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FDMC86259P ONSEMI fdmc86259p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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HGTD1N120BNS9A ONSEMI hgtd1n120bns-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
Produkt ist nicht verfügbar
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FJV992FMTF FJV992FMTF ONSEMI fjv992-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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MOC3010M MOC3010M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F580C7&compId=MOC3010M.pdf?ci_sign=0b1d642be81fd7cbf43484641c53c0c34b78cd40 Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
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MOC3010SM ONSEMI FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf MOC3009_MOC3012Data.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
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KSB1151YS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
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KSB1151YSTU ONSEMI ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
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MMBT2369LT1G MMBT2369LT1G ONSEMI mmbt2369lt1-d.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDB52N20TM FDB52N20TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDEA43EA443E28&compId=FDB52N20.pdf?ci_sign=d43ba8033692a45b011f90f2143d2d3cb4d93be8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
auf Bestellung 438 Stücke:
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28+2.60 EUR
31+2.32 EUR
36+2.00 EUR
38+1.90 EUR
Mindestbestellmenge: 28
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FDMS86255ET150 ONSEMI fdms86255et150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
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GBU8K GBU8K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 521 Stücke:
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41+1.76 EUR
54+1.34 EUR
57+1.27 EUR
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GBU8J GBU8J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 1 Stücke:
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GBU6K GBU6K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 798 Stücke:
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31+2.36 EUR
53+1.36 EUR
72+1.00 EUR
76+0.94 EUR
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GBU6G GBU6G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6A GBU6A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6B GBU6B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6D GBU6D ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6J GBU6J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.19 EUR
14+5.16 EUR
15+4.88 EUR
800+4.79 EUR
Mindestbestellmenge: 10
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MMSZ5231B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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SZMMSZ5231BT1G SZMMSZ5231BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
auf Bestellung 2718 Stücke:
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264+0.27 EUR
353+0.20 EUR
432+0.17 EUR
587+0.12 EUR
913+0.08 EUR
939+0.08 EUR
Mindestbestellmenge: 264
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KSP92BU ONSEMI ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 9860 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
506+0.14 EUR
691+0.10 EUR
905+0.08 EUR
957+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 358
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KSP92TA KSP92TA ONSEMI ksp92-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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NCV8440ASTT1G ONSEMI ncv8440-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
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1N5282TR ONSEMI 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
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2N7000 2N7000 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
auf Bestellung 5401 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
170+0.42 EUR
216+0.33 EUR
404+0.18 EUR
424+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 122
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CAT25020VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C703A0D5&compId=CAT25010-D.pdf?ci_sign=43313a4e9a1143d1146313810913a564e0e78966 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAT25020YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C704E0D5&compId=CAT25010-D.pdf?ci_sign=58ae57f94dd6eb24ebbcd72edfd458cad1bd3cab Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAV25020YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
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BZX84C6V2LT1G BZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
auf Bestellung 5023 Stücke:
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548+0.13 EUR
1000+0.07 EUR
1137+0.06 EUR
1367+0.05 EUR
1511+0.05 EUR
1629+0.04 EUR
3497+0.02 EUR
3704+0.02 EUR
Mindestbestellmenge: 548
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SZBZX84C6V2LT1G SZBZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 2725 Stücke:
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618+0.12 EUR
1177+0.06 EUR
1743+0.04 EUR
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2408+0.03 EUR
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SZBZX84C6V2ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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BZX84B6V2LT1G BZX84B6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
auf Bestellung 4740 Stücke:
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625+0.11 EUR
940+0.08 EUR
1122+0.06 EUR
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2146+0.03 EUR
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SZBZX84B6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
Application: automotive industry
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NDB5060L ONSEMI ndb5060l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Mounting: SMD
Case: D2PAK-3
Drain-source voltage: 60V
Drain current: 26A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 78A
Produkt ist nicht verfügbar
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MC14025BDG MC14025BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
auf Bestellung 200 Stücke:
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102+0.70 EUR
129+0.56 EUR
171+0.42 EUR
175+0.41 EUR
181+0.40 EUR
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GBU4M GBU4M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FCA20N60-F109 ONSEMI fca20n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCMT360N65S3 ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: PQFN4
Pulsed drain current: 25A
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Produkt ist nicht verfügbar
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BCW30LT1G
+1
 		BCW30LT1G ONSEMI bcw30lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 5515 Stücke:
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334+0.21 EUR
589+0.12 EUR
848+0.08 EUR
987+0.07 EUR
1583+0.05 EUR
1656+0.04 EUR
3000+0.04 EUR
Mindestbestellmenge: 334
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SBCW30LT1G SBCW30LT1G ONSEMI bcw30lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FJPF2145TU FJPF2145TU ONSEMI FAIRS44794-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Produkt ist nicht verfügbar
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LM2575D2T-ADJR4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LM2575D2T-ADJG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Produkt ist nicht verfügbar
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FL7760AM6X FL7760AM6X ONSEMI fl7760-d.pdf Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
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MMBFJ175 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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J176-D74Z ONSEMI j175-d.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
Produkt ist nicht verfügbar
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MC14007UBDG MC14007UBDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9585FC2DAA11C&compId=MC14007UBDG.PDF?ci_sign=9de9de01acd654fceed287c2879e2eba6d6ff3b6 Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
auf Bestellung 129 Stücke:
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125+0.57 EUR
129+0.56 EUR
Mindestbestellmenge: 125
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NTHL160N120SC1 NTHL160N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
Produkt ist nicht verfügbar
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NCP170AMX150TCG ONSEMI ncp170-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
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NCP170ASN150T2G ONSEMI ncp170-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
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FCD1300N80Z ONSEMI fcd1300n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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74LVX132MTCX 74LVX132MTCX ONSEMI 74lvx132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
auf Bestellung 734 Stücke:
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95+0.76 EUR
154+0.47 EUR
186+0.38 EUR
230+0.31 EUR
244+0.29 EUR
253+0.28 EUR
Mindestbestellmenge: 95
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74LVX132MX 74LVX132MX ONSEMI 74lvx132-d.pdf FAIRS26108-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
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NSPU5132MUTBG ONSEMI nspu5132-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
Produkt ist nicht verfügbar
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NCV21872DMR2G ONSEMI ncs21871-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
auf Bestellung 3000 Stücke:
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44+1.64 EUR
80+0.90 EUR
96+0.75 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 44
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TIP42AG ONSEMI tip41a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
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FCD5N60TM-WS ONSEMI fcu5n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86259P fdmc86259p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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HGTD1N120BNS9A hgtd1n120bns-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
Produkt ist nicht verfügbar
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FJV992FMTF fjv992-d.pdf
FJV992FMTF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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MOC3010M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F580C7&compId=MOC3010M.pdf?ci_sign=0b1d642be81fd7cbf43484641c53c0c34b78cd40
MOC3010M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
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MOC3010SM FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf MOC3009_MOC3012Data.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
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KSB1151YS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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KSB1151YSTU ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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MMBT2369LT1G description mmbt2369lt1-d.pdf
MMBT2369LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMMBT2369ALT1G mmbt2369lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB52N20TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDEA43EA443E28&compId=FDB52N20.pdf?ci_sign=d43ba8033692a45b011f90f2143d2d3cb4d93be8
FDB52N20TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.60 EUR
31+2.32 EUR
36+2.00 EUR
38+1.90 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86255ET150 fdms86255et150-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
Produkt ist nicht verfügbar
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GBU8K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8K
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
41+1.76 EUR
54+1.34 EUR
57+1.27 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
GBU8J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8J
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GBU6K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6K
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
53+1.36 EUR
72+1.00 EUR
76+0.94 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
GBU6G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6G
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6A
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6B pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6B
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6D pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6D
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6J
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
14+5.16 EUR
15+4.88 EUR
800+4.79 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5231B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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SZMMSZ5231BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
SZMMSZ5231BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
auf Bestellung 2718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
353+0.20 EUR
432+0.17 EUR
587+0.12 EUR
913+0.08 EUR
939+0.08 EUR
Mindestbestellmenge: 264
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KSP92BU ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 9860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
506+0.14 EUR
691+0.10 EUR
905+0.08 EUR
957+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 358
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KSP92TA ksp92-d.pdf
KSP92TA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
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NCV8440ASTT1G ncv8440-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
Produkt ist nicht verfügbar
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1N5282TR 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
Produkt ist nicht verfügbar
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2N7000 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7000
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
auf Bestellung 5401 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
170+0.42 EUR
216+0.33 EUR
404+0.18 EUR
424+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
CAT25020VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C703A0D5&compId=CAT25010-D.pdf?ci_sign=43313a4e9a1143d1146313810913a564e0e78966
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25020YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C704E0D5&compId=CAT25010-D.pdf?ci_sign=58ae57f94dd6eb24ebbcd72edfd458cad1bd3cab
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CAV25020YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
auf Bestellung 5023 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
548+0.13 EUR
1000+0.07 EUR
1137+0.06 EUR
1367+0.05 EUR
1511+0.05 EUR
1629+0.04 EUR
3497+0.02 EUR
3704+0.02 EUR
Mindestbestellmenge: 548
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SZBZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
618+0.12 EUR
1177+0.06 EUR
1743+0.04 EUR
2276+0.03 EUR
2408+0.03 EUR
Mindestbestellmenge: 385
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SZBZX84C6V2ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84B6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84B6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
auf Bestellung 4740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
625+0.11 EUR
940+0.08 EUR
1122+0.06 EUR
2033+0.04 EUR
2146+0.03 EUR
Mindestbestellmenge: 455
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SZBZX84B6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
Application: automotive industry
Produkt ist nicht verfügbar
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NDB5060L ndb5060l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Mounting: SMD
Case: D2PAK-3
Drain-source voltage: 60V
Drain current: 26A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 78A
Produkt ist nicht verfügbar
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MC14025BDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14025BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
102+0.70 EUR
129+0.56 EUR
171+0.42 EUR
175+0.41 EUR
181+0.40 EUR
Mindestbestellmenge: 59
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GBU4M pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4M
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FCA20N60-F109 fca20n60_f109-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCMT360N65S3 fcmt360n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: PQFN4
Pulsed drain current: 25A
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Produkt ist nicht verfügbar
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BCW30LT1G bcw30lt1-d.pdf
BCW30LT1G
+1
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 5515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
589+0.12 EUR
848+0.08 EUR
987+0.07 EUR
1583+0.05 EUR
1656+0.04 EUR
3000+0.04 EUR
Mindestbestellmenge: 334
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SBCW30LT1G bcw30lt1-d.pdf
SBCW30LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDD5N50NZTM fdd5n50nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FJPF2145TU FAIRS44794-1.pdf?t.download=true&u=5oefqw
FJPF2145TU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Produkt ist nicht verfügbar
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LM2575D2T-ADJR4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM2575D2T-ADJG pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Produkt ist nicht verfügbar
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FL7760AM6X fl7760-d.pdf
FL7760AM6X
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
Produkt ist nicht verfügbar
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MMBFJ175 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Produkt ist nicht verfügbar
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J176-D74Z j175-d.pdf
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
Produkt ist nicht verfügbar
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MC14007UBDG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9585FC2DAA11C&compId=MC14007UBDG.PDF?ci_sign=9de9de01acd654fceed287c2879e2eba6d6ff3b6
MC14007UBDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
129+0.56 EUR
Mindestbestellmenge: 125
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NTHL160N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361
NTHL160N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
Produkt ist nicht verfügbar
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NCP170AMX150TCG ncp170-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCP170ASN150T2G ncp170-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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FCD1300N80Z fcd1300n80z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LVX132MTCX 74lvx132-d.pdf
74LVX132MTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
auf Bestellung 734 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
154+0.47 EUR
186+0.38 EUR
230+0.31 EUR
244+0.29 EUR
253+0.28 EUR
Mindestbestellmenge: 95
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74LVX132MX 74lvx132-d.pdf FAIRS26108-1.pdf?t.download=true&u=5oefqw
74LVX132MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
Produkt ist nicht verfügbar
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NSPU5132MUTBG nspu5132-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
Produkt ist nicht verfügbar
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NCV21872DMR2G ncs21871-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
80+0.90 EUR
96+0.75 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 44
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TIP42AG tip41a-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
Produkt ist nicht verfügbar
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FCD5N60TM-WS fcu5n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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