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FQD8P10TM FQD8P10TM ONSEMI FQD8P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1533 Stücke:
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55+1.57 EUR
72+1.19 EUR
82+1.05 EUR
111+0.76 EUR
126+0.68 EUR
500+0.54 EUR
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FQD7P20TM FQD7P20TM ONSEMI FQD7P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1297 Stücke:
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66+1.3 EUR
85+1 EUR
100+0.95 EUR
500+0.9 EUR
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FQB22P10TM FQB22P10TM ONSEMI FQB22P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3381 Stücke:
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24+3.56 EUR
31+2.81 EUR
35+2.46 EUR
41+2.07 EUR
50+1.82 EUR
100+1.62 EUR
500+1.58 EUR
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FQP17P06 FQP17P06 ONSEMI FQP17P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
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36+2.4 EUR
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FQT7N10LTF FQT7N10LTF ONSEMI FQT7N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2492 Stücke:
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88+0.98 EUR
500+0.5 EUR
1000+0.49 EUR
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FQD3P50TM FQD3P50TM ONSEMI FQD3P50.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 28 Stücke:
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28+3.05 EUR
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FQB34P10TM FQB34P10TM ONSEMI FQB34P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 312 Stücke:
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17+5.11 EUR
21+4.12 EUR
24+3.63 EUR
29+3.03 EUR
100+2.65 EUR
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FQD12N20LTM FQD12N20LTM ONSEMI FQD12N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1184 Stücke:
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50+1.74 EUR
63+1.37 EUR
72+1.2 EUR
99+0.87 EUR
113+0.76 EUR
500+0.57 EUR
1000+0.56 EUR
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FDMC2523PFDMC2523P
FDMC2523PFDMC2523P
 FDMC2523P ONSEMI FDMC2523P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
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32+2.69 EUR
44+1.95 EUR
48+1.81 EUR
59+1.46 EUR
100+1.33 EUR
250+1.19 EUR
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FQB12P20TM FQB12P20TM ONSEMI FQB12P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 286 Stücke:
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24+3.59 EUR
30+2.88 EUR
34+2.53 EUR
50+1.86 EUR
100+1.69 EUR
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FQPF47P06 FQPF47P06 ONSEMI FQPF47P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 17 Stücke:
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17+5 EUR
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FQB47P06TM-AM002 FQB47P06TM-AM002 ONSEMI FQB47P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 627 Stücke:
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15+6.02 EUR
21+4.07 EUR
25+3.65 EUR
50+3.33 EUR
100+3.24 EUR
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FQA70N10 FQA70N10 ONSEMI FQA70N10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
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18+4.74 EUR
30+2.88 EUR
31+2.77 EUR
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FQD13N10LTM FQD13N10LTM ONSEMI FQD13N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 899 Stücke:
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57+1.5 EUR
79+1.08 EUR
90+0.95 EUR
118+0.73 EUR
132+0.64 EUR
500+0.51 EUR
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FQD19N10LTM FQD19N10LTM ONSEMI FQD19N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1467 Stücke:
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42+2.06 EUR
55+1.55 EUR
63+1.37 EUR
83+1.02 EUR
100+0.9 EUR
500+0.75 EUR
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FQT4N20LTF FQT4N20LTF ONSEMI FQT4N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3128 Stücke:
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80+1.07 EUR
106+0.81 EUR
147+0.58 EUR
250+0.52 EUR
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FQPF19N20C FQPF19N20C ONSEMI fqpf19n20c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 990 Stücke:
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30+2.88 EUR
42+2.06 EUR
56+1.54 EUR
65+1.31 EUR
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FQD13N06LTM FQD13N06LTM ONSEMI FQD13N06L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2023 Stücke:
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66+1.3 EUR
102+0.83 EUR
121+0.7 EUR
154+0.55 EUR
250+0.48 EUR
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FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 139 Stücke:
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23+3.81 EUR
29+2.98 EUR
33+2.61 EUR
50+1.94 EUR
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FQB5N90TM FQB5N90TM ONSEMI FQB5N90.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 158W
Gate charge: 40nC
Technology: QFET®
auf Bestellung 683 Stücke:
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23+3.84 EUR
25+3.47 EUR
27+3.24 EUR
30+2.89 EUR
50+2.62 EUR
100+2.55 EUR
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FQP45N15V2 FQP45N15V2 ONSEMI FQP45N15V2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 220W
Gate charge: 94nC
Polarisation: unipolar
Technology: QFET®
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 40mΩ
auf Bestellung 56 Stücke:
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22+3.95 EUR
36+2.4 EUR
50+2.11 EUR
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FQB55N10TM FQB55N10TM ONSEMI FQB55N10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 235 Stücke:
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21+4.08 EUR
27+3.2 EUR
31+2.81 EUR
36+2.37 EUR
50+2.07 EUR
100+2.01 EUR
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FQB19N20LTM FQB19N20LTM ONSEMI FQB19N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 620 Stücke:
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27+3.25 EUR
40+2.13 EUR
46+1.87 EUR
50+1.7 EUR
100+1.54 EUR
500+1.45 EUR
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FQD6N40CTM FQD6N40CTM ONSEMI FQD6N40C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
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36+2.38 EUR
57+1.5 EUR
66+1.31 EUR
100+1.08 EUR
250+0.96 EUR
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FQP11N40C FQP11N40C ONSEMI FQP11N40C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
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32+2.7 EUR
35+2.46 EUR
40+2.13 EUR
50+1.83 EUR
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FQD9N25TM-F080 FQD9N25TM-F080 ONSEMI ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Produkt ist nicht verfügbar
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MC7905CTG MC7905CTG ONSEMI MC7900-D.PDF description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Tolerance: ±4%
Mounting: THT
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: 0...125°C
Heatsink thickness: 0.508...0.61mm
Output voltage: -5V
Kind of package: tube
Case: TO220AB
Number of channels: 1
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.76 EUR
155+0.55 EUR
169+0.5 EUR
181+0.48 EUR
191+0.44 EUR
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NV24C512MUW3VTBG ONSEMI NV24C512MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C512YE-GT3 ONSEMI CAV24C512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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SA5534ADR2G ONSEMI ne5534-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 13V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 200nA
Case: SO8
Number of channels: single; 1
Bandwidth: 10MHz
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MJ802GMJ802G
MJ802GMJ802G
 MJ802G ONSEMI mj802-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
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9+10.2 EUR
11+8.34 EUR
12+7.45 EUR
50+7.24 EUR
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PIR-GEVB ONSEMI PIR-GEVB_Web.pdf Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Kit contents: prototype board
Components: NCS36000
Connection: Pmod connector
Interface: GPIO; I2C
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
Produkt ist nicht verfügbar
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GBPC2508 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBPC2508W ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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MC33274ADR2G MC33274ADR2G ONSEMI MC3327xA.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
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76+1.12 EUR
101+0.84 EUR
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MC33274ADTBR2G MC33274ADTBR2G ONSEMI mc33272a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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MC33262PG MC33262PG ONSEMI mc34262-d.pdf description Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Output current: 0.5A
Type of integrated circuit: PMIC
Application: SMPS
Output voltage: 6.4V
Kind of package: tube
Case: DIP8
Kind of integrated circuit: PFC controller
Operating voltage: 12...28V DC
Mounting: THT
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53+1.62 EUR
63+1.34 EUR
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MC33262DR2G MC33262DR2G ONSEMI mc34262-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Output current: 0.5A
Type of integrated circuit: PMIC
Application: SMPS
Output voltage: 6.4V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: PFC controller
Operating voltage: 12...28V DC
Mounting: SMD
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MC74HC597ADR2G MC74HC597ADR2G ONSEMI MC74HC597A-D.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 13
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FOD4216 FOD4216 ONSEMI FOD420.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
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FOD4216SD ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
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FOD4216SDV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216SV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216TV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216V ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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MJ15025G MJ15025G ONSEMI MJ15023G.PDF description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
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MJ15023G MJ15023G ONSEMI MJ15023G.PDF description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
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MJ15015G MJ15015G ONSEMI MJ15015G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 6MHz
Produkt ist nicht verfügbar
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MJ15016G MJ15016G ONSEMI 2n3055a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Produkt ist nicht verfügbar
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D45H11G D45H11G ONSEMI D44H-D.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
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2SC5569-TD-E 2SC5569-TD-E ONSEMI 2SA2016-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 560...200
Kind of package: reel; tape
Case: SOT89
Frequency: 330MHz
Collector current: 7A
Mounting: SMD
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105+0.82 EUR
126+0.68 EUR
136+0.63 EUR
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2SC5566-TD-E 2SC5566-TD-E ONSEMI 2SA2013-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
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NSVBAT54HT1G NSVBAT54HT1G ONSEMI bat54ht1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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455+0.19 EUR
610+0.14 EUR
747+0.11 EUR
985+0.087 EUR
1437+0.06 EUR
1839+0.046 EUR
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MJF44H11G MJF44H11G ONSEMI MJF44H11G-DTE.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 469 Stücke:
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27+3.17 EUR
56+1.54 EUR
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MJB44H11G MJB44H11G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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MJB44H11T4G MJB44H11T4G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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KSE44H11 KSE44H11 ONSEMI KSE44H.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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NJW44H11G ONSEMI njw44h11-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJB44H11T4G NJVMJB44H11T4G ONSEMI mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N3442G 2N3442G ONSEMI 2N3442.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Produkt ist nicht verfügbar
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FQD8P10TM FQD8P10.pdf
FQD8P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1533 Stücke:
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55+1.57 EUR
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FQD7P20TM FQD7P20.pdf
FQD7P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQB22P10TM FQB22P10.pdf
FQB22P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQP17P06 FQP17P06.pdf
FQP17P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
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FQT7N10LTF FQT7N10L.pdf
FQT7N10LTF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2492 Stücke:
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88+0.98 EUR
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FQD3P50TM FQD3P50.pdf
FQD3P50TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQB34P10TM FQB34P10.pdf
FQB34P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 312 Stücke:
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FQD12N20LTM FQD12N20L.pdf
FQD12N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC2523P FDMC2523P.pdf
FDMC2523PFDMC2523P
FDMC2523PFDMC2523P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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32+2.69 EUR
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FQB12P20TM FQB12P20.pdf
FQB12P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 286 Stücke:
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34+2.53 EUR
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FQPF47P06 FQPF47P06.pdf
FQPF47P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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FQB47P06TM-AM002 FQB47P06.pdf
FQB47P06TM-AM002
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 627 Stücke:
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FQA70N10 FQA70N10.pdf
FQA70N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
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FQD13N10LTM FQD13N10L.pdf
FQD13N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 899 Stücke:
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57+1.5 EUR
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FQD19N10LTM FQD19N10L.pdf
FQD19N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1467 Stücke:
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42+2.06 EUR
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FQT4N20LTF FQT4N20L.pdf
FQT4N20LTF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3128 Stücke:
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80+1.07 EUR
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FQPF19N20C fqpf19n20c-d.pdf
FQPF19N20C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 990 Stücke:
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30+2.88 EUR
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FQD13N06LTM FQD13N06L.pdf
FQD13N06LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2023 Stücke:
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FQP6N80C FQP6N80C.pdf
FQP6N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 139 Stücke:
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FQB5N90TM FQB5N90.pdf
FQB5N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 158W
Gate charge: 40nC
Technology: QFET®
auf Bestellung 683 Stücke:
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23+3.84 EUR
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FQP45N15V2 FQP45N15V2.pdf
FQP45N15V2
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 220W
Gate charge: 94nC
Polarisation: unipolar
Technology: QFET®
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 40mΩ
auf Bestellung 56 Stücke:
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FQB55N10TM FQB55N10.pdf
FQB55N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 235 Stücke:
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FQB19N20LTM FQB19N20L.pdf
FQB19N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 620 Stücke:
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FQD6N40CTM FQD6N40C.pdf
FQD6N40CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
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36+2.38 EUR
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66+1.31 EUR
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FQP11N40C FQP11N40C.pdf
FQP11N40C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
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FQD9N25TM-F080 ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw
FQD9N25TM-F080
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Produkt ist nicht verfügbar
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MC7905CTG description MC7900-D.PDF
MC7905CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Tolerance: ±4%
Mounting: THT
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: 0...125°C
Heatsink thickness: 0.508...0.61mm
Output voltage: -5V
Kind of package: tube
Case: TO220AB
Number of channels: 1
auf Bestellung 191 Stücke:
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112+0.76 EUR
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169+0.5 EUR
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NV24C512MUW3VTBG NV24C512MUW-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C512YE-GT3 CAV24C512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SA5534ADR2G ne5534-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 13V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 200nA
Case: SO8
Number of channels: single; 1
Bandwidth: 10MHz
Produkt ist nicht verfügbar
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MJ802G mj802-d.pdf
MJ802GMJ802G
MJ802GMJ802G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
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9+10.2 EUR
11+8.34 EUR
12+7.45 EUR
50+7.24 EUR
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PIR-GEVB PIR-GEVB_Web.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Kit contents: prototype board
Components: NCS36000
Connection: Pmod connector
Interface: GPIO; I2C
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
Produkt ist nicht verfügbar
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GBPC2508 GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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GBPC2508W GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
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MC33274ADR2G MC3327xA.PDF
MC33274ADR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
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72+1.19 EUR
76+1.12 EUR
101+0.84 EUR
115+0.75 EUR
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MC33274ADTBR2G mc33272a-d.pdf
MC33274ADTBR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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MC33262PG description mc34262-d.pdf
MC33262PG
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Output current: 0.5A
Type of integrated circuit: PMIC
Application: SMPS
Output voltage: 6.4V
Kind of package: tube
Case: DIP8
Kind of integrated circuit: PFC controller
Operating voltage: 12...28V DC
Mounting: THT
auf Bestellung 63 Stücke:
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53+1.62 EUR
63+1.34 EUR
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MC33262DR2G mc34262-d.pdf
MC33262DR2G
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Output current: 0.5A
Type of integrated circuit: PMIC
Application: SMPS
Output voltage: 6.4V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: PFC controller
Operating voltage: 12...28V DC
Mounting: SMD
Produkt ist nicht verfügbar
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MC74HC597ADR2G MC74HC597A-D.pdf
MC74HC597ADR2G
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 13
Produkt ist nicht verfügbar
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FOD4216 FOD420.pdf
FOD4216
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
Produkt ist nicht verfügbar
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FOD4216SD fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
Produkt ist nicht verfügbar
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FOD4216SDV fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
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FOD4216SV fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
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FOD4216TV fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
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FOD4216V fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MJ15025G description MJ15023G.PDF
MJ15025G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
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MJ15023G description MJ15023G.PDF
MJ15023G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
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MJ15015G MJ15015G.PDF
MJ15015G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 6MHz
Produkt ist nicht verfügbar
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MJ15016G 2n3055a-d.pdf
MJ15016G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Produkt ist nicht verfügbar
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D45H11G D44H-D.PDF
D45H11G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 38 Stücke:
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38+2.25 EUR
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2SC5569-TD-E 2SA2016-D.PDF
2SC5569-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 560...200
Kind of package: reel; tape
Case: SOT89
Frequency: 330MHz
Collector current: 7A
Mounting: SMD
auf Bestellung 202 Stücke:
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69+1.24 EUR
105+0.82 EUR
126+0.68 EUR
136+0.63 EUR
200+0.58 EUR
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2SC5566-TD-E 2SA2013-D.PDF
2SC5566-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
auf Bestellung 762 Stücke:
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67+1.27 EUR
106+0.8 EUR
138+0.62 EUR
156+0.55 EUR
500+0.4 EUR
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NSVBAT54HT1G bat54ht1-d.pdf
NSVBAT54HT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2689 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
610+0.14 EUR
747+0.11 EUR
985+0.087 EUR
1437+0.06 EUR
1839+0.046 EUR
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MJF44H11G MJF44H11G-DTE.PDF
MJF44H11G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.17 EUR
56+1.54 EUR
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MJB44H11G mjb44h11-d.pdf
MJB44H11G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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MJB44H11T4G mjb44h11-d.pdf
MJB44H11T4G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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KSE44H11 KSE44H.pdf
KSE44H11
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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NJW44H11G njw44h11-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJB44H11T4G mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw
NJVMJB44H11T4G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N3442G 2N3442.PDF
2N3442G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Produkt ist nicht verfügbar
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