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| NVMFWS016N06CT1G | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 226A Power dissipation: 18W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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1N5401RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27 Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5401G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
auf Bestellung 454 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVTH245MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Technology: BiCMOS Kind of package: tube Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
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BC847BM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.26W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCB070N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Power dissipation: 312W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 639 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBL070N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Pulsed drain current: 110A Power dissipation: 312W Case: H-PSOF8L Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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1N5363BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
auf Bestellung 929 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5363BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
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LM833DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 5...18V DC; 10...36V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 7V/μs Input offset voltage: 0.3mV Kind of package: reel; tape Integrated circuit features: low noise |
auf Bestellung 2956 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14584BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Case: SO14 Family: HEF4000B Number of channels: hex; 6 Kind of gate: NOT Kind of package: tube Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 1 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14584BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Case: TSSOP14 Family: HEF4000B Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 1 |
auf Bestellung 2073 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMQ8205 | ONSEMI |
Category: Integrated circuits - others Description: IC: driver; single phase transistor bridge; ideal diode bridge Mounting: SMD Case: WDFN12 Kind of package: reel; tape Type of integrated circuit: driver Technology: GreenBridge™ 2 Kind of integrated circuit: ideal diode bridge Topology: single phase transistor bridge Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| SURA8205T3G-VF01 | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 30ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.94V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| MMBTA42 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.24W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
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| ESD5B5.0ST5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Version: ESD Peak pulse power dissipation: 50W |
Produkt ist nicht verfügbar |
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| ESD5B5.0ST5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.8V Semiconductor structure: bidirectional Case: SOD523F Mounting: SMD Leakage current: 1µA Peak pulse power dissipation: 50W |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC856BLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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MMSZ15T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
auf Bestellung 6160 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5245BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z15VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX79C15 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 50nA |
auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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| MURF1620CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns Mounting: THT Reverse recovery time: 25ns Load current: 16A Max. off-state voltage: 200V Max. forward impulse current: 100A Semiconductor structure: common cathode; double Case: TO220FP Type of diode: rectifying Kind of package: tube |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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| N24RF16DTPT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C,RF; 2kx8bit/512x32bit; 1MHz Mounting: SMD Operating temperature: -40...105°C Access time: 400ns Operating voltage: 1.8...5.5V Memory: 16kb EEPROM Clock frequency: 1MHz Memory organisation: 2kx8bit/512x32bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: I2C; RF Case: TSSOP8 Kind of package: reel; tape Kind of interface: serial |
Produkt ist nicht verfügbar |
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LM339N | ONSEMI |
Category: THT comparators Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 2...36V Mounting: THT Case: DIP14 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: tube Kind of output: open collector Input offset current: 150nA |
Produkt ist nicht verfügbar |
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| CAT25640YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| CAT25640VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NC7SB3157P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SC70-6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA Kind of output: SPDT |
auf Bestellung 1965 Stücke: Lieferzeit 14-21 Tag (e) |
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NLVASB3157DFT2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: SC88A Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -55...125°C Kind of output: SPDT Number of channels: 1 Application: automotive industry |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM317D2TR4G | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
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LM317MBDTG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.2...40V Tolerance: ±4% |
Produkt ist nicht verfügbar |
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| NVMYS005N10MCLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 736A; 65W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 108A Pulsed drain current: 736A Power dissipation: 65W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FQP4N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQB4N80TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FQI4N80TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MMBFJ175LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Polarisation: unipolar Drain current: 7mA Gate current: 50mA Power dissipation: 0.225W Gate-source voltage: 30V On-state resistance: 125Ω Kind of package: reel; tape Type of transistor: P-JFET Mounting: SMD Case: SOT23 |
auf Bestellung 1026 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMMBFJ175LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23 Polarisation: unipolar Drain-source voltage: -25V Drain current: -60mA Power dissipation: 0.225W Kind of channel: enhancement On-state resistance: 125Ω Kind of package: reel; tape Type of transistor: P-JFET Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |
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FQD12N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 55W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 21nC On-state resistance: 0.32Ω Kind of channel: enhancement Drain current: 5.7A Gate-source voltage: ±20V Drain-source voltage: 200V Technology: QFET® |
auf Bestellung 1382 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD12N20LTM-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 55W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 21nC On-state resistance: 0.28Ω Kind of channel: enhancement Drain current: 5.7A Application: automotive industry Gate-source voltage: ±20V Pulsed drain current: 36A Drain-source voltage: 200V Technology: QFET® |
Produkt ist nicht verfügbar |
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FQD12N20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 55W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 23nC On-state resistance: 0.28Ω Kind of channel: enhancement Drain current: 5.7A Gate-source voltage: ±30V Pulsed drain current: 36A Drain-source voltage: 200V Technology: QFET® |
Produkt ist nicht verfügbar |
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| FQU12N20TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 55W Case: IPAK Mounting: THT Kind of package: tube Gate charge: 23nC On-state resistance: 0.28Ω Kind of channel: enhancement Drain current: 5.7A Gate-source voltage: ±30V Pulsed drain current: 36A Drain-source voltage: 200V |
Produkt ist nicht verfügbar |
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| FDMS004N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Pulsed drain current: 637A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
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| NTMFSC004N08MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 136A Pulsed drain current: 487A Power dissipation: 127W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 43.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMC007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 330A Power dissipation: 57W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMC007N08LCDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 41A Pulsed drain current: 339A Power dissipation: 57W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS007N08HLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 71A Pulsed drain current: 347A Power dissipation: 40W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 32.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFWS007N08HLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 71A Pulsed drain current: 347A Power dissipation: 40W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 32.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDN327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 2305 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3 Type of transistor: IGBT Power dissipation: 267W Case: TO247-3 Mounting: THT Gate charge: 313nC Kind of package: tube Collector current: 40A Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 200A |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N120FL3WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Type of transistor: IGBT Power dissipation: 227W Case: TO247-3 Mounting: THT Gate charge: 212nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 160A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVBG040N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBG040N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTHL040N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38A Pulsed drain current: 134A Power dissipation: 115W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVHL040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 +1 |
ESD8008MUTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD Kind of package: reel; tape Version: ESD Mounting: SMD Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5.5...8.5V Number of channels: 8 Case: uDFN14 |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJF18008G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP Polarisation: bipolar Kind of package: tube Type of transistor: NPN Mounting: THT Collector current: 8A Current gain: 14...34 Power dissipation: 45W Collector-emitter voltage: 450V Frequency: 13MHz Case: TO220FP |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14043BDR2G | ONSEMI |
Category: Latches Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16 Mounting: SMD Operating temperature: -55...125°C Family: HEF4000B Type of integrated circuit: digital Case: SOIC16 Kind of package: reel; tape Kind of integrated circuit: RS latch Number of inputs: 2 Number of channels: 4 Supply voltage: 3...18V DC Technology: CMOS |
Produkt ist nicht verfügbar |
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MC14044BDR2G | ONSEMI |
Category: Latches Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16 Mounting: SMD Operating temperature: -55...125°C Family: HEF4000B Type of integrated circuit: digital Case: SOIC16 Kind of package: reel; tape Kind of integrated circuit: RS latch Number of inputs: 2 Number of channels: 4 Supply voltage: 3...18V DC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFWS016N06CT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 226A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 226A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5401RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 251+ | 0.29 EUR |
| 1N5401G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 261+ | 0.27 EUR |
| 374+ | 0.19 EUR |
| 74LVTH245MTC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: BiCMOS
Kind of package: tube
Supply voltage: 2.7...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: BiCMOS
Kind of package: tube
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847BM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 348+ | 0.21 EUR |
| 524+ | 0.14 EUR |
| 631+ | 0.11 EUR |
| 797+ | 0.09 EUR |
| 935+ | 0.077 EUR |
| 1080+ | 0.066 EUR |
| 5000+ | 0.054 EUR |
| FCB070N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.84 EUR |
| 14+ | 5.31 EUR |
| 25+ | 5.19 EUR |
| NTBL070N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5363BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 929 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 174+ | 0.41 EUR |
| 192+ | 0.37 EUR |
| 277+ | 0.26 EUR |
| 327+ | 0.22 EUR |
| 500+ | 0.21 EUR |
| 1N5363BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM833DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 2956 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 266+ | 0.27 EUR |
| 300+ | 0.24 EUR |
| 348+ | 0.21 EUR |
| 421+ | 0.17 EUR |
| 455+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| MC14584BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| MC14584BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
auf Bestellung 2073 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 173+ | 0.41 EUR |
| 194+ | 0.37 EUR |
| 217+ | 0.33 EUR |
| FDMQ8205 |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Case: WDFN12
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Operating temperature: -40...85°C
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Case: WDFN12
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SURA8205T3G-VF01 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA42 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD5B5.0ST5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD5B5.0ST5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 50W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 50W
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.05 EUR |
| SBC856BLT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ15T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
auf Bestellung 6160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 569+ | 0.13 EUR |
| 650+ | 0.11 EUR |
| 966+ | 0.074 EUR |
| 1171+ | 0.061 EUR |
| 1825+ | 0.039 EUR |
| 2184+ | 0.033 EUR |
| 3000+ | 0.027 EUR |
| MMSZ5245BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 254+ | 0.29 EUR |
| MM3Z15VST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 493 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 493+ | 0.14 EUR |
| BZX79C15 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 50nA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 50nA
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 807+ | 0.089 EUR |
| 840+ | 0.086 EUR |
| MURF1620CTG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: rectifying
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: rectifying
Kind of package: tube
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.14 EUR |
| 41+ | 1.74 EUR |
| 47+ | 1.54 EUR |
| 61+ | 1.19 EUR |
| N24RF16DTPT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C,RF; 2kx8bit/512x32bit; 1MHz
Mounting: SMD
Operating temperature: -40...105°C
Access time: 400ns
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Clock frequency: 1MHz
Memory organisation: 2kx8bit/512x32bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Case: TSSOP8
Kind of package: reel; tape
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C,RF; 2kx8bit/512x32bit; 1MHz
Mounting: SMD
Operating temperature: -40...105°C
Access time: 400ns
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Clock frequency: 1MHz
Memory organisation: 2kx8bit/512x32bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Case: TSSOP8
Kind of package: reel; tape
Kind of interface: serial
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM339N |
|
Hersteller: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Kind of output: open collector
Input offset current: 150nA
Category: THT comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Kind of output: open collector
Input offset current: 150nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25640YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25640VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SB3157P6X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of output: SPDT
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 463+ | 0.15 EUR |
| 511+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| 770+ | 0.093 EUR |
| 1000+ | 0.089 EUR |
| NLVASB3157DFT2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Number of channels: 1
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Number of channels: 1
Application: automotive industry
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 169+ | 0.42 EUR |
| 191+ | 0.37 EUR |
| 219+ | 0.33 EUR |
| 500+ | 0.29 EUR |
| LM317D2TR4G | |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM317MBDTG |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±4%
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±4%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS005N10MCLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 736A; 65W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 736A
Power dissipation: 65W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 736A; 65W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 736A
Power dissipation: 65W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP4N80 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| FQB4N80TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQI4N80TU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBFJ175LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 210+ | 0.34 EUR |
| 277+ | 0.26 EUR |
| 345+ | 0.21 EUR |
| 424+ | 0.17 EUR |
| 603+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| SMMBFJ175LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -60mA
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -60mA
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD12N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.32Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.32Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Technology: QFET®
auf Bestellung 1382 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 71+ | 1.02 EUR |
| 81+ | 0.89 EUR |
| 98+ | 0.74 EUR |
| 113+ | 0.64 EUR |
| 129+ | 0.56 EUR |
| 500+ | 0.48 EUR |
| FQD12N20LTM-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD12N20TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
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| FQU12N20TU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: IPAK
Mounting: THT
Kind of package: tube
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: IPAK
Mounting: THT
Kind of package: tube
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
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| FDMS004N08C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| NTMFSC004N08MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 136A
Pulsed drain current: 487A
Power dissipation: 127W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 136A
Pulsed drain current: 487A
Power dissipation: 127W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC007N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS007N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC007N08LCDC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS007N08HLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| NVTFWS007N08HLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDN327N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2305 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 193+ | 0.37 EUR |
| 227+ | 0.32 EUR |
| 329+ | 0.22 EUR |
| 376+ | 0.19 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| NGTB40N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| NGTB40N120FL3WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Power dissipation: 227W
Case: TO247-3
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Power dissipation: 227W
Case: TO247-3
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.47 EUR |
| 8+ | 9.41 EUR |
| 10+ | 8.31 EUR |
| NTHL040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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Im Einkaufswagen
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| NVBG040N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NTBG040N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NTHL040N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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| NVHL040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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| ESD8008MUTAG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Number of channels: 8
Case: uDFN14
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Number of channels: 8
Case: uDFN14
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 104+ | 0.69 EUR |
| 123+ | 0.58 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.46 EUR |
| MJF18008G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Current gain: 14...34
Power dissipation: 45W
Collector-emitter voltage: 450V
Frequency: 13MHz
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Current gain: 14...34
Power dissipation: 45W
Collector-emitter voltage: 450V
Frequency: 13MHz
Case: TO220FP
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.79 EUR |
| 29+ | 2.52 EUR |
| 50+ | 2.2 EUR |
| MC14043BDR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: RS latch
Number of inputs: 2
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: RS latch
Number of inputs: 2
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
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| MC14044BDR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: RS latch
Number of inputs: 2
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: RS latch
Number of inputs: 2
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
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