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FFSP2065BDN-F085 FFSP2065BDN-F085 ONSEMI ffsp2065bdn-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward voltage: 1.7V
Technology: SiC
Application: automotive industry
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NCP551SN30T1G NCP551SN30T1G ONSEMI ncp551-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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D44VH10G D44VH10G ONSEMI D44VH10.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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MC74HC00ADR2G MC74HC00ADR2G ONSEMI MC74HC00ADR2G.PDF Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
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MM74HC00M MM74HC00M ONSEMI MM74HC00.pdf description Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Quiescent current: 20µA
Kind of package: tube
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
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MC74HC00ADG MC74HC00ADG ONSEMI MC74HC00ADG.PDF Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of package: tube
Delay time: 15ns
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
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MC74HC00ADTR2G MC74HC00ADTR2G ONSEMI MC74HC00A-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: reel; tape
Delay time: 15ns
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
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MM74HC00MTCX MM74HC00MTCX ONSEMI MM74HC00-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: reel; tape
Delay time: 8ns
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
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MM74HC00MX MM74HC00MX ONSEMI MM74HC00-D.pdf description Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 8ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of package: reel; tape
Delay time: 8ns
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
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MM74HCT00MTCX MM74HCT00MTCX ONSEMI MM74HCT00-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Delay time: 14ns
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BZX84C3V9LT1G BZX84C3V9LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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SBAT54CLT1G SBAT54CLT1G ONSEMI bat54clt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
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BAT54CTT1G ONSEMI BAT54CTT1-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
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BAT54CXV3T1G ONSEMI BAT54CXV3-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
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1N4448WS 1N4448WS ONSEMI 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
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NUP2105LT1G NUP2105LT1G ONSEMI NUP2105L.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Application: CAN
Kind of package: reel; tape
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MOC3020SM ONSEMI FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf de93287-moc3020_21_22_23-220622.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
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MOC3020SR2M ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
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MOC3020TVM MOC3020TVM ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
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MOC3020VM MOC3020VM ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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TIP120G TIP120G ONSEMI TIP12xG.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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SDTC114EET1G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
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NGTB25N120FL2WG NGTB25N120FL2WG ONSEMI NGTB25N120FL2WG.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
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NGTB25N120FL3WG ONSEMI ngtb25n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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DTA114EET1G DTA114EET1G ONSEMI DTA114E-D.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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DTA114EM3T5G DTA114EM3T5G ONSEMI DTA114E-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
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MMBT4403LT3G MMBT4403LT3G ONSEMI mmbt4403lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 600mA; 225mW; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23-3
Current gain: 100
Mounting: SMD
Frequency: 200MHz
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MC14001UBDG MC14001UBDG ONSEMI MC14001B-D.pdf description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 100ns
Family: HEF4000B
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MM3Z3V3T1G MM3Z3V3T1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
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MMSZ5240BT1G MMSZ5240BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
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SZMMSZ5240BT1G SZMMSZ5240BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
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FOD817SD FOD817SD ONSEMI FOD817SD.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Manufacturer series: FOD817
Mounting: SMD
Collector-emitter voltage: 70V
CTR@If: 300-600%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Case: SO4
Turn-off time: 4µs
Number of channels: 1
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MC74VHCT50ADR2G MC74VHCT50ADR2G ONSEMI mc74vhc50-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Manufacturer series: VHCT
Mounting: SMD
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
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MAX809TTRG ONSEMI max809s-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.1V
Number of channels: 1
Integrated circuit features: watchdog
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FOD817D3SD FOD817D3SD ONSEMI FOD817ASD.pdf FOD817D3SD.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
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FFB2907A FFB2907A ONSEMI Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 0.3W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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FMB2907A FMB2907A ONSEMI mmpq2907a-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.7W; TSOT23-6
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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PZT2907AT3G PZT2907AT3G ONSEMI pzt2907at1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Current gain: 100...300
Produkt ist nicht verfügbar
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FMB2222A FMB2222A ONSEMI FFB2222A%2C%20FMB2222A%2C%20MMPQ2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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MMBT5089LT1G MMBT5089LT1G ONSEMI MMBT5088L_MMBT5089L.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 400...1200
Frequency: 50MHz
Collector current: 50mA
Collector-emitter voltage: 25V
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SMMBT5089LT1G SMMBT5089LT1G ONSEMI mmbt5088lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 400...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BC560CG BC560CG ONSEMI BC560C-D.PDF description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power: 0.5W
Case: TO92
Mounting: THT
Frequency: 150MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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BC549CG BC549CG ONSEMI BC549B-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power: 0.5W
Case: TO92
Mounting: THT
Frequency: 300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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ESD9L5.0ST5G ESD9L5.0ST5G ONSEMI ESD9L5.0ST5G.PDF Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5.4V; unidirectional; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
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1SMB5920BT3G 1SMB5920BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
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1N5341BRLG 1N5341BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
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MMBTA63LT1G MMBTA63LT1G ONSEMI mmbta63lt1-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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74VHC32MTCX 74VHC32MTCX ONSEMI 74VHC32-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
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MC74VHCT125ADTRG MC74VHCT125ADTRG ONSEMI mc74vhct125a-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of package: reel; tape
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BZX84C2V7LT1G BZX84C2V7LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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FDB0260N1007L ONSEMI FDB0260N1007L-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Drain-source voltage: 100V
Drain current: 200A
Case: D2PAK-7
Polarisation: unipolar
Power dissipation: 250W
Gate charge: 84nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.6mΩ
Mounting: SMD
Pulsed drain current: 1100A
Produkt ist nicht verfügbar
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FDBL0260N100 ONSEMI FDBL0260N100-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Drain-source voltage: 100V
Drain current: 200A
Case: H-PSOF8L
Polarisation: unipolar
Power dissipation: 250W
Gate charge: 83nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Pulsed drain current: 1kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MOCD207M MOCD207M ONSEMI MOCD207M.PDF description Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
Produkt ist nicht verfügbar
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MBR230LSFT1G MBR230LSFT1G ONSEMI MBR230LSft1g.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. load current: 4A
Kind of package: reel; tape
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MBT3904DW1T1G MBT3904DW1T1G ONSEMI MBT3904DW1.PDF Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MBT3904DW1T3G MBT3904DW1T3G ONSEMI mbt3904dw1t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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MBT3904DW1T1H ONSEMI Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBT3904DW1T1G ONSEMI mbt3904dw1t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MBR3100RLG MBR3100RLG ONSEMI mbr3100-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: reel; tape
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1N5236B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 1N52xxB
Case: CASE017AG
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Type of diode: Zener
Manufacturer series: 1N52xxB
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 7.5V
Produkt ist nicht verfügbar
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FFSP2065BDN-F085 ffsp2065bdn-f085-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward voltage: 1.7V
Technology: SiC
Application: automotive industry
Produkt ist nicht verfügbar
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NCP551SN30T1G ncp551-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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D44VH10G D44VH10.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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MC74HC00ADR2G MC74HC00ADR2G.PDF
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
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MM74HC00M description MM74HC00.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Quiescent current: 20µA
Kind of package: tube
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
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MC74HC00ADG MC74HC00ADG.PDF
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of package: tube
Delay time: 15ns
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
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MC74HC00ADTR2G MC74HC00A-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: reel; tape
Delay time: 15ns
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Technology: CMOS
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MM74HC00MTCX MM74HC00-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: reel; tape
Delay time: 8ns
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
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MM74HC00MX description MM74HC00-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 8ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of package: reel; tape
Delay time: 8ns
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
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MM74HCT00MTCX MM74HCT00-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Delay time: 14ns
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BZX84C3V9LT1G BZX84B_BZX84C.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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SBAT54CLT1G bat54clt1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
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BAT54CTT1G BAT54CTT1-D.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
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BAT54CXV3T1G BAT54CXV3-D.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
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1N4448WS 1N4148WS.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
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NUP2105LT1G NUP2105L.PDF
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Application: CAN
Kind of package: reel; tape
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MOC3020SM FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf de93287-moc3020_21_22_23-220622.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
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MOC3020SR2M moc3023m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
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MOC3020TVM moc3023m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
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MOC3020VM moc3023m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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TIP120G TIP12xG.PDF
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 399 Stücke:
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SDTC114EET1G dtc114e-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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NGTB25N120FL2WG NGTB25N120FL2WG.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
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NGTB25N120FL3WG ngtb25n120fl3w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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DTA114EET1G description DTA114E-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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DTA114EM3T5G DTA114E-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
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MMBT4403LT3G mmbt4403lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 600mA; 225mW; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23-3
Current gain: 100
Mounting: SMD
Frequency: 200MHz
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MC14001UBDG description MC14001B-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 100ns
Family: HEF4000B
Produkt ist nicht verfügbar
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MM3Z3V3T1G MM3ZxxT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
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MMSZ5240BT1G MMSZ52xxT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
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SZMMSZ5240BT1G MMSZ52xxT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
auf Bestellung 2135 Stücke:
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FOD817SD FOD817SD.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Manufacturer series: FOD817
Mounting: SMD
Collector-emitter voltage: 70V
CTR@If: 300-600%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Case: SO4
Turn-off time: 4µs
Number of channels: 1
auf Bestellung 2110 Stücke:
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MC74VHCT50ADR2G mc74vhc50-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Manufacturer series: VHCT
Mounting: SMD
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
auf Bestellung 168 Stücke:
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MAX809TTRG max809s-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.1V
Number of channels: 1
Integrated circuit features: watchdog
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Mindestbestellmenge: 3000 Stücke
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FOD817D3SD FOD817ASD.pdf FOD817D3SD.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
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FFB2907A
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 0.3W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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FMB2907A mmpq2907a-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.7W; TSOT23-6
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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PZT2907AT3G pzt2907at1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Current gain: 100...300
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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FMB2222A FFB2222A%2C%20FMB2222A%2C%20MMPQ2222A.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2498 Stücke:
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MMBT5089LT1G MMBT5088L_MMBT5089L.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 400...1200
Frequency: 50MHz
Collector current: 50mA
Collector-emitter voltage: 25V
auf Bestellung 5776 Stücke:
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SMMBT5089LT1G mmbt5088lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 400...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BC560CG description BC560C-D.PDF
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power: 0.5W
Case: TO92
Mounting: THT
Frequency: 150MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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BC549CG BC549B-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power: 0.5W
Case: TO92
Mounting: THT
Frequency: 300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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ESD9L5.0ST5G ESD9L5.0ST5G.PDF
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5.4V; unidirectional; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 3205 Stücke:
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1SMB5920BT3G 1SMB59xxBT3G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
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1N5341BRLG description 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
auf Bestellung 384 Stücke:
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MMBTA63LT1G mmbta63lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3072 Stücke:
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74VHC32MTCX 74VHC32-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
auf Bestellung 4509 Stücke:
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MC74VHCT125ADTRG mc74vhct125a-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of package: reel; tape
auf Bestellung 19 Stücke:
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BZX84C2V7LT1G BZX84B_BZX84C.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
auf Bestellung 6860 Stücke:
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FDB0260N1007L FDB0260N1007L-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Drain-source voltage: 100V
Drain current: 200A
Case: D2PAK-7
Polarisation: unipolar
Power dissipation: 250W
Gate charge: 84nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.6mΩ
Mounting: SMD
Pulsed drain current: 1100A
Produkt ist nicht verfügbar
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FDBL0260N100 FDBL0260N100-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Drain-source voltage: 100V
Drain current: 200A
Case: H-PSOF8L
Polarisation: unipolar
Power dissipation: 250W
Gate charge: 83nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Pulsed drain current: 1kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MOCD207M description MOCD207M.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
Produkt ist nicht verfügbar
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MBR230LSFT1G MBR230LSft1g.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. load current: 4A
Kind of package: reel; tape
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MBT3904DW1T1G MBT3904DW1.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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MBT3904DW1T3G mbt3904dw1t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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MBT3904DW1T1H
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBT3904DW1T1G mbt3904dw1t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MBR3100RLG mbr3100-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: reel; tape
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1N5236B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 1N52xxB
Case: CASE017AG
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Type of diode: Zener
Manufacturer series: 1N52xxB
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 7.5V
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