| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FIN1031MTCX | ONSEMI |
 Category: Interfaces others - integrated circuitsDescription: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC Mounting: SMD Operating temperature: -40...85°C Kind of integrated circuit: differential; line driver; translator Type of integrated circuit: digital Technology: LVDS Case: TSSOP16 Supply voltage: 3...3.6V DC Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
FIN1032MTCX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; line receiver,differential,translator; LVDS; SMD Mounting: SMD Operating temperature: -40...85°C Kind of integrated circuit: differential; line receiver; translator Type of integrated circuit: digital Technology: LVDS Case: TSSOP16 Supply voltage: 3...3.6V DC Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FIN1031MX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: driver; LVTTL; LVDS; SOIC16; Ch: 4; 3÷3.6V Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: driver Technology: LVTTL Interface: LVDS Case: SOIC16 Number of receivers: 0 Supply voltage: 3...3.6V Number of channels: 4 Data transfer rate: 400Mbps |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV7344AD13R2G | ONSEMI |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 5Mbps; SOIC8; -40÷150°C; No.of rec: 1 Operating temperature: -40...150°C Mounting: SMD Case: SOIC8 Kind of integrated circuit: transceiver DC supply current: 45mA Number of receivers: 1 Data transfer rate: 5Mbps Application: automotive industry Interface: CAN Type of integrated circuit: interface |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
| TL431ACDG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: tube Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TL431ACDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MMUN2211LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
SMMUN2211LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
NDS0605 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.18A; 0.36W; SOT23 Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.18A Gate charge: 2.5nC Power dissipation: 0.36W On-state resistance: 5Ω Gate-source voltage: ±20V |
auf Bestellung 8158 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
NDS0610 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23 Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.12A Power dissipation: 0.36W On-state resistance: 10Ω |
auf Bestellung 2376 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MOC3071M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3071M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3071M |
auf Bestellung 1072 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MOC3073M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3073M |
auf Bestellung 321 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MOC3072M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3072M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3072M |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| MOC3073SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3073M Slew rate: 1kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3072SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3072M Slew rate: 1kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3072SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3072M Kind of package: reel; tape Conform to the norm: VDE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3072SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3072M Kind of package: tube Conform to the norm: VDE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3072TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3072M Kind of package: tube Conform to the norm: VDE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3073SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3073M Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3073SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3073M Kind of package: reel; tape Conform to the norm: VDE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3073SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3073M Kind of package: tube Conform to the norm: VDE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MC78L05ABPRMG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; MC78L00A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 Operating temperature: -40...125°C Tolerance: ±4% Input voltage: 7...20V Voltage drop: 1.7V Manufacturer series: MC78L00A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
FDD86367 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 227W Case: DPAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 669 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| FDD86367-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 227W Case: DPAK3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP10120A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Case: TO220-2 Kind of package: tube Max. forward voltage: 1.75V Load current: 10A Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP1065A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Case: TO220-2 Kind of package: tube Max. forward voltage: 1.75V Load current: 15A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP1065B-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Case: TO220-2 Kind of package: tube Max. forward voltage: 1.7V Load current: 10A Max. off-state voltage: 650V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP1265A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Case: TO220-2 Kind of package: tube Max. forward voltage: 1.75V Load current: 15A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP15120A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Max. forward voltage: 1.75V Load current: 15A Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MJ15024G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
MMBT5087LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 50mA Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...800 Mounting: SMD Kind of package: reel; tape Frequency: 40MHz |
auf Bestellung 459 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| NSVMMBT5087LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 50mA Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...800 Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| KSC5027OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 3A Power dissipation: 50W Case: TO220AB Current gain: 20...40 Mounting: THT Kind of package: tube Frequency: 15MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMS4D0N12C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8 Mounting: SMD Case: PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 82nC Kind of package: reel; tape On-state resistance: 8.8mΩ Gate-source voltage: ±20V Power dissipation: 106W Drain current: 114A Drain-source voltage: 120V Pulsed drain current: 628A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
NTD2955T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Pulsed drain current: -18A Drain current: -12A Gate charge: 15nC On-state resistance: 0.18Ω Power dissipation: 55W Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 1781 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| FUSB15201VMNWTWG | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C Supply voltage: 3...5.5V Interface: I2C Frequency: 24MHz Mounting: SMD Operating temperature: -40...105°C DC supply current: 330µA Type of integrated circuit: interface Case: QFN24 Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
FOD2711ASDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Mounting: SMD Kind of output: transistor Number of channels: 1 CTR@If: 100-200%@10mA Insulation voltage: 5kV Case: SO8 Type of optocoupler: optocoupler |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FOD2711A | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Mounting: THT Kind of output: transistor Number of channels: 1 CTR@If: 100-200%@10mA Insulation voltage: 5kV Case: DIP8 Type of optocoupler: optocoupler |
auf Bestellung 792 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| KSD2012GTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Collector current: 3A Power dissipation: 25W Collector-emitter voltage: 60V Current gain: 150...320 Frequency: 3MHz Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
|
KSC1845FTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.5W Case: TO92 Formed Current gain: 300...600 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FQD11P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.95A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQD17P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1789 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FQA36P15 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -25.5A Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 467 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FQP47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQD8P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1534 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQD7P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1797 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FQB22P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -15.6A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3384 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQP17P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FQT7N10LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.36A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2562 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQD3P50TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQB34P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 322 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQD12N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1224 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
  |
FDMC2523P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8 Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.8A Power dissipation: 42W Case: MLP8 Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQB12P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FQPF47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -21.2A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQB47P06TM-AM002 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQA70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 49.5A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQD13N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 919 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQD19N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.8A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2077 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FQT4N20LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3128 Stücke: Lieferzeit 14-21 Tag (e) |
|
| FIN1031MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: differential; line driver; translator
Type of integrated circuit: digital
Technology: LVDS
Case: TSSOP16
Supply voltage: 3...3.6V DC
Number of channels: 4
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: differential; line driver; translator
Type of integrated circuit: digital
Technology: LVDS
Case: TSSOP16
Supply voltage: 3...3.6V DC
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FIN1032MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: differential; line receiver; translator
Type of integrated circuit: digital
Technology: LVDS
Case: TSSOP16
Supply voltage: 3...3.6V DC
Number of channels: 4
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: differential; line receiver; translator
Type of integrated circuit: digital
Technology: LVDS
Case: TSSOP16
Supply voltage: 3...3.6V DC
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FIN1031MX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: driver; LVTTL; LVDS; SOIC16; Ch: 4; 3÷3.6V
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: LVTTL
Interface: LVDS
Case: SOIC16
Number of receivers: 0
Supply voltage: 3...3.6V
Number of channels: 4
Data transfer rate: 400Mbps
Category: Interfaces others - integrated circuits
Description: IC: driver; LVTTL; LVDS; SOIC16; Ch: 4; 3÷3.6V
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: LVTTL
Interface: LVDS
Case: SOIC16
Number of receivers: 0
Supply voltage: 3...3.6V
Number of channels: 4
Data transfer rate: 400Mbps
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV7344AD13R2G |
|
Hersteller: ONSEMI
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5Mbps; SOIC8; -40÷150°C; No.of rec: 1
Operating temperature: -40...150°C
Mounting: SMD
Case: SOIC8
Kind of integrated circuit: transceiver
DC supply current: 45mA
Number of receivers: 1
Data transfer rate: 5Mbps
Application: automotive industry
Interface: CAN
Type of integrated circuit: interface
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5Mbps; SOIC8; -40÷150°C; No.of rec: 1
Operating temperature: -40...150°C
Mounting: SMD
Case: SOIC8
Kind of integrated circuit: transceiver
DC supply current: 45mA
Number of receivers: 1
Data transfer rate: 5Mbps
Application: automotive industry
Interface: CAN
Type of integrated circuit: interface
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| TL431ACDG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TL431ACDR2G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2211LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMMUN2211LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NDS0605 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.18A; 0.36W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.18A
Gate charge: 2.5nC
Power dissipation: 0.36W
On-state resistance: 5Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.18A; 0.36W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.18A
Gate charge: 2.5nC
Power dissipation: 0.36W
On-state resistance: 5Ω
Gate-source voltage: ±20V
auf Bestellung 8158 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 334+ | 0.21 EUR |
| 505+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| 723+ | 0.099 EUR |
| 817+ | 0.088 EUR |
| 1000+ | 0.078 EUR |
| 3000+ | 0.068 EUR |
| 6000+ | 0.063 EUR |
| NDS0610 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.12A
Power dissipation: 0.36W
On-state resistance: 10Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.12A
Power dissipation: 0.36W
On-state resistance: 10Ω
auf Bestellung 2376 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 382+ | 0.19 EUR |
| 487+ | 0.15 EUR |
| 539+ | 0.13 EUR |
| 665+ | 0.11 EUR |
| 1000+ | 0.098 EUR |
| MOC3071M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3071M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3071M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3071M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3071M
auf Bestellung 1072 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 126+ | 0.57 EUR |
| 149+ | 0.48 EUR |
| 162+ | 0.44 EUR |
| 500+ | 0.41 EUR |
| MOC3073M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3073M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3073M
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 60+ | 1.2 EUR |
| 71+ | 1.02 EUR |
| 100+ | 0.94 EUR |
| MOC3072M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| MOC3073SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3072SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3072SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: reel; tape
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: reel; tape
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3072SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3072TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3073SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3073SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3073SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC78L05ABPRMG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Operating temperature: -40...125°C
Tolerance: ±4%
Input voltage: 7...20V
Voltage drop: 1.7V
Manufacturer series: MC78L00A
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Operating temperature: -40...125°C
Tolerance: ±4%
Input voltage: 7...20V
Voltage drop: 1.7V
Manufacturer series: MC78L00A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD86367 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 2.99 EUR |
| 37+ | 1.94 EUR |
| 100+ | 1.54 EUR |
| FDD86367-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FFSP10120A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 10A
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 10A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP1065A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP1065B-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 10A
Max. off-state voltage: 650V
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 10A
Max. off-state voltage: 650V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP1265A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP15120A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Case: TO220-2
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ15024G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.59 EUR |
| 11+ | 6.76 EUR |
| 12+ | 6.35 EUR |
| MMBT5087LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
auf Bestellung 459 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 459+ | 0.16 EUR |
| NSVMMBT5087LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSC5027OTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS4D0N12C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82nC
Kind of package: reel; tape
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Power dissipation: 106W
Drain current: 114A
Drain-source voltage: 120V
Pulsed drain current: 628A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82nC
Kind of package: reel; tape
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Power dissipation: 106W
Drain current: 114A
Drain-source voltage: 120V
Pulsed drain current: 628A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD2955T4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1781 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 1.82 EUR |
| 74+ | 0.97 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.67 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.54 EUR |
| FUSB15201VMNWTWG |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C
Supply voltage: 3...5.5V
Interface: I2C
Frequency: 24MHz
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 330µA
Type of integrated circuit: interface
Case: QFN24
Application: automotive industry
Category: Battery and battery cells controllers
Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C
Supply voltage: 3...5.5V
Interface: I2C
Frequency: 24MHz
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 330µA
Type of integrated circuit: interface
Case: QFN24
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD2711ASDV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: SO8
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: SO8
Type of optocoupler: optocoupler
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 175+ | 0.41 EUR |
| 182+ | 0.39 EUR |
| 188+ | 0.38 EUR |
| FOD2711A |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: DIP8
Type of optocoupler: optocoupler
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: DIP8
Type of optocoupler: optocoupler
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| 167+ | 0.43 EUR |
| 186+ | 0.39 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.37 EUR |
| KSD2012GTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSC1845FTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...600
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...600
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 285+ | 0.25 EUR |
| 308+ | 0.23 EUR |
| FQD11P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 742 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 54+ | 1.33 EUR |
| 63+ | 1.14 EUR |
| 91+ | 0.79 EUR |
| 104+ | 0.69 EUR |
| FQD17P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.11 EUR |
| 90+ | 0.8 EUR |
| 102+ | 0.7 EUR |
| 500+ | 0.64 EUR |
| FQA36P15 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 5.11 EUR |
| 18+ | 4.2 EUR |
| 30+ | 3.56 EUR |
| FQP47P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 24+ | 3.07 EUR |
| 26+ | 2.76 EUR |
| 30+ | 2.43 EUR |
| 50+ | 2.42 EUR |
| FQD8P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1534 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 70+ | 1.02 EUR |
| 80+ | 0.9 EUR |
| 115+ | 0.62 EUR |
| 135+ | 0.53 EUR |
| 500+ | 0.46 EUR |
| FQD7P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1797 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 72+ | 1.01 EUR |
| 94+ | 0.77 EUR |
| 100+ | 0.75 EUR |
| FQB22P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3384 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 31+ | 2.32 EUR |
| 35+ | 2.04 EUR |
| 43+ | 1.7 EUR |
| 50+ | 1.47 EUR |
| 100+ | 1.34 EUR |
| FQP17P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 47+ | 1.52 EUR |
| FQT7N10LTF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2562 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.41 EUR |
| FQD3P50TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 45+ | 1.59 EUR |
| FQB34P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 23+ | 3.2 EUR |
| 26+ | 2.82 EUR |
| 31+ | 2.36 EUR |
| 100+ | 2.23 EUR |
| FQD12N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1224 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 74+ | 0.98 EUR |
| 84+ | 0.86 EUR |
| 113+ | 0.63 EUR |
| 128+ | 0.56 EUR |
| 500+ | 0.47 EUR |
| FDMC2523P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 48+ | 1.5 EUR |
| 53+ | 1.37 EUR |
| 63+ | 1.14 EUR |
| 100+ | 1.06 EUR |
| 250+ | 1 EUR |
| FQB12P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 2.8 EUR |
| 32+ | 2.25 EUR |
| 37+ | 1.97 EUR |
| 50+ | 1.46 EUR |
| 100+ | 1.43 EUR |
| FQPF47P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.2 EUR |
| FQB47P06TM-AM002 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 23+ | 3.17 EUR |
| 26+ | 2.85 EUR |
| 50+ | 2.73 EUR |
| FQA70N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 30+ | 2.42 EUR |
| 31+ | 2.33 EUR |
| FQD13N10LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 80+ | 0.9 EUR |
| 92+ | 0.78 EUR |
| 132+ | 0.54 EUR |
| 153+ | 0.47 EUR |
| 500+ | 0.37 EUR |
| FQD19N10LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2077 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 57+ | 1.27 EUR |
| 65+ | 1.11 EUR |
| 90+ | 0.8 EUR |
| 103+ | 0.7 EUR |
| 500+ | 0.63 EUR |
| FQT4N20LTF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3128 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 106+ | 0.68 EUR |
| 147+ | 0.49 EUR |
| 250+ | 0.44 EUR |