Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (148572) > Seite 2447 nach 2477

Wählen Sie Seite:    << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2442 2443 2444 2445 2446 2447 2448 2449 2450 2451 2452 2470 2477  Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MUR420RLG MUR420RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8FC5376C375260C8&compId=MUR4xx.PDF?ci_sign=5cda600c4686d43b011dfb5c9c7277475bc362fd description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
auf Bestellung 1707 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
117+0.61 EUR
128+0.56 EUR
235+0.3 EUR
249+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
NCP51820AMNTWG ONSEMI ncp51820-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Voltage class: 650V
Output current: -2...1A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 9...17V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD7504MUTAG ONSEMI esd7504-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Kind of package: reel; tape
Case: uDFN10
Capacitance: 0.55pF
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Leakage current: 1µA
Number of channels: 4
Type of diode: TVS array
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR745G MBR745G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869992DAE32DC469&compId=MBR745G.PDF?ci_sign=417dd6d7629969a59a467548528a3a6416e48a10 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
72+1 EUR
91+0.79 EUR
106+0.67 EUR
113+0.64 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DG MC74LCX08DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE04845292C20C7&compId=MC74LCX08DG.pdf?ci_sign=075db8dd6454da45c984464edd0295cef8bcf188 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
139+0.51 EUR
153+0.47 EUR
193+0.37 EUR
204+0.35 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
74LCX08BQX ONSEMI ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw FAIRS46346-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E73480D3&compId=MC74LCX08-D.pdf?ci_sign=5906c3f45e6d694965b3c26a3ee0013d4cd4e8b2 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DTG MC74LCX08DTG ONSEMI mc74lcx08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DTR2G MC74LCX08DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE04845292C20C7&compId=MC74LCX08DG.pdf?ci_sign=075db8dd6454da45c984464edd0295cef8bcf188 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5383BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5256BT1G MMSZ5256BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2862 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
625+0.11 EUR
1005+0.071 EUR
1244+0.057 EUR
1530+0.047 EUR
2075+0.034 EUR
2284+0.031 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SZMMSZ5256BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRTS1260PFST3G ONSEMI NRTS1260PFS-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 150A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUF75339P3 HUF75339P3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781982E4A55900259&compId=HUF75339P3.pdf?ci_sign=8161b736ca7bb5c1e2a30b89d8a66709ee36d770 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
44+1.66 EUR
48+1.52 EUR
49+1.47 EUR
52+1.4 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
FDMC7692 FDMC7692 ONSEMI fdmc7692-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
90+0.8 EUR
103+0.7 EUR
113+0.63 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
MC33161DR2G MC33161DR2G ONSEMI mc34161-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: reel; tape
Threshold on-voltage: 1.27V
DC supply current: 560µA
auf Bestellung 1333 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
76+0.95 EUR
81+0.89 EUR
84+0.86 EUR
87+0.82 EUR
89+0.81 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
MC33172DR2G MC33172DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2 Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2.1V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 1.8MHz
Input offset voltage: 2mV
auf Bestellung 2264 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
171+0.42 EUR
191+0.37 EUR
209+0.34 EUR
329+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
MC33179DR2G MC33179DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C935B535A469&compId=MC33179DG.PDF?ci_sign=3dad0277dcff65bfb0cbd2b58db980cbfa260939 Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Case: SO14
Number of channels: 4
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2V/μs
Voltage supply range: ± 2...18V DC; 4...36V DC
Bandwidth: 5MHz
Input offset voltage: 4mV
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
126+0.57 EUR
137+0.52 EUR
175+0.41 EUR
185+0.39 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
MC33164P-5G MC33164P-5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TO92
Supply voltage: 1...10V DC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: bulk
Threshold on-voltage: 4.33V
DC supply current: 32µA
auf Bestellung 1293 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
133+0.54 EUR
142+0.5 EUR
146+0.49 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
MC33161DG MC33161DG ONSEMI mc34161-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 1.27V
DC supply current: 560µA
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
67+1.07 EUR
80+0.9 EUR
87+0.83 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
MC34152DR2G MC34152DR2G ONSEMI mc34152-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMT80060DC ONSEMI fdmt80060dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 1825A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD8008MUTAG
+1
ESD8008MUTAG ONSEMI esd8008-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Number of channels: 8
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Case: uDFN14
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
98+0.73 EUR
169+0.42 EUR
179+0.4 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
FDB86102LZ FDB86102LZ ONSEMI ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 3.1W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB86135 ONSEMI fdb86135-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 176A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 704A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB86563-F085 ONSEMI fdb86563_f085-d.pdf FDB86563_F085-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14042BDR2G MC14042BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE7306E0D3&compId=MC14042B-D.pdf?ci_sign=0504a830335e29757e6b09a2f558bf5a9f6629be Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: latch
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSB50450AS ONSEMI fsb50450at-d.pdf Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Supply voltage: 300V
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Output current: 1.5A
auf Bestellung 21841 Stücke:
Lieferzeit 14-21 Tag (e)
450+7.28 EUR
Mindestbestellmenge: 450
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM ONSEMI FQB44N10-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMYS3D5N04CTWG ONSEMI ntmys3d5n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 102A
Pulsed drain current: 554A
Power dissipation: 34W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMYS4D5N04CTWG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 27W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 27W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS015N04CTAG ONSEMI nttfs015n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5240BLT1G MMBZ5240BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 3µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
528+0.14 EUR
848+0.084 EUR
1316+0.054 EUR
1480+0.049 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5240BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 3µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5240ELT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CA954426B840D8&compId=MMBZ52xxELT1G.PDF?ci_sign=91e02c7b41a1fa07b731edfcfcc16c94d04eaa73 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDS9945 NDS9945 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE9DF2CC3A4745&compId=NDS9945.pdf?ci_sign=81c8dfe4d6ac5d3b6459cc191f0f2bf8c07f8fa4 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8984 FDS8984 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE718E053844259&compId=FDS8984.pdf?ci_sign=1b0f59e76abca5ef03dcb0e3b1dfebba81112357 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS89161LZ FDS89161LZ ONSEMI fds89161lz-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8978 FDS8978 ONSEMI fds8978-d.pdf 2be1a87b7a2cbad3cc3c9425d69f8f68.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; Idm: 49A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 49A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD86250 FDD86250 ONSEMI fdd86250-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 164A
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
42+1.72 EUR
44+1.63 EUR
250+1.6 EUR
500+1.57 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
NTMFSC012N15MC ONSEMI ntmfsc012n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Mounting: SMD
Case: PQFN8
Drain-source voltage: 150V
Drain current: 80A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1067A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAS16LT1G SBAS16LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
554+0.13 EUR
676+0.11 EUR
758+0.094 EUR
1169+0.061 EUR
1263+0.057 EUR
Mindestbestellmenge: 554
Im Einkaufswagen  Stück im Wert von  UAH
BAS16LT3G BAS16LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAS16LT3G SBAS16LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQT1N80TF-WS FQT1N80TF-WS ONSEMI fqt1n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQU1N80TU ONSEMI fqu1n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.2nC
Power dissipation: 45W
Pulsed drain current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD13810STU BD13810STU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
auf Bestellung 1248 Stücke:
Lieferzeit 14-21 Tag (e)
151+0.48 EUR
167+0.43 EUR
191+0.38 EUR
202+0.35 EUR
480+0.34 EUR
Mindestbestellmenge: 151
Im Einkaufswagen  Stück im Wert von  UAH
CPH3216-TL-E CPH3216-TL-E ONSEMI en6405-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 0.9W; CPH3
Power dissipation: 0.9W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: CPH3
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 1A
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5241BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC6561AN FDC6561AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
93+0.78 EUR
211+0.34 EUR
223+0.32 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NDC7002N NDC7002N ONSEMI pVersion=0046&contRep=ZT&docId=E20E0CF99AC49DF1A303005056AB0C4F&compId=NDC7002N.pdf?ci_sign=700e2757c62f23933ea86ede021e99436a8a3766 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3274 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
197+0.36 EUR
217+0.33 EUR
274+0.26 EUR
302+0.24 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
FDC5614P FDC5614P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A48AEDAD788F0A50&compId=FDC5614P-DTE.pdf?ci_sign=15f5eeeaa1d3b2143fa6d597203868db13d69957 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4291 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
97+0.74 EUR
108+0.66 EUR
154+0.47 EUR
248+0.29 EUR
262+0.27 EUR
3000+0.26 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
FDC6318P FDC6318P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE1562AE24DE28&compId=FDC6318P.pdf?ci_sign=ae34da262379e255b90d211623f7773f26431455 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
auf Bestellung 2789 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
94+0.77 EUR
108+0.66 EUR
128+0.56 EUR
135+0.53 EUR
250+0.51 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
FDC6327C FDC6327C ONSEMI fdc6327c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
75+0.96 EUR
100+0.72 EUR
249+0.29 EUR
264+0.27 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
NDC7003P NDC7003P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE739DB2174745&compId=NDC7003P.pdf?ci_sign=5c421510fe44da4ad1d95dee73eb77a06ed2bf63 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
205+0.35 EUR
257+0.28 EUR
300+0.24 EUR
511+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
NDC7001C NDC7001C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE6FBA10696745&compId=NDC7001C.pdf?ci_sign=fafcc44f8fba68da3bbcbe355a6171b7c2c33ffa Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
153+0.47 EUR
197+0.36 EUR
271+0.26 EUR
286+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
FDC6321C FDC6321C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE180B16ED3E28&compId=FDC6321C.pdf?ci_sign=0983ccd23aa10f3fa785907e3ddb9524ecfa334b Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
111+0.64 EUR
126+0.57 EUR
197+0.36 EUR
209+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
FDC6333C FDC6333C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE20DC87FB3E28&compId=FDC6333C.pdf?ci_sign=d9aa1d00b0d0749eb8b25b38b8ba986528b35ddd Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
96+0.75 EUR
107+0.67 EUR
147+0.49 EUR
172+0.41 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
FDC658P FDC658P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE496FB62DBE28&compId=FDC658P.pdf?ci_sign=466ec4213f6486879e0e409ee8e782f401901967 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
76+0.94 EUR
85+0.85 EUR
154+0.46 EUR
163+0.44 EUR
1000+0.42 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
FDC658AP FDC658AP ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3FC6627355EA&compId=FDC658AP.pdf?ci_sign=67e40d1a9236ccbd26c1eaa38a3cf102e25ea8a0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
111+0.64 EUR
150+0.48 EUR
232+0.31 EUR
246+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
MUR420RLG description pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8FC5376C375260C8&compId=MUR4xx.PDF?ci_sign=5cda600c4686d43b011dfb5c9c7277475bc362fd
MUR420RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
auf Bestellung 1707 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
117+0.61 EUR
128+0.56 EUR
235+0.3 EUR
249+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
NCP51820AMNTWG ncp51820-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Voltage class: 650V
Output current: -2...1A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 9...17V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD7504MUTAG esd7504-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Kind of package: reel; tape
Case: uDFN10
Capacitance: 0.55pF
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Leakage current: 1µA
Number of channels: 4
Type of diode: TVS array
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR745G pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869992DAE32DC469&compId=MBR745G.PDF?ci_sign=417dd6d7629969a59a467548528a3a6416e48a10
MBR745G
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
72+1 EUR
91+0.79 EUR
106+0.67 EUR
113+0.64 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE04845292C20C7&compId=MC74LCX08DG.pdf?ci_sign=075db8dd6454da45c984464edd0295cef8bcf188
MC74LCX08DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
139+0.51 EUR
153+0.47 EUR
193+0.37 EUR
204+0.35 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
74LCX08BQX ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw FAIRS46346-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E73480D3&compId=MC74LCX08-D.pdf?ci_sign=5906c3f45e6d694965b3c26a3ee0013d4cd4e8b2
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DTG mc74lcx08-d.pdf
MC74LCX08DTG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LCX08DTR2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE04845292C20C7&compId=MC74LCX08DG.pdf?ci_sign=075db8dd6454da45c984464edd0295cef8bcf188
MC74LCX08DTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5383BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5256BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5256BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
625+0.11 EUR
1005+0.071 EUR
1244+0.057 EUR
1530+0.047 EUR
2075+0.034 EUR
2284+0.031 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SZMMSZ5256BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRTS1260PFST3G NRTS1260PFS-D.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 150A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUF75339P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED781982E4A55900259&compId=HUF75339P3.pdf?ci_sign=8161b736ca7bb5c1e2a30b89d8a66709ee36d770
HUF75339P3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
44+1.66 EUR
48+1.52 EUR
49+1.47 EUR
52+1.4 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
FDMC7692 fdmc7692-d.pdf
FDMC7692
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
90+0.8 EUR
103+0.7 EUR
113+0.63 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
MC33161DR2G mc34161-d.pdf
MC33161DR2G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: reel; tape
Threshold on-voltage: 1.27V
DC supply current: 560µA
auf Bestellung 1333 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
76+0.95 EUR
81+0.89 EUR
84+0.86 EUR
87+0.82 EUR
89+0.81 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
MC33172DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2
MC33172DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2.1V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 1.8MHz
Input offset voltage: 2mV
auf Bestellung 2264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
171+0.42 EUR
191+0.37 EUR
209+0.34 EUR
329+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
MC33179DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C935B535A469&compId=MC33179DG.PDF?ci_sign=3dad0277dcff65bfb0cbd2b58db980cbfa260939
MC33179DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Case: SO14
Number of channels: 4
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2V/μs
Voltage supply range: ± 2...18V DC; 4...36V DC
Bandwidth: 5MHz
Input offset voltage: 4mV
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
126+0.57 EUR
137+0.52 EUR
175+0.41 EUR
185+0.39 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
MC33164P-5G description pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab
MC33164P-5G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TO92
Supply voltage: 1...10V DC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: bulk
Threshold on-voltage: 4.33V
DC supply current: 32µA
auf Bestellung 1293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
133+0.54 EUR
142+0.5 EUR
146+0.49 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
MC33161DG mc34161-d.pdf
MC33161DG
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 1.27V
DC supply current: 560µA
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
67+1.07 EUR
80+0.9 EUR
87+0.83 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
MC34152DR2G mc34152-d.pdf
MC34152DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMT80060DC fdmt80060dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 1825A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD8008MUTAG esd8008-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Number of channels: 8
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Case: uDFN14
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
98+0.73 EUR
169+0.42 EUR
179+0.4 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
FDB86102LZ ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw
FDB86102LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 3.1W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB86135 fdb86135-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 176A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 704A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB86563-F085 fdb86563_f085-d.pdf FDB86563_F085-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14042BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE7306E0D3&compId=MC14042B-D.pdf?ci_sign=0504a830335e29757e6b09a2f558bf5a9f6629be
MC14042BDR2G
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: latch
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSB50450AS fsb50450at-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Supply voltage: 300V
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Output current: 1.5A
auf Bestellung 21841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
450+7.28 EUR
Mindestbestellmenge: 450
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM FQB44N10-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMYS3D5N04CTWG ntmys3d5n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 102A
Pulsed drain current: 554A
Power dissipation: 34W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMYS4D5N04CTWG
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 27W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 27W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS015N04CTAG nttfs015n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5240BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5240BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 3µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
528+0.14 EUR
848+0.084 EUR
1316+0.054 EUR
1480+0.049 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5240BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 3µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5240ELT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CA954426B840D8&compId=MMBZ52xxELT1G.PDF?ci_sign=91e02c7b41a1fa07b731edfcfcc16c94d04eaa73
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDS9945 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE9DF2CC3A4745&compId=NDS9945.pdf?ci_sign=81c8dfe4d6ac5d3b6459cc191f0f2bf8c07f8fa4
NDS9945
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8984 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE718E053844259&compId=FDS8984.pdf?ci_sign=1b0f59e76abca5ef03dcb0e3b1dfebba81112357
FDS8984
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS89161LZ fds89161lz-d.pdf
FDS89161LZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8978 fds8978-d.pdf 2be1a87b7a2cbad3cc3c9425d69f8f68.pdf
FDS8978
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; Idm: 49A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 49A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD86250 fdd86250-d.pdf
FDD86250
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 164A
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
42+1.72 EUR
44+1.63 EUR
250+1.6 EUR
500+1.57 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
NTMFSC012N15MC ntmfsc012n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Mounting: SMD
Case: PQFN8
Drain-source voltage: 150V
Drain current: 80A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1067A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAS16LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e
SBAS16LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
554+0.13 EUR
676+0.11 EUR
758+0.094 EUR
1169+0.061 EUR
1263+0.057 EUR
Mindestbestellmenge: 554
Im Einkaufswagen  Stück im Wert von  UAH
BAS16LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e
BAS16LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAS16LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e
SBAS16LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQT1N80TF-WS fqt1n80-d.pdf
FQT1N80TF-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQU1N80TU fqu1n80-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.2nC
Power dissipation: 45W
Pulsed drain current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD13810STU pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0
BD13810STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
auf Bestellung 1248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
151+0.48 EUR
167+0.43 EUR
191+0.38 EUR
202+0.35 EUR
480+0.34 EUR
Mindestbestellmenge: 151
Im Einkaufswagen  Stück im Wert von  UAH
CPH3216-TL-E en6405-d.pdf
CPH3216-TL-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 0.9W; CPH3
Power dissipation: 0.9W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: CPH3
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 1A
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5241BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC6561AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493
FDC6561AN
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
93+0.78 EUR
211+0.34 EUR
223+0.32 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NDC7002N pVersion=0046&contRep=ZT&docId=E20E0CF99AC49DF1A303005056AB0C4F&compId=NDC7002N.pdf?ci_sign=700e2757c62f23933ea86ede021e99436a8a3766
NDC7002N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
197+0.36 EUR
217+0.33 EUR
274+0.26 EUR
302+0.24 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
FDC5614P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A48AEDAD788F0A50&compId=FDC5614P-DTE.pdf?ci_sign=15f5eeeaa1d3b2143fa6d597203868db13d69957
FDC5614P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
97+0.74 EUR
108+0.66 EUR
154+0.47 EUR
248+0.29 EUR
262+0.27 EUR
3000+0.26 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
FDC6318P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE1562AE24DE28&compId=FDC6318P.pdf?ci_sign=ae34da262379e255b90d211623f7773f26431455
FDC6318P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
auf Bestellung 2789 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
94+0.77 EUR
108+0.66 EUR
128+0.56 EUR
135+0.53 EUR
250+0.51 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
FDC6327C fdc6327c-d.pdf
FDC6327C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
75+0.96 EUR
100+0.72 EUR
249+0.29 EUR
264+0.27 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
NDC7003P pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE739DB2174745&compId=NDC7003P.pdf?ci_sign=5c421510fe44da4ad1d95dee73eb77a06ed2bf63
NDC7003P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
205+0.35 EUR
257+0.28 EUR
300+0.24 EUR
511+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
NDC7001C pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE6FBA10696745&compId=NDC7001C.pdf?ci_sign=fafcc44f8fba68da3bbcbe355a6171b7c2c33ffa
NDC7001C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
153+0.47 EUR
197+0.36 EUR
271+0.26 EUR
286+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
FDC6321C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE180B16ED3E28&compId=FDC6321C.pdf?ci_sign=0983ccd23aa10f3fa785907e3ddb9524ecfa334b
FDC6321C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
111+0.64 EUR
126+0.57 EUR
197+0.36 EUR
209+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
FDC6333C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE20DC87FB3E28&compId=FDC6333C.pdf?ci_sign=d9aa1d00b0d0749eb8b25b38b8ba986528b35ddd
FDC6333C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
96+0.75 EUR
107+0.67 EUR
147+0.49 EUR
172+0.41 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
FDC658P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE496FB62DBE28&compId=FDC658P.pdf?ci_sign=466ec4213f6486879e0e409ee8e782f401901967
FDC658P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
76+0.94 EUR
85+0.85 EUR
154+0.46 EUR
163+0.44 EUR
1000+0.42 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
FDC658AP pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3FC6627355EA&compId=FDC658AP.pdf?ci_sign=67e40d1a9236ccbd26c1eaa38a3cf102e25ea8a0
FDC658AP
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
111+0.64 EUR
150+0.48 EUR
232+0.31 EUR
246+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:    << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2442 2443 2444 2445 2446 2447 2448 2449 2450 2451 2452 2470 2477  Nächste Seite >> ]