| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.7 EUR |
| 10+ | 11.83 EUR |
| 25+ | 6.62 EUR |
| 100+ | 6.45 EUR |
Produktrezensionen
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Technische Details FFSP10120A onsemi / Fairchild
Description: DIODE SIL CARB 1200V 10A TO220L, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 612pF @ 1V, 100kHz, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote FFSP10120A nach Preis ab 5.64 EUR bis 14.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FFSP10120A | onsemi |
 Description: DIODE SIL CARB 1200V 10A TO220LCurrent - Reverse Leakage @ Vr: 200 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 612pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 13629 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSP10120A | onsemi |
SiC Schottky Diodes TranSic_HV |
auf Bestellung 835 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSP10120A | ON Semiconductor |
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auf Bestellung 755 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSP10120A |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO220L
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 1200V 10A TO220L
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 13629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.47 EUR |
| 50+ | 7.27 EUR |
| 100+ | 6.66 EUR |
| 500+ | 5.64 EUR |
| FFSP10120A |
|
Hersteller: onsemi
SiC Schottky Diodes TranSic_HV
SiC Schottky Diodes TranSic_HV
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.49 EUR |
| 10+ | 7.81 EUR |
| FFSP10120A |
|
Hersteller: ON Semiconductor
auf Bestellung 755 Stücke:
Lieferzeit 21-28 Tag (e)