector (Ic) (Max): 3A
Transistor Type: NPN
Base Part Number: PBSS4350
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-89
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 100MHz
Power - Max: 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 3494 Stücke Description: TRANS NPN 50V 3A SOT89
Current - Collector (Ic) (Max): 3A
Transistor Type: NPN
Base Part Number: PBSS4350
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-89
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 100MHz
Power - Max: 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Lieferzeit 21-28 Tag (e)
| BZV55-C11,135 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 500MW SOD80C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Supplier Device Package: LLDS; MiniMelf
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 11V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 7250 Stücke Description: DIODE ZENER 11V 500MW SOD80C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Supplier Device Package: LLDS; MiniMelf
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 11V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2464 Stücke - Preis und Lieferfrist anzeigen
| 1PS79SB30,135 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 200MA SOD523
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Base Part Number: 1PS79SB30
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 200MA SOD523
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Base Part Number: 1PS79SB30
| 74AHCT1G14GV,125 |
|
Hersteller: Nexperia USA Inc.
Description: IC INVERTER SCHMITT 1CH 5TSOP
Logic Type: Inverter
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: 74AHCT1G14
Package / Case: SC-74A, SOT-753
Supplier Device Package: SC-74A
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.5V ~ 0.6V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 1µA
Voltage - Supply: 4.5V ~ 5.5V
Features: Schmitt Trigger
Number of Inputs: 1
Number of Circuits: 1
auf Bestellung 21086 Stücke Description: IC INVERTER SCHMITT 1CH 5TSOP
Logic Type: Inverter
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: 74AHCT1G14
Package / Case: SC-74A, SOT-753
Supplier Device Package: SC-74A
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.5V ~ 0.6V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 1µA
Voltage - Supply: 4.5V ~ 5.5V
Features: Schmitt Trigger
Number of Inputs: 1
Number of Circuits: 1
Lieferzeit 21-28 Tag (e)
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
| 74HC4052D-Q100,118 |
|
Hersteller: Nexperia USA Inc.
Description: IC MUX/DEMUX DUAL 4CH 16SOIC
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: 74HC4052
Supplier Device Package: 16-SO
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -60dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2µA
Channel Capacitance (CS(off), CD(off)): 3.5pF
-3db Bandwidth: 180MHz
Switch Time (Ton, Toff) (Max): 58ns, 48ns
Voltage - Supply, Dual (V±): ±1.5V ~ 5V
Voltage - Supply, Single (V+): 2V ~ 10V
Channel-to-Channel Matching (ΔRon): 6Ohm
On-State Resistance (Max): 150Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
auf Bestellung 1899 Stücke Description: IC MUX/DEMUX DUAL 4CH 16SOIC
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: 74HC4052
Supplier Device Package: 16-SO
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -60dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2µA
Channel Capacitance (CS(off), CD(off)): 3.5pF
-3db Bandwidth: 180MHz
Switch Time (Ton, Toff) (Max): 58ns, 48ns
Voltage - Supply, Dual (V±): ±1.5V ~ 5V
Voltage - Supply, Single (V+): 2V ~ 10V
Channel-to-Channel Matching (ΔRon): 6Ohm
On-State Resistance (Max): 150Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Lieferzeit 21-28 Tag (e)
auf Bestellung 2083 Stücke - Preis und Lieferfrist anzeigen
| PUSB2X4YH |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 3.8VC 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
auf Bestellung 2710 Stücke - Preis und Lieferfrist anzeigen
| 74HC4052D,653 |
|
Hersteller: Nexperia USA Inc.
Description: IC MUX/DEMUX DUAL 4X1 16SOIC
Crosstalk: -60dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2µA
Channel Capacitance (CS(off), CD(off)): 3.5pF
-3db Bandwidth: 180MHz
Switch Time (Ton, Toff) (Max): 58ns, 48ns
Voltage - Supply, Dual (V±): ±1.5V ~ 5V
Voltage - Supply, Single (V+): 2V ~ 10V
Channel-to-Channel Matching (ΔRon): 6Ohm
On-State Resistance (Max): 150Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Base Part Number: 74HC4052
Supplier Device Package: 16-SO
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 20037 Stücke Description: IC MUX/DEMUX DUAL 4X1 16SOIC
Crosstalk: -60dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2µA
Channel Capacitance (CS(off), CD(off)): 3.5pF
-3db Bandwidth: 180MHz
Switch Time (Ton, Toff) (Max): 58ns, 48ns
Voltage - Supply, Dual (V±): ±1.5V ~ 5V
Voltage - Supply, Single (V+): 2V ~ 10V
Channel-to-Channel Matching (ΔRon): 6Ohm
On-State Resistance (Max): 150Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Base Part Number: 74HC4052
Supplier Device Package: 16-SO
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 108407 Stücke - Preis und Lieferfrist anzeigen
| BUK78150-55A/CUX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 5.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 1654 Stücke - Preis und Lieferfrist anzeigen
| BUK98180-100A/CUX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 4.6A SOT223
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 35000 Stücke Description: MOSFET N-CH 100V 4.6A SOT223
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 53148 Stücke - Preis und Lieferfrist anzeigen
| BUK98180-100A/CUX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 4.6A SOT223
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
auf Bestellung 35603 Stücke Description: MOSFET N-CH 100V 4.6A SOT223
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 52545 Stücke - Preis und Lieferfrist anzeigen
| PSMN6R1-25MLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 60A LFPAK33
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 42W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 60A LFPAK33
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 42W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
auf Bestellung 603 Stücke - Preis und Lieferfrist anzeigen
| PSMN6R0-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 61A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 61A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
| PSMN6R5-30MLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 65A LFPAK33
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 65A LFPAK33
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
| PSMN5R3-25MLDX |
|
Hersteller: Nexperia USA Inc.
Description: PSMN5R3-25MLD/MLFPAK/REEL 7 Q
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 51W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PSMN5R3-25MLD/MLFPAK/REEL 7 Q
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 51W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 7633 Stücke - Preis und Lieferfrist anzeigen
| PSMN5R4-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
Power Dissipation (Max): 47W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 70A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
Power Dissipation (Max): 47W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
auf Bestellung 1771 Stücke - Preis und Lieferfrist anzeigen
| PSMN5R4-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK56
Power Dissipation (Max): 47W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
auf Bestellung 150 Stücke Description: MOSFET N-CH 25V 70A LFPAK56
Power Dissipation (Max): 47W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 1621 Stücke - Preis und Lieferfrist anzeigen
|
| PSMN3R5-25MLDX |
|
Hersteller: Nexperia USA Inc.
Description: PSMN3R5-25MLD/MLFPAK/REEL 7 Q
Input Capacitance (Ciss) (Max) @ Vds: 1334 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 65W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.72mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PSMN3R5-25MLD/MLFPAK/REEL 7 Q
Input Capacitance (Ciss) (Max) @ Vds: 1334 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 65W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.72mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
| PSMN2R0-25MLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 74W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 70A LFPAK33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 74W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
auf Bestellung 51 Stücke - Preis und Lieferfrist anzeigen
| PSMN2R0-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: PSMN2R0-25YLD/LFPAK/REEL 7 Q1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V
Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PSMN2R0-25YLD/LFPAK/REEL 7 Q1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V
Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
auf Bestellung 3219 Stücke - Preis und Lieferfrist anzeigen
| PSMN2R0-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: PSMN2R0-25YLD/LFPAK/REEL 7 Q1
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Supplier Device Package: LFPAK56, Power-SO8
auf Bestellung 1 Stücke Description: PSMN2R0-25YLD/LFPAK/REEL 7 Q1
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Supplier Device Package: LFPAK56, Power-SO8
Lieferzeit 21-28 Tag (e)
auf Bestellung 3218 Stücke - Preis und Lieferfrist anzeigen
| PSMN1R7-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 135W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 135W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 2671 Stücke - Preis und Lieferfrist anzeigen
| PSMN1R2-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 60.3 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 172W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 100A LFPAK56
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 60.3 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 172W (Tc)
| PSMN1R0-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Power Dissipation (Max): 160W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 100A LFPAK56
Power Dissipation (Max): 160W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
auf Bestellung 694 Stücke - Preis und Lieferfrist anzeigen
| PSMN0R9-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6721 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 89.8 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 25A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6721 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 89.8 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 25A, 10V
auf Bestellung 1329 Stücke - Preis und Lieferfrist anzeigen
| PUSB3FR4Z |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 3VC DFN2510A-10
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 3V (Typ)
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 75433 Stücke Description: TVS DIODE 3.3VWM 3VC DFN2510A-10
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 3V (Typ)
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 140476 Stücke - Preis und Lieferfrist anzeigen
| PUSB3FR4Z |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 3VC DFN2510A-10
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 3V (Typ)
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 75433 Stücke Description: TVS DIODE 3.3VWM 3VC DFN2510A-10
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 3V (Typ)
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 140476 Stücke - Preis und Lieferfrist anzeigen
| PSMN0R7-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 158W (Tc)
auf Bestellung 4500 Stücke Description: MOSFET N-CH 25V LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 158W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 10228 Stücke - Preis und Lieferfrist anzeigen
| PSMN0R7-25YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V LFPAK56
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 158W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 12V
auf Bestellung 5114 Stücke Description: MOSFET N-CH 25V LFPAK56
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 158W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 12V
Lieferzeit 21-28 Tag (e)
auf Bestellung 9614 Stücke - Preis und Lieferfrist anzeigen
| BZX84-B51/DG/B2,21 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 51V 250MW TO236AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±2%
Power - Max: 250mW
Impedance (Max) (Zzt): 180 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 35.7V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 51V 250MW TO236AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±2%
Power - Max: 250mW
Impedance (Max) (Zzt): 180 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 35.7V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
| PESD12VS1UA/ZLX |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 12VWM 27VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 22.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 12VWM 27VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 22.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
| BUK98150-55A/CUF |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 5.5A SOT223
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 16997 Stücke - Preis und Lieferfrist anzeigen
| PMZ290UNE2YL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.2A DFN1006-3
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 1.2A DFN1006-3
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
auf Bestellung 53827 Stücke - Preis und Lieferfrist anzeigen
| PMZ290UNE2YL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.2A DFN1006-3
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Packaging: Cut Tape (CT)
auf Bestellung 8619 Stücke Description: MOSFET N-CH 20V 1.2A DFN1006-3
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 45208 Stücke - Preis und Lieferfrist anzeigen
|
| PSMN2R0-30YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2969 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2969 pF @ 15 V
auf Bestellung 2250 Stücke - Preis und Lieferfrist anzeigen
| PSMN7R8-100PSEQ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A TO220AB
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 100A TO220AB
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
| PSMN4R8-100PSEQ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
| NX138BKR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 310mW (Ta)
auf Bestellung 6000 Stücke Description: MOSFET N-CH 60V 265MA TO236AB
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8160 Stücke - Preis und Lieferfrist anzeigen
|
| NX7002BKWX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 270MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 10780 Stücke - Preis und Lieferfrist anzeigen
| NX7002BKR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 270MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 29415 Stücke - Preis und Lieferfrist anzeigen
| PMF250XNEX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 342mW (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 1A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 342mW (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 6868 Stücke - Preis und Lieferfrist anzeigen
| NX7002BKSX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA 6TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 270MA 6TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 742 Stücke - Preis und Lieferfrist anzeigen
| PMV65UNER |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
| PMV42ENER |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 4.4A TO236AB
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 5201 Stücke - Preis und Lieferfrist anzeigen
| PMF63UNEX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.2A SOT323
Power Dissipation (Max): 395mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2.2A SOT323
Power Dissipation (Max): 395mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 7062 Stücke - Preis und Lieferfrist anzeigen
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