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NJL1302DG ONSEMI njl3281d-d.pdf Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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UJ4C075060K4S ONSEMI UJ4C075060K4S-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TS393DR2G ONSEMI ncv2393-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
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NCV2393DR2G ONSEMI ncv2393-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
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NS5B1G385DFT2G NS5B1G385DFT2G ONSEMI ns5b1g385-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SC70
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Kind of output: SPST-NO
Produkt ist nicht verfügbar
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BD242CG BD242CG ONSEMI bd241c-d.pdf ONSM-S-A0003590441-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Mounting: THT
Case: TO220AB
Kind of package: tube
Current gain: 25
Collector current: 3A
Power dissipation: 40W
Collector-emitter voltage: 100V
Frequency: 3MHz
Polarisation: bipolar
auf Bestellung 137 Stücke:
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NL27WZ17DFT2G-L22348 ONSEMI nl27wz17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
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NL27WZ17DFT2G-Q ONSEMI nl27wz17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
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FDS89161 FDS89161 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE714315B04C259&compId=FDS89161.pdf?ci_sign=84ea0d10f63123768be2a5a09d915664e90b6920 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SO8
Polarisation: unipolar
Gate charge: 4.1nC
On-state resistance: 176mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
auf Bestellung 2192 Stücke:
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FDS89161LZ FDS89161LZ ONSEMI fds89161lz-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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MCH6661-TL-W ONSEMI ena2280-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.8A
Power dissipation: 0.8W
Case: MCPH6
Gate-source voltage: ±20V
On-state resistance: 188mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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S3D S3D ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
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229+0.31 EUR
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309+0.23 EUR
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NCL30059BDR2G ONSEMI ncl30059-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; -1÷0.5A; SO8; SMD; 25÷250kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Mounting: SMD
Kind of package: reel; tape
Topology: resonant LLC
Case: SO8
Operating temperature: -40...125°C
Output current: -1...0.5A
Supply voltage: 9...16V
Frequency: 25...250kHz
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NCP1079BAP130G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
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NCP1079BBP065G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 59...71kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
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NCP1589BMNTXG ONSEMI ncp1589a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Type of integrated circuit: PMIC
Output current: 1.5A
Case: DFN10
Mounting: SMD
Frequency: 540...660kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...70°C
Operating voltage: 4.5...13.2V DC
Produkt ist nicht verfügbar
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1N5341BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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NSVBAT54LT1G ONSEMI bat54lt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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NST65011MW6T1G ONSEMI nst65011mw6-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FQP45N15V2 FQP45N15V2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781980BD260172259&compId=FQP45N15V2.pdf?ci_sign=8444b3bc5ec36b39140a6ede4d6c706faa131bf6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
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FQPF45N15V2 FQPF45N15V2 ONSEMI fqpf45n15v2-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PZTA92T1G PZTA92T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD19C1E04110469&compId=PZTA92T1G.PDF?ci_sign=5155cf7ed4ab257b98f0f7594162010ed984a0c9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 2738 Stücke:
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125+0.57 EUR
162+0.44 EUR
230+0.31 EUR
269+0.27 EUR
455+0.16 EUR
481+0.15 EUR
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NSVPZTA92T1G ONSEMI pzta92t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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NSVPZTA92T3G ONSEMI pzta92t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NUD3160DMT1G NUD3160DMT1G ONSEMI nud3160-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SC74
Mounting: SMD
Output current: 0.2A
On-state resistance: 1.8Ω
Kind of integrated circuit: low-side
Number of channels: 2
Kind of output: N-Channel
Produkt ist nicht verfügbar
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SZNUD3160DMT1G ONSEMI nud3160-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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NTB082N65S3F ONSEMI ntb082n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTP082N65S3F ONSEMI ntp082n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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NVB082N65S3F ONSEMI nvb082n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL082N65S3F ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDA83EB636A24F420C4&compId=NTHL082N65S3F.pdf?ci_sign=350d8b222e0cd167e8eead474732b64699a8bb46 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
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NTHL082N65S3HF ONSEMI nthl082n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
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NTPF082N65S3F ONSEMI ntpf082n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVHL082N65S3F ONSEMI nvhl082n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVHL082N65S3HF ONSEMI nvhl082n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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NST45011MW6T1G ONSEMI nst45011mw6-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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FQB19N20CTM FQB19N20CTM ONSEMI FQB19N20C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 76A
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MC14008BDR2G MC14008BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759040D3&compId=MC14008B-D.pdf?ci_sign=0a42822db7c59a88e3aec077d84b513cf6944eea Category: Other logic integrated circuits
Description: IC: digital; 4bit,binary adder; CMOS; 3÷18VDC; SMD; SOIC16
Case: SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 4bit; binary adder
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LM258N LM258N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EC5324E8DD5EA&compId=LM258N.pdf?ci_sign=5d434e955dfe687a2837f56207f6215941d7ab64 description Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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FDMS8460 FDMS8460 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF709882267E28&compId=FDMS8460.pdf?ci_sign=c41291fe8962da25f420fb816b8093dfd17de685 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Case: PQFN8
Produkt ist nicht verfügbar
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NVD5C460NLT4G ONSEMI nvd5c460nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 395A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 395A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVD5C460NT4G ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 379A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 379A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS5C460NLT1G ONSEMI ntmfs5c460nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 78A; Idm: 520A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Pulsed drain current: 520A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS5C460NLTAG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 74A; Idm: 321A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 74A
Pulsed drain current: 321A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C460NT1G ONSEMI nvmfs5c460n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TIP115G TIP115G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1F3FCFCC40469&compId=TIP115G.PDF?ci_sign=c67cd5be4eea161253983dfc6259f437737d2fc1 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MBR140SFT1G MBR140SFT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B59D1839DC0D0A17&compId=MBR140SF.PDF?ci_sign=375a7638cf14e436d2fa0fd0451e5135a411b536 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
240+0.3 EUR
Mindestbestellmenge: 179
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MPSA92G MPSA92G ONSEMI mpsa92-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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MJD210G MJD210G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB8BD82016DD2143&compId=MJD210G.pdf?ci_sign=d7157ac90b47489720b2d477a29db2da88b3ec4a Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
auf Bestellung 189 Stücke:
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66+1.09 EUR
117+0.62 EUR
137+0.52 EUR
189+0.37 EUR
Mindestbestellmenge: 66
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MJD5731T4G ONSEMI mjd5731-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Current gain: 30...175
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Produkt ist nicht verfügbar
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2SB1215S-TL-E ONSEMI en2539-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Case: DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 1W
Polarisation: bipolar
Collector-emitter voltage: 100V
Current gain: 140...280
Kind of package: reel; tape
Type of transistor: PNP
Produkt ist nicht verfügbar
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NCP115CMX120TCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Produkt ist nicht verfügbar
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NCV8408BDTRKG ONSEMI ncv8408-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 10A; Ch: 1; N-Channel; SMD; DPAK; 42V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 55mΩ
Supply voltage: 42V
Application: automotive industry
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.7 EUR
Mindestbestellmenge: 2500
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NCP803SN463T1G NCP803SN463T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Produkt ist nicht verfügbar
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NCP803SN263T1G NCP803SN263T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Produkt ist nicht verfügbar
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NCP803SN120T1G NCP803SN120T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.2V
Produkt ist nicht verfügbar
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NCP803SN160T1G NCP803SN160T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Produkt ist nicht verfügbar
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NCP803SN232T1G NCP803SN232T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.32V
Produkt ist nicht verfügbar
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NCP803SN293D2T1G NCP803SN293D2T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Produkt ist nicht verfügbar
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NCP803SN293D3T1G NCP803SN293D3T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Produkt ist nicht verfügbar
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NCP803SN293T1G NCP803SN293T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Produkt ist nicht verfügbar
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NJL1302DG njl3281d-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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UJ4C075060K4S UJ4C075060K4S-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TS393DR2G ncv2393-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
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NCV2393DR2G ncv2393-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; 71dB
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Operating voltage: 2.7...16V
Damping coefficient: 71dB
Produkt ist nicht verfügbar
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NS5B1G385DFT2G ns5b1g385-d.pdf
NS5B1G385DFT2G
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SC70
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Kind of output: SPST-NO
Produkt ist nicht verfügbar
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BD242CG bd241c-d.pdf ONSM-S-A0003590441-1.pdf?t.download=true&u=5oefqw
BD242CG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Mounting: THT
Case: TO220AB
Kind of package: tube
Current gain: 25
Collector current: 3A
Power dissipation: 40W
Collector-emitter voltage: 100V
Frequency: 3MHz
Polarisation: bipolar
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
95+0.76 EUR
121+0.59 EUR
129+0.55 EUR
Mindestbestellmenge: 57
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NL27WZ17DFT2G-L22348 nl27wz17-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 53754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
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NL27WZ17DFT2G-Q nl27wz17-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.038 EUR
Mindestbestellmenge: 3000
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FDS89161 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE714315B04C259&compId=FDS89161.pdf?ci_sign=84ea0d10f63123768be2a5a09d915664e90b6920
FDS89161
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SO8
Polarisation: unipolar
Gate charge: 4.1nC
On-state resistance: 176mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
auf Bestellung 2192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
54+1.33 EUR
55+1.3 EUR
61+1.19 EUR
Mindestbestellmenge: 52
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FDS89161LZ fds89161lz-d.pdf
FDS89161LZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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MCH6661-TL-W ena2280-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.8A
Power dissipation: 0.8W
Case: MCPH6
Gate-source voltage: ±20V
On-state resistance: 188mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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S3D pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe
S3D
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
auf Bestellung 2642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
229+0.31 EUR
274+0.26 EUR
309+0.23 EUR
327+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 167
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NCL30059BDR2G ncl30059-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; -1÷0.5A; SO8; SMD; 25÷250kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Mounting: SMD
Kind of package: reel; tape
Topology: resonant LLC
Case: SO8
Operating temperature: -40...125°C
Output current: -1...0.5A
Supply voltage: 9...16V
Frequency: 25...250kHz
Produkt ist nicht verfügbar
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NCP1079BAP130G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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NCP1079BBP065G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 59...71kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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NCP1589BMNTXG ncp1589a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Type of integrated circuit: PMIC
Output current: 1.5A
Case: DFN10
Mounting: SMD
Frequency: 540...660kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...70°C
Operating voltage: 4.5...13.2V DC
Produkt ist nicht verfügbar
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1N5341BRLG description 1n5333b-d.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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NSVBAT54LT1G bat54lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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NST65011MW6T1G nst65011mw6-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FQP45N15V2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED781980BD260172259&compId=FQP45N15V2.pdf?ci_sign=8444b3bc5ec36b39140a6ede4d6c706faa131bf6
FQP45N15V2
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
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FQPF45N15V2 fqpf45n15v2-d.pdf
FQPF45N15V2
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PZTA92T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD19C1E04110469&compId=PZTA92T1G.PDF?ci_sign=5155cf7ed4ab257b98f0f7594162010ed984a0c9
PZTA92T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 2738 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
162+0.44 EUR
230+0.31 EUR
269+0.27 EUR
455+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 125
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NSVPZTA92T1G pzta92t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NSVPZTA92T3G pzta92t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NUD3160DMT1G nud3160-d.pdf
NUD3160DMT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SC74
Mounting: SMD
Output current: 0.2A
On-state resistance: 1.8Ω
Kind of integrated circuit: low-side
Number of channels: 2
Kind of output: N-Channel
Produkt ist nicht verfügbar
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SZNUD3160DMT1G nud3160-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.37 EUR
Mindestbestellmenge: 3000
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NTB082N65S3F ntb082n65s3f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTP082N65S3F ntp082n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVB082N65S3F nvb082n65s3f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL082N65S3F pVersion=0046&contRep=ZT&docId=005056AB90B41EDA83EB636A24F420C4&compId=NTHL082N65S3F.pdf?ci_sign=350d8b222e0cd167e8eead474732b64699a8bb46
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Produkt ist nicht verfügbar
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NTHL082N65S3HF nthl082n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF082N65S3F ntpf082n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVHL082N65S3F nvhl082n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVHL082N65S3HF nvhl082n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NST45011MW6T1G nst45011mw6-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FQB19N20CTM FQB19N20C.pdf
FQB19N20CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 76A
Produkt ist nicht verfügbar
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MC14008BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759040D3&compId=MC14008B-D.pdf?ci_sign=0a42822db7c59a88e3aec077d84b513cf6944eea
MC14008BDR2G
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; 4bit,binary adder; CMOS; 3÷18VDC; SMD; SOIC16
Case: SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 4bit; binary adder
Produkt ist nicht verfügbar
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LM258N description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EC5324E8DD5EA&compId=LM258N.pdf?ci_sign=5d434e955dfe687a2837f56207f6215941d7ab64
LM258N
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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FDMS8460 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF709882267E28&compId=FDMS8460.pdf?ci_sign=c41291fe8962da25f420fb816b8093dfd17de685
FDMS8460
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Case: PQFN8
Produkt ist nicht verfügbar
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NVD5C460NLT4G nvd5c460nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 395A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 395A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVD5C460NT4G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 379A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 379A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS5C460NLT1G ntmfs5c460nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 78A; Idm: 520A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Pulsed drain current: 520A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS5C460NLTAG
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 74A; Idm: 321A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 74A
Pulsed drain current: 321A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C460NT1G nvmfs5c460n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TIP115G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1F3FCFCC40469&compId=TIP115G.PDF?ci_sign=c67cd5be4eea161253983dfc6259f437737d2fc1
TIP115G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MBR140SFT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B59D1839DC0D0A17&compId=MBR140SF.PDF?ci_sign=375a7638cf14e436d2fa0fd0451e5135a411b536
MBR140SFT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
240+0.3 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
MPSA92G description mpsa92-d.pdf
MPSA92G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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MJD210G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB8BD82016DD2143&compId=MJD210G.pdf?ci_sign=d7157ac90b47489720b2d477a29db2da88b3ec4a
MJD210G
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
117+0.62 EUR
137+0.52 EUR
189+0.37 EUR
Mindestbestellmenge: 66
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MJD5731T4G mjd5731-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Current gain: 30...175
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Produkt ist nicht verfügbar
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2SB1215S-TL-E en2539-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Case: DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 1W
Polarisation: bipolar
Collector-emitter voltage: 100V
Current gain: 140...280
Kind of package: reel; tape
Type of transistor: PNP
Produkt ist nicht verfügbar
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NCP115CMX120TCG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Produkt ist nicht verfügbar
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NCV8408BDTRKG ncv8408-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 10A; Ch: 1; N-Channel; SMD; DPAK; 42V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 55mΩ
Supply voltage: 42V
Application: automotive industry
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.7 EUR
Mindestbestellmenge: 2500
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NCP803SN463T1G max803-d.pdf
NCP803SN463T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Produkt ist nicht verfügbar
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NCP803SN263T1G max803-d.pdf
NCP803SN263T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Produkt ist nicht verfügbar
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NCP803SN120T1G max803-d.pdf
NCP803SN120T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.2V
Produkt ist nicht verfügbar
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NCP803SN160T1G max803-d.pdf
NCP803SN160T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Produkt ist nicht verfügbar
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NCP803SN232T1G max803-d.pdf
NCP803SN232T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.32V
Produkt ist nicht verfügbar
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NCP803SN293D2T1G max803-d.pdf
NCP803SN293D2T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Produkt ist nicht verfügbar
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NCP803SN293D3T1G max803-d.pdf
NCP803SN293D3T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Produkt ist nicht verfügbar
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NCP803SN293T1G max803-d.pdf
NCP803SN293T1G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Produkt ist nicht verfügbar
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