KSD1616AGTA ON Semiconductor
auf Bestellung 5639 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1859+ | 0.078 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details KSD1616AGTA ON Semiconductor
Description: TRANS NPN 60V 1A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 160MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 750 mW.
Weitere Produktangebote KSD1616AGTA nach Preis ab 0.15 EUR bis 0.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
KSD1616AGTA | Hersteller : onsemi |
 Description: TRANS NPN 60V 1A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 160MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
KSD1616AGTA | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Transistor |
auf Bestellung 7579 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
KSD1616AGTA | Hersteller : onsemi |
Description: TRANS NPN 60V 1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 160MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW |
auf Bestellung 1147 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
KSD1616AGTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 528 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
KSD1616AGTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
KSD1616AGTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
KSD1616AGTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
KSD1616AGTA | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Case: TO92 Formed Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 200...400 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
KSD1616AGTA | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Case: TO92 Formed Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 200...400 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar |
Produkt ist nicht verfügbar |