FQPF5N50CYDTU ON Semiconductor
| Anzahl | Preis |
|---|---|
| 461+ | 1.18 EUR |
| 512+ | 1.04 EUR |
| 1000+ | 0.94 EUR |
| 10000+ | 0.82 EUR |
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Technische Details FQPF5N50CYDTU ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 5, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F-3 (Y-Forming), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Formed Leads, Packaging: Bulk.
Weitere Produktangebote FQPF5N50CYDTU nach Preis ab 1.18 EUR bis 2.76 EUR
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FQPF5N50CYDTU | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220F Tube |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF5N50CYDTU | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 5 Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3 (Y-Forming) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Formed Leads Packaging: Bulk |
auf Bestellung 34463 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF5N50CYDTU | Hersteller : onsemi / Fairchild |
MOSFET 500V N-Channel QFET |
auf Bestellung 3077 Stücke: Lieferzeit 10-14 Tag (e) |
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