BUK9K30-80EX Nexperia
| Anzahl | Preis |
|---|---|
| 1+ | 3.45 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 0.94 EUR |
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Technische Details BUK9K30-80EX Nexperia
Description: MOSFET 2N-CH 80V 17A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 53W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V, Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9K30-80EX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BUK9K30-80EX | Nexperia USA Inc. |
 Description: MOSFET 2N-CH 80V 17A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BUK9K30-80EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 80V 17A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 17A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)