| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MC7805CDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; MC7800; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Operating temperature: 0...125°C Voltage drop: 2V Tolerance: ±4% Input voltage: 7...20V Manufacturer series: MC7800 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC7805BD2TR4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC7805ACD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV7805BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FSV10150V | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 150V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.84V Max. forward impulse current: 180A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FQD18N20V2TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Case: DPAK Mounting: SMD On-state resistance: 0.14Ω Drain current: 9.75A Gate-source voltage: ±30V Power dissipation: 83W Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: QFET® Kind of package: reel; tape Polarisation: unipolar Gate charge: 26nC |
auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDD18N20LZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3 Case: DPAK3 Mounting: SMD On-state resistance: 0.125Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 89W Pulsed drain current: 64A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 30nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDPF18N20FT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP Case: TO220FP Mounting: THT On-state resistance: 0.14Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 41W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 20nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NLAS323USG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; -55÷125°C; 2÷5.5VDC Type of integrated circuit: analog switch Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: US8 Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Quiescent current: 2µA Kind of output: SPST-NO x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUN2211T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 0.23W Current gain: 35...60 |
auf Bestellung 17235 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2214T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 0.23W |
auf Bestellung 3810 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA113EM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.26W Current gain: 3...5 |
auf Bestellung 23966 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN2111T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Application: automotive industry Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 0.23W |
auf Bestellung 2044 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2233T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 5990 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2213T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 0.23W |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN2214T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Application: automotive industry Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 0.23W |
auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN2213T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ Application: automotive industry Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 0.23W |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2113T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 47kΩ Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 338mW Current gain: 80...140 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 10kΩ Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Case: SC59 Mounting: SMD Collector current: 0.1A Power dissipation: 338mW Current gain: 35...60 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FFSP2065B | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 22.5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP2065A | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 25A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP2065B-F085 | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Kind of package: tube Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSP2065BDN-F085 | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 1.7V Kind of package: tube Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUR460 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Kind of package: bulk Case: DO27 Reverse recovery time: 50ns Forward voltage at If: 1.25V Max. load current: 4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCV1117DT12RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 12V Output current: 1A Case: DPAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1956 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP551SN30T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 10mA; TSOP5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 3V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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D44VH10G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 50MHz |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC00ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Family: HC Kind of package: reel; tape Technology: CMOS |
auf Bestellung 2304 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC00M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Family: HC Kind of package: tube Technology: CMOS Quiescent current: 20µA |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC00ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Family: HC Kind of package: tube Technology: CMOS Delay time: 15ns |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC00ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Family: HC Kind of package: reel; tape Technology: CMOS Delay time: 15ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC00MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Family: HC Kind of package: reel; tape Technology: CMOS Delay time: 8ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC00MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 8ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Family: HC Kind of package: reel; tape Technology: CMOS Delay time: 8ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HCT00MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns Type of integrated circuit: digital Family: HCT Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 14ns Number of inputs: 2 Technology: CMOS Supply voltage: 4.5...5.5V DC Case: TSSOP14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HCT00MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Family: HCT Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 14ns Number of inputs: 2 Technology: CMOS Supply voltage: 4.5...5.5V DC Case: SO14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZX84C3V9LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
auf Bestellung 2212 Stücke: Lieferzeit 14-21 Tag (e) |
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CAT809MTBI-GT3 | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 6µA Maximum output current: 20mA Threshold on-voltage: 4.38V Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| CAT809LTBI-GT3 | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCH023N65S3L4 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 65.8A Pulsed drain current: 300A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 19.5mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FCPF400N80Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.9A Power dissipation: 35.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCP400N80Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 195W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FCD3400N80Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.2A Power dissipation: 32W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBT6428LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23 Polarisation: bipolar Mounting: SMD Type of transistor: NPN Kind of transistor: RF Case: SOT23 Collector current: 0.2A Power dissipation: 0.225/0.3W Collector-emitter voltage: 50V Current gain: 250...650 Kind of package: reel; tape Frequency: 700MHz |
auf Bestellung 2315 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVBT2222ADW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BAT54C | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SBAT54CLT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAT54CTT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT416 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BAT54CXV3T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SC89 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.24W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MBRAF3200T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.62V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MBRAF440T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 40V; 4A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 4A Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.44V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MBRAF260T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.55V Max. forward impulse current: 60A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
NTA4153NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.915A Power dissipation: 0.3W Case: SC75 Gate-source voltage: ±6V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 1.82nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1808 Stücke: Lieferzeit 14-21 Tag (e) |
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|
1N4448WS | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323F Max. forward voltage: 1V Kind of package: reel; tape |
auf Bestellung 1214 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD5481MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; bidirectional; X3DFN2; reel,tape Case: X3DFN2 Kind of package: reel; tape Type of diode: TVS Mounting: SMD Max. off-state voltage: 5V Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZESD9902MLT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; SOT23; Ch: 2; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Application: automotive industry Semiconductor structure: bidirectional Type of diode: TVS array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
NUP2105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Kind of package: reel; tape Application: CAN Version: ESD |
auf Bestellung 8565 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM358EDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Input offset current: 150nA Input offset voltage: 9mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Bandwidth: 1.1MHz Case: SO8 Number of channels: dual; 2 Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: 0...70°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3020SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 30mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Output voltage: 400V Slew rate: 1kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3020SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Output voltage: 400V Slew rate: 1kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3020TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 30mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC7805CDTRKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; MC7800; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Operating temperature: 0...125°C
Voltage drop: 2V
Tolerance: ±4%
Input voltage: 7...20V
Manufacturer series: MC7800
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; MC7800; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Operating temperature: 0...125°C
Voltage drop: 2V
Tolerance: ±4%
Input voltage: 7...20V
Manufacturer series: MC7800
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC7805BD2TR4G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC7805ACD2TR4G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV7805BD2TR4G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV10150V |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD18N20V2TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
On-state resistance: 0.14Ω
Drain current: 9.75A
Gate-source voltage: ±30V
Power dissipation: 83W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: QFET®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 26nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
On-state resistance: 0.14Ω
Drain current: 9.75A
Gate-source voltage: ±30V
Power dissipation: 83W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: QFET®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 26nC
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.76 EUR |
| 57+ | 1.26 EUR |
| 100+ | 0.86 EUR |
| FDD18N20LZ |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDPF18N20FT |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLAS323USG |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; -55÷125°C; 2÷5.5VDC
Type of integrated circuit: analog switch
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 2µA
Kind of output: SPST-NO x2
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; -55÷125°C; 2÷5.5VDC
Type of integrated circuit: analog switch
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 2µA
Kind of output: SPST-NO x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN2211T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
Current gain: 35...60
auf Bestellung 17235 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1000+ | 0.072 EUR |
| 1429+ | 0.05 EUR |
| 1684+ | 0.042 EUR |
| 2565+ | 0.028 EUR |
| 2995+ | 0.024 EUR |
| 3624+ | 0.02 EUR |
| 6000+ | 0.018 EUR |
| 9000+ | 0.017 EUR |
| MUN2214T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
auf Bestellung 3810 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 610+ | 0.12 EUR |
| 1188+ | 0.06 EUR |
| 1839+ | 0.039 EUR |
| 2146+ | 0.033 EUR |
| 3000+ | 0.027 EUR |
| DTA113EM3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.26W
Current gain: 3...5
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.26W
Current gain: 3...5
auf Bestellung 23966 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 1316+ | 0.054 EUR |
| 1359+ | 0.053 EUR |
| 1421+ | 0.05 EUR |
| 1480+ | 0.048 EUR |
| 1548+ | 0.046 EUR |
| 1624+ | 0.044 EUR |
| 2000+ | 0.042 EUR |
| SMUN2111T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Application: automotive industry
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Application: automotive industry
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 569+ | 0.13 EUR |
| 898+ | 0.08 EUR |
| 1214+ | 0.059 EUR |
| 1367+ | 0.052 EUR |
| MUN2233T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 5990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 538+ | 0.13 EUR |
| 942+ | 0.076 EUR |
| 1525+ | 0.047 EUR |
| 1825+ | 0.039 EUR |
| 3000+ | 0.031 EUR |
| MUN2213T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 480+ | 0.14 EUR |
| SMUN2214T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Application: automotive industry
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Application: automotive industry
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 603+ | 0.12 EUR |
| 958+ | 0.075 EUR |
| 1292+ | 0.055 EUR |
| 1458+ | 0.049 EUR |
| SMUN2213T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Application: automotive industry
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Application: automotive industry
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.23W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 642+ | 0.11 EUR |
| 860+ | 0.083 EUR |
| 969+ | 0.074 EUR |
| 1270+ | 0.056 EUR |
| 1413+ | 0.051 EUR |
| 3000+ | 0.043 EUR |
| MUN2113T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 338mW
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 338mW
Current gain: 80...140
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 604+ | 0.12 EUR |
| 1161+ | 0.062 EUR |
| 1619+ | 0.044 EUR |
| 3000+ | 0.031 EUR |
| MUN2111T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 338mW
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59
Mounting: SMD
Collector current: 0.1A
Power dissipation: 338mW
Current gain: 35...60
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 674+ | 0.11 EUR |
| 1109+ | 0.064 EUR |
| 1806+ | 0.04 EUR |
| 3000+ | 0.035 EUR |
| 6000+ | 0.031 EUR |
| FFSP2065B |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP2065A |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP2065B-F085 |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSP2065BDN-F085 |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR460 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV1117DT12RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1956 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 161+ | 0.45 EUR |
| 188+ | 0.38 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |
| NCP551SN30T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 229+ | 0.31 EUR |
| 246+ | 0.29 EUR |
| 278+ | 0.26 EUR |
| 299+ | 0.24 EUR |
| D44VH10G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 112+ | 0.64 EUR |
| 116+ | 0.62 EUR |
| MC74HC00ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
auf Bestellung 2304 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 248+ | 0.29 EUR |
| 278+ | 0.26 EUR |
| 291+ | 0.25 EUR |
| MM74HC00M | ![]() |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Family: HC
Kind of package: tube
Technology: CMOS
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Family: HC
Kind of package: tube
Technology: CMOS
Quiescent current: 20µA
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 232+ | 0.31 EUR |
| 248+ | 0.29 EUR |
| 265+ | 0.27 EUR |
| 278+ | 0.26 EUR |
| 302+ | 0.24 EUR |
| MC74HC00ADG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: tube
Technology: CMOS
Delay time: 15ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: tube
Technology: CMOS
Delay time: 15ns
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| MC74HC00ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Delay time: 15ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Delay time: 15ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC00MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Delay time: 8ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Delay time: 8ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC00MX | ![]() |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 8ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Delay time: 8ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 8ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Delay time: 8ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT00MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns
Type of integrated circuit: digital
Family: HCT
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 14ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 4.5...5.5V DC
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns
Type of integrated circuit: digital
Family: HCT
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 14ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 4.5...5.5V DC
Case: TSSOP14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT00MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Family: HCT
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 14ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 4.5...5.5V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Family: HCT
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 14ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 4.5...5.5V DC
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C3V9LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 2212 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 1429+ | 0.05 EUR |
| 2212+ | 0.033 EUR |
| CAT809MTBI-GT3 |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT809LTBI-GT3 |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| FCH023N65S3L4 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 65.8A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 19.5mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 65.8A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 19.5mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF400N80Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.02 EUR |
| 23+ | 3.23 EUR |
| 25+ | 2.92 EUR |
| 50+ | 2.33 EUR |
| FCP400N80Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 195W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 195W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
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| FCD3400N80Z |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.2A
Power dissipation: 32W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.2A
Power dissipation: 32W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 4A
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| MMBT6428LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 50V
Current gain: 250...650
Kind of package: reel; tape
Frequency: 700MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 50V
Current gain: 250...650
Kind of package: reel; tape
Frequency: 700MHz
auf Bestellung 2315 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 506+ | 0.14 EUR |
| 734+ | 0.098 EUR |
| 867+ | 0.083 EUR |
| 1270+ | 0.056 EUR |
| 1493+ | 0.048 EUR |
| NSVBT2222ADW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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| BAT54C |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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| SBAT54CLT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.59 EUR |
| BAT54CTT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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| BAT54CXV3T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
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| MBRAF3200T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.62V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.62V
Max. forward impulse current: 100A
Kind of package: reel; tape
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| MBRAF440T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.44V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.44V
Max. forward impulse current: 100A
Kind of package: reel; tape
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| MBRAF260T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Kind of package: reel; tape
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| NTA4153NT1G | ![]() |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.915A
Power dissipation: 0.3W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 1.82nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.915A
Power dissipation: 0.3W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 1.82nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1808 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 391+ | 0.18 EUR |
| 713+ | 0.1 EUR |
| 1047+ | 0.068 EUR |
| 1220+ | 0.059 EUR |
| 1N4448WS |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
auf Bestellung 1214 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 962+ | 0.074 EUR |
| 1214+ | 0.059 EUR |
| ESD5481MUT5G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
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| SZESD9902MLT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT23; Ch: 2; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT23; Ch: 2; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS array
Produkt ist nicht verfügbar
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| NUP2105LT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 8565 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 272+ | 0.26 EUR |
| 363+ | 0.2 EUR |
| 472+ | 0.15 EUR |
| 610+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 3000+ | 0.09 EUR |
| LM358EDR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Input offset current: 150nA
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Bandwidth: 1.1MHz
Case: SO8
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Input offset current: 150nA
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Bandwidth: 1.1MHz
Case: SO8
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
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| MOC3020SM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Output voltage: 400V
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Output voltage: 400V
Slew rate: 1kV/μs
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| MOC3020SR2M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Output voltage: 400V
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Output voltage: 400V
Slew rate: 1kV/μs
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| MOC3020TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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