| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQPF6N80T | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.1A Pulsed drain current: 13.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FCP099N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 111A Gate charge: 88nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTHL099N60S5 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 184W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Gate charge: 48nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FCMT199N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 208W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60.6A Gate charge: 57nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FCMT299N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDBL0210N80 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 130nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FAN7388MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V Kind of package: reel; tape Kind of channel: enhancement Case: SO20 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Operating temperature: -40...150°C Output current: 350...650mA Supply voltage: 10...20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MJ15023G | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3 Kind of package: in-tray Mounting: THT Type of transistor: PNP Case: TO3 Collector current: 16A Collector-emitter voltage: 200V Power dissipation: 250W Frequency: 4MHz Polarisation: bipolar |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| BZX84C12 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZBZX84C12LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZBZX84C12ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MC10H125PG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4 Mounting: THT Operating temperature: 0...75°C Number of outputs: 4 Number of channels: 4 Number of inputs: 8 Kind of package: tube Manufacturer series: 10H Case: DIP16 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
MC10H124FNG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 8 Number of channels: 4 Number of inputs: 5 Kind of package: tube Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
MC10H124FNR2G | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 8 Number of channels: 4 Number of inputs: 5 Kind of package: reel; tape Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
MC10H125FNG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 4 Number of channels: 4 Number of inputs: 8 Kind of package: tube Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
MC10H125FNR2G | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 4 Number of channels: 4 Number of inputs: 8 Kind of package: reel; tape Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVR201MXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Type of diode: Schottky switching Case: X2DFN2 Mounting: SMD Max. off-state voltage: 2V Load current: 50mA Semiconductor structure: single diode Max. forward voltage: 0.32V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV24C32WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMYS011N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 173A Power dissipation: 9.1W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGY100T65SCDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Type of transistor: IGBT Case: TO247-3 Gate charge: 157nC Power dissipation: 375W Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Collector-emitter voltage: 650V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS8025S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: Power56 Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 47nC On-state resistance: 4mΩ Power dissipation: 50W Drain current: 49A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FCH070N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 156A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FCH170N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FCP170N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 227W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDB0170N607L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 173nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1620A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NUF6401MNT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Number of channels: 6 Case: DFN12 Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NUF6400MNTBG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Number of channels: 6 Case: DFN12 Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
BAS20LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape |
auf Bestellung 1033 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BAS20HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 625mA Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 3065 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SBAS20HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBAS20LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NC7SV125P5X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: TinyLogic Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 0.9...3.6V DC Family: NC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
SS16 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
BCP68T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 966 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SBCP68T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 50...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP68T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MC74HC153ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC Type of integrated circuit: digital Number of inputs: 5 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Number of channels: 2 Kind of integrated circuit: data selector; multiplexer Manufacturer series: HC |
auf Bestellung 201 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
MC74HC390ADG | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Number of channels: 2 Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Manufacturer series: HC |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MC74HC365ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Kind of output: 3-state Kind of integrated circuit: 3-state; buffer; hex Technology: CMOS Manufacturer series: HC Kind of package: reel; tape |
auf Bestellung 2389 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MC14001UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Kind of gate: NOR Case: SO14 Number of channels: quad; 4 Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 2 Supply voltage: 3...18V DC Kind of package: reel; tape Family: HEF4000B Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
LM317T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 1.5A Case: TO220-3 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Heatsink thickness: 0.51...0.61mm Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
ES2D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Features of semiconductor devices: fast switching Power dissipation: 1.66W Kind of package: reel; tape |
auf Bestellung 2907 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| ES2DAF | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
RGF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
auf Bestellung 2726 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
1SMA5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 3.3V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 3779 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| SZ1SMA5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 3.3V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
GBU8K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated Case: GBU |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
GBU8KS | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated Case: GBU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
MPSA92G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MMBTA42 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.24W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MC14526BDWG | ONSEMI |
Category: Counters/dividers Description: IC: digital; 4bit,binary counter,down counter; Ch: 1; IN: 5; CMOS Type of integrated circuit: digital Number of inputs: 5 Technology: CMOS Mounting: SMD Case: SO16WB Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HEF4000B Number of channels: 1 Kind of integrated circuit: 4bit; binary counter; down counter |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| FAD8253MX-1 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: driver; IGBT gate driver; SO14; 2.5÷3.4A; 4.5÷18VDC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Output current: 2.5...3.4A Pulse fall time: 90ns Impulse rise time: 100ns Supply voltage: 4.5...18V DC Case: SO14 Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MBR0520LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.33V Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
MBR40250G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.86V Max. load current: 80A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MBR40250TG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220-3 Max. forward voltage: 0.86V Max. load current: 80A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MC74HCT541ADWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT Manufacturer series: HCT |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MM74HCT541MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MM74HCT541WM | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Quiescent current: 80µA Manufacturer series: HCT |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| MM74HCT541WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQPF6N80T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP099N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL099N60S5 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCMT199N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCMT299N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDBL0210N80 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN7388MX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ15023G | |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.28 EUR |
| 11+ | 6.51 EUR |
| BZX84C12 |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C12LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C12ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H125PG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H124FNG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H124FNR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H125FNG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H125FNR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVR201MXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C32WE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS011N04CTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY100T65SCDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8025S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH070N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH170N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP170N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB0170N607L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF6401MNT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF6400MNTBG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS20LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
auf Bestellung 1033 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1033+ | 0.069 EUR |
| BAS20HT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3065 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 824+ | 0.087 EUR |
| 1142+ | 0.063 EUR |
| 1313+ | 0.054 EUR |
| 3000+ | 0.037 EUR |
| SBAS20HT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBAS20LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SV125P5X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.9...3.6V DC
Family: NC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.9...3.6V DC
Family: NC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS16 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCP68T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 159+ | 0.45 EUR |
| 200+ | 0.36 EUR |
| 304+ | 0.24 EUR |
| 500+ | 0.17 EUR |
| SBCP68T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBCP68T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC153ADG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Number of inputs: 5
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Number of inputs: 5
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 95+ | 0.76 EUR |
| 105+ | 0.69 EUR |
| 121+ | 0.59 EUR |
| 143+ | 0.5 EUR |
| 169+ | 0.42 EUR |
| MC74HC390ADG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Number of channels: 2
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Number of channels: 2
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Manufacturer series: HC
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 84+ | 0.86 EUR |
| 93+ | 0.77 EUR |
| MC74HC365ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Technology: CMOS
Manufacturer series: HC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Technology: CMOS
Manufacturer series: HC
Kind of package: reel; tape
auf Bestellung 2389 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 275+ | 0.26 EUR |
| 313+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| MC14001UBDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
Family: HEF4000B
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM317T |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 253+ | 0.28 EUR |
| 350+ | 0.2 EUR |
| 397+ | 0.18 EUR |
| ES2DAF |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GF1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGF1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
auf Bestellung 2726 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 1000+ | 0.21 EUR |
| 1SMA5913BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 3779 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 309+ | 0.23 EUR |
| 417+ | 0.17 EUR |
| 472+ | 0.15 EUR |
| 532+ | 0.13 EUR |
| 610+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| SZ1SMA5913BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8K |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 48+ | 1.52 EUR |
| GBU8KS |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA92G | |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA42 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14526BDWG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,down counter; Ch: 1; IN: 5; CMOS
Type of integrated circuit: digital
Number of inputs: 5
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Number of channels: 1
Kind of integrated circuit: 4bit; binary counter; down counter
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,down counter; Ch: 1; IN: 5; CMOS
Type of integrated circuit: digital
Number of inputs: 5
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Number of channels: 1
Kind of integrated circuit: 4bit; binary counter; down counter
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 40+ | 1.8 EUR |
| 47+ | 1.59 EUR |
| 188+ | 1.32 EUR |
| FAD8253MX-1 |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: driver; IGBT gate driver; SO14; 2.5÷3.4A; 4.5÷18VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 2.5...3.4A
Pulse fall time: 90ns
Impulse rise time: 100ns
Supply voltage: 4.5...18V DC
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Category: Buffers, transceivers, drivers
Description: IC: driver; IGBT gate driver; SO14; 2.5÷3.4A; 4.5÷18VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 2.5...3.4A
Pulse fall time: 90ns
Impulse rise time: 100ns
Supply voltage: 4.5...18V DC
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR0520LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.33V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.33V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR40250G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| MBR40250TG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.59 EUR |
| MC74HCT541ADWG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 112+ | 0.64 EUR |
| 116+ | 0.62 EUR |
| MM74HCT541MTC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 98+ | 0.73 EUR |
| 108+ | 0.66 EUR |
| 121+ | 0.59 EUR |
| MM74HCT541WM |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
Manufacturer series: HCT
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 81+ | 0.89 EUR |
| MM74HCT541WMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH