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1N5934BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 3W; 24V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N5942BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 51V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 51V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N5937BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 33V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BZX79C3V3-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 1N5938BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 36V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: THT Tolerance: ±5% Case: CASE59 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1SMB5938BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SZ1SMA5938BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SZ1SMB5938BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BAV74 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. forward voltage: 1V Power dissipation: 0.35W Max. off-state voltage: 50V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: SOT23 Capacitance: 2pF Reverse recovery time: 4ns Max. forward impulse current: 2A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BAV74LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. forward voltage: 1V Power dissipation: 0.3W Max. off-state voltage: 50V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: SOT23 Capacitance: 2pF Reverse recovery time: 4ns Max. forward impulse current: 0.5A |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2217LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Current gain: 35...60 Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SOT23; TO236AB Collector current: 0.1A |
auf Bestellung 5745 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB082N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.2mΩ Pulsed drain current: 468A Power dissipation: 294W Gate charge: 84nC Polarisation: unipolar Drain current: 83A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NTMFS6D1N08HT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5 Case: DFN5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.5mΩ Pulsed drain current: 468A Power dissipation: 104W Gate charge: 32nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFS6D1N08HT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5 Case: DFN5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.5mΩ Pulsed drain current: 468A Power dissipation: 104W Gate charge: 32nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFSW6D1N08HT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFNW5 Case: DFNW5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.5mΩ Pulsed drain current: 468A Power dissipation: 104W Gate charge: 32nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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HUF75639S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK Mounting: SMD Power dissipation: 200W Gate charge: 130nC Polarisation: unipolar Technology: UltraFET® Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 25mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HUF75639G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247 Mounting: THT Power dissipation: 200W Polarisation: unipolar Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247 On-state resistance: 25mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| HUF75639S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA Mounting: THT Power dissipation: 200W Gate charge: 110nC Polarisation: unipolar Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO262AA On-state resistance: 25mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| HUF75631S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 120W; TO263AB Mounting: SMD Power dissipation: 120W Gate charge: 66nC Polarisation: unipolar Drain current: 33A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO263AB On-state resistance: 40mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LM2904VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LM2904EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NRVUB1660CTT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A x2 Reverse recovery time: 60ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.5V Max. load current: 16A Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD352WT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC70,SOT323; SMD; 7V; reel,tape Type of diode: Schottky switching Case: SC70; SOT323 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Capacitance: 1pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD352LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD353LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD354LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD355LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: common anode; double Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVMMBD352WT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC70,SOT323; SMD; 7V; 10mA; reel,tape Type of diode: Schottky switching Case: SC70; SOT323 Mounting: SMD Max. off-state voltage: 7V Load current: 10mA Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVMMBD353LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF Application: automotive industry Reverse recovery time: 10ns Power dissipation: 0.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVMMBD354LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF Application: automotive industry Power dissipation: 0.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVMUN2233T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 7kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBF4392LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDS8840NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18.6A; Idm: 63A; 2.5W; SO8 Mounting: SMD Pulsed drain current: 63A Power dissipation: 2.5W Gate charge: 103nC Polarisation: unipolar Drain current: 18.6A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 4.5mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBF4392 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -30V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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D44H8G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 40 Frequency: 50MHz |
auf Bestellung 695 Stücke: Lieferzeit 14-21 Tag (e) |
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MC79M08CDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -8V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC33161DR2G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 2...40V DC Case: SO8 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 1.27V Kind of package: reel; tape Number of channels: 2 DC supply current: 560µA Maximum output current: 20mA |
auf Bestellung 2133 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33161DG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Type of integrated circuit: supervisor circuit DC supply current: 560µA Operating temperature: -40...105°C Kind of package: tube Threshold on-voltage: 1.27V Case: SO8 Kind of integrated circuit: power on reset monitor (PoR) Number of channels: 2 Kind of RESET output: open collector Mounting: SMD Supply voltage: 2...40V DC Maximum output current: 20mA Active logical level: low |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33163DWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.5÷40VDC; Uout: 1.25÷40VDC; 3.4A; SO16 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...40V DC Frequency: 50kHz Mounting: SMD Case: SO16 Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Output voltage: 1.25...40V DC Kind of package: tube Output current: 3.4A |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
auf Bestellung 2508 Stücke: Lieferzeit 14-21 Tag (e) |
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MM5Z5V1ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5ZxxST1G |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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NL17SZ07XV5T2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT553 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74VHC125DR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: VHC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...5.5V DC Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74VHC125DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: VHC Supply voltage: 2...5.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MM3Z6V2T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
auf Bestellung 8466 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMM3Z6V2T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74LCX08DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Family: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM121BR2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Mounting: SMD Case: MFP4 Insulation voltage: 3.75kV Manufacturer series: FODM121 Collector-emitter voltage: 80V CTR@If: 50-150%@5mA Kind of output: transistor Max. off-state voltage: 6V Type of optocoupler: optocoupler Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.187W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Base-emitter resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.385W Polarisation: bipolar Kind of transistor: BRT Application: automotive industry Type of transistor: PNP x2 Current gain: 8...15 Kind of package: reel; tape Base-emitter resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSP50 | ONSEMI |
 Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
NTD3055-150T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 28.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 27A Gate charge: 7.1nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FAN3122CMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOIC8 Output current: -11.4...10.6A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FAN3122CMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: WDFN8 Output current: -11.4...10.6A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -55...150°C Kind of package: reel; tape Kind of output: non-inverting Pulse fall time: 19ns Impulse rise time: 23ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FAN3122TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOIC8 Output current: -11.4...10.6A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -55...150°C Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FAN3122CMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOIC8 Output current: -11.4...10.6A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
H11D1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Number of channels: 1 Mounting: SMD Collector-emitter voltage: 300V CTR@If: 20%@10mA Kind of output: transistor Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 5µs Case: PDIP6 Turn-off time: 5µs |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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H11D1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Number of channels: 1 Mounting: THT Collector-emitter voltage: 300V CTR@If: 20%@10mA Kind of output: transistor Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 5µs Case: DIP6 Turn-off time: 5µs |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| H11D1SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Number of channels: 1 Mounting: SMD Collector-emitter voltage: 300V CTR@If: 20%@10mA Kind of output: transistor Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 5µs Case: PDIP6 Turn-off time: 5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25512HU5I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 512kb EEPROM Kind of interface: serial Memory organisation: 64kx8bit Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM Access time: 40ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1N5934BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5942BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 51V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 51V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5937BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79C3V3-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5938BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: CASE59
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: CASE59
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5938BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMA5938BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMB5938BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV74 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1V
Power dissipation: 0.35W
Max. off-state voltage: 50V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT23
Capacitance: 2pF
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1V
Power dissipation: 0.35W
Max. off-state voltage: 50V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT23
Capacitance: 2pF
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAV74LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1V
Power dissipation: 0.3W
Max. off-state voltage: 50V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT23
Capacitance: 2pF
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1V
Power dissipation: 0.3W
Max. off-state voltage: 50V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT23
Capacitance: 2pF
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| MMUN2217LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 35...60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 35...60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
auf Bestellung 5745 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 747+ | 0.11 EUR |
| 1214+ | 0.07 EUR |
| 1684+ | 0.05 EUR |
| 1938+ | 0.044 EUR |
| 3000+ | 0.036 EUR |
| FDB082N15A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Pulsed drain current: 468A
Power dissipation: 294W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Pulsed drain current: 468A
Power dissipation: 294W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS6D1N08HT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6D1N08HT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFSW6D1N08HT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75639S3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Mounting: SMD
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 25mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Mounting: SMD
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 25mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75639G3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 25mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 25mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75639S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Mounting: THT
Power dissipation: 200W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO262AA
On-state resistance: 25mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Mounting: THT
Power dissipation: 200W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO262AA
On-state resistance: 25mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75631S3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 120W; TO263AB
Mounting: SMD
Power dissipation: 120W
Gate charge: 66nC
Polarisation: unipolar
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263AB
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 120W; TO263AB
Mounting: SMD
Power dissipation: 120W
Gate charge: 66nC
Polarisation: unipolar
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263AB
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LM2904VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2904EDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVUB1660CTT4G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD352WT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD352LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD353LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD354LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD355LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBD352WT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 7V; 10mA; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 7V
Load current: 10mA
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 7V; 10mA; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 7V
Load current: 10mA
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBD353LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Application: automotive industry
Reverse recovery time: 10ns
Power dissipation: 0.3W
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Application: automotive industry
Reverse recovery time: 10ns
Power dissipation: 0.3W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBD354LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Application: automotive industry
Power dissipation: 0.3W
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Application: automotive industry
Power dissipation: 0.3W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN2233T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBF4392LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS8840NZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18.6A; Idm: 63A; 2.5W; SO8
Mounting: SMD
Pulsed drain current: 63A
Power dissipation: 2.5W
Gate charge: 103nC
Polarisation: unipolar
Drain current: 18.6A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 4.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18.6A; Idm: 63A; 2.5W; SO8
Mounting: SMD
Pulsed drain current: 63A
Power dissipation: 2.5W
Gate charge: 103nC
Polarisation: unipolar
Drain current: 18.6A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 4.5mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBF4392 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| D44H8G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 40
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 40
Frequency: 50MHz
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.7 EUR |
| 74+ | 1.15 EUR |
| 96+ | 0.89 EUR |
| 106+ | 0.81 EUR |
| 500+ | 0.75 EUR |
| MC79M08CDTRKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33161DR2G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Number of channels: 2
DC supply current: 560µA
Maximum output current: 20mA
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Number of channels: 2
DC supply current: 560µA
Maximum output current: 20mA
auf Bestellung 2133 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 81+ | 1.06 EUR |
| 87+ | 0.99 EUR |
| MC33161DG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
DC supply current: 560µA
Operating temperature: -40...105°C
Kind of package: tube
Threshold on-voltage: 1.27V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 2
Kind of RESET output: open collector
Mounting: SMD
Supply voltage: 2...40V DC
Maximum output current: 20mA
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
DC supply current: 560µA
Operating temperature: -40...105°C
Kind of package: tube
Threshold on-voltage: 1.27V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 2
Kind of RESET output: open collector
Mounting: SMD
Supply voltage: 2...40V DC
Maximum output current: 20mA
Active logical level: low
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 87+ | 0.99 EUR |
| MC33163DWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷40VDC; Uout: 1.25÷40VDC; 3.4A; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...40V DC
Frequency: 50kHz
Mounting: SMD
Case: SO16
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Output voltage: 1.25...40V DC
Kind of package: tube
Output current: 3.4A
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷40VDC; Uout: 1.25÷40VDC; 3.4A; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...40V DC
Frequency: 50kHz
Mounting: SMD
Case: SO16
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Output voltage: 1.25...40V DC
Kind of package: tube
Output current: 3.4A
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 4.01 EUR |
| 23+ | 3.71 EUR |
| 24+ | 3.65 EUR |
| MM3Z5V1T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
auf Bestellung 2508 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 715+ | 0.12 EUR |
| 834+ | 0.1 EUR |
| 1191+ | 0.071 EUR |
| 1401+ | 0.061 EUR |
| 2017+ | 0.042 EUR |
| 2315+ | 0.037 EUR |
| 2488+ | 0.035 EUR |
| MM5Z5V1ST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxST1G
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 2.18 EUR |
| NL17SZ07XV5T2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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| MC74VHC125DR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| MC74VHC125DTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MM3Z6V2T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
auf Bestellung 8466 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 715+ | 0.12 EUR |
| 893+ | 0.095 EUR |
| 1021+ | 0.083 EUR |
| 1471+ | 0.058 EUR |
| 1786+ | 0.048 EUR |
| 2778+ | 0.031 EUR |
| 2942+ | 0.029 EUR |
| 3049+ | 0.027 EUR |
| SZMM3Z6V2T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74LCX08DTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Family: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM121BR2 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Case: MFP4
Insulation voltage: 3.75kV
Manufacturer series: FODM121
Collector-emitter voltage: 80V
CTR@If: 50-150%@5mA
Kind of output: transistor
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Case: MFP4
Insulation voltage: 3.75kV
Manufacturer series: FODM121
Collector-emitter voltage: 80V
CTR@If: 50-150%@5mA
Kind of output: transistor
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MUN5131DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.187W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.187W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 720+ | 0.12 EUR |
| SMUN5131DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: PNP x2
Current gain: 8...15
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: PNP x2
Current gain: 8...15
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Produkt ist nicht verfügbar
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| BSP50 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| NTD3055-150T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 27A
Gate charge: 7.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 27A
Gate charge: 7.1nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| FAN3122CMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN3122CMPX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
Pulse fall time: 19ns
Impulse rise time: 23ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
Pulse fall time: 19ns
Impulse rise time: 23ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3122TMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3122CMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
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| H11D1SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 300V
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 300V
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 90+ | 0.95 EUR |
| 98+ | 0.87 EUR |
| 105+ | 0.82 EUR |
| 112+ | 0.76 EUR |
| 200+ | 0.71 EUR |
| 500+ | 0.67 EUR |
| H11D1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Number of channels: 1
Mounting: THT
Collector-emitter voltage: 300V
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Case: DIP6
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Number of channels: 1
Mounting: THT
Collector-emitter voltage: 300V
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Case: DIP6
Turn-off time: 5µs
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.02 EUR |
| H11D1SR2VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 300V
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 300V
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CAT25512HU5I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 512kb EEPROM
Kind of interface: serial
Memory organisation: 64kx8bit
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 512kb EEPROM
Kind of interface: serial
Memory organisation: 64kx8bit
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH