auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.09 EUR |
| 100+ | 1.07 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.91 EUR |
| 1500+ | 0.78 EUR |
| 3000+ | 0.76 EUR |
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Technische Details BUK9K30-80EX Nexperia
Description: MOSFET 2N-CH 80V 17A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 53W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V, Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9K30-80EX nach Preis ab 1.09 EUR bis 1.09 EUR
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BUK9K30-80EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 80V 17A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 925 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K30-80EX | Hersteller : NEXPERIA |
BUK9K30-80EX Multi channel transistors |
Produkt ist nicht verfügbar |
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BUK9K30-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 80V 17A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |