| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NSS40200LT1G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.71W Collector current: 2A Collector-emitter voltage: 40V Current gain: 250 Frequency: 100MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
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| NSS40300MDR2G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Power dissipation: 0.576W Collector current: 3A Collector-emitter voltage: 40V Current gain: 220 Frequency: 100MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
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| NSS40300DDR2G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Power dissipation: 0.576W Collector current: 3A Collector-emitter voltage: 40V Current gain: 220 Frequency: 100MHz Application: automotive industry Polarisation: bipolar |
Produkt ist nicht verfügbar |
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| 1SS400T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V Type of diode: switching Case: SOD523 Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1.2V Kind of package: reel; tape Features of semiconductor devices: small signal Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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| NXH020F120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| NXH020F120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH020P120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH020P120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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MBRA340T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.39V Kind of package: reel; tape |
auf Bestellung 2363 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74VHC4051DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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HUF75344P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP51460SN33T1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 3.3V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...100°C Kind of package: reel; tape Maximum output current: 20mA Operating voltage: 4.2...28V |
auf Bestellung 2364 Stücke: Lieferzeit 14-21 Tag (e) |
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2N3442G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 10A Power dissipation: 117W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 800kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5402RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; reel,tape; Ifsm: 200A; DO27 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
auf Bestellung 526 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5402G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
Produkt ist nicht verfügbar |
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| BC846BM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265/0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265/0.64W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| US1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NRVUS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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DAN222M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW Capacitance: 3.5pF Mounting: SMD Type of diode: rectifying Case: SOT723 Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Leakage current: 0.1mA Load current: 0.1A Power dissipation: 0.26W Max. forward voltage: 1.2V Max. off-state voltage: 80V Kind of package: reel; tape Semiconductor structure: common cathode; double |
auf Bestellung 6362 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7WZ16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA |
auf Bestellung 1614 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBLS001N06C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L Mounting: SMD Case: H-PSOF8L Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 143nC On-state resistance: 0.9mΩ Power dissipation: 284W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 422A Pulsed drain current: 900A Polarisation: unipolar |
Produkt ist nicht verfügbar |
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BZX84B3V3LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84B |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZBZX84B3V3LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84B Application: automotive industry |
Produkt ist nicht verfügbar |
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NCP43080ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP43080AMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
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NCP43080DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP43080DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP43080DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
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NCP4308DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
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| FAN6248HCMX | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN6248HDMX | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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| FAN6248LDMX | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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| NSVR05F40NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; 0402; SMD; 40V; 0.5A; reel,tape Case: 0402 Mounting: SMD Load current: 0.5A Type of diode: Schottky switching Semiconductor structure: single diode Max. forward impulse current: 10A Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 40V Max. forward voltage: 0.46V |
auf Bestellung 4980 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVR0520V2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape Case: SOD523 Mounting: SMD Load current: 0.5A Type of diode: Schottky switching Semiconductor structure: single diode Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 20V Max. forward voltage: 0.48V |
Produkt ist nicht verfügbar |
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| NSVR0530P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape Case: SOD923 Mounting: SMD Load current: 0.5A Type of diode: Schottky switching Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 30V Max. forward voltage: 0.62V |
Produkt ist nicht verfügbar |
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SBC846BLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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| FSA2269L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA Number of channels: 2 Mounting: SMD Kind of package: reel; tape Kind of output: SPDT x2 Technology: TTL Operating temperature: -40...85°C Quiescent current: 500nA Supply voltage: 1.65...4.5V DC Case: MicroPak10 Type of integrated circuit: analog switch |
Produkt ist nicht verfügbar |
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| SS15 | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMA |
Produkt ist nicht verfügbar |
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| SS15FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape Case: SOD123F |
Produkt ist nicht verfügbar |
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| FDG6301N-F085 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Polarisation: unipolar On-state resistance: 7Ω Drain current: 0.22A Power dissipation: 0.3W Gate-source voltage: ±8V Drain-source voltage: 25V Application: automotive industry Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MJ15024G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
Produkt ist nicht verfügbar |
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MC74HC238ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; TTL; SMD; TSSOP16 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Family: HC Number of inputs: 6 Supply voltage: 2...6V DC Kind of integrated circuit: decoder; demultiplexer Technology: TTL Manufacturer series: HC Kind of package: reel; tape |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC238ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Mounting: SMD Technology: CMOS Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 6 Kind of integrated circuit: decoder; demultiplexer Kind of package: tube Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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MC74HC238ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Mounting: SMD Technology: CMOS Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 6 Kind of integrated circuit: decoder; demultiplexer Kind of package: reel; tape Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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SBAS16HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP2532 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Technology: PowerTrench® Kind of package: tube Polarisation: unipolar Gate charge: 107nC On-state resistance: 14mΩ Drain current: 56A Power dissipation: 310W Drain-source voltage: 150V Gate-source voltage: ±20V |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP2572 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 34nC On-state resistance: 146mΩ Drain current: 20A Power dissipation: 135W Drain-source voltage: 150V Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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FDP2552 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 97mΩ Drain current: 26A Power dissipation: 150W Drain-source voltage: 150V Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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| FDY1002PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F Polarisation: unipolar Drain-source voltage: -20V Drain current: -830mA Power dissipation: 0.625W On-state resistance: 0.85Ω Gate-source voltage: ±8V Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET x2 Kind of package: reel; tape Case: SOT563F |
Produkt ist nicht verfügbar |
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NDT3055L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3888 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD3055L104T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 523 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NTD3055L170T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STDV3055L104T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
FIN1001M5X | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC Technology: LVDS Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3.6V DC Kind of integrated circuit: differential; line driver; translator Case: SOT23-5 |
auf Bestellung 5636 Stücke: Lieferzeit 14-21 Tag (e) |
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FIN1002M5X | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; line receiver,differential,translator; LVDS; SMD Technology: LVDS Type of integrated circuit: digital Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3...3.6V DC Kind of integrated circuit: differential; line receiver; translator Case: SOT23-5 |
auf Bestellung 1562 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SC5706-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 0.8W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| 2SC5706-TL-H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 0.8W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSS40200LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 40V
Current gain: 250
Frequency: 100MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 40V
Current gain: 250
Frequency: 100MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSS40300MDR2G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSS40300DDR2G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Application: automotive industry
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SS400T5G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020F120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020F120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020P120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020P120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRA340T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
auf Bestellung 2363 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 162+ | 0.44 EUR |
| 205+ | 0.35 EUR |
| 227+ | 0.32 EUR |
| 258+ | 0.28 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| MC74VHC4051DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75344P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 24+ | 2.97 EUR |
| NCP51460SN33T1G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 391+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| 562+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2N3442G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5402RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 526 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 248+ | 0.29 EUR |
| 275+ | 0.26 EUR |
| 391+ | 0.18 EUR |
| 1N5402G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC846BM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265/0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265/0.64W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265/0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265/0.64W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 676+ | 0.11 EUR |
| 937+ | 0.076 EUR |
| 1083+ | 0.066 EUR |
| 1502+ | 0.048 EUR |
| 1713+ | 0.042 EUR |
| 2500+ | 0.035 EUR |
| 4000+ | 0.033 EUR |
| 8000+ | 0.029 EUR |
| US1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVUS1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DAN222M3T5G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Capacitance: 3.5pF
Mounting: SMD
Type of diode: rectifying
Case: SOT723
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Capacitance: 3.5pF
Mounting: SMD
Type of diode: rectifying
Case: SOT723
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
auf Bestellung 6362 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2193+ | 0.033 EUR |
| 2632+ | 0.027 EUR |
| 2778+ | 0.026 EUR |
| 2942+ | 0.024 EUR |
| 3106+ | 0.023 EUR |
| 3290+ | 0.022 EUR |
| NC7WZ16P6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
auf Bestellung 1614 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 556+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| 1180+ | 0.061 EUR |
| 1475+ | 0.048 EUR |
| 1614+ | 0.044 EUR |
| NTBLS001N06C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Mounting: SMD
Case: H-PSOF8L
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 143nC
On-state resistance: 0.9mΩ
Power dissipation: 284W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Mounting: SMD
Case: H-PSOF8L
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 143nC
On-state resistance: 0.9mΩ
Power dissipation: 284W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Polarisation: unipolar
Produkt ist nicht verfügbar
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| BZX84B3V3LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| SZBZX84B3V3LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
Application: automotive industry
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| NCP43080ADR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCP43080AMTTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP43080DDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP43080DMNTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP43080DMTTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4308DDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN6248HCMX |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN6248HDMX |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN6248LDMX |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVR05F40NXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 40V; 0.5A; reel,tape
Case: 0402
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 40V
Max. forward voltage: 0.46V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 40V; 0.5A; reel,tape
Case: 0402
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 40V
Max. forward voltage: 0.46V
auf Bestellung 4980 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 234+ | 0.31 EUR |
| 336+ | 0.21 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| NSVR0520V2T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape
Case: SOD523
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 20V
Max. forward voltage: 0.48V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape
Case: SOD523
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 20V
Max. forward voltage: 0.48V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVR0530P2T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Case: SOD923
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 30V
Max. forward voltage: 0.62V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Case: SOD923
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 30V
Max. forward voltage: 0.62V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBC846BLT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSA2269L10X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS15 | |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS15FA |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SOD123F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDG6301N-F085 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 7Ω
Drain current: 0.22A
Power dissipation: 0.3W
Gate-source voltage: ±8V
Drain-source voltage: 25V
Application: automotive industry
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 7Ω
Drain current: 0.22A
Power dissipation: 0.3W
Gate-source voltage: ±8V
Drain-source voltage: 25V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MJ15024G | |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74HC238ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Family: HC
Number of inputs: 6
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Technology: TTL
Manufacturer series: HC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Family: HC
Number of inputs: 6
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Technology: TTL
Manufacturer series: HC
Kind of package: reel; tape
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| MC74HC238ADG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: tube
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: tube
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC238ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: reel; tape
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: reel; tape
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBAS16HT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| SBAS16LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 414+ | 0.17 EUR |
| FDP2532 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Technology: PowerTrench®
Kind of package: tube
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 14mΩ
Drain current: 56A
Power dissipation: 310W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Technology: PowerTrench®
Kind of package: tube
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 14mΩ
Drain current: 56A
Power dissipation: 310W
Drain-source voltage: 150V
Gate-source voltage: ±20V
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.3 EUR |
| 25+ | 2.92 EUR |
| FDP2572 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 146mΩ
Drain current: 20A
Power dissipation: 135W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 146mΩ
Drain current: 20A
Power dissipation: 135W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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| FDP2552 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 97mΩ
Drain current: 26A
Power dissipation: 150W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 97mΩ
Drain current: 26A
Power dissipation: 150W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDY1002PZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -830mA
Power dissipation: 0.625W
On-state resistance: 0.85Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT563F
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -830mA
Power dissipation: 0.625W
On-state resistance: 0.85Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT563F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDT3055L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3888 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 84+ | 0.85 EUR |
| 92+ | 0.78 EUR |
| 120+ | 0.6 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.39 EUR |
| NTD3055L104T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 74+ | 0.97 EUR |
| 81+ | 0.88 EUR |
| 102+ | 0.71 EUR |
| 200+ | 0.64 EUR |
| NTF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 133+ | 0.54 EUR |
| 147+ | 0.49 EUR |
| 200+ | 0.45 EUR |
| NVF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD3055L170T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STDV3055L104T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FIN1001M5X |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Case: SOT23-5
auf Bestellung 5636 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 70+ | 1.03 EUR |
| 77+ | 0.93 EUR |
| 84+ | 0.86 EUR |
| FIN1002M5X |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
auf Bestellung 1562 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 77+ | 0.93 EUR |
| 94+ | 0.76 EUR |
| 125+ | 0.57 EUR |
| 250+ | 0.52 EUR |
| 2SC5706-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC5706-TL-H |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH