| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NCP5106ADR2G | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
NCP5104DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Case: SO8 Mounting: SMD Kind of package: reel; tape Impulse rise time: 160ns Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Integrated circuit features: integrated bootstrap functionality Protection: undervoltage UVP Operating temperature: -40...125°C Output current: -500...250mA Pulse fall time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
NCP5109ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Case: SO8 Mounting: SMD Impulse rise time: 160ns Supply voltage: 10...20V DC Voltage class: 200V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Output current: -500...250mA Pulse fall time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
NCP5109BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Case: SO8 Mounting: SMD Impulse rise time: 160ns Supply voltage: 10...20V DC Voltage class: 200V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Output current: -500...250mA Pulse fall time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
FGHL40T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Power dissipation: 234W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Kind of package: tube Mounting: THT Gate charge: 118nC |
auf Bestellung 413 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| NVXK2VR40WDT2 | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A Electrical mounting: THT Topology: MOSFET three-phase bridge Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Kind of package: tube Gate-source voltage: -15...25V On-state resistance: 71mΩ Drain current: 31A Power dissipation: 102W Pulsed drain current: 170A Drain-source voltage: 1.2kV Case: APM32 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 5 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MC74HCT4851ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 11 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
MC74HCT4852ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74ACT02DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT Technology: TTL Case: SOIC14 Type of integrated circuit: digital Kind of gate: NOR Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Number of inputs: 2 Supply voltage: 4.5...5.5V DC Family: ACT Manufacturer series: ACT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BC848CLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SC59 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
DTC143ZET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...200 |
auf Bestellung 3580 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
DTA143ZET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 80...140 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| SZESDR0502BT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT416 Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVDAN222T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Type of diode: switching Semiconductor structure: common cathode; double Mounting: SMD Case: SOT416 Kind of package: reel; tape Application: automotive industry Load current: 0.1A Max. forward voltage: 1.2V Max. off-state voltage: 80V Features of semiconductor devices: small signal Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DAN222G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Type of diode: switching Semiconductor structure: common cathode; double Mounting: SMD Case: SOT416 Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 1.2V Max. off-state voltage: 80V Features of semiconductor devices: small signal Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DAP222G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Type of diode: switching Semiconductor structure: common anode; double Mounting: SMD Case: SOT416 Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 1.2V Max. off-state voltage: 80V Features of semiconductor devices: small signal Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
1N5400RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 200A Case: DO201AD |
auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| 1N5400G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO201AD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| 2SD1624T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 1.5W Collector current: 3A Collector-emitter voltage: 50V Current gain: 200...400 Frequency: 150MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| 2SD1624S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 1.5W Collector current: 3A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
NTS4173PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.8A Pulsed drain current: -5A Power dissipation: 0.29W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3061 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| BB-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Components: FT232BL; NCS36510 Connection: pin strips; Pmod socket x2; power supply; USB Type of development kit: evaluation |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC012N03 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
FDB035AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 124nC On-state resistance: 7.1mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 80A Power dissipation: 310W Case: D2PAK |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MC78LC33NTRG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 53mV Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
auf Bestellung 2906 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MC78LC50NTRG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Tolerance: ±2.5% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Kind of package: reel; tape Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Manufacturer series: MC78LC00 Output current: 0.1A Voltage drop: 38mV Input voltage: 6...12V Output voltage: 5V |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
NTHL040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
MC14015BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B Case: SOIC16 Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Technology: CMOS Operating temperature: -55...125°C Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Family: HEF4000B Kind of integrated circuit: 4bit; shift register |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FAN53601UC182X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN53611AUC18X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FGY40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 441W Case: TO247H03 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FGHL40T120RWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 174nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FGY140T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FGH4L40T120LQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| AFGHL40T120RWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 170nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSPM5131MUTBG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 16.5V; uDFN6; reel,tape Case: uDFN6 Mounting: SMD Type of diode: TVS Max. off-state voltage: 13.5V Breakdown voltage: 16.5V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
2N6284G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 160W Case: TO3 Mounting: THT Collector current: 20A Collector-emitter voltage: 100V Kind of package: in-tray Kind of transistor: Darlington Current gain: 100...18000 |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
2N6292G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Mounting: THT Polarisation: bipolar Case: TO220AB Type of transistor: NPN Kind of package: tube Collector current: 7A Power dissipation: 40W Collector-emitter voltage: 80V Frequency: 4MHz |
auf Bestellung 862 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
NDT2955 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223 Kind of package: reel; tape Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2.5A On-state resistance: 0.3Ω Power dissipation: 3W Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 3956 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
NTF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Kind of package: reel; tape Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2A On-state resistance: 0.185Ω Power dissipation: 2.3W Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 813 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
NVF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Gate-source voltage: ±20V Drain current: -2.6A Gate charge: 14.3nC On-state resistance: 154mΩ Power dissipation: 2.3W Case: SOT223 Kind of channel: enhancement Type of transistor: P-MOSFET |
auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MJD2955G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Kind of package: tube Case: DPAK Mounting: SMD Type of transistor: PNP Power dissipation: 20W Collector current: 10A Current gain: 20...100 Collector-emitter voltage: 60V Frequency: 2MHz Polarisation: bipolar |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MJE2955TG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB Kind of package: tube Case: TO220AB Mounting: THT Type of transistor: PNP Power dissipation: 125W Collector current: 10A Current gain: 20...100 Collector-emitter voltage: 60V Frequency: 2MHz Polarisation: bipolar |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| SVD2955T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Pulsed drain current: -18A Drain current: -12A Gate charge: 15nC On-state resistance: 0.18Ω Power dissipation: 55W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MJD2955T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Kind of package: reel; tape Case: DPAK Mounting: SMD Type of transistor: PNP Power dissipation: 20W Collector current: 10A Current gain: 20...100 Collector-emitter voltage: 60V Frequency: 2MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MJF2955G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP Kind of package: tube Case: TO220FP Mounting: THT Type of transistor: PNP Power dissipation: 30W Collector current: 10A Current gain: 20...100 Collector-emitter voltage: 90V Frequency: 2MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
  |
BAS16TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 0.5A Case: SOT416 Max. forward voltage: 1.25V Power dissipation: 0.36W Leakage current: 50µA Reverse recovery time: 6ns Capacitance: 2pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVBAS16TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SC75 Max. forward voltage: 1V Application: automotive industry Reverse recovery time: 6ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV8535MN500R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 0.5A Number of channels: 1 Output voltage: 5V Application: automotive industry Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV8535MN330R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 0.5A Number of channels: 1 Output voltage: 3.3V Application: automotive industry Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MM74HCT14M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 10µA Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Kind of package: tube Kind of gate: NOT Technology: CMOS |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
MC74HCT14ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Delay time: 32ns Kind of package: tube Kind of gate: NOT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
MM74HCT14MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Delay time: 13ns Kind of package: reel; tape Kind of gate: NOT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
MC74HCT14ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Delay time: 32ns Kind of package: reel; tape Kind of gate: NOT Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
MC74HCT14ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Delay time: 32ns Kind of package: reel; tape Kind of gate: NOT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
MM74HCT14MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Delay time: 13ns Kind of package: reel; tape Kind of gate: NOT Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC33164D-5R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Case: SOIC8 Active logical level: low Mounting: SMD Kind of RESET output: open drain Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 1...10V Threshold on-voltage: 5V Kind of integrated circuit: power on reset monitor (PoR); voltage detector |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC33164D-3R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Case: SOIC8 Active logical level: low Mounting: SMD Kind of RESET output: open drain Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 1...10V Threshold on-voltage: 3V Kind of integrated circuit: power on reset monitor (PoR); voltage detector |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC33164DM-3R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Case: TSSOP8 Active logical level: low Mounting: SMD Kind of RESET output: open drain Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 1...10V Threshold on-voltage: 3V Kind of integrated circuit: power on reset monitor (PoR); voltage detector |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCP5106ADR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP5104DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Impulse rise time: 160ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Protection: undervoltage UVP
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Impulse rise time: 160ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Protection: undervoltage UVP
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP5109ADR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP5109BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGHL40T120SWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Power dissipation: 234W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 118nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Power dissipation: 234W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 118nC
auf Bestellung 413 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.38 EUR |
| 19+ | 3.96 EUR |
| NVXK2VR40WDT2 |
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A
Electrical mounting: THT
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Kind of package: tube
Gate-source voltage: -15...25V
On-state resistance: 71mΩ
Drain current: 31A
Power dissipation: 102W
Pulsed drain current: 170A
Drain-source voltage: 1.2kV
Case: APM32
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A
Electrical mounting: THT
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Kind of package: tube
Gate-source voltage: -15...25V
On-state resistance: 71mΩ
Drain current: 31A
Power dissipation: 102W
Pulsed drain current: 170A
Drain-source voltage: 1.2kV
Case: APM32
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| M74HCT4852ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT4851ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT4852ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT02DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Technology: TTL
Case: SOIC14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Family: ACT
Manufacturer series: ACT
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Technology: TTL
Case: SOIC14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Family: ACT
Manufacturer series: ACT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC848CLT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC143ZET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
auf Bestellung 3580 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 685+ | 0.1 EUR |
| 985+ | 0.073 EUR |
| 1153+ | 0.062 EUR |
| 1598+ | 0.045 EUR |
| 1819+ | 0.039 EUR |
| 3000+ | 0.031 EUR |
| DTA143ZET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
auf Bestellung 2910 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 685+ | 0.1 EUR |
| 1087+ | 0.066 EUR |
| 1467+ | 0.049 EUR |
| 1662+ | 0.043 EUR |
| SZESDR0502BT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDAN222T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DAN222G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DAP222G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5400RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 455+ | 0.16 EUR |
| 472+ | 0.15 EUR |
| 1N5400G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO201AD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1624T-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.5W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.5W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1624S-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.5W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.5W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTS4173PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3061 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 391+ | 0.18 EUR |
| 459+ | 0.16 EUR |
| 506+ | 0.14 EUR |
| 562+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| 1000+ | 0.096 EUR |
| 3000+ | 0.084 EUR |
| BB-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Connection: pin strips; Pmod socket x2; power supply; USB
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Connection: pin strips; Pmod socket x2; power supply; USB
Type of development kit: evaluation
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC012N03 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB035AN06A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.56 EUR |
| 16+ | 4.69 EUR |
| MC78LC33NTRG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| MC78LC50NTRG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Tolerance: ±2.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Output current: 0.1A
Voltage drop: 38mV
Input voltage: 6...12V
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Tolerance: ±2.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Output current: 0.1A
Voltage drop: 38mV
Input voltage: 6...12V
Output voltage: 5V
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 348+ | 0.21 EUR |
| 397+ | 0.18 EUR |
| 477+ | 0.15 EUR |
| 596+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| NTHL040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14015BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Operating temperature: -55...125°C
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Operating temperature: -55...125°C
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN53601UC182X |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN53611AUC18X |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY40T120SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGHL40T120RWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY140T120SWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH4L40T120LQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGHL40T120RWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSPM5131MUTBG |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 13.5V
Breakdown voltage: 16.5V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 13.5V
Breakdown voltage: 16.5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6284G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Collector current: 20A
Collector-emitter voltage: 100V
Kind of package: in-tray
Kind of transistor: Darlington
Current gain: 100...18000
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Collector current: 20A
Collector-emitter voltage: 100V
Kind of package: in-tray
Kind of transistor: Darlington
Current gain: 100...18000
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.93 EUR |
| 16+ | 4.48 EUR |
| 2N6292G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Mounting: THT
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 7A
Power dissipation: 40W
Collector-emitter voltage: 80V
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Mounting: THT
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 7A
Power dissipation: 40W
Collector-emitter voltage: 80V
Frequency: 4MHz
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 1.57 EUR |
| 60+ | 1.19 EUR |
| 72+ | 1 EUR |
| 111+ | 0.65 EUR |
| 112+ | 0.64 EUR |
| NDT2955 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.5A
On-state resistance: 0.3Ω
Power dissipation: 3W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.5A
On-state resistance: 0.3Ω
Power dissipation: 3W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 3956 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 111+ | 0.65 EUR |
| 154+ | 0.47 EUR |
| 177+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| NTF2955T1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 813 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 51+ | 1.42 EUR |
| 65+ | 1.12 EUR |
| 74+ | 0.98 EUR |
| 87+ | 0.82 EUR |
| 100+ | 0.74 EUR |
| 200+ | 0.67 EUR |
| 500+ | 0.62 EUR |
| NVF2955T1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 68+ | 1.06 EUR |
| 82+ | 0.87 EUR |
| MJD2955G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 2.3 EUR |
| MJE2955TG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 125W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 125W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 92+ | 0.79 EUR |
| 110+ | 0.65 EUR |
| 113+ | 0.63 EUR |
| SVD2955T4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD2955T4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJF2955G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16TT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Leakage current: 50µA
Reverse recovery time: 6ns
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Leakage current: 50µA
Reverse recovery time: 6ns
Capacitance: 2pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBAS16TT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8535MN500R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Case: DFN10
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Case: DFN10
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8535MN330R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Case: DFN10
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Case: DFN10
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT14M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 156+ | 0.46 EUR |
| MC74HCT14ADG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT14MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT14ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT14ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT14MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33164D-5R2G |
|
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33164D-3R2G |
|
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33164DM-3R2G |
|
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: TSSOP8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: TSSOP8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH