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BZT52-C3V6X BZT52-C3V6X Nexperia USA Inc. BZT52_SER.pdf Description: DIODE ZENER 3.6V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52-C3V6X BZT52-C3V6X Nexperia USA Inc. BZT52_SER.pdf Description: DIODE ZENER 3.6V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
115+0.15 EUR
187+0.095 EUR
500+0.069 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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BAS116H,115 BAS116H,115 Nexperia USA Inc. BAS116H.pdf Description: DIODE STANDARD 75V 215MA SOD123F
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 45983 Stücke:
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3329+0.13 EUR
Mindestbestellmenge: 3329
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PBSS5120T,215 PBSS5120T,215 Nexperia USA Inc. PBSS5120T.pdf Description: TRANS PNP 20V 1A TO-236AB
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
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PBSS5120T,215 PBSS5120T,215 Nexperia USA Inc. PBSS5120T.pdf Description: TRANS PNP 20V 1A TO-236AB
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
auf Bestellung 15003 Stücke:
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25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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PBSS5250T,215 PBSS5250T,215 Nexperia USA Inc. PBSS5250T.pdf Description: TRANS PNP 50V 2A TO-236AB
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Produkt ist nicht verfügbar
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PBSS5250T,215 PBSS5250T,215 Nexperia USA Inc. PBSS5250T.pdf Description: TRANS PNP 50V 2A TO-236AB
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2967 Stücke:
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24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
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PBSS5160T-QR PBSS5160T-QR Nexperia USA Inc. PBSS5160T-Q.pdf Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBSS5160T-QR PBSS5160T-QR Nexperia USA Inc. PBSS5160T-Q.pdf Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2968 Stücke:
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40+0.44 EUR
65+0.27 EUR
103+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
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PBSS4032NT,215 PBSS4032NT,215 Nexperia USA Inc. PBSS4032NT.pdf Description: TRANS NPN 30V 2.6A TO-236AB
Qualification: AEC-Q100
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.6 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBSS4032NT,215 PBSS4032NT,215 Nexperia USA Inc. PBSS4032NT.pdf Description: TRANS NPN 30V 2.6A TO-236AB
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.6 A
Grade: Automotive
Supplier Device Package: TO-236AB
auf Bestellung 2766 Stücke:
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19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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BSH103BKR BSH103BKR Nexperia USA Inc. BSH103BK.pdf Description: BSH103BK - 30 V, N-CHANNEL TRENC
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSH103BKR BSH103BKR Nexperia USA Inc. BSH103BK.pdf Description: BSH103BK - 30 V, N-CHANNEL TRENC
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Produkt ist nicht verfügbar
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74LVC86AD,118 74LVC86AD,118 Nexperia USA Inc. 74LVC86A.pdf Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.07V ~ 2V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2500 Stücke:
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2500+0.14 EUR
Mindestbestellmenge: 2500
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74LVC86AD,118 74LVC86AD,118 Nexperia USA Inc. 74LVC86A.pdf Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.07V ~ 2V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2550 Stücke:
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53+0.33 EUR
77+0.23 EUR
88+0.2 EUR
102+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 53
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BCP53,115 BCP53,115 Nexperia USA Inc. BCP53_SER.pdf Description: TRANS PNP 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BCP53,115 BCP53,115 Nexperia USA Inc. BCP53_SER.pdf Description: TRANS PNP 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BZT52-C3V6X BZT52_SER.pdf
BZT52-C3V6X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52-C3V6X BZT52_SER.pdf
BZT52-C3V6X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
115+0.15 EUR
187+0.095 EUR
500+0.069 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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BAS116H,115 BAS116H.pdf
BAS116H,115
Hersteller: Nexperia USA Inc.
Description: DIODE STANDARD 75V 215MA SOD123F
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 45983 Stücke:
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Anzahl Preis
3329+0.13 EUR
Mindestbestellmenge: 3329
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PBSS5120T,215 PBSS5120T.pdf
PBSS5120T,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 1A TO-236AB
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
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PBSS5120T,215 PBSS5120T.pdf
PBSS5120T,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 1A TO-236AB
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
auf Bestellung 15003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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PBSS5250T,215 PBSS5250T.pdf
PBSS5250T,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 50V 2A TO-236AB
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Produkt ist nicht verfügbar
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PBSS5250T,215 PBSS5250T.pdf
PBSS5250T,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 50V 2A TO-236AB
Qualification: AEC-Q100
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
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PBSS5160T-QR PBSS5160T-Q.pdf
PBSS5160T-QR
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBSS5160T-QR PBSS5160T-Q.pdf
PBSS5160T-QR
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
65+0.27 EUR
103+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
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PBSS4032NT,215 PBSS4032NT.pdf
PBSS4032NT,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 30V 2.6A TO-236AB
Qualification: AEC-Q100
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.6 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBSS4032NT,215 PBSS4032NT.pdf
PBSS4032NT,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 30V 2.6A TO-236AB
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.6 A
Grade: Automotive
Supplier Device Package: TO-236AB
auf Bestellung 2766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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BSH103BKR BSH103BK.pdf
BSH103BKR
Hersteller: Nexperia USA Inc.
Description: BSH103BK - 30 V, N-CHANNEL TRENC
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSH103BKR BSH103BK.pdf
BSH103BKR
Hersteller: Nexperia USA Inc.
Description: BSH103BK - 30 V, N-CHANNEL TRENC
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Produkt ist nicht verfügbar
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74LVC86AD,118 74LVC86A.pdf
74LVC86AD,118
Hersteller: Nexperia USA Inc.
Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.07V ~ 2V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.14 EUR
Mindestbestellmenge: 2500
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74LVC86AD,118 74LVC86A.pdf
74LVC86AD,118
Hersteller: Nexperia USA Inc.
Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.07V ~ 2V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
77+0.23 EUR
88+0.2 EUR
102+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 53
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BCP53,115 BCP53_SER.pdf
BCP53,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BCP53,115 BCP53_SER.pdf
BCP53,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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