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74VHCT540AMTC 74VHCT540AMTC onsemi 74VHCT540A.pdf Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
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74VHCT541AMTC 74VHCT541AMTC onsemi 74vhct541a-d.pdf Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
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74VHCT541AMTCX 74VHCT541AMTCX onsemi 74vhct541a-d.pdf Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
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74VHCT573AMTC 74VHCT573AMTC onsemi 74vhct573a-d.pdf Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
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74VHCT573AMTCX 74VHCT573AMTCX onsemi 74vhct573a-d.pdf Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Part Status: Active
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BSR56 BSR56 onsemi BSR56.pdf Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 250 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
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FAN2558S25X FAN2558S25X onsemi fan2558-d.pdf Description: IC REG LINEAR 2.5V 180MA SOT23-5
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FDS6982as FDS6982as onsemi fds6982as-d.pdf Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FDS8333C FDS8333C onsemi FDS8333C.pdf Description: MOSFET N/P-CH 30V 4.1A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
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FDS9934C FDS9934C onsemi fds9934c-d.pdf Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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FDS9953A FDS9953A onsemi fds9953a-d.pdf Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
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74ACT541MTCX 74ACT541MTCX onsemi 74ACT541-D.PDF Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
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2N3820_D26Z 2N3820_D26Z onsemi 2N3820.pdf Description: JFET P-CH 20V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
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2N5461_D26Z 2N5461_D26Z onsemi 2N5460 Rev5.pdf Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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2N5461_D74Z 2N5461_D74Z onsemi 2N5460 Rev5.pdf Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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2N5461_L99Z 2N5461_L99Z onsemi 2N5460%20Rev5.pdf Description: JFET P-CH 40V TO92
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 9 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
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2N5462_D27Z 2N5462_D27Z onsemi 2N5460%20Rev5.pdf Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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2N5639_D26Z 2N5639_D26Z onsemi 2N5639.pdf Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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FAN6520AIM FAN6520AIM onsemi FAN6520A.pdf Description: IC REG CTRLR BUCK 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Enable
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Topology: Buck
Frequency - Switching: 300kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2N5246_D74Z 2N5246_D74Z onsemi 2N5246.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
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2N5457_D27Z 2N5457_D27Z onsemi 2N5457-59%2C%20MMBF5457-59.pdf Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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2N5457_D75Z 2N5457_D75Z onsemi 2N5457-59%2C%20MMBF5457-59.pdf Description: JFET N-CH 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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2N5457_L99Z 2N5457_L99Z onsemi 2N5457-59%2C%20MMBF5457-59.pdf Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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2N5458_D26Z 2N5458_D26Z onsemi 2N5457-59%2C%20MMBF5457-59.pdf Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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2N5458_D27Z 2N5458_D27Z onsemi 2N5457-59%2C%20MMBF5457-59.pdf Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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2N5555_D74Z 2N5555_D74Z onsemi 2N5555.pdf Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 25 V
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2N5638_D26Z 2N5638_D26Z onsemi 2N5638.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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2N5639_D75Z 2N5639_D75Z onsemi 2N5639.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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2N5950 2N5950 onsemi 2N5950.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
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2N5950_J18Z 2N5950_J18Z onsemi 2N5950.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
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2N5951_D27Z 2N5951_D27Z onsemi 2N5951.pdf Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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2N5952_D74Z 2N5952_D74Z onsemi 2N5952.pdf Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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74VCXH245WMX 74VCXH245WMX onsemi 74VCXH245.pdf Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
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BF244B BF244B onsemi BF244x.pdf Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
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BF247A BF247A onsemi BF247x.pdf Description: JFET N-CH 25V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 25 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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BF256B BF256B onsemi BF256B.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 30 V
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BF256C BF256C onsemi BF256x.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 18mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
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FDS9933 FDS9933 onsemi FDS9933.pdf Description: MOSFET 2P-CH 20V 5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74ABT244CPC 74ABT244CPC onsemi 74ABT244.pdf Description: IC BUFF NON-INVERT 5.5V 20DIP
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Through Hole
Output Type: 3-State
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
Supplier Device Package: 20-PDIP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 4
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74ACT273PC 74ACT273PC onsemi 74ACT273%2C%2074ACT273%20Rev2008.pdf Description: IC FF D-TYPE SINGLE 8BIT 20PDIP
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Supplier Device Package: 20-PDIP
Input Capacitance: 4.5 pF
Clock Frequency: 189 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Through Hole
Output Type: Non-Inverted
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
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FDC2612 FDC2612 onsemi FDC2612-D.PDF Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDC3512 FDC3512 onsemi fdc3512-d.pdf Description: MOSFET N-CH 80V 3A SUPERSOT6
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
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FDC3601N FDC3601N onsemi FDC3601N-D.PDF Description: MOSFET 2N-CH 100V 1A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 100V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDC3612 FDC3612 onsemi fdc3612-d.pdf Description: MOSFET N-CH 100V 2.6A SUPERSOT6
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
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FDC602P FDC602P onsemi FDC602P-D.PDF Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V
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FDC606P FDC606P onsemi FDC606P-D.PDF Description: MOSFET P-CH 12V 6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1699 pF @ 6 V
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FDC6310P FDC6310P onsemi fdc6310p-d.pdf Description: MOSFET 2P-CH 20V 2.2A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
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FDC6312P FDC6312P onsemi FDC6312P-D.pdf Description: MOSFET 2P-CH 20V 2.3A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDC6318P FDC6318P onsemi fdc6318p-d.pdf Description: MOSFET 2P-CH 12V 2.5A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDC6321C FDC6321C onsemi FDC6321C-D.PDF Description: MOSFET N/P-CH 25V 0.68A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
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FDC6323L FDC6323L onsemi fdc6323l-d.pdf Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 3V ~ 8V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDC6324L FDC6324L onsemi FDC6324L-D.PDF Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
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FDC6325L FDC6325L onsemi fdc6325l-d.pdf Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 2.5V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 115mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDC6326L FDC6326L onsemi fdc6326l-d.pdf Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Rds On (Typ): 95mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): 2.5V ~ 8V
Voltage - Load: 3V ~ 20V
Input Type: Non-Inverting
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FDC6327C FDC6327C onsemi FDC6327C-D.PDF Description: MOSFET N/P-CH 20V 2.7A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
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FDC6329L FDC6329L onsemi FDC6329L-D.PDF Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
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FDC6330L FDC6330L onsemi FDC6330L-D.PDF Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
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FDC6331L FDC6331L onsemi fdc6331l-d.pdf Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
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FDC6332L FDC6332L onsemi FDC6332L.pdf Description: IC PWR DRVR P-CH 1:1 SUPERSOT-6
Current - Output (Max): 1A
Voltage - Load: 1.8V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 230mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
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FDC636P FDC636P onsemi FDC636P.pdf Description: MOSFET P-CH 20V 2.8A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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74VHCT540AMTC 74VHCT540A.pdf
74VHCT540AMTC
Hersteller: onsemi
Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
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74VHCT541AMTC 74vhct541a-d.pdf
74VHCT541AMTC
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
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74VHCT541AMTCX 74vhct541a-d.pdf
74VHCT541AMTCX
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74VHCT573AMTC 74vhct573a-d.pdf
74VHCT573AMTC
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
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74VHCT573AMTCX 74vhct573a-d.pdf
74VHCT573AMTCX
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.63 EUR
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BSR56 BSR56.pdf
BSR56
Hersteller: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 250 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
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FAN2558S25X fan2558-d.pdf
FAN2558S25X
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 180MA SOT23-5
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FDS6982as fds6982as-d.pdf
FDS6982as
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FDS8333C FDS8333C.pdf
FDS8333C
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 4.1A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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FDS9934C fds9934c-d.pdf
FDS9934C
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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FDS9953A fds9953a-d.pdf
FDS9953A
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
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74ACT541MTCX 74ACT541-D.PDF
74ACT541MTCX
Hersteller: onsemi
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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2N3820_D26Z 2N3820.pdf
2N3820_D26Z
Hersteller: onsemi
Description: JFET P-CH 20V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Produkt ist nicht verfügbar
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2N5461_D26Z 2N5460 Rev5.pdf
2N5461_D26Z
Hersteller: onsemi
Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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2N5461_D74Z 2N5460 Rev5.pdf
2N5461_D74Z
Hersteller: onsemi
Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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2N5461_L99Z 2N5460%20Rev5.pdf
2N5461_L99Z
Hersteller: onsemi
Description: JFET P-CH 40V TO92
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 9 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Produkt ist nicht verfügbar
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2N5462_D27Z 2N5460%20Rev5.pdf
2N5462_D27Z
Hersteller: onsemi
Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N5639_D26Z 2N5639.pdf
2N5639_D26Z
Hersteller: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FAN6520AIM FAN6520A.pdf
FAN6520AIM
Hersteller: onsemi
Description: IC REG CTRLR BUCK 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Enable
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Topology: Buck
Frequency - Switching: 300kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N5246_D74Z 2N5246.pdf
2N5246_D74Z
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
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2N5457_D27Z 2N5457-59%2C%20MMBF5457-59.pdf
2N5457_D27Z
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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2N5457_D75Z 2N5457-59%2C%20MMBF5457-59.pdf
2N5457_D75Z
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
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2N5457_L99Z 2N5457-59%2C%20MMBF5457-59.pdf
2N5457_L99Z
Hersteller: onsemi
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
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2N5458_D26Z 2N5457-59%2C%20MMBF5457-59.pdf
2N5458_D26Z
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
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2N5458_D27Z 2N5457-59%2C%20MMBF5457-59.pdf
2N5458_D27Z
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
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2N5555_D74Z 2N5555.pdf
2N5555_D74Z
Hersteller: onsemi
Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 25 V
Produkt ist nicht verfügbar
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2N5638_D26Z 2N5638.pdf
2N5638_D26Z
Hersteller: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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2N5639_D75Z 2N5639.pdf
2N5639_D75Z
Hersteller: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
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2N5950 2N5950.pdf
2N5950
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
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2N5950_J18Z 2N5950.pdf
2N5950_J18Z
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
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2N5951_D27Z 2N5951.pdf
2N5951_D27Z
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
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2N5952_D74Z 2N5952.pdf
2N5952_D74Z
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
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74VCXH245WMX 74VCXH245.pdf
74VCXH245WMX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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BF244B BF244x.pdf
BF244B
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
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BF247A BF247x.pdf
BF247A
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 25 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
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BF256B BF256B.pdf
BF256B
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
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BF256C BF256x.pdf
BF256C
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 18mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
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FDS9933 FDS9933.pdf
FDS9933
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74ABT244CPC 74ABT244.pdf
74ABT244CPC
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20DIP
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Through Hole
Output Type: 3-State
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
Supplier Device Package: 20-PDIP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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74ACT273PC 74ACT273%2C%2074ACT273%20Rev2008.pdf
74ACT273PC
Hersteller: onsemi
Description: IC FF D-TYPE SINGLE 8BIT 20PDIP
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Supplier Device Package: 20-PDIP
Input Capacitance: 4.5 pF
Clock Frequency: 189 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Through Hole
Output Type: Non-Inverted
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FDC2612 FDC2612-D.PDF
FDC2612
Hersteller: onsemi
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC3512 fdc3512-d.pdf
FDC3512
Hersteller: onsemi
Description: MOSFET N-CH 80V 3A SUPERSOT6
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
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3000+0.61 EUR
6000+0.58 EUR
9000+0.56 EUR
15000+0.55 EUR
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FDC3601N FDC3601N-D.PDF
FDC3601N
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 100V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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3000+0.46 EUR
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FDC3612 fdc3612-d.pdf
FDC3612
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.6A SUPERSOT6
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
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3000+0.42 EUR
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FDC602P FDC602P-D.PDF
FDC602P
Hersteller: onsemi
Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V
Produkt ist nicht verfügbar
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FDC606P FDC606P-D.PDF
FDC606P
Hersteller: onsemi
Description: MOSFET P-CH 12V 6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1699 pF @ 6 V
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3000+0.56 EUR
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FDC6310P fdc6310p-d.pdf
FDC6310P
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.2A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
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3000+0.44 EUR
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FDC6312P FDC6312P-D.pdf
FDC6312P
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.3A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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3000+0.55 EUR
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FDC6318P fdc6318p-d.pdf
FDC6318P
Hersteller: onsemi
Description: MOSFET 2P-CH 12V 2.5A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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3000+0.51 EUR
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FDC6321C FDC6321C-D.PDF
FDC6321C
Hersteller: onsemi
Description: MOSFET N/P-CH 25V 0.68A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
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3000+0.45 EUR
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FDC6323L fdc6323l-d.pdf
FDC6323L
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 3V ~ 8V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC6324L FDC6324L-D.PDF
FDC6324L
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
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3000+0.45 EUR
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FDC6325L fdc6325l-d.pdf
FDC6325L
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 2.5V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 115mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC6326L fdc6326l-d.pdf
FDC6326L
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Rds On (Typ): 95mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): 2.5V ~ 8V
Voltage - Load: 3V ~ 20V
Input Type: Non-Inverting
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3000+0.86 EUR
6000+0.83 EUR
15000+0.82 EUR
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FDC6327C FDC6327C-D.PDF
FDC6327C
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.7A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Produkt ist nicht verfügbar
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FDC6329L FDC6329L-D.PDF
FDC6329L
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.61 EUR
6000+0.6 EUR
Mindestbestellmenge: 3000 Stücke
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FDC6330L FDC6330L-D.PDF
FDC6330L
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
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FDC6331L fdc6331l-d.pdf
FDC6331L
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.49 EUR
6000+0.48 EUR
15000+0.46 EUR
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FDC6332L FDC6332L.pdf
FDC6332L
Hersteller: onsemi
Description: IC PWR DRVR P-CH 1:1 SUPERSOT-6
Current - Output (Max): 1A
Voltage - Load: 1.8V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 230mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: SuperSOT™-6
Ratio - Input:Output: 1:1
Produkt ist nicht verfügbar
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FDC636P FDC636P.pdf
FDC636P
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.8A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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