Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTHL160N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Mounting: THT Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 59W Polarisation: unipolar Kind of package: tube Gate charge: 34nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -15...25V Pulsed drain current: 69A Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NCP170AMX150TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD Output voltage: 1.5V Output current: 0.15A Manufacturer series: NCP170 Operating temperature: -40...85°C Type of integrated circuit: voltage regulator Number of channels: 1 Tolerance: ±1% Input voltage: 2.2...5.5V Case: XDFN4 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCP170ASN150T2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD Output voltage: 1.5V Output current: 0.15A Manufacturer series: NCP170 Operating temperature: -40...85°C Type of integrated circuit: voltage regulator Number of channels: 1 Tolerance: ±1% Input voltage: 2.2...5.5V Case: TSOP5 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCD1300N80Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 12A Power dissipation: 52W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 16.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
74LVX132MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA Type of integrated circuit: digital Case: TSSOP14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: quad; 4 Quiescent current: 20µA Kind of input: with Schmitt trigger Kind of gate: NAND Family: LVX Number of inputs: 2 Supply voltage: 2...3.6V DC |
auf Bestellung 734 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
74LVX132MX | ONSEMI |
![]() ![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA Type of integrated circuit: digital Case: SO14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: quad; 4 Quiescent current: 20µA Kind of input: with Schmitt trigger Kind of gate: NAND Family: LVX Number of inputs: 2 Supply voltage: 2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NSPU5132MUTBG | ONSEMI |
![]() Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape Case: uDFN6 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 13.5V Semiconductor structure: unidirectional Breakdown voltage: 15.5V Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCV21872DMR2G | ONSEMI |
![]() Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 270kHz Mounting: SMT Case: Micro8 Slew rate: 0.1V/μs Operating temperature: -40...125°C Input offset voltage: 0.045mV Voltage supply range: 1.8...5.5V DC Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA Number of channels: dual |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
TIP42AG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB Collector-emitter voltage: 60V Current gain: 15...75 Collector current: 6A Type of transistor: PNP Power dissipation: 65W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO220AB Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCD5N60TM-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 13.8A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDBL0110N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
GBU8B | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BC858CLT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2452 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
BC858CDXV6T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BC858BLT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NCP1076AAP100G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Operating voltage: 6.5...20V DC Frequency: 90...110kHz On-state resistance: 6.9Ω Output current: 0.65A Type of integrated circuit: PMIC Number of channels: 1 Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Mounting: SMD Operating temperature: -40...125°C Case: DIP8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCP1079BAP130G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Operating voltage: 6.5...20V DC Frequency: 117...143kHz On-state resistance: 3.9Ω Output current: 1.05A Type of integrated circuit: PMIC Number of channels: 1 Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Mounting: SMD Operating temperature: -40...125°C Case: DIP8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
MRA4007T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 1kV Max. load current: 30A Max. forward voltage: 1.18V Load current: 1A Semiconductor structure: single diode |
auf Bestellung 2713 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
NRVA4007T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry Max. load current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
MC14007UBDR2G | ONSEMI |
![]() Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Mounting: SMD Case: SO14 Kind of package: reel; tape Type of integrated circuit: digital Number of channels: dual; 2 Quiescent current: 30µA Kind of gate: combination; NOT Technology: CMOS Kind of integrated circuit: complementary pair Operating temperature: -55...125°C Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FDBL0210N80 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 130nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDB0170N607L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1620A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 173nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
FDS4675 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
FQD7P06TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.42A Power dissipation: 28W Case: DPAK Gate-source voltage: ±25V On-state resistance: 451mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BAS29 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.2A Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward voltage: 1V Max. load current: 0.25A |
auf Bestellung 2604 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
US1AFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape Type of diode: rectifying Case: SOD123F Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
KSD560YTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB Collector-emitter voltage: 100V Collector current: 5A Type of transistor: NPN Power dissipation: 1.5W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
NCV8406ASTT1G | ONSEMI |
![]() Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 60V DC Application: automotive industry Kind of integrated circuit: low-side |
auf Bestellung 972 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
MMBZ5229BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA Semiconductor structure: single diode Zener voltage: 4.3V Leakage current: 5µA Power dissipation: 0.3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMBZ52xxBLT1G Mounting: SMD Case: SOT23 Tolerance: ±5% |
auf Bestellung 5975 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
FDS4672A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
FDS6576 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
NTMS10P02R2G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
74LCX08M | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
74LCX08MTCX | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA |
auf Bestellung 1449 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
74LCX08MX | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MBR30170MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Mounting: SMD Max. off-state voltage: 170V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.74V Max. forward impulse current: 540A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTBG040N120M3S | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NLSV1T34MUTBG | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: uDFN6 Number of inputs: 1 Number of outputs: 1 Supply voltage: 0.9...4.5V DC Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NLSV1T34AMUTCG | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: uDFN6 Number of inputs: 1 Number of outputs: 1 Supply voltage: 0.9...4.5V DC Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NLSV1T34AMX1TCG | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: ULLGA6 Number of inputs: 1 Number of outputs: 1 Supply voltage: 0.9...4.5V DC Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NLVSV1T34DFT2G | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: SC88A Supply voltage: 0.9...4.5V DC Number of channels: 1 Quiescent current: 4µA Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSR02100HT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSVR02100HT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
MMBZ5231BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA Mounting: SMD Case: SOT23 Semiconductor structure: single diode Zener voltage: 5.1V Leakage current: 5µA Tolerance: ±5% Power dissipation: 0.3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMBZ52xxBLT1G |
auf Bestellung 783 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
MJF122G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP Mounting: THT Case: TO220FP Collector-emitter voltage: 100V Collector current: 5A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
1N5252B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: 1N52xxB |
auf Bestellung 4971 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
1N5252BTR | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 24V; reel,tape; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: 1N52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
SB540 | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Kind of package: reel; tape Power dissipation: 5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NCV33035DWR2G | ONSEMI |
![]() Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC Supply voltage: 0...40V DC Operating temperature: -40...85°C Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: brushless motor controller Mounting: SMD Case: SO24 Operating voltage: 10...30V DC Type of integrated circuit: driver Number of channels: 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDD18N20LZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3 Case: DPAK3 Mounting: SMD Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 64A Drain-source voltage: 200V Drain current: 16A On-state resistance: 0.125Ω Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
MC74HCT374ADTR2G | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state; non-inverting Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
MC74HCT374ADWG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: tube Trigger: positive-edge-triggered Kind of output: 3-state; non-inverting Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
MC74HCT374ADWR2G | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state; non-inverting Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MM74HCT374MTCX | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Mounting: SMD Case: TSSOP20WB Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Kind of output: 3-state Manufacturer series: HCT Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
MM74HCT374WM | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered Kind of output: 3-state Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MM74HCT374WMX | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Kind of output: 3-state Manufacturer series: HCT Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSR05F20NXT5G | ONSEMI |
![]() Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky switching Case: 0402 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCP3335AMN250R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; DFN10; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.34V Output voltage: 2.5V Output current: 0.5A Case: DFN10 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
74AC245MTC | ONSEMI |
![]() ![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
74AC245MTCX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
NTHL160N120SC1 |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP170AMX150TCG |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP170ASN150T2G |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCD1300N80Z |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVX132MTCX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
auf Bestellung 734 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
154+ | 0.47 EUR |
186+ | 0.38 EUR |
230+ | 0.31 EUR |
244+ | 0.29 EUR |
253+ | 0.28 EUR |
74LVX132MX |
![]() ![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSPU5132MUTBG |
![]() |
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV21872DMR2G |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.64 EUR |
80+ | 0.90 EUR |
96+ | 0.75 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
TIP42AG |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCD5N60TM-WS |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDBL0110N60 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GBU8B |
![]() |
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC858CLT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2452 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
569+ | 0.13 EUR |
1064+ | 0.07 EUR |
1573+ | 0.05 EUR |
1873+ | 0.04 EUR |
2452+ | 0.03 EUR |
BC858CDXV6T1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC858BLT3G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1076AAP100G |
![]() |
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.9Ω
Output current: 0.65A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.9Ω
Output current: 0.65A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1079BAP130G |
![]() |
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 117...143kHz
On-state resistance: 3.9Ω
Output current: 1.05A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 117...143kHz
On-state resistance: 3.9Ω
Output current: 1.05A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MRA4007T3G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
auf Bestellung 2713 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
432+ | 0.17 EUR |
516+ | 0.14 EUR |
562+ | 0.13 EUR |
834+ | 0.09 EUR |
878+ | 0.08 EUR |
NRVA4007T3G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14007UBDR2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDBL0210N80 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDB0170N607L |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDS4675 |
![]() |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.09 EUR |
48+ | 1.50 EUR |
75+ | 0.96 EUR |
80+ | 0.90 EUR |
500+ | 0.87 EUR |
FQD7P06TM |
![]() |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.42A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 451mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.42A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 451mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS29 | ![]() |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
auf Bestellung 2604 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
307+ | 0.23 EUR |
637+ | 0.11 EUR |
1363+ | 0.05 EUR |
1441+ | 0.05 EUR |
US1AFA |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KSD560YTU |
![]() |
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV8406ASTT1G |
![]() |
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.06 EUR |
49+ | 1.47 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
250+ | 0.96 EUR |
MMBZ5229BLT1G |
![]() |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
546+ | 0.13 EUR |
1000+ | 0.07 EUR |
1946+ | 0.04 EUR |
3049+ | 0.02 EUR |
3226+ | 0.02 EUR |
3356+ | 0.02 EUR |
FDS4672A |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.60 EUR |
54+ | 1.33 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
500+ | 0.90 EUR |
FDS6576 |
![]() |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMS10P02R2G |
![]() |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LCX08M |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LCX08MTCX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
auf Bestellung 1449 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
123+ | 0.58 EUR |
152+ | 0.47 EUR |
243+ | 0.29 EUR |
258+ | 0.28 EUR |
1000+ | 0.27 EUR |
74LCX08MX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR30170MFST1G |
![]() |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 170V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 170V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTBG040N120M3S |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLSV1T34MUTBG |
![]() |
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLSV1T34AMUTCG |
![]() |
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLSV1T34AMX1TCG |
![]() |
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: ULLGA6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: ULLGA6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLVSV1T34DFT2G |
![]() |
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC88A
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Quiescent current: 4µA
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC88A
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Quiescent current: 4µA
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSR02100HT1G |
![]() |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVR02100HT1G |
![]() |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBZ5231BLT1G |
![]() |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
548+ | 0.13 EUR |
783+ | 0.09 EUR |
MJF122G |
![]() |
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.46 EUR |
1N5252B |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
820+ | 0.09 EUR |
1060+ | 0.07 EUR |
1553+ | 0.05 EUR |
2243+ | 0.03 EUR |
2874+ | 0.03 EUR |
3031+ | 0.02 EUR |
1N5252BTR |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SB540 |
![]() |
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV33035DWR2G |
![]() |
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: brushless motor controller
Mounting: SMD
Case: SO24
Operating voltage: 10...30V DC
Type of integrated circuit: driver
Number of channels: 3
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: brushless motor controller
Mounting: SMD
Case: SO24
Operating voltage: 10...30V DC
Type of integrated circuit: driver
Number of channels: 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD18N20LZ |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT374ADTR2G |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT374ADWG |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT374ADWR2G |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT374MTCX |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS; TTL
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT374WM |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT374WMX |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS; TTL
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSR05F20NXT5G |
![]() |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: 0402
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: 0402
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP3335AMN250R2G |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; DFN10; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 2.5V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; DFN10; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 2.5V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AC245MTC | ![]() |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AC245MTCX |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH