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MC14018BDR2G MC14018BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
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MC14011UBDG MC14011UBDG ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
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167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 167
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MC14011BDR2G MC14011BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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MC14011UBDR2G MC14011UBDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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FQB33N10LTM FQB33N10LTM ONSEMI fqb33n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
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FQB33N10TM FQB33N10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
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FOD3150 FOD3150 ONSEMI FOD3150.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
auf Bestellung 383 Stücke:
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51+1.42 EUR
57+1.26 EUR
60+1.2 EUR
100+1.06 EUR
Mindestbestellmenge: 51
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NSR20F30NXT5G
+1
 		NSR20F30NXT5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
auf Bestellung 966 Stücke:
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107+0.67 EUR
155+0.46 EUR
204+0.35 EUR
230+0.31 EUR
Mindestbestellmenge: 107
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LM285D-2.5R2G LM285D-2.5R2G ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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KSD1408YTU KSD1408YTU ONSEMI ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
Produkt ist nicht verfügbar
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SZ1SMB5931BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NCP3420DR2G NCP3420DR2G ONSEMI ncp3420-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Produkt ist nicht verfügbar
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1N4148WS 1N4148WS ONSEMI 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 6205 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
1386+0.052 EUR
1825+0.039 EUR
2058+0.035 EUR
3000+0.034 EUR
Mindestbestellmenge: 715
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FDS4480 FDS4480 ONSEMI fds4480-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
auf Bestellung 2318 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
72+1.01 EUR
81+0.89 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 63
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MMBT589LT1G MMBT589LT1G ONSEMI mmbt589lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
192+0.37 EUR
280+0.26 EUR
332+0.22 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139
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1N5339BRLG 1N5339BRLG ONSEMI 1n5333b-d.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
300+0.24 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 148
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTF3055L108T1G NTF3055L108T1G ONSEMI NTF3055L108.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
auf Bestellung 1246 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
133+0.54 EUR
147+0.49 EUR
200+0.45 EUR
Mindestbestellmenge: 109
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LM393N LM393N ONSEMI LM393N-fai.pdf Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Produkt ist nicht verfügbar
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NSR10F40NXT5G NSR10F40NXT5G ONSEMI nsr10f40-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
230+0.31 EUR
265+0.27 EUR
327+0.22 EUR
376+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 167
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NSR10F20NXT5G ONSEMI nsr10f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
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NSR1030QMUTWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
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NSR10F30NXT5G ONSEMI nsr10f30-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC79M15CDTRKG MC79M15CDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
192+0.37 EUR
211+0.34 EUR
243+0.29 EUR
Mindestbestellmenge: 132
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MC79M15CTG MC79M15CTG ONSEMI MC79M00-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
119+0.6 EUR
Mindestbestellmenge: 119
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MC79M15BDTRKG MC79M15BDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
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MC79M15BTG ONSEMI mc79m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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FCP16N60 FCP16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
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FCPF16N60 FCPF16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
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NCP1246ALD065R2G ONSEMI ncp1246-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
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NTR4501NT1G NTR4501NT1G ONSEMI NxR4501N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6921 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
447+0.16 EUR
599+0.12 EUR
677+0.11 EUR
889+0.081 EUR
1000+0.073 EUR
1500+0.068 EUR
3000+0.067 EUR
Mindestbestellmenge: 313
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NTR4503NT1G NTR4503NT1G ONSEMI ntr4503n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2846 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
451+0.16 EUR
544+0.13 EUR
596+0.12 EUR
658+0.11 EUR
715+0.1 EUR
1000+0.094 EUR
1500+0.092 EUR
Mindestbestellmenge: 385
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FDC3601N FDC3601N ONSEMI fdc3601n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
118+0.61 EUR
177+0.4 EUR
250+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 88
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NCP115ASN180T1G NCP115ASN180T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
138+0.51 EUR
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NCP115AMX330TBG NCP115AMX330TBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
329+0.22 EUR
379+0.19 EUR
443+0.16 EUR
505+0.14 EUR
Mindestbestellmenge: 278
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NCP115ASN180T2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
Produkt ist nicht verfügbar
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NRVB1045MFST1G ONSEMI mbr1045mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
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NRVB1045MFST3G ONSEMI MBR1045MFS-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
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GRUMMBT3904LT1G ONSEMI Category: Unclassified
Description: GRUMMBT3904LT1G
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.018 EUR
Mindestbestellmenge: 6000
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BD439G BD439G ONSEMI bd437-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Produkt ist nicht verfügbar
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SZNUP2105LT1G SZNUP2105LT1G ONSEMI NUP2105L.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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RS1G RS1G ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
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RS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVHPRS1GFA NRVHPRS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NTLUS030N03CTAG ONSEMI ntlus030n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR0540 ONSEMI MBR0540.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FGH50T65UPD ONSEMI fgh50t65upd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
Produkt ist nicht verfügbar
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FGHL50T65MQD ONSEMI FGHL50T65MQD-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Produkt ist nicht verfügbar
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FGHL50T65LQDT ONSEMI fghl50t65lqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
Produkt ist nicht verfügbar
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FGHL50T65MQDT ONSEMI fghl50t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Produkt ist nicht verfügbar
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FGHL50T65SQDT ONSEMI fghl50t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
Produkt ist nicht verfügbar
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AFGHL50T65RQDN ONSEMI afghl50t65rqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
Produkt ist nicht verfügbar
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AFGHL50T65SQ ONSEMI afghl50t65sq-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Produkt ist nicht verfügbar
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AFGHL50T65SQD ONSEMI afghl50t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
Produkt ist nicht verfügbar
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AFGHL50T65SQDC ONSEMI afghl50t65sqdc-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Produkt ist nicht verfügbar
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MC14050BDR2G MC14050BDR2G ONSEMI mc14049b-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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MC14050BDTR2G ONSEMI MC14049B-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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1N5355BRLG 1N5355BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NVH4L030N120M3S ONSEMI nvh4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NTH4L030N120M3S ONSEMI nth4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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MC14018BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6
MC14018BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
Produkt ist nicht verfügbar
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MC14011UBDG MC14001B-D.pdf
MC14011UBDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 167
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MC14011BDR2G MC14001B-D.pdf
MC14011BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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MC14011UBDR2G MC14001B-D.pdf
MC14011UBDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
Produkt ist nicht verfügbar
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FQB33N10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec
FQB33N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
Produkt ist nicht verfügbar
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FOD3150 FOD3150.pdf
FOD3150
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
60+1.2 EUR
100+1.06 EUR
Mindestbestellmenge: 51
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NSR20F30NXT5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0
NSR20F30NXT5G
+1
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
155+0.46 EUR
204+0.35 EUR
230+0.31 EUR
Mindestbestellmenge: 107
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LM285D-2.5R2G LM285_LM385B.PDF
LM285D-2.5R2G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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KSD1408YTU ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw
KSD1408YTU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
Produkt ist nicht verfügbar
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SZ1SMB5931BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NCP3420DR2G ncp3420-d.pdf
NCP3420DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Produkt ist nicht verfügbar
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1N4148WS 1N4148WS.pdf
1N4148WS
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 6205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
1386+0.052 EUR
1825+0.039 EUR
2058+0.035 EUR
3000+0.034 EUR
Mindestbestellmenge: 715
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FDS4480 fds4480-d.pdf
FDS4480
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
auf Bestellung 2318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
72+1.01 EUR
81+0.89 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 63
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MMBT589LT1G mmbt589lt1-d.pdf
MMBT589LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
192+0.37 EUR
280+0.26 EUR
332+0.22 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139
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1N5339BRLG 1n5333b-d.pdf
1N5339BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
300+0.24 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 148
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FDB0170N607L fdb0170n607l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTF3055L108T1G NTF3055L108.PDF
NTF3055L108T1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
auf Bestellung 1246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
133+0.54 EUR
147+0.49 EUR
200+0.45 EUR
Mindestbestellmenge: 109
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LM393N LM393N-fai.pdf
LM393N
Hersteller: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Produkt ist nicht verfügbar
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NSR10F40NXT5G nsr10f40-d.pdf
NSR10F40NXT5G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
265+0.27 EUR
327+0.22 EUR
376+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 167
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NSR10F20NXT5G nsr10f20-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSR1030QMUTWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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NSR10F30NXT5G nsr10f30-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC79M15CDTRKG MC79M00-D.PDF
MC79M15CDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
192+0.37 EUR
211+0.34 EUR
243+0.29 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
MC79M15CTG MC79M00-D.PDF
MC79M15CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
119+0.6 EUR
Mindestbestellmenge: 119
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MC79M15BDTRKG MC79M00-D.PDF
MC79M15BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
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MC79M15BTG mc79m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
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NCP1246ALD065R2G ncp1246-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
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NTR4501NT1G NxR4501N.PDF
NTR4501NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6921 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
447+0.16 EUR
599+0.12 EUR
677+0.11 EUR
889+0.081 EUR
1000+0.073 EUR
1500+0.068 EUR
3000+0.067 EUR
Mindestbestellmenge: 313
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NTR4503NT1G ntr4503n-d.pdf
NTR4503NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2846 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
451+0.16 EUR
544+0.13 EUR
596+0.12 EUR
658+0.11 EUR
715+0.1 EUR
1000+0.094 EUR
1500+0.092 EUR
Mindestbestellmenge: 385
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FDC3601N fdc3601n-d.pdf
FDC3601N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
118+0.61 EUR
177+0.4 EUR
250+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 88
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NCP115ASN180T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
NCP115ASN180T1G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
138+0.51 EUR
Mindestbestellmenge: 138
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NCP115AMX330TBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
NCP115AMX330TBG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
329+0.22 EUR
379+0.19 EUR
443+0.16 EUR
505+0.14 EUR
Mindestbestellmenge: 278
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NCP115ASN180T2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
Produkt ist nicht verfügbar
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NRVB1045MFST1G mbr1045mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
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NRVB1045MFST3G MBR1045MFS-D.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
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GRUMMBT3904LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUMMBT3904LT1G
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.018 EUR
Mindestbestellmenge: 6000
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BD439G bd437-d.pdf
BD439G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Produkt ist nicht verfügbar
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SZNUP2105LT1G NUP2105L.PDF
SZNUP2105LT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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RS1G RS1x.pdf
RS1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
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RS1GFA rs1afa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVHPRS1GFA rs1afa-d.pdf
NRVHPRS1GFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NTLUS030N03CTAG ntlus030n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBR0540 MBR0540.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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FGH50T65UPD fgh50t65upd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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FGHL50T65MQD FGHL50T65MQD-D.PDF
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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FGHL50T65LQDT fghl50t65lqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
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FGHL50T65MQDT fghl50t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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FGHL50T65SQDT fghl50t65sqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
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AFGHL50T65RQDN afghl50t65rqdn-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
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AFGHL50T65SQ afghl50t65sq-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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AFGHL50T65SQD afghl50t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
Produkt ist nicht verfügbar
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AFGHL50T65SQDC afghl50t65sqdc-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Produkt ist nicht verfügbar
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MC14050BDR2G mc14049b-d.pdf
MC14050BDR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
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MC14050BDTR2G MC14049B-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
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1N5355BRLG description 1N53xx.PDF
1N5355BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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NVH4L030N120M3S nvh4l030n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
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NTH4L030N120M3S nth4l030n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
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