| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NCP12400CBAAB0DR2G | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: AC/DC switcher; PWM controller Case: SO7 Output current: 0.3...0.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC Frequency: 61...69kHz |
Produkt ist nicht verfügbar |
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| NCP12400CBHAA0DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: AC/DC switcher; PWM controller Case: SO7 Output current: 0.3...0.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC Frequency: 61...69kHz |
Produkt ist nicht verfügbar |
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MOC8050M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Number of channels: 1 Collector-emitter voltage: 80V CTR@If: 500%@10mA Insulation voltage: 4.17kV Kind of output: Darlington Case: DIP6 Type of optocoupler: optocoupler Mounting: THT Turn-on time: 8.5µs Turn-off time: 95µs |
Produkt ist nicht verfügbar |
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1SMA5927BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 841 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZ1SMA5927BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
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1SMA5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 612 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZ1SMA5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
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MJD112G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Mounting: SMD Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Current gain: 100...12000 Polarisation: bipolar |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD112-1G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK Mounting: THT Case: IPAK Kind of transistor: Darlington Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Current gain: 100...12000 Polarisation: bipolar |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Polarisation: bipolar Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 2A Power dissipation: 1.75W Collector-emitter voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MJD112RLG | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of transistor: Darlington Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar |
Produkt ist nicht verfügbar |
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ES1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Leakage current: 0.1mA Power dissipation: 1.47W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SS13 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SS13HE | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 25A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SS13FP | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NCP1010AP100G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 100kHz; Ch: 1; DIP7 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.1A Frequency: 0.1MHz Mounting: THT Case: DIP7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 23Ω Operating voltage: 8.5...10V DC Duty cycle factor: 0...72% Kind of package: tube Application: SMPS |
Produkt ist nicht verfügbar |
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| MC34074DR2G | ONSEMI |
 Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 1487 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC6675BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: WDFN8 Pulsed drain current: -32A Drain-source voltage: -30V Drain current: -20A Gate charge: 65nC On-state resistance: 27mΩ Power dissipation: 36W Gate-source voltage: ±25V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMSZ5237B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMSZ5237BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZMMSZ5237BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| HUF76629D3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK Mounting: SMD Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Gate charge: 39nC On-state resistance: 52mΩ Gate-source voltage: ±16V Drain current: 20A Drain-source voltage: 100V Power dissipation: 150W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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MC14106BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Case: SO14 Mounting: SMD Kind of package: tube Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Number of channels: hex; 6 Kind of gate: NOT Kind of input: with Schmitt trigger Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 1 Supply voltage: 3...18V DC |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 100ns Number of inputs: 1 Supply voltage: 3...18V DC Kind of gate: NOT Technology: CMOS Number of channels: hex; 6 Family: HEF4000B |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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NLV14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Technology: CMOS Type of integrated circuit: digital Mounting: SMD Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Case: TSSOP14 Kind of input: with Schmitt trigger Quiescent current: 30µA Number of inputs: 1 |
Produkt ist nicht verfügbar |
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SBC857ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 60mΩ Power dissipation: 1W Drain current: 2.3A Gate-source voltage: ±8V Drain-source voltage: 20V |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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NLVASB3157DFT2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: SC88A Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -55...125°C Application: automotive industry Kind of output: SPDT Number of channels: 1 |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| NLAS3157MX3TCG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
Produkt ist nicht verfügbar |
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Case: SOD923 Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Peak pulse power dissipation: 0.15W Capacitance: 0.5...0.9pF Version: ESD |
auf Bestellung 7230 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS38 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 80V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
Produkt ist nicht verfügbar |
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563F Drain current: 0.225A Power dissipation: 0.28W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVB0530T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Application: automotive industry Case: SOD123 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Max. forward voltage: 0.43V Load current: 0.5A Max. forward impulse current: 5.5A Max. off-state voltage: 30V |
auf Bestellung 5978 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRM130LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO216AA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.38V Max. forward impulse current: 50A Kind of package: reel; tape Max. load current: 2A |
auf Bestellung 1587 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRM120LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO216AA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 50A Kind of package: reel; tape Max. load current: 2A |
Produkt ist nicht verfügbar |
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NTHL041N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 32.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 108nC |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQD1N60CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FQU1N60CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 4A Gate charge: 6.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCH041N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48.7A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 231A Gate charge: 285nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCH041N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
Produkt ist nicht verfügbar |
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| FCH041N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
Produkt ist nicht verfügbar |
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| NTMT061N60S5F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 41A Power dissipation: 255W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 61mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 146A Gate charge: 76nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DTC123EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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| DTC123EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
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| NSBC123EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
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| NSBC123EPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
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| NSVDTC123EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Application: automotive industry Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
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MBRS190T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape |
auf Bestellung 1348 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP302045MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: MOSFET half-bridge Case: PQFN31 5X5 Mounting: SMD Pulse fall time: 6ns Impulse rise time: 12ns Output current: 45A |
Produkt ist nicht verfügbar |
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 |
FOD3150 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 0...35V |
auf Bestellung 319 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD7181MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape Case: X3DFN2 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 18.5V Breakdown voltage: 20.5...35V Semiconductor structure: bidirectional Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
FDB070AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK Mounting: SMD Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 66nC On-state resistance: 15mΩ Gate-source voltage: ±20V Drain current: 80A Drain-source voltage: 60V Power dissipation: 175W |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV8460ADR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8 Supply voltage: 6...36V DC Application: automotive industry Kind of output: N-Channel Kind of integrated circuit: high-side Kind of package: reel; tape Mounting: SMD Type of integrated circuit: power switch Case: SO8 On-state resistance: 0.4Ω Number of channels: 1 Output current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FDC637BNZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1607BDR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FAN9673Q | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; LQFP32; 15V Type of integrated circuit: PMIC Mounting: SMD Supply voltage: 15V Case: LQFP32 Kind of integrated circuit: PFC controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NC7SZ11P6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: single; 1 Number of inputs: 3 Mounting: SMD Case: SC88A Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Kind of gate: AND |
auf Bestellung 6265 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP032N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 235A Pulsed drain current: 940A Power dissipation: 375W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 169nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDP032N08B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 211A Pulsed drain current: 844A Power dissipation: 263W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV8752BMX18TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Output voltage: 1.8V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP12400CBAAB0DR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO7
Output current: 0.3...0.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Frequency: 61...69kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO7
Output current: 0.3...0.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Frequency: 61...69kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP12400CBHAA0DR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO7
Output current: 0.3...0.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Frequency: 61...69kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO7
Output current: 0.3...0.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Frequency: 61...69kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC8050M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMA5927BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 246+ | 0.29 EUR |
| 277+ | 0.26 EUR |
| 374+ | 0.19 EUR |
| 424+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| SZ1SMA5927BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMA5919BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 264+ | 0.27 EUR |
| 363+ | 0.2 EUR |
| 421+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 589+ | 0.12 EUR |
| SZ1SMA5919BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD112G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Mounting: SMD
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 100...12000
Polarisation: bipolar
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Mounting: SMD
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 100...12000
Polarisation: bipolar
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 112+ | 0.64 EUR |
| 151+ | 0.47 EUR |
| 211+ | 0.34 EUR |
| 229+ | 0.31 EUR |
| MJD112-1G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Mounting: THT
Case: IPAK
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 100...12000
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Mounting: THT
Case: IPAK
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 100...12000
Polarisation: bipolar
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 69+ | 1.04 EUR |
| 80+ | 0.9 EUR |
| 95+ | 0.76 EUR |
| MJD112T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.75W
Collector-emitter voltage: 100V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.75W
Collector-emitter voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD112RLG |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Leakage current: 0.1mA
Power dissipation: 1.47W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Leakage current: 0.1mA
Power dissipation: 1.47W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13HE |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 25A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13FP |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1010AP100G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 100kHz; Ch: 1; DIP7
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 0.1MHz
Mounting: THT
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: tube
Application: SMPS
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 100kHz; Ch: 1; DIP7
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 0.1MHz
Mounting: THT
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: tube
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34074DR2G | |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 1487 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 150+ | 0.48 EUR |
| 162+ | 0.44 EUR |
| 183+ | 0.39 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.33 EUR |
| FDMC6675BZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5237B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5237BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1042+ | 0.069 EUR |
| 1429+ | 0.05 EUR |
| 1651+ | 0.043 EUR |
| 1945+ | 0.037 EUR |
| SZMMSZ5237BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| HUF76629D3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Mounting: SMD
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 39nC
On-state resistance: 52mΩ
Gate-source voltage: ±16V
Drain current: 20A
Drain-source voltage: 100V
Power dissipation: 150W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Mounting: SMD
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 39nC
On-state resistance: 52mΩ
Gate-source voltage: ±16V
Drain current: 20A
Drain-source voltage: 100V
Power dissipation: 150W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14106BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Case: SO14
Mounting: SMD
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Case: SO14
Mounting: SMD
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
Supply voltage: 3...18V DC
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 164+ | 0.44 EUR |
| 171+ | 0.42 EUR |
| MC14106BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of gate: NOT
Technology: CMOS
Number of channels: hex; 6
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of gate: NOT
Technology: CMOS
Number of channels: hex; 6
Family: HEF4000B
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 159+ | 0.45 EUR |
| 172+ | 0.42 EUR |
| 194+ | 0.37 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| NLV14106BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Case: TSSOP14
Kind of input: with Schmitt trigger
Quiescent current: 30µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Case: TSSOP14
Kind of input: with Schmitt trigger
Quiescent current: 30µA
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBC857ALT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTJS3157NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 439+ | 0.16 EUR |
| 667+ | 0.11 EUR |
| 944+ | 0.076 EUR |
| 1064+ | 0.067 EUR |
| 1500+ | 0.06 EUR |
| NLVASB3157DFT2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Application: automotive industry
Kind of output: SPDT
Number of channels: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Application: automotive industry
Kind of output: SPDT
Number of channels: 1
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 191+ | 0.38 EUR |
| 215+ | 0.33 EUR |
| 247+ | 0.29 EUR |
| 500+ | 0.25 EUR |
| NLAS3157MX3TCG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD9L3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
Capacitance: 0.5...0.9pF
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
Capacitance: 0.5...0.9pF
Version: ESD
auf Bestellung 7230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 253+ | 0.28 EUR |
| 300+ | 0.24 EUR |
| 569+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| SS38 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTZD5110NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 421+ | 0.17 EUR |
| 569+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| 1000+ | 0.097 EUR |
| NRVB0530T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
auf Bestellung 5978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 521+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| MBRM130LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 167+ | 0.43 EUR |
| 185+ | 0.39 EUR |
| 272+ | 0.26 EUR |
| 327+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| MBRM120LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL041N60S5H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.35 EUR |
| FQD1N60CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU1N60CTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTMT061N60S5F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 146A
Gate charge: 76nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 146A
Gate charge: 76nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DTC123EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
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| DTC123EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
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Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTC123EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS190T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 180+ | 0.4 EUR |
| 196+ | 0.37 EUR |
| 236+ | 0.3 EUR |
| 258+ | 0.28 EUR |
| 500+ | 0.21 EUR |
| NCP302045MNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3150 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.06 EUR |
| ESD7181MUT5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB070AN06A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 25+ | 2.96 EUR |
| 27+ | 2.67 EUR |
| 28+ | 2.57 EUR |
| NCV8460ADR2G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC637BNZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 162+ | 0.44 EUR |
| 190+ | 0.38 EUR |
| 325+ | 0.22 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| NCP1607BDR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN9673Q |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SZ11P6X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of gate: AND
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of gate: AND
auf Bestellung 6265 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 338+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 439+ | 0.16 EUR |
| 521+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| 3000+ | 0.1 EUR |
| FDP032N08 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP032N08B-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8752BMX18TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH