| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BC847BPN,165 | NEXPERIA |
 Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.4W Case: SC88; SOT363; TSSOP6 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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PUMD10-QF | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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PUMD10,125 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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74LVC1G80GW,125 | NEXPERIA |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; TSSOP5 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Manufacturer series: Mini Logic Family: LVC Case: TSSOP5 Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Type of integrated circuit: digital Technology: CMOS; TTL Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PMN120ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Pulsed drain current: 10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BUK9635-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 24A; Idm: 133A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 24A Pulsed drain current: 133A Power dissipation: 85W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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BCV46,215 | NEXPERIA |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 220MHz |
auf Bestellung 3120 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74LVC11BQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; DHVQFN14; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Supply voltage: 1.2V DC; 1.65...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Quiescent current: 40µA Delay time: 14.1ns |
Produkt ist nicht verfügbar |
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74LVC11D,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 1.2V DC; 1.65...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Quiescent current: 40µA Delay time: 14.1ns |
Produkt ist nicht verfügbar |
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74LVC11PW,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 1.2÷3.6VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 1.2...3.6V DC Operating temperature: -40...125°C Kind of package: tube Family: LVC |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC11PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; -40÷125°C; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 1.2V DC; 1.65...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Quiescent current: 40µA Delay time: 14.1ns |
Produkt ist nicht verfügbar |
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PBSS5160T-QR | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 60V Current gain: 100...400 Collector current: 1A Type of transistor: PNP Application: automotive industry Power dissipation: 1.25W Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PBSS5160T,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 270mW; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 60V Current gain: 100...350 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Power dissipation: 0.27W Polarisation: bipolar Kind of package: reel; tape Frequency: 220MHz |
auf Bestellung 4015 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS5160V,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; SOT666 Case: SOT666 Mounting: SMD Collector-emitter voltage: 60V Current gain: 100...350 Collector current: 1A Type of transistor: PNP Polarisation: bipolar Kind of package: reel; tape Frequency: 220MHz |
Produkt ist nicht verfügbar |
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BCX56-10,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
auf Bestellung 1685 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX56-10,135 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BCX56,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
auf Bestellung 1015 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX56TX | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.1W; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.1W Case: SC62; SOT89 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BSP220,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: SC73; SOT223 Drain-source voltage: -220V Drain current: -0.225A On-state resistance: 12Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape |
auf Bestellung 1455 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP230,135 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -300V; -210mA; Idm: -0.75A; 1.5W Mounting: SMD Technology: DMOS Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -0.75A Case: SC73; SOT223 Drain-source voltage: -300V Drain current: -210mA On-state resistance: 17Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape |
auf Bestellung 863 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP250,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3A On-state resistance: 0.4Ω Type of transistor: P-MOSFET Power dissipation: 1.65W Polarisation: unipolar Gate charge: 25nC Technology: DMOS Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Case: SC73; SOT223 |
auf Bestellung 1422 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD3V3L1UL,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Peak pulse power dissipation: 45W Max. off-state voltage: 3.3V Breakdown voltage: 5.3...6V Max. forward impulse current: 4.5A Semiconductor structure: unidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PESD3V3L2BT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Peak pulse power dissipation: 0.35kW Max. off-state voltage: 3.3V Breakdown voltage: 6.4V Semiconductor structure: bidirectional; double Case: SOT23 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection |
auf Bestellung 3107 Stücke: Lieferzeit 14-21 Tag (e) |
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| PESD3V3L2UM,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883 Type of diode: TVS Peak pulse power dissipation: 30W Max. off-state voltage: 3.3V Breakdown voltage: 5.32...5.88V Max. forward impulse current: 3A Semiconductor structure: unidirectional Case: SOT883 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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| PESD3V3L4UF,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886 Type of diode: TVS Peak pulse power dissipation: 30W Max. off-state voltage: 3.3V Breakdown voltage: 5.32...5.88V Max. forward impulse current: 3A Semiconductor structure: unidirectional Case: SOT886 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PESD3V3U1UT,215 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23 Type of diode: TVS Peak pulse power dissipation: 80W Max. off-state voltage: 3.3V Breakdown voltage: 6.4V Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD3V3V1BLYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 4.5V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 10nA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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| PESD3V3X1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 10V Max. forward impulse current: 8A Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PESD3V3X1BL,315 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5...7.8V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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74HCT125PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT Quiescent current: 160µA |
Produkt ist nicht verfügbar |
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HEF4014BT,653 | NEXPERIA |
Category: Shift registers Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷15VDC Type of integrated circuit: digital Kind of integrated circuit: 8bit; static shift register Technology: CMOS Mounting: SMD Case: SO16 Family: HEF4000B Supply voltage: 3...15V DC Kind of package: reel; tape Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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74HCT86D,653 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Family: HCT |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT86PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Delay time: 48ns Family: HCT |
Produkt ist nicht verfügbar |
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PEMH11,315 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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 +1 |
PMV50XPR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -14.5A Case: SOT23; TO236AB On-state resistance: 86mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2094 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC10D,653 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...125°C Quiescent current: 40µA |
auf Bestellung 952 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC10DB,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SSOP14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...125°C |
auf Bestellung 1973 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC10PW,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: tube Operating temperature: -40...125°C |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC10PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...125°C Quiescent current: 40µA Delay time: 145ns |
Produkt ist nicht verfügbar |
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PHB32N06LT,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 136A Power dissipation: 97W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 43mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 591 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD2CAN,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection Type of diode: TVS array Breakdown voltage: 28V Max. forward impulse current: 5A Peak pulse power dissipation: 230W Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 10nA Number of channels: 2 Application: CAN Operating temperature: max. 150°C |
auf Bestellung 4589 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX585-B2V7,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOD523; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1.1V Case: SOD523 Max. load current: 0.2A Semiconductor structure: single diode Leakage current: 20µA |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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74AHC1G4212GWH | NEXPERIA |
Category: Counters/dividers Description: IC: digital; 12-stage,divider,oscillator; CMOS; Mini Logic; SMD Type of integrated circuit: digital Kind of integrated circuit: 12-stage; divider; oscillator Technology: CMOS Mounting: SMD Case: TSSOP5 Manufacturer series: Mini Logic Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AHC |
Produkt ist nicht verfügbar |
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PDTC124EU,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 4525 Stücke: Lieferzeit 14-21 Tag (e) |
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HEF40244BT,653 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 8; CMOS; SMD; SO20; 3÷15VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Supply voltage: 3...15V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: HEF4000B |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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PMBTA42,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Mounting: SMD Kind of package: reel; tape |
auf Bestellung 3025 Stücke: Lieferzeit 14-21 Tag (e) |
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PMBTA42DS,125 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Case: SC74; SOT457; TSOP6 Pulsed collector current: 0.2A Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PESD5V0L1BA,115 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 500W; 7.6V; 15A; bidirectional; SOD323 Type of diode: TVS Peak pulse power dissipation: 0.5kW Max. off-state voltage: 5V Breakdown voltage: 7.6V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Features of semiconductor devices: ESD protection |
auf Bestellung 7151 Stücke: Lieferzeit 14-21 Tag (e) |
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| PESD5V0C1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 10V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection |
auf Bestellung 8574 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD5V0F1BL,315 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6÷10V; 2.5A; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6...10V Max. forward impulse current: 2.5A Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
auf Bestellung 2567 Stücke: Lieferzeit 14-21 Tag (e) |
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| PESD5V0F1BRSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 28W; 6÷10V; 2.2A; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Peak pulse power dissipation: 28W Max. off-state voltage: 5V Breakdown voltage: 6...10V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PESD5V0L1UL,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 42W; 6.4÷7.2V; 3.5A; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Peak pulse power dissipation: 42W Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PESD5V0L2BT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23 Type of diode: TVS array Peak pulse power dissipation: 0.35kW Max. off-state voltage: 5V Breakdown voltage: 7.6V Max. forward impulse current: 13A Semiconductor structure: bidirectional; double Case: SOT23 Mounting: SMD Leakage current: 1µA Features of semiconductor devices: ESD protection |
auf Bestellung 6410 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD5V0L5UY,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6 Type of diode: TVS array Peak pulse power dissipation: 25W Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 2.5A Semiconductor structure: common anode; fivefold; unidirectional Case: SC88; SOT363; TSSOP6 Mounting: SMD Leakage current: 25nA Features of semiconductor devices: ESD protection |
auf Bestellung 4094 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD5V0L5UY,125 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6 Type of diode: TVS array Peak pulse power dissipation: 25W Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 2.5A Semiconductor structure: common anode; fivefold; unidirectional Case: SC88; SOT363; TSSOP6 Mounting: SMD Leakage current: 25nA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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| PESD5V0R1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 10V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PESD5V0S1BB,115 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 130W; 7.5V; 12A; bidirectional; SOD523 Type of diode: TVS Peak pulse power dissipation: 130W Max. off-state voltage: 5V Breakdown voltage: 7.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
auf Bestellung 3575 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD5V0S1BL,315 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 130W; 5.5÷9.5V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Peak pulse power dissipation: 130W Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD5V0S1UB,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 260W; 6.8V; 15A; unidirectional; SOD523 Type of diode: TVS Peak pulse power dissipation: 260W Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 15A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 1µA Features of semiconductor devices: ESD protection |
auf Bestellung 4336 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT366D,653 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 6; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SO16 Kind of package: reel Kind of output: 3-state Family: HCT |
Produkt ist nicht verfügbar |
| BC847BPN,165 |
|
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| PUMD10-QF |
|
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| PUMD10,125 |
|
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| 74LVC1G80GW,125 |
|
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Family: LVC
Case: TSSOP5
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS; TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Family: LVC
Case: TSSOP5
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS; TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
| PMN120ENEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BUK9635-55A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 24A; Idm: 133A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 24A
Pulsed drain current: 133A
Power dissipation: 85W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 24A; Idm: 133A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 24A
Pulsed drain current: 133A
Power dissipation: 85W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BCV46,215 |
|
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 220MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 220MHz
auf Bestellung 3120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 510+ | 0.14 EUR |
| 590+ | 0.12 EUR |
| 820+ | 0.088 EUR |
| 860+ | 0.083 EUR |
| 74LVC11BQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Quiescent current: 40µA
Delay time: 14.1ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
| 74LVC11D,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Quiescent current: 40µA
Delay time: 14.1ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
| 74LVC11PW,112 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: LVC
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 121+ | 0.59 EUR |
| 74LVC11PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Quiescent current: 40µA
Delay time: 14.1ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
| PBSS5160T-QR |
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...400
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1.25W
Polarisation: bipolar
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...400
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1.25W
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
| PBSS5160T,215 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 270mW; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.27W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 220MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 270mW; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.27W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 220MHz
auf Bestellung 4015 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 860+ | 0.084 EUR |
| 910+ | 0.079 EUR |
| PBSS5160V,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Case: SOT666
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 220MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Case: SOT666
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 220MHz
Produkt ist nicht verfügbar
| BCX56-10,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 1685 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 270+ | 0.27 EUR |
| 455+ | 0.16 EUR |
| 510+ | 0.14 EUR |
| 635+ | 0.11 EUR |
| BCX56-10,135 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BCX56,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 417+ | 0.17 EUR |
| 468+ | 0.15 EUR |
| 581+ | 0.12 EUR |
| BCX56TX |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.1W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.1W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.1W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.1W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BSP220,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC73; SOT223
Drain-source voltage: -220V
Drain current: -0.225A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC73; SOT223
Drain-source voltage: -220V
Drain current: -0.225A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 1.24 EUR |
| 120+ | 0.6 EUR |
| 133+ | 0.54 EUR |
| 162+ | 0.44 EUR |
| 171+ | 0.42 EUR |
| BSP230,135 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -300V; -210mA; Idm: -0.75A; 1.5W
Mounting: SMD
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.75A
Case: SC73; SOT223
Drain-source voltage: -300V
Drain current: -210mA
On-state resistance: 17Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -300V; -210mA; Idm: -0.75A; 1.5W
Mounting: SMD
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.75A
Case: SC73; SOT223
Drain-source voltage: -300V
Drain current: -210mA
On-state resistance: 17Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 105+ | 0.69 EUR |
| 138+ | 0.52 EUR |
| 181+ | 0.4 EUR |
| 191+ | 0.37 EUR |
| BSP250,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.65W
Polarisation: unipolar
Gate charge: 25nC
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: SC73; SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.65W
Polarisation: unipolar
Gate charge: 25nC
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: SC73; SOT223
auf Bestellung 1422 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| 109+ | 0.66 EUR |
| 145+ | 0.5 EUR |
| 179+ | 0.4 EUR |
| 189+ | 0.38 EUR |
| PESD3V3L1UL,315 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 45W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 45W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD3V3L2BT,215 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
auf Bestellung 3107 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.23 EUR |
| 445+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 650+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| PESD3V3L2UM,315 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT883
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT883
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD3V3L4UF,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD3V3U1UT,215 |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 0.24 EUR |
| 500+ | 0.14 EUR |
| 560+ | 0.13 EUR |
| 715+ | 0.1 EUR |
| 755+ | 0.095 EUR |
| PESD3V3V1BLYL |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD3V3X1BCSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD3V3X1BL,315 |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| 74HCT125PW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Quiescent current: 160µA
Produkt ist nicht verfügbar
| HEF4014BT,653 |
|
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; static shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Supply voltage: 3...15V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; static shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Supply voltage: 3...15V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| 74HCT86D,653 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 96+ | 0.74 EUR |
| 74HCT86PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 48ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 48ns
Family: HCT
Produkt ist nicht verfügbar
| PEMH11,315 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| PMV50XPR |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2094 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 171+ | 0.42 EUR |
| 275+ | 0.26 EUR |
| 407+ | 0.18 EUR |
| 431+ | 0.17 EUR |
| 74HC10D,653 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
auf Bestellung 952 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 141+ | 0.51 EUR |
| 155+ | 0.46 EUR |
| 176+ | 0.41 EUR |
| 348+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| 74HC10DB,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 228+ | 0.31 EUR |
| 325+ | 0.22 EUR |
| 371+ | 0.19 EUR |
| 391+ | 0.18 EUR |
| 432+ | 0.17 EUR |
| 74HC10PW,112 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -40...125°C
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 228+ | 0.31 EUR |
| 264+ | 0.27 EUR |
| 74HC10PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 145ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 145ns
Produkt ist nicht verfügbar
| PHB32N06LT,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 97W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 97W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.59 EUR |
| 52+ | 1.39 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.1 EUR |
| PESD2CAN,215 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 28V
Max. forward impulse current: 5A
Peak pulse power dissipation: 230W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Application: CAN
Operating temperature: max. 150°C
Category: Transil diodes - arrays
Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 28V
Max. forward impulse current: 5A
Peak pulse power dissipation: 230W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Application: CAN
Operating temperature: max. 150°C
auf Bestellung 4589 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 275+ | 0.26 EUR |
| 315+ | 0.23 EUR |
| 345+ | 0.21 EUR |
| 440+ | 0.16 EUR |
| BZX585-B2V7,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD523
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD523
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 20µA
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 230+ | 0.31 EUR |
| 74AHC1G4212GWH |
|
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 12-stage,divider,oscillator; CMOS; Mini Logic; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; divider; oscillator
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHC
Category: Counters/dividers
Description: IC: digital; 12-stage,divider,oscillator; CMOS; Mini Logic; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; divider; oscillator
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHC
Produkt ist nicht verfügbar
| PDTC124EU,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 4525 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1275+ | 0.057 EUR |
| 1625+ | 0.044 EUR |
| 1950+ | 0.037 EUR |
| 2775+ | 0.026 EUR |
| 2950+ | 0.024 EUR |
| HEF40244BT,653 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 8; CMOS; SMD; SO20; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Supply voltage: 3...15V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HEF4000B
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 8; CMOS; SMD; SO20; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Supply voltage: 3...15V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HEF4000B
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.35 EUR |
| 15+ | 5.09 EUR |
| 30+ | 2.42 EUR |
| 32+ | 2.29 EUR |
| PMBTA42,215 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3025 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.27 EUR |
| 500+ | 0.14 EUR |
| 719+ | 0.1 EUR |
| 1007+ | 0.071 EUR |
| 1200+ | 0.06 EUR |
| 1731+ | 0.041 EUR |
| 1832+ | 0.039 EUR |
| 3000+ | 0.038 EUR |
| PMBTA42DS,125 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Case: SC74; SOT457; TSOP6
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Case: SC74; SOT457; TSOP6
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| PESD5V0L1BA,115 |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 7.6V; 15A; bidirectional; SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 7.6V; 15A; bidirectional; SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
auf Bestellung 7151 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 379+ | 0.19 EUR |
| 633+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| 878+ | 0.082 EUR |
| 926+ | 0.077 EUR |
| PESD5V0C1BSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
auf Bestellung 8574 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 340+ | 0.21 EUR |
| 600+ | 0.12 EUR |
| 660+ | 0.11 EUR |
| 810+ | 0.089 EUR |
| 855+ | 0.084 EUR |
| PESD5V0F1BL,315 |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6÷10V; 2.5A; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6÷10V; 2.5A; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
auf Bestellung 2567 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 430+ | 0.17 EUR |
| 540+ | 0.13 EUR |
| 605+ | 0.12 EUR |
| 640+ | 0.11 EUR |
| PESD5V0F1BRSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 28W; 6÷10V; 2.2A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Peak pulse power dissipation: 28W
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 28W; 6÷10V; 2.2A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Peak pulse power dissipation: 28W
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD5V0L1UL,315 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 42W; 6.4÷7.2V; 3.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 42W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 42W; 6.4÷7.2V; 3.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 42W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD5V0L2BT,215 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
auf Bestellung 6410 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 176+ | 0.41 EUR |
| 220+ | 0.33 EUR |
| 293+ | 0.24 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| PESD5V0L5UY,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6
Type of diode: TVS array
Peak pulse power dissipation: 25W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Features of semiconductor devices: ESD protection
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6
Type of diode: TVS array
Peak pulse power dissipation: 25W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Features of semiconductor devices: ESD protection
auf Bestellung 4094 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 220+ | 0.33 EUR |
| 374+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 544+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| PESD5V0L5UY,125 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6
Type of diode: TVS array
Peak pulse power dissipation: 25W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Features of semiconductor devices: ESD protection
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6
Type of diode: TVS array
Peak pulse power dissipation: 25W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD5V0R1BSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD5V0S1BB,115 |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 7.5V; 12A; bidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 7.5V; 12A; bidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
auf Bestellung 3575 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 309+ | 0.23 EUR |
| 610+ | 0.12 EUR |
| 695+ | 0.1 EUR |
| 878+ | 0.081 EUR |
| 929+ | 0.077 EUR |
| PESD5V0S1BL,315 |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1875+ | 0.038 EUR |
| 2275+ | 0.032 EUR |
| 2575+ | 0.028 EUR |
| 2950+ | 0.024 EUR |
| 3125+ | 0.023 EUR |
| PESD5V0S1UB,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 260W; 6.8V; 15A; unidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 260W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 260W; 6.8V; 15A; unidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 260W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
auf Bestellung 4336 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 309+ | 0.23 EUR |
| 719+ | 0.1 EUR |
| 819+ | 0.087 EUR |
| 1031+ | 0.069 EUR |
| 1090+ | 0.066 EUR |
| 74HCT366D,653 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 6; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Kind of package: reel
Kind of output: 3-state
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 6; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Kind of package: reel
Kind of output: 3-state
Family: HCT
Produkt ist nicht verfügbar