| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SZMM5Z4717T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5Z4xxxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SZMM5Z5V1T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC79M15CDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 |
auf Bestellung 2029 Stücke: Lieferzeit 14-21 Tag (e) |
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MC79M15CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC79M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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MC79M15BDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC79M15BTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC1496BDR2G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: modulator/demodulator Type of integrated circuit: modulator/demodulator |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP114BSN330T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD Manufacturer series: NCP114 Operating temperature: -40...85°C Voltage drop: 0.135V Output current: 0.225A Output voltage: 3.3V Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: TSSOP5 Type of integrated circuit: voltage regulator |
auf Bestellung 1320 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCPF16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDC610PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Gate charge: 13nC On-state resistance: 75mΩ Gate-source voltage: ±25V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
auf Bestellung 462 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CAT5113VI-00-GT3 | ONSEMI |
Category: Digital potentiometersDescription: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD Resistance: 100kΩ Mounting: SMD Operating temperature: -40...85°C Interface: Up/Down Protocol Type of integrated circuit: digital potentiometer Kind of memory: non-volatile Case: SO8 Max DNL: ±0.5LSB Number of channels: 1 Max INL: ±1LSB Supply voltage: 2.5...6V Converter resolution: 5bit Number of positions: 100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTR4501NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 8181 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4503NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.73W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2846 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7001C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Kind of package: reel; tape Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.51/-0.34A Gate charge: 1.5/2.2nC Power dissipation: 0.96W On-state resistance: 4/10Ω Gate-source voltage: ±20V Case: SuperSOT-6 |
auf Bestellung 1248 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC3601N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 976mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP115ASN180T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD Case: TSOP5 Mounting: SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...85°C Output current: 0.3A Number of channels: 1 Input voltage: 1.7...5.5V Output voltage: 1.8V Tolerance: ±2% Manufacturer series: NCP115 Type of integrated circuit: voltage regulator |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP115AMX330TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD Case: XDFN4 Mounting: SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...85°C Output current: 0.3A Number of channels: 1 Input voltage: 1.7...5.5V Output voltage: 3.3V Tolerance: ±2% Manufacturer series: NCP115 Type of integrated circuit: voltage regulator |
auf Bestellung 505 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP115ASN150T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.5V Output current: 0.3A Case: TSOP5 Mounting: SMD Manufacturer series: NCP115 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP115AMX105TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD Mounting: SMD Operating temperature: -40...85°C Manufacturer series: NCP115 Kind of package: reel; tape Case: XDFN4 Type of integrated circuit: voltage regulator Output current: 0.3A Output voltage: 1.05V Input voltage: 1.7...5.5V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP115ASN180T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Mounting: SMD Kind of package: reel; tape Case: TSOP5 Operating temperature: -40...85°C Output current: 0.3A Number of channels: 1 Tolerance: ±2% Input voltage: 1.7...5.5V Output voltage: 1.8V Manufacturer series: NCP115 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NRVTS245ESFT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.65V Max. load current: 4A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NRVTS245ESFT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.65V Max. load current: 4A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NRVTS1545EMFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 30A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NRVB1045MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NRVB1045MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry Max. load current: 20A |
Produkt ist nicht verfügbar |
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| NRVTS1245EMFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 12A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 24A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NRVTS1245EMFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 12A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 24A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NRVTS1545EMFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 30A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| HCPL4503SDM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: Gull wing 8 Max. off-state voltage: 5V Number of pins: 8 Operating temperature: -40...100°C Manufacturer series: HCPL4503M Load current: 16mA Max. load current: 50mA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB8N90CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |
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FQA8N90C-F109 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| MJD32RLG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
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| MJD32T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
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| GRUMMBT3904LT1G | ONSEMI |
Category: Unclassified Description: GRUMMBT3904LT1G |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDC8886 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Pulsed drain current: 25A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BD439G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Case: TO225 Mounting: THT Frequency: 3MHz Current gain: 40...475 Power dissipation: 36W Kind of package: bulk |
Produkt ist nicht verfügbar |
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| MMSD4148 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.4W Capacitance: 4pF Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SZNUP2105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Kind of package: reel; tape Application: automotive industry Version: ESD |
auf Bestellung 1247 Stücke: Lieferzeit 14-21 Tag (e) |
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| MLISZNUP2105LT1G | ONSEMI |
Category: Unclassified Description: MLISZNUP2105LT1G |
auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RS1GFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NRVHPRS1GFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NRVTSA3100ET3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.995V Max. load current: 6A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NTLUS030N03CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.9A Pulsed drain current: 20A Power dissipation: 1.49W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMS0312AS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 36W Case: Power56 Mounting: SMD Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape Gate charge: 31nC On-state resistance: 6.8mΩ Gate-source voltage: ±20V Drain current: 22A Drain-source voltage: 30V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV8412ASTT1G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5.9A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 On-state resistance: 0.145Ω Supply voltage: 12V Application: automotive industry Active logical level: low Operating temperature: -40...150°C |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBR0540 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGH50T65UPD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 150A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 230nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGHL50T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 94nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGHL50T65LQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 509nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGHL50T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 99nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGHL50T65SQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 99.7nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AFGHL50T65RQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Application: automotive industry Power dissipation: 173W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 65nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AFGHL50T65SQ | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 99nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AFGHL50T65SQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 102nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AFGHL50T65SQDC | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 94nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
MC14050BDR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Type of integrated circuit: digital Mounting: SMD Case: SO16 Operating temperature: -55...125°C Technology: CMOS Kind of integrated circuit: buffer; non-inverting Supply voltage: 3...18V DC Number of channels: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC14050BDTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SZMM5Z4717T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMM5Z5V1T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC79M15CDTRKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 192+ | 0.37 EUR |
| 211+ | 0.34 EUR |
| 243+ | 0.29 EUR |
| MC79M15CTG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 0.6 EUR |
| MC79M15BDTRKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC79M15BTG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC1496BDR2G |
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Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.21 EUR |
| NCP114BSN330T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
auf Bestellung 1320 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 472+ | 0.15 EUR |
| 544+ | 0.13 EUR |
| 642+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 794+ | 0.09 EUR |
| FCP16N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF16N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC610PZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
auf Bestellung 462 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 150+ | 0.48 EUR |
| 215+ | 0.33 EUR |
| 240+ | 0.3 EUR |
| 250+ | 0.29 EUR |
| NCP1246ALD065R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT5113VI-00-GT3 |
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Hersteller: ONSEMI
Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Resistance: 100kΩ
Mounting: SMD
Operating temperature: -40...85°C
Interface: Up/Down Protocol
Type of integrated circuit: digital potentiometer
Kind of memory: non-volatile
Case: SO8
Max DNL: ±0.5LSB
Number of channels: 1
Max INL: ±1LSB
Supply voltage: 2.5...6V
Converter resolution: 5bit
Number of positions: 100
Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Resistance: 100kΩ
Mounting: SMD
Operating temperature: -40...85°C
Interface: Up/Down Protocol
Type of integrated circuit: digital potentiometer
Kind of memory: non-volatile
Case: SO8
Max DNL: ±0.5LSB
Number of channels: 1
Max INL: ±1LSB
Supply voltage: 2.5...6V
Converter resolution: 5bit
Number of positions: 100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTR4501NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8181 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 447+ | 0.16 EUR |
| 599+ | 0.12 EUR |
| 677+ | 0.11 EUR |
| 889+ | 0.081 EUR |
| 1000+ | 0.073 EUR |
| 1500+ | 0.068 EUR |
| 3000+ | 0.067 EUR |
| NTR4503NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2846 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 451+ | 0.16 EUR |
| 544+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 1000+ | 0.094 EUR |
| 1500+ | 0.092 EUR |
| NDC7001C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
Power dissipation: 0.96W
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
Power dissipation: 0.96W
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
auf Bestellung 1248 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 153+ | 0.47 EUR |
| 197+ | 0.36 EUR |
| 271+ | 0.26 EUR |
| 286+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| FDC3601N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 118+ | 0.61 EUR |
| 177+ | 0.4 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.32 EUR |
| NCP115ASN180T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 138+ | 0.51 EUR |
| NCP115AMX330TBG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 329+ | 0.22 EUR |
| 379+ | 0.19 EUR |
| 443+ | 0.16 EUR |
| 505+ | 0.14 EUR |
| NCP115ASN150T2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Produkt ist nicht verfügbar
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| NCP115AMX105TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP115
Kind of package: reel; tape
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1.05V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP115
Kind of package: reel; tape
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1.05V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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| NCP115ASN180T2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
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| NRVTS245ESFT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS245ESFT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1545EMFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVB1045MFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
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| NRVB1045MFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
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| NRVTS1245EMFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1245EMFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1545EMFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| HCPL4503SDM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 8
Max. off-state voltage: 5V
Number of pins: 8
Operating temperature: -40...100°C
Manufacturer series: HCPL4503M
Load current: 16mA
Max. load current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 8
Max. off-state voltage: 5V
Number of pins: 8
Operating temperature: -40...100°C
Manufacturer series: HCPL4503M
Load current: 16mA
Max. load current: 50mA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.65 EUR |
| FQB8N90CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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| FQA8N90C-F109 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| MJD32RLG |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD32T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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| GRUMMBT3904LT1G |
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.018 EUR |
| FDC8886 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BD439G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
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| MMSD4148 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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| SZNUP2105LT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
auf Bestellung 1247 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 481+ | 0.15 EUR |
| 579+ | 0.12 EUR |
| 629+ | 0.11 EUR |
| 701+ | 0.1 EUR |
| 757+ | 0.095 EUR |
| 1000+ | 0.087 EUR |
| MLISZNUP2105LT1G |
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.077 EUR |
| RS1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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| RS1GFA |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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| NRVHPRS1GFA |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| NRVTSA3100ET3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.995V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.995V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| NTLUS030N03CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS0312AS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
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| NCV8412ASTT1G |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.145Ω
Supply voltage: 12V
Application: automotive industry
Active logical level: low
Operating temperature: -40...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.145Ω
Supply voltage: 12V
Application: automotive industry
Active logical level: low
Operating temperature: -40...150°C
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.84 EUR |
| MBR0540 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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| FGH50T65UPD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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| FGHL50T65MQD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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| FGHL50T65LQDT |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
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| FGHL50T65MQDT |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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| FGHL50T65SQDT |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99.7nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99.7nC
Kind of package: tube
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| AFGHL50T65RQDN |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
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| AFGHL50T65SQ |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
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| AFGHL50T65SQD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
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| AFGHL50T65SQDC |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
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| MC14050BDR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 3...18V DC
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 3...18V DC
Number of channels: 6
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| MC14050BDTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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