| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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MC74ACT74DTR2G | ONSEMI |
 Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES2D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.66W Leakage current: 0.35mA Capacitance: 18pF |
auf Bestellung 2332 Stücke: Lieferzeit 14-21 Tag (e) |
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| ES2DAF | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74HC164ADR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: parallel in Mounting: SMD Case: SOIC14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of channels: 1 Delay time: 250ns Kind of output: push-pull Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC164ADTR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: TSSOP14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of channels: 1 Delay time: 250ns Kind of output: push-pull Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC164BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: SOIC14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of channels: 1 Kind of output: push-pull Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| N93C66BT3ETAG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.7...5.5V Clock frequency: 4MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT93C66VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.8...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV93C66VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV93C66YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FQP9N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF9N90CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
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| TL331SN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TL331VSN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TL331SN4T1G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBR0530 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD13810STU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO126ISO Current gain: 63...160 Mounting: THT Power dissipation: 12.5W Kind of package: tube |
auf Bestellung 1139 Stücke: Lieferzeit 14-21 Tag (e) |
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| BD138G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Current gain: 40...250 Mounting: THT Power dissipation: 12.5W Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MOC3163M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6 Case: DIP6 Output voltage: 600V Number of channels: 1 Mounting: THT Slew rate: 1kV/μs Kind of output: zero voltage crossing driver Insulation voltage: 4.17kV Type of optocoupler: optotriac Trigger current: 5mA Manufacturer series: MOC3163M |
auf Bestellung 1042 Stücke: Lieferzeit 14-21 Tag (e) |
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MB2S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM301ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: single; 1 Mounting: SMT Voltage supply range: ± 5...15V DC Case: SO8 Operating temperature: 0...70°C Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.25µA Input offset current: 50nA Slew rate: 10V/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC14555BDG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3 Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Number of inputs: 3 Kind of package: tube Case: SOIC16 Family: HEF4000B Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer Number of channels: 2 |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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| FSB50450US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Insulation voltage: 1.5kV Power dissipation: 14W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FSB50250AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W Operating temperature: -40...150°C Output current: 1.2A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 13.4W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 500V Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FSB50250US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: PowerSMD Operating voltage: 500V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FSB50450AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Insulation voltage: 1.5kV Power dissipation: 14W Output current: 1.5A DC supply current: 0.2mA Operating temperature: -40...150°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FSB50825AB | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV Mounting: THT Supply voltage: 150V Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Operating temperature: -40...150°C Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: DIP Operating voltage: 250V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FSB50825AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W Mounting: SMD Supply voltage: 150V Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Operating temperature: -40...150°C Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 250V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDD6637 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -35V Drain current: -55A Power dissipation: 57W Case: DPAK Gate-source voltage: ±25V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2304 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Drain current: -7.7A Gate charge: 12.8nC On-state resistance: 25mΩ Power dissipation: 3.3W Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: WDFN6 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -12V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74HC04ADR2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C Technology: CMOS Quiescent current: 2µA Number of inputs: 6 Case: SOIC14 Family: HC Kind of integrated circuit: inverter Number of channels: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape Mounting: SMD Version: ESD Kind of package: reel; tape Semiconductor structure: unidirectional Case: TSOP6 Type of diode: TVS array Number of channels: 2 |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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| SNUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP59301DS30R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1 Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 3V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP59301DS28R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 2.8V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: N Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220 Gate-source voltage: 20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC33067PG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Mounting: THT Case: DIP16 Operating temperature: -40...85°C Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz Topology: flyback Manufacturer series: MC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1SMB5924BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
auf Bestellung 2369 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N5239BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MUR8100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns Max. off-state voltage: 1kV Max. load current: 16A Load current: 8A Case: TO220AC Mounting: THT Kind of package: tube Max. forward impulse current: 100A Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 100ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.5V Features of semiconductor devices: ultrafast switching |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3660S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±12V On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2578 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3664S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86163P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Mounting: SMD Power dissipation: 104W Gate charge: 59nC Polarisation: unipolar Technology: PowerTrench® Drain current: -50A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: PQFN8 On-state resistance: 36mΩ |
auf Bestellung 2471 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8460 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 12A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2419 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8333L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 76A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 250A Gate charge: 64nC |
auf Bestellung 2982 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Pulsed drain current: 60A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2927 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 36A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 78W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 103mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86300 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 122A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 78W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86104 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 73W Case: PQFN8 On-state resistance: 40mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS5352 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 131nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86200DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FDMS7608S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMS86263P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -4.4A Pulsed drain current: -70A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±25V On-state resistance: 64mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMS3604S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 10.8/4mΩ Mounting: SMD Gate charge: 29/66nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Semiconductor structure: asymmetric |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMS1D2N03DSD | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC74ACT74DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ES2D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
auf Bestellung 2332 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 136+ | 0.63 EUR |
| 252+ | 0.33 EUR |
| 334+ | 0.25 EUR |
| 365+ | 0.24 EUR |
| 397+ | 0.21 EUR |
| ES2DAF |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC164ADR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Number of inputs: 2
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC164ADTR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC164BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N93C66BT3ETAG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT93C66VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAV93C66VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAV93C66YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FQP9N90C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.08 EUR |
| 23+ | 3.71 EUR |
| 50+ | 3.53 EUR |
| FQPF9N90CT |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.32 EUR |
| 19+ | 4.52 EUR |
| 23+ | 3.75 EUR |
| TL331SN4T3G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TL331VSN4T3G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TL331SN4T1G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR0530 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BD13810STU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 151+ | 0.57 EUR |
| 167+ | 0.51 EUR |
| 188+ | 0.45 EUR |
| 480+ | 0.4 EUR |
| BD138G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3163M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Trigger current: 5mA
Manufacturer series: MOC3163M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Trigger current: 5mA
Manufacturer series: MOC3163M
auf Bestellung 1042 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 1.04 EUR |
| 103+ | 0.82 EUR |
| 111+ | 0.77 EUR |
| 117+ | 0.74 EUR |
| 122+ | 0.7 EUR |
| 500+ | 0.62 EUR |
| 750+ | 0.6 EUR |
| 1000+ | 0.58 EUR |
| MB2S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 1.63 EUR |
| LM301ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 50nA
Slew rate: 10V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 50nA
Slew rate: 10V/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14555BDG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Number of channels: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Number of channels: 2
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 120+ | 0.71 EUR |
| FSB50450US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50250AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50250US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50450AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
Output current: 1.5A
DC supply current: 0.2mA
Operating temperature: -40...150°C
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
Output current: 1.5A
DC supply current: 0.2mA
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50825AB |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Mounting: THT
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Mounting: THT
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50825AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Mounting: SMD
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Mounting: SMD
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDD6637 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2304 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.81 EUR |
| 40+ | 2.14 EUR |
| 46+ | 1.89 EUR |
| 60+ | 1.43 EUR |
| 100+ | 1.27 EUR |
| NTLJS2103PTBG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC04ADR2G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 2µA
Number of inputs: 6
Case: SOIC14
Family: HC
Kind of integrated circuit: inverter
Number of channels: 6
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 2µA
Number of inputs: 6
Case: SOIC14
Family: HC
Kind of integrated circuit: inverter
Number of channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 2
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 3.87 EUR |
| SNUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP59301DS30R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP59301DS28R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.27 EUR |
| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33067PG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5924BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
auf Bestellung 2369 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 186+ | 0.46 EUR |
| 218+ | 0.39 EUR |
| 321+ | 0.26 EUR |
| 374+ | 0.23 EUR |
| 439+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| MMSZ5239BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5239BTR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR8100EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 2.5 EUR |
| 52+ | 1.65 EUR |
| 60+ | 1.43 EUR |
| FDMS3660S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2578 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.06 EUR |
| 40+ | 2.17 EUR |
| 46+ | 1.87 EUR |
| 100+ | 1.7 EUR |
| FDMS3664S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2937 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.7 EUR |
| 61+ | 1.42 EUR |
| 68+ | 1.26 EUR |
| 100+ | 1.07 EUR |
| FDMS86163P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Mounting: SMD
Power dissipation: 104W
Gate charge: 59nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 36mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Mounting: SMD
Power dissipation: 104W
Gate charge: 59nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 36mΩ
auf Bestellung 2471 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.99 EUR |
| 25+ | 3.45 EUR |
| 27+ | 3.18 EUR |
| 30+ | 2.86 EUR |
| 50+ | 2.64 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.34 EUR |
| FDMS8460 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.62 EUR |
| 40+ | 2.18 EUR |
| FDMS86252L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.83 EUR |
| 28+ | 3.06 EUR |
| 32+ | 2.69 EUR |
| 50+ | 2.01 EUR |
| 100+ | 1.78 EUR |
| 250+ | 1.67 EUR |
| FDMS8333L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 250A
Gate charge: 64nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 250A
Gate charge: 64nC
auf Bestellung 2982 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 90+ | 0.95 EUR |
| 100+ | 0.86 EUR |
| 112+ | 0.76 EUR |
| 500+ | 0.73 EUR |
| FDMS86520L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2927 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.86 EUR |
| 37+ | 2.34 EUR |
| 41+ | 2.09 EUR |
| 48+ | 1.78 EUR |
| 100+ | 1.63 EUR |
| FDMS86200 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS2572 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86300 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS5672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86104 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS5352 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86200DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7608S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86263P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS3604S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS1D2N03DSD |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH