Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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74VHCT541AMTCX | onsemi |
Description: IC BUF NON-INVERT 5.5V 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP |
Produkt ist nicht verfügbar |
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74VHCT573AMTC | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP Packaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5.1ns Supplier Device Package: 20-TSSOP |
Produkt ist nicht verfügbar |
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74VHCT573AMTCX | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5.1ns Supplier Device Package: 20-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
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BSR56 | onsemi | Description: JFET N-CH 40V 250MW SOT23 |
Produkt ist nicht verfügbar |
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FAN2558S25X | onsemi | Description: IC REG LINEAR 2.5V 180MA SOT23-5 |
Produkt ist nicht verfügbar |
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FDS6982as | onsemi | Description: MOSFET 2N-CH 30V 6.3A/8.6A 8-SO |
Produkt ist nicht verfügbar |
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FDS9934C | onsemi |
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS9953A | onsemi |
Description: MOSFET 2P-CH 30V 2.9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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74ACT541MTCX | onsemi |
Description: IC BUF NON-INVERT 5.5V 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
Produkt ist nicht verfügbar |
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2N3820_D26Z | onsemi | Description: JFET P-CH 20V 0.35W TO92 |
Produkt ist nicht verfügbar |
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2N5461_D26Z | onsemi |
Description: JFET P-CH 40V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-92-3 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5461_D74Z | onsemi |
Description: JFET P-CH 40V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-92-3 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5461_L99Z | onsemi |
Description: JFET P-CH 40V TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -65°C ~ 135°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-92 (TO-226) Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 9 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5462_D27Z | onsemi |
Description: JFET P-CH 40V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-92-3 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5639_D26Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 350 mW Resistance - RDS(On): 60 Ohms Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V |
Produkt ist nicht verfügbar |
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FAN6520AIM | onsemi |
Description: IC REG CTRLR BUCK 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Supplier Device Package: 8-SOIC Synchronous Rectifier: Yes Control Features: Enable Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: No Part Status: Obsolete Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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2N5246_D74Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 7mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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2N5457_D27Z | onsemi |
Description: JFET N-CH 25V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92-3 Part Status: Obsolete Power - Max: 625 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5457_D75Z | onsemi |
Description: JFET N-CH 25V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92-3 Part Status: Obsolete Power - Max: 625 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5457_L99Z | onsemi |
Description: JFET N-CH 25V TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: 135°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 310 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5458_D26Z | onsemi |
Description: JFET N-CH 25V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92-3 Part Status: Obsolete Power - Max: 625 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5458_D27Z | onsemi |
Description: JFET N-CH 25V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92-3 Part Status: Obsolete Power - Max: 625 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5555_D74Z | onsemi |
Description: RF MOSFET JFET 25V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 15mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 25 V |
Produkt ist nicht verfügbar |
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2N5638_D26Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 350 mW Resistance - RDS(On): 30 Ohms Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V |
Produkt ist nicht verfügbar |
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2N5639_D75Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 350 mW Resistance - RDS(On): 60 Ohms Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V |
Produkt ist nicht verfügbar |
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2N5950 | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Current Rating (Amps): 15mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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2N5950_J18Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Current Rating (Amps): 15mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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2N5951_D27Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 13mA Mounting Type: Through Hole Frequency: 1kHz Configuration: N-Channel Technology: JFET Noise Figure: 2dB Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V Voltage - Test: 15 V |
Produkt ist nicht verfügbar |
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2N5952_D74Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 8mA Mounting Type: Through Hole Frequency: 1kHz Configuration: N-Channel Technology: JFET Noise Figure: 2dB Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V Voltage - Test: 15 V |
Produkt ist nicht verfügbar |
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BF244B | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Current Rating (Amps): 50mA Mounting Type: Through Hole Frequency: 100MHz Configuration: N-Channel Technology: JFET Noise Figure: 1.5dB Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V Voltage - Test: 15 V |
Produkt ist nicht verfügbar |
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BF247A | onsemi |
Description: JFET N-CH 25V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92-3 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V |
Produkt ist nicht verfügbar |
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BF256B | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Current Rating (Amps): 13mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Part Status: Active Voltage - Rated: 30 V |
auf Bestellung 5991 Stücke: Lieferzeit 21-28 Tag (e) |
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BF256C | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Current Rating (Amps): 18mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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FDS9933 | onsemi |
Description: MOSFET 2P-CH 20V 5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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74ACT273PC | onsemi | Description: IC FF D-TYPE SNGL 8BIT 20DIP |
Produkt ist nicht verfügbar |
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FAN5018BMTCX | onsemi |
Description: IC REG CTRLR HI CUR 1OUT 28TSSOP Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Voltage - Output: 0.5V ~ 3.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 12V Operating Temperature: 0°C ~ 85°C Applications: Controller, High-Current, Implementing Low-Voltage CPU Core Power Circuits Supplier Device Package: 28-TSSOP |
Produkt ist nicht verfügbar |
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FDC2612 | onsemi |
Description: MOSFET N-CH 200V 1.1A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V |
Produkt ist nicht verfügbar |
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FDC3512 | onsemi |
Description: MOSFET N-CH 80V 3A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V |
auf Bestellung 78000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC3601N | onsemi |
Description: MOSFET 2N-CH 100V 1A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC3612 | onsemi |
Description: MOSFET N-CH 100V 2.6A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDC602P | onsemi |
Description: MOSFET P-CH 20V 5.5A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V |
auf Bestellung 4090 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC606P | onsemi |
Description: MOSFET P-CH 12V 6A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1699 pF @ 6 V |
Produkt ist nicht verfügbar |
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FDC6310P | onsemi |
Description: MOSFET 2P-CH 20V 2.2A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 132000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6312P | onsemi |
Description: MOSFET 2P-CH 20V 2.3A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V Rds On (Max) @ Id, Vgs: 115mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6318P | onsemi |
Description: MOSFET 2P-CH 12V 2.5A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6321C | onsemi |
Description: MOSFET N/P-CH 25V 0.68A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6323L | onsemi | Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 |
Produkt ist nicht verfügbar |
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FDC6324L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 20V Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: SuperSOT™-6 Part Status: Active |
Produkt ist nicht verfügbar |
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FDC6326L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 95mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 20V Voltage - Supply (Vcc/Vdd): 2.5V ~ 8V Current - Output (Max): 1.8A Ratio - Input:Output: 1:1 Supplier Device Package: SuperSOT™-6 Part Status: Active |
Produkt ist nicht verfügbar |
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FDC6327C | onsemi |
Description: MOSFET N/P-CH 20V 2.7A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 14800 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6329L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 47mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 8V Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V Current - Output (Max): 2.5A Ratio - Input:Output: 1:1 Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |
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FDC6330L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 54mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 20V Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V Current - Output (Max): 2.3A Ratio - Input:Output: 1:1 Supplier Device Package: SuperSOT™-6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6331L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 8V Current - Output (Max): 2.8A Ratio - Input:Output: 1:1 Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |
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FDC637AN | onsemi |
Description: MOSFET N-CH 20V 6.2A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6401N | onsemi |
Description: MOSFET 2N-CH 20V 3A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |
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FDC640P | onsemi |
Description: MOSFET P-CH 20V 4.5A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6420C | onsemi |
Description: MOSFET N/P-CH 20V 3A/2.2A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A, 2.2A Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC642P | onsemi |
Description: MOSFET P-CH 20V 4A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC645N | onsemi |
Description: MOSFET N-CH 30V 5.5A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC654P | onsemi |
Description: MOSFET P-CH 30V 3.6A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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74VHCT541AMTCX |
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
74VHCT573AMTC |
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
74VHCT573AMTCX |
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
FAN2558S25X |
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 180MA SOT23-5
Description: IC REG LINEAR 2.5V 180MA SOT23-5
Produkt ist nicht verfügbar
FDS6982as |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
Produkt ist nicht verfügbar
FDS9934C |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.82 EUR |
5000+ | 0.78 EUR |
FDS9953A |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
74ACT541MTCX |
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
2N5461_D26Z |
Hersteller: onsemi
Description: JFET P-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET P-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
2N5461_D74Z |
Hersteller: onsemi
Description: JFET P-CH 40V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET P-CH 40V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
2N5461_L99Z |
Hersteller: onsemi
Description: JFET P-CH 40V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 135°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92 (TO-226)
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 9 mA @ 15 V
Description: JFET P-CH 40V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 135°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92 (TO-226)
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 9 mA @ 15 V
Produkt ist nicht verfügbar
2N5462_D27Z |
Hersteller: onsemi
Description: JFET P-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Description: JFET P-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Produkt ist nicht verfügbar
2N5639_D26Z |
Hersteller: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
FAN6520AIM |
Hersteller: onsemi
Description: IC REG CTRLR BUCK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BUCK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
2N5246_D74Z |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
2N5457_D27Z |
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
2N5457_D75Z |
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar
2N5457_L99Z |
Hersteller: onsemi
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
2N5458_D26Z |
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
2N5458_D27Z |
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
2N5555_D74Z |
Hersteller: onsemi
Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 25 V
Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 25 V
Produkt ist nicht verfügbar
2N5638_D26Z |
Hersteller: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Produkt ist nicht verfügbar
2N5639_D75Z |
Hersteller: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
2N5950 |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
2N5950_J18Z |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
2N5951_D27Z |
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
2N5952_D74Z |
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
BF244B |
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
BF247A |
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Description: JFET N-CH 25V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Produkt ist nicht verfügbar
BF256B |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 30 V
auf Bestellung 5991 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.86 EUR |
37+ | 0.7 EUR |
41+ | 0.65 EUR |
100+ | 0.48 EUR |
250+ | 0.44 EUR |
500+ | 0.36 EUR |
1000+ | 0.27 EUR |
2500+ | 0.25 EUR |
5000+ | 0.23 EUR |
BF256C |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 18mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 18mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
FDS9933 |
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FAN5018BMTCX |
Hersteller: onsemi
Description: IC REG CTRLR HI CUR 1OUT 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 0.5V ~ 3.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, High-Current, Implementing Low-Voltage CPU Core Power Circuits
Supplier Device Package: 28-TSSOP
Description: IC REG CTRLR HI CUR 1OUT 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 0.5V ~ 3.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, High-Current, Implementing Low-Voltage CPU Core Power Circuits
Supplier Device Package: 28-TSSOP
Produkt ist nicht verfügbar
FDC2612 |
Hersteller: onsemi
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Produkt ist nicht verfügbar
FDC3512 |
Hersteller: onsemi
Description: MOSFET N-CH 80V 3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
Description: MOSFET N-CH 80V 3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
auf Bestellung 78000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.86 EUR |
6000+ | 0.81 EUR |
9000+ | 0.75 EUR |
30000+ | 0.74 EUR |
FDC3601N |
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2N-CH 100V 1A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.52 EUR |
FDC3612 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Description: MOSFET N-CH 100V 2.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Produkt ist nicht verfügbar
FDC602P |
Hersteller: onsemi
Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V
auf Bestellung 4090 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
FDC606P |
Hersteller: onsemi
Description: MOSFET P-CH 12V 6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1699 pF @ 6 V
Description: MOSFET P-CH 12V 6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1699 pF @ 6 V
Produkt ist nicht verfügbar
FDC6310P |
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2P-CH 20V 2.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 132000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
6000+ | 0.52 EUR |
9000+ | 0.48 EUR |
30000+ | 0.47 EUR |
FDC6312P |
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.3A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2P-CH 20V 2.3A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.53 EUR |
6000+ | 0.5 EUR |
FDC6318P |
Hersteller: onsemi
Description: MOSFET 2P-CH 12V 2.5A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2P-CH 12V 2.5A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.77 EUR |
6000+ | 0.73 EUR |
9000+ | 0.68 EUR |
FDC6321C |
Hersteller: onsemi
Description: MOSFET N/P-CH 25V 0.68A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET N/P-CH 25V 0.68A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.49 EUR |
6000+ | 0.47 EUR |
9000+ | 0.44 EUR |
FDC6323L |
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Produkt ist nicht verfügbar
FDC6324L |
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
Produkt ist nicht verfügbar
FDC6326L |
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 8V
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 8V
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
Produkt ist nicht verfügbar
FDC6327C |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.7A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET N/P-CH 20V 2.7A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 14800 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.44 EUR |
6000+ | 0.41 EUR |
9000+ | 0.39 EUR |
FDC6329L |
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Produkt ist nicht verfügbar
FDC6330L |
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.58 EUR |
FDC6331L |
Hersteller: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Produkt ist nicht verfügbar
FDC637AN |
Hersteller: onsemi
Description: MOSFET N-CH 20V 6.2A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 10 V
Description: MOSFET N-CH 20V 6.2A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.72 EUR |
6000+ | 0.69 EUR |
9000+ | 0.64 EUR |
FDC6401N |
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2N-CH 20V 3A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Produkt ist nicht verfügbar
FDC640P |
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.46 EUR |
6000+ | 0.44 EUR |
FDC6420C |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3A/2.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET N/P-CH 20V 3A/2.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
6000+ | 0.52 EUR |
FDC642P |
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 10 V
Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.44 EUR |
6000+ | 0.42 EUR |
FDC645N |
Hersteller: onsemi
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
FDC654P |
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
Description: MOSFET P-CH 30V 3.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.41 EUR |
6000+ | 0.39 EUR |
9000+ | 0.36 EUR |