| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FGD3050G2 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ISL9V5045S3ST-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 43A Power dissipation: 300W Case: D2PAK Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
FGP3440G2-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: TO220-3 Mounting: THT Kind of package: tube Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ISL9V3040S3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 17A Power dissipation: 150W Case: D2PAK Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ISL9V3040S3ST-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: D2PAK Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGB3040G2-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: D2PAK Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGD2736G3-F085V | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 360V Collector current: 24.3A Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| US2JA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
NRVUS2JA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP5623BMUTBG | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM Mounting: SMD Supply voltage: 2.7...5.5V DC Operating temperature: -40...85°C Number of channels: 3 Application: for RGB power LED applications Case: LLGA12 Integrated circuit features: PWM Output current: 90mA Output voltage: 4.4...5.7V Type of integrated circuit: driver Interface: I2C Kind of integrated circuit: LED driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
2N6520TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 0.5A Current gain: 30...200 Frequency: 40...200MHz Collector-emitter voltage: 350V |
auf Bestellung 607 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
74AC14SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA Mounting: SMD Number of channels: hex; 6 Case: SO14 Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 40µA Number of inputs: 1 Supply voltage: 2...6V DC Family: AC Kind of package: tube Type of integrated circuit: digital Kind of gate: NOT |
auf Bestellung 654 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
74AC14MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Kind of input: with Schmitt trigger Number of inputs: 1 Family: AC Type of integrated circuit: digital Case: TSSOP14 |
auf Bestellung 1538 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
MC74AC14DTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Kind of input: with Schmitt trigger Number of inputs: 1 Family: AC Technology: CMOS Type of integrated circuit: digital Case: TSSOP14 |
auf Bestellung 1931 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
MC74AC14DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: hex; 6 Kind of gate: NOT Kind of package: tube Kind of input: with Schmitt trigger Number of inputs: 1 Family: AC Technology: CMOS Type of integrated circuit: digital Case: SO14 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
74AC14SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Kind of input: with Schmitt trigger Number of inputs: 1 Family: AC Type of integrated circuit: digital Case: SO14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MC74AC14DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Kind of input: with Schmitt trigger Number of inputs: 1 Family: AC Technology: CMOS Type of integrated circuit: digital Case: SO14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
74ACT14MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Kind of input: with Schmitt trigger Number of inputs: 1 Family: ACT Type of integrated circuit: digital Case: TSSOP14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP59301DS30R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1 Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 3V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP59301DS28R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 2.8V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
MC74HC4538ADG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 800µA |
auf Bestellung 1119 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
MC74HC4538ADR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74HC4538ADTR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
NLV74HC4538ADR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
FDS4501h | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8 Power dissipation: 2.5W Drain current: 9.3/-5.6A Gate-source voltage: ±20/±8V Drain-source voltage: 30/-20V Kind of package: reel; tape On-state resistance: 80/29mΩ Technology: PowerTrench® Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of channel: enhancement Case: SO8 Gate charge: 21/27nC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FFSP20120A | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP152MX280120TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V; 2.8V Output current: 0.15A Case: XDFN6 Mounting: SMD Manufacturer series: NCP152 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 2 Input voltage: 1.9...5.25V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
FQT7N10LTF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.36A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3694 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BC847CWT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
SBC847CWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
SBC847CWT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
FDS6679AZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 14.8mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
FDN352AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.3A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±25V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Features of semiconductor devices: logic level |
auf Bestellung 2960 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
NDS352AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.9A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| NTMFS008N12MCT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 79A Pulsed drain current: 352A Power dissipation: 40W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS5C460NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Pulsed drain current: 352A Power dissipation: 25W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS5C460NWFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Pulsed drain current: 352A Power dissipation: 25W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMYS5D3N04CTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Pulsed drain current: 352A Power dissipation: 25W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
ECH8695R-TL-W | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8 Application: charging control Semiconductor structure: common drain Case: ECH8 Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC On-state resistance: 9.1mΩ Power dissipation: 1.4W Drain current: 11A Gate-source voltage: ±12.5V Drain-source voltage: 24V Pulsed drain current: 60A |
auf Bestellung 2062 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
NSR0620P2T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD923 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. forward impulse current: 1A Kind of package: reel; tape |
auf Bestellung 2673 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| SZESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 4289 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
DF02S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L Kind of package: reel; tape Case: SDIP 4L Load current: 1.5A Max. forward impulse current: 50A Max. off-state voltage: 200V Type of bridge rectifier: single-phase Electrical mounting: SMT |
auf Bestellung 2904 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
1N5956BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 1µA |
auf Bestellung 4964 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
MC74AC125DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: AC Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
MC74AC125DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MC74ACT125DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: ACT Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MC74VHC125DG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer Number of channels: 4 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...5.5V DC Family: VHC Kind of package: tube Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state Manufacturer series: VHC |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
74VHC125MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: CMOS Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...5.5V DC Number of channels: 4 Kind of output: 3-state Manufacturer series: VHC Case: TSSOP14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
FQP17P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Technology: QFET® Mounting: THT Case: TO220AB Kind of package: tube Drain-source voltage: -60V Drain current: -12A Gate charge: 27nC Polarisation: unipolar On-state resistance: 0.12Ω Type of transistor: P-MOSFET Kind of channel: enhancement Gate-source voltage: ±25V Power dissipation: 79W |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
NC7SP17P5X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 0.9...3.6V DC Quiescent current: 0.9µA Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MMBF5457 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 3mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 1773 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
MC74HC73ADG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SO14 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: tube Trigger: negative-edge-triggered |
auf Bestellung 362 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
MC74HC73ADR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SO14 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: negative-edge-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MC74HC73ADTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: negative-edge-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FJA4313OTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P Type of transistor: NPN Kind of package: tube Mounting: THT Power dissipation: 130W Collector current: 17A Collector-emitter voltage: 250V Frequency: 30MHz Case: TO3P Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FGD3050G2 |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V5045S3ST-F085C |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGP3440G2-F085 |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V3040D3ST |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V3040S3ST |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V3040S3ST-F085C |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD3040G2-F085V |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD3040G2-F085 |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGB3040G2-F085C |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD2736G3-F085V |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 24.3A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 24.3A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD3040G2-F085C |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| US2JA |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVUS2JA |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP5623BMUTBG |
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6520TA |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
auf Bestellung 607 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 506+ | 0.14 EUR |
| 607+ | 0.12 EUR |
| 74AC14SC | ![]() |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
auf Bestellung 654 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 168+ | 0.43 EUR |
| 171+ | 0.42 EUR |
| 74AC14MTCX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Type of integrated circuit: digital
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Type of integrated circuit: digital
Case: TSSOP14
auf Bestellung 1538 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 123+ | 0.58 EUR |
| 144+ | 0.5 EUR |
| 180+ | 0.4 EUR |
| 250+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| MC74AC14DTR2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
auf Bestellung 1931 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 133+ | 0.54 EUR |
| 161+ | 0.44 EUR |
| 214+ | 0.33 EUR |
| 253+ | 0.28 EUR |
| MC74AC14DG | ![]() |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 74AC14SCX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Type of integrated circuit: digital
Case: SO14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Type of integrated circuit: digital
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC14DR2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ACT14MTCX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: ACT
Type of integrated circuit: digital
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: ACT
Type of integrated circuit: digital
Case: TSSOP14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP59301DS30R4G |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP59301DS28R4G |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC4538ADG |
![]() |
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 800µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 800µA
auf Bestellung 1119 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 195+ | 0.37 EUR |
| 207+ | 0.35 EUR |
| 208+ | 0.34 EUR |
| MC74HC4538ADR2G |
![]() |
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC4538ADTR2G |
![]() |
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLV74HC4538ADR2G |
![]() |
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS4501h |
![]() |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Power dissipation: 2.5W
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Drain-source voltage: 30/-20V
Kind of package: reel; tape
On-state resistance: 80/29mΩ
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Case: SO8
Gate charge: 21/27nC
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Power dissipation: 2.5W
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Drain-source voltage: 30/-20V
Kind of package: reel; tape
On-state resistance: 80/29mΩ
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Case: SO8
Gate charge: 21/27nC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP20120A |
![]() |
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP152MX280120TCG |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V; 2.8V
Output current: 0.15A
Case: XDFN6
Mounting: SMD
Manufacturer series: NCP152
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 1.9...5.25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V; 2.8V
Output current: 0.15A
Case: XDFN6
Mounting: SMD
Manufacturer series: NCP152
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 1.9...5.25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQT7N10LTF |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3694 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 103+ | 0.7 EUR |
| 120+ | 0.6 EUR |
| 133+ | 0.54 EUR |
| 149+ | 0.48 EUR |
| 250+ | 0.41 EUR |
| BC847CWT3G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBC847CWT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBC847CWT3G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6679AZ |
![]() |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 68+ | 1.07 EUR |
| 82+ | 0.88 EUR |
| 95+ | 0.76 EUR |
| 109+ | 0.66 EUR |
| FDN352AP |
![]() |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
auf Bestellung 2960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 161+ | 0.45 EUR |
| 212+ | 0.34 EUR |
| 240+ | 0.3 EUR |
| 283+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| NDS352AP |
![]() |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 163+ | 0.44 EUR |
| 215+ | 0.33 EUR |
| 242+ | 0.3 EUR |
| 283+ | 0.25 EUR |
| NTMFS008N12MCT1G |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C460NT1G |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C460NWFT1G |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS5D3N04CTWG |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ECH8695R-TL-W |
![]() |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8
Application: charging control
Semiconductor structure: common drain
Case: ECH8
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
On-state resistance: 9.1mΩ
Power dissipation: 1.4W
Drain current: 11A
Gate-source voltage: ±12.5V
Drain-source voltage: 24V
Pulsed drain current: 60A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8
Application: charging control
Semiconductor structure: common drain
Case: ECH8
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
On-state resistance: 9.1mΩ
Power dissipation: 1.4W
Drain current: 11A
Gate-source voltage: ±12.5V
Drain-source voltage: 24V
Pulsed drain current: 60A
auf Bestellung 2062 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 100+ | 0.72 EUR |
| 143+ | 0.5 EUR |
| 500+ | 0.41 EUR |
| NSR0620P2T5G |
![]() |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD923
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD923
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 2673 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 506+ | 0.14 EUR |
| 695+ | 0.1 EUR |
| 758+ | 0.094 EUR |
| SZESD9X5.0ST5G |
![]() |
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5956BT3G |
![]() |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 4289 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 417+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 618+ | 0.12 EUR |
| DF02S |
![]() |
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Kind of package: reel; tape
Case: SDIP 4L
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 200V
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Kind of package: reel; tape
Case: SDIP 4L
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 200V
Type of bridge rectifier: single-phase
Electrical mounting: SMT
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 153+ | 0.47 EUR |
| 184+ | 0.39 EUR |
| 199+ | 0.36 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.29 EUR |
| 1N5956BRLG |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
auf Bestellung 4964 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 468+ | 0.15 EUR |
| 496+ | 0.14 EUR |
| MC74AC125DTR2G |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 161+ | 0.45 EUR |
| 183+ | 0.39 EUR |
| 224+ | 0.32 EUR |
| 250+ | 0.31 EUR |
| MC74AC125DR2G |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT125DR2G |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC125DG |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Manufacturer series: VHC
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 116+ | 0.62 EUR |
| 139+ | 0.52 EUR |
| 145+ | 0.49 EUR |
| 74VHC125MTCX | ![]() |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: VHC
Case: TSSOP14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: VHC
Case: TSSOP14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP17P06 |
![]() |
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Technology: QFET®
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: -60V
Drain current: -12A
Gate charge: 27nC
Polarisation: unipolar
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±25V
Power dissipation: 79W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Technology: QFET®
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: -60V
Drain current: -12A
Gate charge: 27nC
Polarisation: unipolar
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±25V
Power dissipation: 79W
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| NC7SP17P5X |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBF5457 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1773 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 323+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| 368+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| MC74HC73ADG |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: negative-edge-triggered
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 172+ | 0.42 EUR |
| 191+ | 0.38 EUR |
| 205+ | 0.35 EUR |
| MC74HC73ADR2G |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC73ADTR2G |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJA4313OTU |
![]() |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Power dissipation: 130W
Collector current: 17A
Collector-emitter voltage: 250V
Frequency: 30MHz
Case: TO3P
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Power dissipation: 130W
Collector current: 17A
Collector-emitter voltage: 250V
Frequency: 30MHz
Case: TO3P
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH






















