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MJH11020G MJH11020G onsemi mjh11017-d.pdf Description: TRANS NPN DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.68 EUR
30+5.54 EUR
Mindestbestellmenge: 2
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MJH11021G MJH11021G onsemi mjh11017-d.pdf Description: TRANS PNP DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.57 EUR
30+4.85 EUR
120+4.03 EUR
Mindestbestellmenge: 3
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MJH11022G MJH11022G onsemi mjh11017-d.pdf Description: TRANS NPN DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 2542 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
30+4.79 EUR
120+3.98 EUR
510+3.38 EUR
1020+3.25 EUR
Mindestbestellmenge: 3
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MJH6284G MJH6284G onsemi mjh6284-d.pdf Description: TRANS NPN DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
auf Bestellung 1507 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.55 EUR
30+4.83 EUR
120+4.01 EUR
510+3.4 EUR
1020+3.26 EUR
Mindestbestellmenge: 3
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MJH6287G MJH6287G onsemi mjh6284-d.pdf Description: TRANS PNP DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
auf Bestellung 5531 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.76 EUR
30+4.96 EUR
120+4.12 EUR
510+3.51 EUR
1020+3.37 EUR
Mindestbestellmenge: 3
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MJL1302AG MJL1302AG onsemi mjl3281a-d.pdf Description: TRANS PNP 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
auf Bestellung 5946 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.85 EUR
25+5.16 EUR
100+4.27 EUR
500+3.57 EUR
1000+3.45 EUR
Mindestbestellmenge: 2
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MJL21193G MJL21193G onsemi mjl21193-d.pdf description Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.49 EUR
25+5.54 EUR
100+4.6 EUR
Mindestbestellmenge: 2
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MJL21194G MJL21194G onsemi mjl21193-d.pdf description Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.49 EUR
25+5.54 EUR
100+4.6 EUR
Mindestbestellmenge: 2
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MJL21195G MJL21195G onsemi mjl21195-d.pdf Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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MJL21196G MJL21196G onsemi mjl21195-d.pdf Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.5 EUR
25+5.54 EUR
100+4.6 EUR
Mindestbestellmenge: 2
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MJL3281AG MJL3281AG onsemi mjl3281a-d.pdf Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
auf Bestellung 8146 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.98 EUR
25+5.23 EUR
100+4.33 EUR
500+3.62 EUR
1000+3.49 EUR
Mindestbestellmenge: 2
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MJL4281AG MJL4281AG onsemi mjl4281a-d.pdf Description: TRANS NPN 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.33 EUR
25+6.71 EUR
100+5.61 EUR
Mindestbestellmenge: 2
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MJL4302AG MJL4302AG onsemi mjl4281a-d.pdf Description: TRANS PNP 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.09 EUR
25+6.56 EUR
100+5.48 EUR
500+4.64 EUR
Mindestbestellmenge: 2
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MM3Z12VST1G MM3Z12VST1G onsemi mm3z2v4st1-d.pdf Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 14500 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.022 EUR
6000+0.021 EUR
Mindestbestellmenge: 3000
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MM3Z18VST1G MM3Z18VST1G onsemi mm3z2v4st1-d.pdf Description: DIODE ZENER 18V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Produkt ist nicht verfügbar
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MM3Z6V2T1G MM3Z6V2T1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 6.2V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.03 EUR
6000+0.029 EUR
9000+0.027 EUR
15000+0.026 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MM5Z4V7ST1G MM5Z4V7ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD523
Produkt ist nicht verfügbar
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MM5Z5V1ST1G MM5Z5V1ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
6000+0.063 EUR
9000+0.059 EUR
15000+0.055 EUR
21000+0.052 EUR
30000+0.05 EUR
75000+0.045 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MM5Z5V6ST1G MM5Z5V6ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 5.61V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.61 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.044 EUR
6000+0.041 EUR
9000+0.039 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD101LT1G MMBD101LT1G onsemi mbd101-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
6000+0.071 EUR
9000+0.07 EUR
15000+0.069 EUR
21000+0.068 EUR
30000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD2835LT1G MMBD2835LT1G onsemi mmbd2835lt1-d.pdf Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.068 EUR
6000+0.057 EUR
9000+0.05 EUR
15000+0.047 EUR
30000+0.043 EUR
Mindestbestellmenge: 3000
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MMBD2836LT1G MMBD2836LT1G onsemi mmbd2835lt1-d.pdf Description: DIODE ARRAY GP 75V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 12379 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
223+0.079 EUR
297+0.059 EUR
500+0.049 EUR
Mindestbestellmenge: 112
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MMBD2837LT1G MMBD2837LT1G onsemi mmbd2837lt1-d.pdf Description: DIODE ARRAY GP 30V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 19236 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 35
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MMBD2838LT1G MMBD2838LT1G onsemi mmbd2837lt1-d.pdf Description: DIODE ARRAY GP 50V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 147141 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
173+0.1 EUR
206+0.086 EUR
500+0.062 EUR
1000+0.054 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
MMBD301LT1G MMBD301LT1G onsemi mbd301-d.pdf Description: DIODE SCHOTTKY 30V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
auf Bestellung 223894 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.041 EUR
6000+0.039 EUR
9000+0.038 EUR
15000+0.037 EUR
30000+0.036 EUR
75000+0.035 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD352LT1G MMBD352LT1G onsemi mmbd352lt1-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.056 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD353LT1G MMBD353LT1G onsemi mmbd352lt1-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
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MMBD354LT1G MMBD354LT1G onsemi mmbd352lt1-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
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MMBD6050LT1G MMBD6050LT1G onsemi mmbd6050lt1-d.pdf Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6100LT1G MMBD6100LT1G onsemi mmbd6100lt1-d.pdf Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD7000LT1G MMBD7000LT1G onsemi mmbd7000lt1-d.pdf Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar
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MMBD701LT1G MMBD701LT1G onsemi mbd701-d.pdf Description: DIODE SCHOTTKY 70V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
Produkt ist nicht verfügbar
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MMBD717LT1G MMBD717LT1G onsemi mmbd717lt1-d.pdf Description: DIODE ARRAY SCHOTT 20V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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MMBD914LT1G MMBD914LT1G onsemi mmbd914lt1-d.pdf Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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MMBF0201NLT1G MMBF0201NLT1G onsemi mmbf0201nlt1-d.pdf Description: MOSFET N-CH 20V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
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MMBF170LT1G MMBF170LT1G onsemi mmbf170lt1-d.pdf Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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30000+0.057 EUR
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MMBF2201NT1G MMBF2201NT1G onsemi mmbf2201nt1-d.pdf Description: MOSFET N-CH 20V 300MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
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MMBF4391LT1G MMBF4391LT1G onsemi mmbf4391lt1-d.pdf Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
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MMBF4392LT1G MMBF4392LT1G onsemi mmbf4391lt1-d.pdf Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
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MMBF4393LT1G MMBF4393LT1G onsemi mmbf4391lt1-d.pdf Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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MMBF4416LT1G MMBF4416LT1G onsemi mmbf4416lt1-d.pdf Description: RF MOSFET JFET 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
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MMBF5457LT1G MMBF5457LT1G onsemi mmbf5457lt1-d.pdf Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
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MMBF5460LT1G MMBF5460LT1G onsemi mmbf5460lt1-d.pdf Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
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MMBF5484LT1G MMBF5484LT1G onsemi mmbf5484lt1-d.pdf Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
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MMBFJ175LT1G MMBFJ175LT1G onsemi mmbfj175lt1-d.pdf Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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MMBFJ177LT1G MMBFJ177LT1G onsemi mmbfj177lt1-d.pdf Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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MMBFJ309LT1G MMBFJ309LT1G onsemi mmbfj309lt1-d.pdf Description: RF MOSFET JFET SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
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MMBFJ310LT1G MMBFJ310LT1G onsemi mmbfj309lt1-d.pdf Description: RF MOSFET JFET 10V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
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MMBFU310LT1G MMBFU310LT1G onsemi mmbfu310lt1-d.pdf Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Produkt ist nicht verfügbar
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MMBT2369ALT1G MMBT2369ALT1G onsemi mmbt2369lt1-d.pdf Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
auf Bestellung 4240 Stücke:
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MMBT2369LT1G MMBT2369LT1G onsemi mmbt2369lt1-d.pdf description Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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MMBT2484LT1G MMBT2484LT1G onsemi mmbt2484lt1-d.pdf Description: TRANS NPN 60V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
auf Bestellung 33000 Stücke:
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3000+0.058 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.045 EUR
21000+0.043 EUR
30000+0.041 EUR
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MMBT2907ALT1G MMBT2907ALT1G onsemi mmbt2907alt1-d.pdf Description: TRANS PNP 60V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2907AWT1G MMBT2907AWT1G onsemi mmbt2907awt1-d.pdf Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
124+0.14 EUR
202+0.087 EUR
500+0.064 EUR
1000+0.056 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3904LT1G MMBT3904LT1G onsemi mmbt3904lt1-d.pdf Description: TRANS NPN 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 1044270 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.036 EUR
6000+0.032 EUR
9000+0.03 EUR
15000+0.027 EUR
21000+0.026 EUR
30000+0.025 EUR
75000+0.022 EUR
150000+0.02 EUR
300000+0.018 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3904LT3G MMBT3904LT3G onsemi mmbt3904lt1-d.pdf Description: TRANS NPN 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.029 EUR
20000+0.026 EUR
30000+0.025 EUR
50000+0.023 EUR
70000+0.022 EUR
100000+0.021 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3904TT1G MMBT3904TT1G onsemi mmbt3904tt1-d.pdf Description: TRANS NPN 40V 0.2A SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.045 EUR
6000+0.04 EUR
9000+0.037 EUR
15000+0.034 EUR
21000+0.033 EUR
30000+0.031 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3904WT1G MMBT3904WT1G onsemi mmbt3904wt1-d.pdf Description: TRANS NPN 40V 0.2A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.04 EUR
6000+0.035 EUR
9000+0.033 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906LT1G MMBT3906LT1G onsemi mmbt3906lt1-d.pdf Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 815812 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.033 EUR
6000+0.03 EUR
9000+0.028 EUR
15000+0.025 EUR
21000+0.024 EUR
30000+0.023 EUR
75000+0.02 EUR
150000+0.018 EUR
300000+0.017 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906WT1G MMBT3906WT1G onsemi mmbt3904wt1-d.pdf Description: TRANS PNP 40V 0.2A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.04 EUR
6000+0.035 EUR
9000+0.033 EUR
15000+0.03 EUR
21000+0.029 EUR
30000+0.027 EUR
75000+0.024 EUR
Mindestbestellmenge: 3000
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MJH11020G mjh11017-d.pdf
MJH11020G
Hersteller: onsemi
Description: TRANS NPN DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.68 EUR
30+5.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJH11021G mjh11017-d.pdf
MJH11021G
Hersteller: onsemi
Description: TRANS PNP DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.57 EUR
30+4.85 EUR
120+4.03 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MJH11022G mjh11017-d.pdf
MJH11022G
Hersteller: onsemi
Description: TRANS NPN DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 2542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
30+4.79 EUR
120+3.98 EUR
510+3.38 EUR
1020+3.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MJH6284G mjh6284-d.pdf
MJH6284G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
auf Bestellung 1507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.55 EUR
30+4.83 EUR
120+4.01 EUR
510+3.4 EUR
1020+3.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MJH6287G mjh6284-d.pdf
MJH6287G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
auf Bestellung 5531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.76 EUR
30+4.96 EUR
120+4.12 EUR
510+3.51 EUR
1020+3.37 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MJL1302AG mjl3281a-d.pdf
MJL1302AG
Hersteller: onsemi
Description: TRANS PNP 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
auf Bestellung 5946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.85 EUR
25+5.16 EUR
100+4.27 EUR
500+3.57 EUR
1000+3.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJL21193G description mjl21193-d.pdf
MJL21193G
Hersteller: onsemi
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.49 EUR
25+5.54 EUR
100+4.6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJL21194G description mjl21193-d.pdf
MJL21194G
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.49 EUR
25+5.54 EUR
100+4.6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJL21195G mjl21195-d.pdf
MJL21195G
Hersteller: onsemi
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJL21196G mjl21195-d.pdf
MJL21196G
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.5 EUR
25+5.54 EUR
100+4.6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJL3281AG mjl3281a-d.pdf
MJL3281AG
Hersteller: onsemi
Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
auf Bestellung 8146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.98 EUR
25+5.23 EUR
100+4.33 EUR
500+3.62 EUR
1000+3.49 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJL4281AG mjl4281a-d.pdf
MJL4281AG
Hersteller: onsemi
Description: TRANS NPN 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.33 EUR
25+6.71 EUR
100+5.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJL4302AG mjl4281a-d.pdf
MJL4302AG
Hersteller: onsemi
Description: TRANS PNP 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.09 EUR
25+6.56 EUR
100+5.48 EUR
500+4.64 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z12VST1G mm3z2v4st1-d.pdf
MM3Z12VST1G
Hersteller: onsemi
Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 14500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.022 EUR
6000+0.021 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z18VST1G mm3z2v4st1-d.pdf
MM3Z18VST1G
Hersteller: onsemi
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z6V2T1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
MM3Z6V2T1G
Hersteller: onsemi
Description: DIODE ZENER 6.2V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.03 EUR
6000+0.029 EUR
9000+0.027 EUR
15000+0.026 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MM5Z4V7ST1G mm5z2v4st1-d.pdf
MM5Z4V7ST1G
Hersteller: onsemi
Description: DIODE ZENER 4.7V 500MW SOD523
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM5Z5V1ST1G mm5z2v4st1-d.pdf
MM5Z5V1ST1G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.063 EUR
9000+0.059 EUR
15000+0.055 EUR
21000+0.052 EUR
30000+0.05 EUR
75000+0.045 EUR
Mindestbestellmenge: 3000
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MM5Z5V6ST1G mm5z2v4st1-d.pdf
MM5Z5V6ST1G
Hersteller: onsemi
Description: DIODE ZENER 5.61V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.61 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.044 EUR
6000+0.041 EUR
9000+0.039 EUR
Mindestbestellmenge: 3000
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MMBD101LT1G mbd101-d.pdf
MMBD101LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.074 EUR
6000+0.071 EUR
9000+0.07 EUR
15000+0.069 EUR
21000+0.068 EUR
30000+0.067 EUR
Mindestbestellmenge: 3000
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MMBD2835LT1G mmbd2835lt1-d.pdf
MMBD2835LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.068 EUR
6000+0.057 EUR
9000+0.05 EUR
15000+0.047 EUR
30000+0.043 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD2836LT1G mmbd2835lt1-d.pdf
MMBD2836LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 75V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 12379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
223+0.079 EUR
297+0.059 EUR
500+0.049 EUR
Mindestbestellmenge: 112
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MMBD2837LT1G mmbd2837lt1-d.pdf
MMBD2837LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 30V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 19236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 35
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MMBD2838LT1G mmbd2837lt1-d.pdf
MMBD2838LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 50V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 147141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
173+0.1 EUR
206+0.086 EUR
500+0.062 EUR
1000+0.054 EUR
Mindestbestellmenge: 112
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MMBD301LT1G mbd301-d.pdf
MMBD301LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
auf Bestellung 223894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.041 EUR
6000+0.039 EUR
9000+0.038 EUR
15000+0.037 EUR
30000+0.036 EUR
75000+0.035 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD352LT1G mmbd352lt1-d.pdf
MMBD352LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
Mindestbestellmenge: 3000
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MMBD353LT1G mmbd352lt1-d.pdf
MMBD353LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.1 EUR
9000+0.096 EUR
15000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD354LT1G mmbd352lt1-d.pdf
MMBD354LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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MMBD6050LT1G mmbd6050lt1-d.pdf
MMBD6050LT1G
Hersteller: onsemi
Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.029 EUR
6000+0.024 EUR
9000+0.023 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD6100LT1G mmbd6100lt1-d.pdf
MMBD6100LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.027 EUR
9000+0.026 EUR
15000+0.024 EUR
21000+0.022 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD7000LT1G mmbd7000lt1-d.pdf
MMBD7000LT1G
Hersteller: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar
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MMBD701LT1G mbd701-d.pdf
MMBD701LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
Produkt ist nicht verfügbar
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MMBD717LT1G mmbd717lt1-d.pdf
MMBD717LT1G
Hersteller: onsemi
Description: DIODE ARRAY SCHOTT 20V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.093 EUR
6000+0.083 EUR
9000+0.079 EUR
15000+0.073 EUR
21000+0.07 EUR
30000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBD914LT1G mmbd914lt1-d.pdf
MMBD914LT1G
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 435945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.037 EUR
6000+0.036 EUR
15000+0.018 EUR
21000+0.017 EUR
Mindestbestellmenge: 3000
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MMBF0201NLT1G mmbf0201nlt1-d.pdf
MMBF0201NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.091 EUR
9000+0.078 EUR
15000+0.077 EUR
Mindestbestellmenge: 3000
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MMBF170LT1G mmbf170lt1-d.pdf
MMBF170LT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.072 EUR
9000+0.068 EUR
15000+0.063 EUR
21000+0.06 EUR
30000+0.057 EUR
75000+0.051 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBF2201NT1G mmbf2201nt1-d.pdf
MMBF2201NT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 300MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBF4391LT1G mmbf4391lt1-d.pdf
MMBF4391LT1G
Hersteller: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBF4392LT1G mmbf4391lt1-d.pdf
MMBF4392LT1G
Hersteller: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
21000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBF4393LT1G mmbf4391lt1-d.pdf
MMBF4393LT1G
Hersteller: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBF4416LT1G mmbf4416lt1-d.pdf
MMBF4416LT1G
Hersteller: onsemi
Description: RF MOSFET JFET 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
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MMBF5457LT1G mmbf5457lt1-d.pdf
MMBF5457LT1G
Hersteller: onsemi
Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
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MMBF5460LT1G mmbf5460lt1-d.pdf
MMBF5460LT1G
Hersteller: onsemi
Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
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MMBF5484LT1G mmbf5484lt1-d.pdf
MMBF5484LT1G
Hersteller: onsemi
Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
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MMBFJ175LT1G mmbfj175lt1-d.pdf
MMBFJ175LT1G
Hersteller: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
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MMBFJ177LT1G mmbfj177lt1-d.pdf
MMBFJ177LT1G
Hersteller: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
21000+0.13 EUR
75000+0.12 EUR
Mindestbestellmenge: 3000
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MMBFJ309LT1G mmbfj309lt1-d.pdf
MMBFJ309LT1G
Hersteller: onsemi
Description: RF MOSFET JFET SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBFJ310LT1G mmbfj309lt1-d.pdf
MMBFJ310LT1G
Hersteller: onsemi
Description: RF MOSFET JFET 10V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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MMBFU310LT1G mmbfu310lt1-d.pdf
MMBFU310LT1G
Hersteller: onsemi
Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Produkt ist nicht verfügbar
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MMBT2369ALT1G mmbt2369lt1-d.pdf
MMBT2369ALT1G
Hersteller: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
auf Bestellung 4240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2369LT1G description mmbt2369lt1-d.pdf
MMBT2369LT1G
Hersteller: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2484LT1G mmbt2484lt1-d.pdf
MMBT2484LT1G
Hersteller: onsemi
Description: TRANS NPN 60V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.045 EUR
21000+0.043 EUR
30000+0.041 EUR
Mindestbestellmenge: 3000
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MMBT2907ALT1G mmbt2907alt1-d.pdf
MMBT2907ALT1G
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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MMBT2907AWT1G mmbt2907awt1-d.pdf
MMBT2907AWT1G
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
124+0.14 EUR
202+0.087 EUR
500+0.064 EUR
1000+0.056 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3904LT1G mmbt3904lt1-d.pdf
MMBT3904LT1G
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 1044270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.036 EUR
6000+0.032 EUR
9000+0.03 EUR
15000+0.027 EUR
21000+0.026 EUR
30000+0.025 EUR
75000+0.022 EUR
150000+0.02 EUR
300000+0.018 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3904LT3G mmbt3904lt1-d.pdf
MMBT3904LT3G
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.029 EUR
20000+0.026 EUR
30000+0.025 EUR
50000+0.023 EUR
70000+0.022 EUR
100000+0.021 EUR
Mindestbestellmenge: 10000
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MMBT3904TT1G mmbt3904tt1-d.pdf
MMBT3904TT1G
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.045 EUR
6000+0.04 EUR
9000+0.037 EUR
15000+0.034 EUR
21000+0.033 EUR
30000+0.031 EUR
Mindestbestellmenge: 3000
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MMBT3904WT1G mmbt3904wt1-d.pdf
MMBT3904WT1G
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
6000+0.035 EUR
9000+0.033 EUR
Mindestbestellmenge: 3000
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MMBT3906LT1G mmbt3906lt1-d.pdf
MMBT3906LT1G
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 815812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.033 EUR
6000+0.03 EUR
9000+0.028 EUR
15000+0.025 EUR
21000+0.024 EUR
30000+0.023 EUR
75000+0.02 EUR
150000+0.018 EUR
300000+0.017 EUR
Mindestbestellmenge: 3000
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MMBT3906WT1G mmbt3904wt1-d.pdf
MMBT3906WT1G
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
6000+0.035 EUR
9000+0.033 EUR
15000+0.03 EUR
21000+0.029 EUR
30000+0.027 EUR
75000+0.024 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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