BUK9K30-80EX Nexperia
| Anzahl | Preis |
|---|---|
| 1+ | 3.45 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 0.94 EUR |
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Technische Details BUK9K30-80EX Nexperia
Description: MOSFET 2N-CH 80V 17A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 53W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V, Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9K30-80EX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK9K30-80EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 80V 17A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K30-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 17A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK9K30-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 80V 17A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9K30-80EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 68A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 75mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |