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MJ4502G MJ4502G onsemi mj4502-d.pdf Description: TRANS PNP 100V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.4 EUR
10+11.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJD112-1G MJD112-1G onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
75+1.06 EUR
150+0.95 EUR
525+0.79 EUR
1050+0.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MJD112T4G MJD112T4G onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
auf Bestellung 122500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.39 EUR
5000+0.36 EUR
7500+0.35 EUR
12500+0.33 EUR
17500+0.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD117T4G MJD117T4G onsemi mjd112-d.pdf Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 6446 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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MJD122T4G MJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 46500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.55 EUR
5000+0.51 EUR
7500+0.49 EUR
12500+0.47 EUR
Mindestbestellmenge: 2500
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MJD127T4G MJD127T4G onsemi mjd122-d.pdf Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.46 EUR
5000+0.43 EUR
7500+0.41 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD200T4G MJD200T4G onsemi mjd200-d.pdf Description: TRANS NPN 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
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MJD210T4G MJD210T4G onsemi mjd200-d.pdf Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.36 EUR
5000+0.33 EUR
7500+0.31 EUR
12500+0.3 EUR
17500+0.29 EUR
25000+0.28 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD243T4G MJD243T4G onsemi mjd243-d.pdf Description: TRANS NPN 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
auf Bestellung 177500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.43 EUR
5000+0.4 EUR
7500+0.38 EUR
12500+0.36 EUR
17500+0.35 EUR
Mindestbestellmenge: 2500
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MJD253T4G MJD253T4G onsemi mjd243-d.pdf Description: TRANS PNP 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.31 EUR
5000+0.29 EUR
7500+0.27 EUR
Mindestbestellmenge: 2500
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MJD2955T4G MJD2955T4G onsemi mjd2955-d.pdf Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.42 EUR
Mindestbestellmenge: 2500
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MJD3055T4G MJD3055T4G onsemi mjd2955-d.pdf description Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.52 EUR
5000+0.48 EUR
7500+0.46 EUR
12500+0.44 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD31CT4G MJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.33 EUR
5000+0.3 EUR
7500+0.29 EUR
12500+0.27 EUR
17500+0.26 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD32CT4G MJD32CT4G onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.38 EUR
5000+0.35 EUR
7500+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD340T4G MJD340T4G onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.34 EUR
5000+0.31 EUR
7500+0.3 EUR
12500+0.28 EUR
17500+0.27 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD350T4G MJD350T4G onsemi mjd340-d.pdf Description: TRANS PNP 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 26034 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD41CT4G MJD41CT4G onsemi mjd41c-d.pdf Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.47 EUR
5000+0.43 EUR
Mindestbestellmenge: 2500
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MJD42CT4G MJD42CT4G onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11-1G MJD44H11-1G onsemi mjd44h11-d.pdf description Description: TRANS NPN 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
75+0.76 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G MJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.44 EUR
5000+0.41 EUR
7500+0.39 EUR
12500+0.37 EUR
17500+0.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD45H11-1G MJD45H11-1G onsemi mjd44h11-d.pdf description Description: TRANS PNP 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJD45H11T4G MJD45H11T4G onsemi mjd44h11-d.pdf description Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.45 EUR
5000+0.41 EUR
7500+0.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD47T4G MJD47T4G onsemi mjd47-d.pdf Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
auf Bestellung 18077 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
16+1.15 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD50T4G MJD50T4G onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 41177 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
MJE13005G MJE13005G onsemi mje13005-d.pdf description Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE13007G MJE13007G onsemi mje13007-d.pdf description Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 7366 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
50+1.36 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.81 EUR
5000+0.74 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJE13009G MJE13009G onsemi mje13009-d.pdf description Description: TRANS NPN 400V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE15028G MJE15028G onsemi mje15028-d.pdf Description: TRANS NPN 120V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 50 W
auf Bestellung 2207 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.31 EUR
50+1.6 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.04 EUR
2000+0.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15029G MJE15029G onsemi mje15028-d.pdf Description: TRANS PNP 120V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 50 W
auf Bestellung 4650 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
50+2.08 EUR
100+1.87 EUR
500+1.51 EUR
1000+1.39 EUR
2000+1.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MJE15030G MJE15030G onsemi mje15028-d.pdf Description: TRANS NPN 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 3168 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
50+1.55 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.01 EUR
2000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15031G MJE15031G onsemi mje15028-d.pdf Description: TRANS PNP 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 4402 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
50+1.56 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.02 EUR
2000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15032G MJE15032G onsemi mje15032-d.pdf Description: TRANS NPN 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 23422 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
500+1.09 EUR
1000+1 EUR
2000+0.93 EUR
5000+0.85 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15033G MJE15033G onsemi mje15032-d.pdf Description: TRANS PNP 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 350142 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
500+1.09 EUR
1000+1 EUR
2000+0.93 EUR
5000+0.85 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15034G MJE15034G onsemi mje15034-d.pdf Description: TRANS NPN 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 674 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.19 EUR
50+1.54 EUR
100+1.38 EUR
500+1.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15035G MJE15035G onsemi mje15034-d.pdf Description: TRANS PNP 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 1784 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.29 EUR
50+1.6 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE170G MJE170G onsemi mje171-d.pdf Description: TRANS PNP 40V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
auf Bestellung 10573 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
16+1.11 EUR
100+0.76 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.52 EUR
5000+0.47 EUR
10000+0.46 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
MJE171G MJE171G onsemi mje171-d.pdf Description: TRANS PNP 60V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
auf Bestellung 5490 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
12+1.53 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.72 EUR
2000+0.66 EUR
5000+0.6 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MJE18004G MJE18004G onsemi mje18004-d.pdf description Description: TRANS NPN 450V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
auf Bestellung 743 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.27 EUR
50+1.59 EUR
100+1.42 EUR
500+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE18008G MJE18008G onsemi mje18008-d.pdf Description: TRANS NPN 450V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 900mA, 4.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 125 W
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.88 EUR
50+2.43 EUR
100+2.19 EUR
500+1.78 EUR
1000+1.65 EUR
2000+1.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MJE180G MJE180G onsemi mje171-d.pdf Description: TRANS NPN 40V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
11+1.67 EUR
100+1.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJE181G MJE181G onsemi mje171-d.pdf Description: TRANS NPN 60V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
auf Bestellung 522 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
16+1.15 EUR
100+0.75 EUR
500+0.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJE200G MJE200G onsemi mje200-d.pdf Description: TRANS NPN 40V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
auf Bestellung 4161 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJE210G MJE210G onsemi mje210-d.pdf Description: TRANS PNP 40V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE243G MJE243G onsemi mje243-d.pdf Description: TRANS NPN 100V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJE253G MJE253G onsemi mje243-d.pdf Description: TRANS PNP 100V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 10100 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.55 EUR
2000+0.5 EUR
5000+0.45 EUR
10000+0.42 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJE270G MJE270G onsemi mje270-d.pdf Description: TRANS NPN DARL 100V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
14+1.31 EUR
100+0.86 EUR
500+0.67 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MJE2955TG MJE2955TG onsemi mje2955t-d.pdf Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MJE3055TG MJE3055TG onsemi mje2955t-d.pdf description Description: TRANS NPN 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
auf Bestellung 49324 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
50+1.03 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
2000+0.6 EUR
5000+0.54 EUR
10000+0.51 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MJE340G MJE340G onsemi mje340-d.pdf description Description: TRANS NPN 300V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
auf Bestellung 14247 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
19+0.93 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.42 EUR
2000+0.38 EUR
5000+0.34 EUR
10000+0.32 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
MJE3439G MJE3439G onsemi mje3439-d.pdf Description: TRANS NPN 350V 0.3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 15 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE344G MJE344G onsemi mje344-d.pdf Description: TRANS NPN 200V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 20 W
Produkt ist nicht verfügbar
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MJE350G MJE350G onsemi mje350-d.pdf Description: TRANS PNP 300V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
auf Bestellung 8442 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.56 EUR
5000+0.5 EUR
Mindestbestellmenge: 9
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MJE371G MJE371G onsemi mje371-d.pdf Description: TRANS PNP 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
13+1.36 EUR
500+0.9 EUR
Mindestbestellmenge: 11
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MJE4343G MJE4343G onsemi mje4343-d.pdf Description: TRANS NPN 160V 16A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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MJE4353G MJE4353G onsemi mje4343-d.pdf Description: TRANS PNP 160V 16A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: SOT-93
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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MJE5730G MJE5730G onsemi mje5730-d.pdf Description: TRANS PNP 300V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 40 W
auf Bestellung 1426 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
50+1.35 EUR
100+1.22 EUR
500+0.99 EUR
1000+0.91 EUR
Mindestbestellmenge: 7
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MJE5731AG MJE5731AG onsemi mje5730-d.pdf Description: TRANS PNP 375V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 40 W
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
50+1.39 EUR
100+1.24 EUR
Mindestbestellmenge: 7
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MJE5742G MJE5742G onsemi mje5740-d.pdf Description: TRANS NPN DARL 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
50+2.03 EUR
100+1.82 EUR
500+1.46 EUR
1000+1.35 EUR
2000+1.25 EUR
Mindestbestellmenge: 5
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MJE5850G MJE5850G onsemi mje5850-d.pdf Description: TRANS PNP 300V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MJE5851G MJE5851G onsemi mje5850-d.pdf Description: TRANS PNP 350V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MJ4502G mj4502-d.pdf
MJ4502G
Hersteller: onsemi
Description: TRANS PNP 100V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.4 EUR
10+11.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJD112-1G mjd112-d.pdf
MJD112-1G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
75+1.06 EUR
150+0.95 EUR
525+0.79 EUR
1050+0.72 EUR
Mindestbestellmenge: 8
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MJD112T4G mjd112-d.pdf
MJD112T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
auf Bestellung 122500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
5000+0.36 EUR
7500+0.35 EUR
12500+0.33 EUR
17500+0.32 EUR
Mindestbestellmenge: 2500
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MJD117T4G mjd112-d.pdf
MJD117T4G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 6446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD122T4G mjd122-d.pdf
MJD122T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 46500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.55 EUR
5000+0.51 EUR
7500+0.49 EUR
12500+0.47 EUR
Mindestbestellmenge: 2500
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MJD127T4G mjd122-d.pdf
MJD127T4G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.46 EUR
5000+0.43 EUR
7500+0.41 EUR
Mindestbestellmenge: 2500
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MJD200T4G mjd200-d.pdf
MJD200T4G
Hersteller: onsemi
Description: TRANS NPN 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
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MJD210T4G mjd200-d.pdf
MJD210T4G
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.36 EUR
5000+0.33 EUR
7500+0.31 EUR
12500+0.3 EUR
17500+0.29 EUR
25000+0.28 EUR
Mindestbestellmenge: 2500
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MJD243T4G mjd243-d.pdf
MJD243T4G
Hersteller: onsemi
Description: TRANS NPN 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
auf Bestellung 177500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.43 EUR
5000+0.4 EUR
7500+0.38 EUR
12500+0.36 EUR
17500+0.35 EUR
Mindestbestellmenge: 2500
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MJD253T4G mjd243-d.pdf
MJD253T4G
Hersteller: onsemi
Description: TRANS PNP 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.31 EUR
5000+0.29 EUR
7500+0.27 EUR
Mindestbestellmenge: 2500
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MJD2955T4G mjd2955-d.pdf
MJD2955T4G
Hersteller: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.42 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD3055T4G description mjd2955-d.pdf
MJD3055T4G
Hersteller: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.52 EUR
5000+0.48 EUR
7500+0.46 EUR
12500+0.44 EUR
Mindestbestellmenge: 2500
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MJD31CT4G mjd31-d.pdf
MJD31CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.33 EUR
5000+0.3 EUR
7500+0.29 EUR
12500+0.27 EUR
17500+0.26 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD32CT4G mjd31-d.pdf
MJD32CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.38 EUR
5000+0.35 EUR
7500+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD340T4G mjd340-d.pdf
MJD340T4G
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.34 EUR
5000+0.31 EUR
7500+0.3 EUR
12500+0.28 EUR
17500+0.27 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD350T4G mjd340-d.pdf
MJD350T4G
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 26034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD41CT4G mjd41c-d.pdf
MJD41CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.47 EUR
5000+0.43 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD42CT4G mjd41c-d.pdf
MJD42CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11-1G description mjd44h11-d.pdf
MJD44H11-1G
Hersteller: onsemi
Description: TRANS NPN 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
75+0.76 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G mjd44h11-d.pdf
MJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.44 EUR
5000+0.41 EUR
7500+0.39 EUR
12500+0.37 EUR
17500+0.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD45H11-1G description mjd44h11-d.pdf
MJD45H11-1G
Hersteller: onsemi
Description: TRANS PNP 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJD45H11T4G description mjd44h11-d.pdf
MJD45H11T4G
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.45 EUR
5000+0.41 EUR
7500+0.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD47T4G mjd47-d.pdf
MJD47T4G
Hersteller: onsemi
Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
auf Bestellung 18077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.15 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD50T4G mjd47-d.pdf
MJD50T4G
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 41177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
MJE13005G description mje13005-d.pdf
MJE13005G
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE13007G description mje13007-d.pdf
MJE13007G
Hersteller: onsemi
Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 7366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
50+1.36 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.81 EUR
5000+0.74 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJE13009G description mje13009-d.pdf
MJE13009G
Hersteller: onsemi
Description: TRANS NPN 400V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE15028G mje15028-d.pdf
MJE15028G
Hersteller: onsemi
Description: TRANS NPN 120V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 50 W
auf Bestellung 2207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
50+1.6 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.04 EUR
2000+0.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15029G mje15028-d.pdf
MJE15029G
Hersteller: onsemi
Description: TRANS PNP 120V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 50 W
auf Bestellung 4650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
50+2.08 EUR
100+1.87 EUR
500+1.51 EUR
1000+1.39 EUR
2000+1.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MJE15030G mje15028-d.pdf
MJE15030G
Hersteller: onsemi
Description: TRANS NPN 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 3168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
50+1.55 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.01 EUR
2000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15031G mje15028-d.pdf
MJE15031G
Hersteller: onsemi
Description: TRANS PNP 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 4402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
50+1.56 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.02 EUR
2000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15032G mje15032-d.pdf
MJE15032G
Hersteller: onsemi
Description: TRANS NPN 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 23422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
500+1.09 EUR
1000+1 EUR
2000+0.93 EUR
5000+0.85 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15033G mje15032-d.pdf
MJE15033G
Hersteller: onsemi
Description: TRANS PNP 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 350142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
500+1.09 EUR
1000+1 EUR
2000+0.93 EUR
5000+0.85 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15034G mje15034-d.pdf
MJE15034G
Hersteller: onsemi
Description: TRANS NPN 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
50+1.54 EUR
100+1.38 EUR
500+1.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE15035G mje15034-d.pdf
MJE15035G
Hersteller: onsemi
Description: TRANS PNP 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 1784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
50+1.6 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE170G mje171-d.pdf
MJE170G
Hersteller: onsemi
Description: TRANS PNP 40V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
auf Bestellung 10573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
16+1.11 EUR
100+0.76 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.52 EUR
5000+0.47 EUR
10000+0.46 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
MJE171G mje171-d.pdf
MJE171G
Hersteller: onsemi
Description: TRANS PNP 60V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
auf Bestellung 5490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
12+1.53 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.72 EUR
2000+0.66 EUR
5000+0.6 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MJE18004G description mje18004-d.pdf
MJE18004G
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
auf Bestellung 743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
50+1.59 EUR
100+1.42 EUR
500+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJE18008G mje18008-d.pdf
MJE18008G
Hersteller: onsemi
Description: TRANS NPN 450V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 900mA, 4.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 125 W
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
50+2.43 EUR
100+2.19 EUR
500+1.78 EUR
1000+1.65 EUR
2000+1.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MJE180G mje171-d.pdf
MJE180G
Hersteller: onsemi
Description: TRANS NPN 40V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.67 EUR
100+1.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJE181G mje171-d.pdf
MJE181G
Hersteller: onsemi
Description: TRANS NPN 60V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
auf Bestellung 522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.15 EUR
100+0.75 EUR
500+0.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJE200G mje200-d.pdf
MJE200G
Hersteller: onsemi
Description: TRANS NPN 40V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
auf Bestellung 4161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.53 EUR
Mindestbestellmenge: 10
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MJE210G mje210-d.pdf
MJE210G
Hersteller: onsemi
Description: TRANS PNP 40V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
Produkt ist nicht verfügbar
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MJE243G mje243-d.pdf
MJE243G
Hersteller: onsemi
Description: TRANS NPN 100V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJE253G mje243-d.pdf
MJE253G
Hersteller: onsemi
Description: TRANS PNP 100V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 10100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.55 EUR
2000+0.5 EUR
5000+0.45 EUR
10000+0.42 EUR
Mindestbestellmenge: 10
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MJE270G mje270-d.pdf
MJE270G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.31 EUR
100+0.86 EUR
500+0.67 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MJE2955TG mje2955t-d.pdf
MJE2955TG
Hersteller: onsemi
Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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MJE3055TG description mje2955t-d.pdf
MJE3055TG
Hersteller: onsemi
Description: TRANS NPN 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
auf Bestellung 49324 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
50+1.03 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
2000+0.6 EUR
5000+0.54 EUR
10000+0.51 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MJE340G description mje340-d.pdf
MJE340G
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
auf Bestellung 14247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
19+0.93 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.42 EUR
2000+0.38 EUR
5000+0.34 EUR
10000+0.32 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
MJE3439G mje3439-d.pdf
MJE3439G
Hersteller: onsemi
Description: TRANS NPN 350V 0.3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 15 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE344G mje344-d.pdf
MJE344G
Hersteller: onsemi
Description: TRANS NPN 200V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 20 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE350G mje350-d.pdf
MJE350G
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
auf Bestellung 8442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.56 EUR
5000+0.5 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MJE371G mje371-d.pdf
MJE371G
Hersteller: onsemi
Description: TRANS PNP 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
13+1.36 EUR
500+0.9 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
MJE4343G mje4343-d.pdf
MJE4343G
Hersteller: onsemi
Description: TRANS NPN 160V 16A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE4353G mje4343-d.pdf
MJE4353G
Hersteller: onsemi
Description: TRANS PNP 160V 16A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: SOT-93
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE5730G mje5730-d.pdf
MJE5730G
Hersteller: onsemi
Description: TRANS PNP 300V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 40 W
auf Bestellung 1426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
50+1.35 EUR
100+1.22 EUR
500+0.99 EUR
1000+0.91 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJE5731AG mje5730-d.pdf
MJE5731AG
Hersteller: onsemi
Description: TRANS PNP 375V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 40 W
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
50+1.39 EUR
100+1.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJE5742G mje5740-d.pdf
MJE5742G
Hersteller: onsemi
Description: TRANS NPN DARL 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
50+2.03 EUR
100+1.82 EUR
500+1.46 EUR
1000+1.35 EUR
2000+1.25 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MJE5850G mje5850-d.pdf
MJE5850G
Hersteller: onsemi
Description: TRANS PNP 300V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 80 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE5851G mje5850-d.pdf
MJE5851G
Hersteller: onsemi
Description: TRANS PNP 350V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 80 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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