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MUN2211T3G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SMUN2211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 134W Gate charge: 99nC |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMD6N02R2G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Version: ESD Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50nA Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SZMMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SZMMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3051SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Kind of package: reel; tape Conform to the norm: VDE Output voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3051SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Kind of package: tube Output voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3051SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Kind of package: reel; tape Output voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MOC3051TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Output voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MOC3051VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Output voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FQB33N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 52mΩ Power dissipation: 127W Gate charge: 51nC Technology: QFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FQB33N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 55mΩ Pulsed drain current: 132A Power dissipation: 127W Gate charge: 40nC Technology: QFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FAN3852UC16X | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC Supply voltage: 1.64...3.63V DC Kind of package: reel; tape Case: WLCSP6 Interface: PDM Number of channels: 1 Mounting: SMD Type of integrated circuit: audio amplifier Operating temperature: -40...85°C Integrated circuit features: microphone preamplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL9V3040D3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74ACT161DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC33275ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Tolerance: ±1% Manufacturer series: MC33275 Input voltage: 0...20V Voltage drop: 1.1V Operating temperature: -40...125°C |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33275ST-5.0T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 3568 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33275DT-3.3RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC33275D-3.0G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: tube Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC33275D-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC33275D-3.3R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC33275D-5.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC33275DT-5.0RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC33275MN-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: DFN8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 13.7A On-state resistance: 0.365Ω Power dissipation: 68W Gate charge: 33.8nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -5...20V Kind of package: reel; tape Case: D2PAK-7 Mounting: SMD Pulsed drain current: 78A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 0.16Ω Power dissipation: 59W Gate charge: 34nC Polarisation: unipolar Technology: SiC Kind of channel: enhancement Gate-source voltage: -15...25V Kind of package: tube Case: TO247-3 Mounting: THT Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 13.7A On-state resistance: 0.365Ω Power dissipation: 68W Gate charge: 33.8nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -5...15V Kind of package: reel; tape Case: D2PAK-7 Mounting: SMD Pulsed drain current: 78A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 337mΩ Power dissipation: 59W Gate charge: 34nC Polarisation: unipolar Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Kind of package: tube Case: TO247-3 Mounting: THT Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12.3A On-state resistance: 224mΩ Power dissipation: 55.5W Gate charge: 34nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -15...25V Kind of package: tube Case: TO247-4 Mounting: THT Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12.3A On-state resistance: 377mΩ Power dissipation: 55.5W Gate charge: 34nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -5...20V Kind of package: tube Case: TO247-4 Mounting: THT Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
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TL431BVDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
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FOD8802A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8 Case: SO8 Mounting: SMD Max. off-state voltage: 6V Turn-off time: 40µs Number of channels: 2 Manufacturer series: FOD8802 Collector-emitter voltage: 75V CTR@If: 35-230%@1mA Slew rate: 10kV/μs Kind of output: transistor Insulation voltage: 2.5kV Type of optocoupler: optocoupler Turn-on time: 6µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTP055N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 132A Power dissipation: 305W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FAN7388MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V Mounting: SMD Supply voltage: 10...20V Output current: 350...650mA Polarisation: unipolar Operating temperature: -40...150°C Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO20 |
Produkt ist nicht verfügbar |
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FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N5375BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Case: CASE017AA Mounting: THT Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
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1N5375BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Case: CASE017AA Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
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1N5342BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5342BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
auf Bestellung 315 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5342BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
auf Bestellung 3831 Stücke: Lieferzeit 14-21 Tag (e) |
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FDH44N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 750W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
auf Bestellung 201 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT4N50NZU | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2A Pulsed drain current: 6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 3Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FQU4N50TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.64A Pulsed drain current: 10.4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
74LCX373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered Kind of output: 3-state Quiescent current: 10µA Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74LCX373MTCX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered Kind of output: 3-state Quiescent current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74LCX373DTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 1.5...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74LCX373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 3W Capacitance: 15pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74HC4851ADG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16 Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC4851ADTR2G-Q | ONSEMI |
Category: Integrated circuits - Unclassified Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC4851AMN1TWG-Q | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1 Type of integrated circuit: multiplexer Number of channels: 1 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Number of inputs: 8 Number of outputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MUN2211T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN2211T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH50T65SQD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.89 EUR |
| 17+ | 5.3 EUR |
| 19+ | 4.68 EUR |
| 30+ | 4.22 EUR |
| 120+ | 3.92 EUR |
| NTMD6N02R2G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ20VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 736+ | 0.12 EUR |
| 848+ | 0.1 EUR |
| 873+ | 0.098 EUR |
| MMBZ20VAWT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMBZ20VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMBZ20VAWT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3051SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3051SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Output voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3051SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Output voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3051TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3051VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB33N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB33N10LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3852UC16X |
|
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V3040D3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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| ISL9V3040D3ST-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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| MC74ACT161DR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCP45524IMNTWG-H |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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| NCP45524IMNTWG-L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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| MC33275ST-3.3T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33275
Input voltage: 0...20V
Voltage drop: 1.1V
Operating temperature: -40...125°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33275
Input voltage: 0...20V
Voltage drop: 1.1V
Operating temperature: -40...125°C
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| MC33275ST-5.0T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 3568 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 242+ | 0.36 EUR |
| 264+ | 0.32 EUR |
| 304+ | 0.29 EUR |
| 329+ | 0.26 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| MC33275DT-3.3RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33275D-3.0G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
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| MC33275D-3.0R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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Stück im Wert von UAH
| MC33275D-3.3R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33275D-5.0R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC33275DT-5.0RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33275MN-3.0R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| NTBG160N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTHL160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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| NVBG160N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...15V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...15V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
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| NVHL160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 337mΩ
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 337mΩ
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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| NTH4L160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 224mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 224mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
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Stück im Wert von UAH
| NVH4L160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 377mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 377mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
Produkt ist nicht verfügbar
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| TL431BVDR2G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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| FOD8802A |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| NTP055N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| FAN7388MX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
Produkt ist nicht verfügbar
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| FGD3040G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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| FGD3040G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGD3040G2-F085V |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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| 1N5375BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Tolerance: ±5%
Produkt ist nicht verfügbar
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| 1N5375BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
Produkt ist nicht verfügbar
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| 1N5342BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.46 EUR |
| 1N5342BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 295+ | 0.29 EUR |
| 305+ | 0.27 EUR |
| 1N5342BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
auf Bestellung 3831 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.76 EUR |
| 196+ | 0.44 EUR |
| 213+ | 0.4 EUR |
| 241+ | 0.36 EUR |
| 264+ | 0.32 EUR |
| 285+ | 0.3 EUR |
| 500+ | 0.26 EUR |
| FDH44N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.54 EUR |
| 9+ | 10.33 EUR |
| 10+ | 9.19 EUR |
| 30+ | 8.52 EUR |
| FDT4N50NZU |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| FQU4N50TU-WS |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX373MTC |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: tube
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| 74LCX373MTCX |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: reel; tape
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| MC74LCX373DTG |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74LCX373DTR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1N4007 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
Capacitance: 15pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| SB540 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| MC74HC4851ADG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC4851ADTR2G-Q |
|
Hersteller: ONSEMI
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| MC74HC4851AMN1TWG-Q |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1
Type of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Number of outputs: 1
Category: Decoders, multiplexers, switches
Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1
Type of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Number of outputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH