Foto | Bezeichnung | Hersteller | Beschreibung |
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MOC3022SM | ONSEMI |
![]() ![]() Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Manufacturer series: MOC302XM Kind of output: triac Trigger current: 10mA Number of channels: 1 Max. off-state voltage: 3V Output voltage: 400V Insulation voltage: 4.17kV Case: SMT6 Type of optocoupler: optotriac Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MOC3022SR2VM | ONSEMI |
![]() ![]() Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDA38N30 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 22A Pulsed drain current: 150A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 85mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCPF220N80 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 23A Pulsed drain current: 57A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVMFS6H836NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Pulsed drain current: 432A Power dissipation: 44W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVMFS6H836NWFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Pulsed drain current: 432A Power dissipation: 44W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FQD8P10TM-F085 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Pulsed drain current: -26.4A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FGH40N60SMDF | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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LM385BZ-1.2RAG | ONSEMI |
![]() Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA Reference voltage: 1.235V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5113DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of transistor: BRT Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Current gain: 140 Base-emitter resistor: 47kΩ Base resistor: 47kΩ Polarisation: bipolar |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVS50031SB3T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.1W; CPH3; automotive industry Polarisation: bipolar Case: CPH3 Mounting: SMD Type of transistor: NPN Power dissipation: 1.1W Collector current: 3A Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 360MHz Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BAS21TMR6T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SC74 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FAN7601BMX | ONSEMI |
![]() Description: IC: PMIC; reel,tape Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMSZ5228BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode Case: SOD123 Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Tolerance: ±5% Manufacturer series: MMSZ52xxB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BDX53BG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FOD8523S | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4 CTR@If: 1000-15000%@1mA Insulation voltage: 5kV Kind of output: Darlington Case: Gull wing 4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 |
auf Bestellung 2149 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD8523SD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4 CTR@If: 1000-15000%@1mA Insulation voltage: 5kV Kind of output: Darlington Case: Gull wing 4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 |
auf Bestellung 1274 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD852SD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4 CTR@If: 1000-15000%@1mA Insulation voltage: 5kV Kind of output: Darlington Case: Gull wing 4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD852 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4 CTR@If: 1000-15000%@1mA Insulation voltage: 5kV Kind of output: Darlington Case: DIP4 Type of optocoupler: optocoupler Mounting: THT Turn-off time: 20µs Turn-on time: 0.1ms Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD852S | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4 CTR@If: 1000-15000%@1mA Insulation voltage: 5kV Kind of output: Darlington Case: Gull wing 4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FOD852300 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4 Collector-emitter voltage: 300V CTR@If: 1000-15000%@1mA Insulation voltage: 5kV Kind of output: Darlington Case: DIP4 Manufacturer series: FOD852 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Max. off-state voltage: 6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MOC3072SR2VM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3072M Conform to the norm: VDE Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MOC3072SVM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3072M Conform to the norm: VDE Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MOC3072TVM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3072M Conform to the norm: VDE Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MOC3073SR2M | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3073M Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MOC3073SR2VM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3073M Conform to the norm: VDE Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MOC3073SVM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3073M Conform to the norm: VDE Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TIP110 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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NC7SZ373P6X | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 1 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: 7SZ Trigger: level-triggered |
auf Bestellung 2617 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCX573DTG | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Manufacturer series: LCX Technology: CMOS Trigger: level-triggered |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV34074VDR2G | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO14 Slew rate: 13V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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H11AA4SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: PDIP6 Collector-emitter voltage: 100V CTR@If: 100%@10mA Manufacturer series: H11AA |
auf Bestellung 979 Stücke: Lieferzeit 14-21 Tag (e) |
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H11AA4M | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 CTR@If: 100%@10mA |
Produkt ist nicht verfügbar |
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NCP1606BDR2G | ONSEMI |
![]() Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
Produkt ist nicht verfügbar |
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2V7002KT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MURB1620CTT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 0.895V Max. load current: 16A Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C05NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 78A; Idm: 174A; 33W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 78A Pulsed drain current: 174A Power dissipation: 33W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTTFS4C05NTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 174A; 33W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 174A Power dissipation: 33W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVMFS4C05NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 127A; Idm: 174A; 79W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 127A Pulsed drain current: 174A Power dissipation: 79W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVMFS4C05NWFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 127A; Idm: 174A; 79W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 127A Pulsed drain current: 174A Power dissipation: 79W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVTFS4C05NTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 433A Power dissipation: 34W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVTFS4C05NWFTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 433A Power dissipation: 34W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTTFS4C10NTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 44A; Idm: 128A; 23.6W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 44A Pulsed drain current: 128A Power dissipation: 23.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 18.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTMFS4C10NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 340A Power dissipation: 23.6W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 6.95mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVTFS4C10NWFTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 47A; Idm: 196A; 14W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 47A Pulsed drain current: 196A Power dissipation: 14W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 19.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FSA266K8X | ONSEMI |
![]() Description: IC: analog switch; 2bit,bus switch; MO187,US8; 1.65÷5.5VDC; 10uA Kind of package: reel; tape Kind of output: SPST-NO x2 Operating temperature: -40...85°C Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Kind of integrated circuit: 2bit; bus switch Type of integrated circuit: analog switch Technology: CMOS Case: MO187; US8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FSA266L8X | ONSEMI |
![]() Description: IC: analog switch; 2bit,bus switch; MicroPak10; 1.65÷5.5VDC; 10uA Kind of package: reel; tape Kind of output: SPST-NO x2 Operating temperature: -40...85°C Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Kind of integrated circuit: 2bit; bus switch Type of integrated circuit: analog switch Technology: CMOS Case: MicroPak10 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NC7WB66K8X | ONSEMI |
![]() Description: IC: analog switch; 2bit,bus switch; MO187,US8; 1.65÷5.5VDC; 10uA Kind of package: reel; tape Kind of output: SPST-NO Operating temperature: -40...85°C Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Kind of integrated circuit: 2bit; bus switch Type of integrated circuit: analog switch Technology: CMOS Case: MO187; US8 Mounting: SMD |
Produkt ist nicht verfügbar |
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NC7WB66L8X | ONSEMI |
![]() Description: IC: analog switch; 2bit,bus switch; MicroPak8; 1.65÷5.5VDC; 10uA Kind of package: reel; tape Kind of output: SPST-NO x2 Operating temperature: -40...85°C Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Kind of integrated circuit: 2bit; bus switch Type of integrated circuit: analog switch Technology: CMOS Case: MicroPak8 Mounting: SMD |
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7WBD3306USG | ONSEMI |
![]() Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: 4...5.5V DC Kind of integrated circuit: bus switch; translator Type of integrated circuit: digital Technology: TTL Case: US8 Mounting: SMD |
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7SB385DFT2G | ONSEMI |
![]() Description: IC: digital; bus switch; SMD; SC88A; 4.5÷5.5VDC; -55÷125°C Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of integrated circuit: bus switch Type of integrated circuit: digital Case: SC88A Mounting: SMD |
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7WB383MUTAG | ONSEMI |
![]() Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: 4...5.5V DC Kind of integrated circuit: bus switch; translator Type of integrated circuit: digital Technology: TTL Case: uDFN8 Mounting: SMD |
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7WBD383MUTAG | ONSEMI |
![]() Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: 4...5.5V DC Kind of integrated circuit: bus switch; translator Type of integrated circuit: digital Technology: TTL Case: uDFN8 Mounting: SMD |
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7WBD383USG | ONSEMI |
![]() Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 1µA Supply voltage: 4...5.5V DC Kind of integrated circuit: bus switch; translator Type of integrated circuit: digital Technology: TTL Case: US8 Mounting: SMD |
Produkt ist nicht verfügbar |
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MMBZ6V2ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; SOT23 Type of diode: TVS array Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Version: ESD Leakage current: 0.5µA Max. forward impulse current: 2.76A Max. off-state voltage: 3V Breakdown voltage: 6.2V Peak pulse power dissipation: 24W |
auf Bestellung 1140 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5257BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: MMBZ52xxBLT1G |
auf Bestellung 35623 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5231BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA Case: SOT23 Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Leakage current: 5µA Tolerance: ±5% Power dissipation: 0.3W Zener voltage: 5.1V Kind of package: reel; tape Manufacturer series: MMBZ52xxBLT1G |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5256BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: MMBZ52xxBLT1G |
auf Bestellung 5771 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5243BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode; 0.5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: MMBZ52xxBLT1G |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3022SM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Manufacturer series: MOC302XM
Kind of output: triac
Trigger current: 10mA
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 4.17kV
Case: SMT6
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Manufacturer series: MOC302XM
Kind of output: triac
Trigger current: 10mA
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 4.17kV
Case: SMT6
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
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MOC3022SR2VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
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FDA38N30 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF220N80 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 23A
Pulsed drain current: 57A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 23A
Pulsed drain current: 57A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS6H836NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS6H836NWFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQD8P10TM-F085 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
FGH40N60SMDF |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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LM385BZ-1.2RAG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Produkt ist nicht verfügbar
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SMUN5113DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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264+ | 0.27 EUR |
313+ | 0.23 EUR |
491+ | 0.15 EUR |
627+ | 0.11 EUR |
957+ | 0.075 EUR |
1238+ | 0.058 EUR |
1309+ | 0.055 EUR |
MUN5213DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Polarisation: bipolar
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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264+ | 0.27 EUR |
385+ | 0.19 EUR |
590+ | 0.12 EUR |
NSVS50031SB3T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.1W; CPH3; automotive industry
Polarisation: bipolar
Case: CPH3
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Application: automotive industry
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.1W; CPH3; automotive industry
Polarisation: bipolar
Case: CPH3
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS21TMR6T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
FAN7601BMX |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; reel,tape
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; reel,tape
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5228BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Tolerance: ±5%
Manufacturer series: MMSZ52xxB
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Tolerance: ±5%
Manufacturer series: MMSZ52xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BDX53BG |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD8523S |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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99+ | 0.73 EUR |
140+ | 0.51 EUR |
146+ | 0.49 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
FOD8523SD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
auf Bestellung 1274 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.53 EUR |
77+ | 0.93 EUR |
96+ | 0.75 EUR |
100+ | 0.72 EUR |
101+ | 0.71 EUR |
105+ | 0.68 EUR |
FOD852SD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD852 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Type of optocoupler: optocoupler
Mounting: THT
Turn-off time: 20µs
Turn-on time: 0.1ms
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Type of optocoupler: optocoupler
Mounting: THT
Turn-off time: 20µs
Turn-on time: 0.1ms
Number of channels: 1
Produkt ist nicht verfügbar
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FOD852S |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 4
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Produkt ist nicht verfügbar
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FOD852300 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Manufacturer series: FOD852
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Manufacturer series: FOD852
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Produkt ist nicht verfügbar
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MOC3072SR2VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MOC3072SVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
Produkt ist nicht verfügbar
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MOC3072TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
Produkt ist nicht verfügbar
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MOC3073SR2M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MOC3073SR2VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MOC3073SVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: tube
Produkt ist nicht verfügbar
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TIP110 |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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NC7SZ373P6X |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: 7SZ
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: 7SZ
Trigger: level-triggered
auf Bestellung 2617 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
261+ | 0.27 EUR |
317+ | 0.23 EUR |
417+ | 0.17 EUR |
610+ | 0.12 EUR |
685+ | 0.1 EUR |
758+ | 0.094 EUR |
MC74LCX573DTG |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Manufacturer series: LCX
Technology: CMOS
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Manufacturer series: LCX
Technology: CMOS
Trigger: level-triggered
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
NCV34074VDR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Produkt ist nicht verfügbar
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H11AA4SR2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Manufacturer series: H11AA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Manufacturer series: H11AA
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
101+ | 0.71 EUR |
119+ | 0.6 EUR |
131+ | 0.55 EUR |
H11AA4M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 100%@10mA
Produkt ist nicht verfügbar
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NCP1606BDR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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2V7002KT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
363+ | 0.2 EUR |
424+ | 0.17 EUR |
793+ | 0.09 EUR |
1244+ | 0.057 EUR |
1316+ | 0.054 EUR |
3000+ | 0.052 EUR |
MURB1620CTT4G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
45+ | 1.59 EUR |
NTMFS4C05NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 78A; Idm: 174A; 33W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 78A
Pulsed drain current: 174A
Power dissipation: 33W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 78A; Idm: 174A; 33W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 78A
Pulsed drain current: 174A
Power dissipation: 33W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS4C05NTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 174A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 174A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 174A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 174A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS4C05NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; Idm: 174A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
Pulsed drain current: 174A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; Idm: 174A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
Pulsed drain current: 174A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS4C05NWFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; Idm: 174A; 79W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
Pulsed drain current: 174A
Power dissipation: 79W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; Idm: 174A; 79W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
Pulsed drain current: 174A
Power dissipation: 79W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVTFS4C05NTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVTFS4C05NWFTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTTFS4C10NTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 44A; Idm: 128A; 23.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 44A
Pulsed drain current: 128A
Power dissipation: 23.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 44A; Idm: 128A; 23.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 44A
Pulsed drain current: 128A
Power dissipation: 23.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS4C10NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C10NWFTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; Idm: 196A; 14W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 196A
Power dissipation: 14W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 19.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; Idm: 196A; 14W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 196A
Power dissipation: 14W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 19.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSA266K8X |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MO187,US8; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO x2
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MO187; US8
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MO187,US8; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO x2
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MO187; US8
Mounting: SMD
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FSA266L8X |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MicroPak10; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO x2
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MicroPak10
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MicroPak10; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO x2
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MicroPak10
Mounting: SMD
Produkt ist nicht verfügbar
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NC7WB66K8X |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MO187,US8; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MO187; US8
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MO187,US8; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MO187; US8
Mounting: SMD
Produkt ist nicht verfügbar
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NC7WB66L8X |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MicroPak8; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO x2
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MicroPak8
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; 2bit,bus switch; MicroPak8; 1.65÷5.5VDC; 10uA
Kind of package: reel; tape
Kind of output: SPST-NO x2
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 2bit; bus switch
Type of integrated circuit: analog switch
Technology: CMOS
Case: MicroPak8
Mounting: SMD
Produkt ist nicht verfügbar
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7WBD3306USG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: US8
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: US8
Mounting: SMD
Produkt ist nicht verfügbar
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7SB385DFT2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch; SMD; SC88A; 4.5÷5.5VDC; -55÷125°C
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: bus switch
Type of integrated circuit: digital
Case: SC88A
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch; SMD; SC88A; 4.5÷5.5VDC; -55÷125°C
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: bus switch
Type of integrated circuit: digital
Case: SC88A
Mounting: SMD
Produkt ist nicht verfügbar
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7WB383MUTAG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: uDFN8
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: uDFN8
Mounting: SMD
Produkt ist nicht verfügbar
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7WBD383MUTAG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: uDFN8
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: uDFN8
Mounting: SMD
Produkt ist nicht verfügbar
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7WBD383USG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 1µA
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: US8
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 1µA
Supply voltage: 4...5.5V DC
Kind of integrated circuit: bus switch; translator
Type of integrated circuit: digital
Technology: TTL
Case: US8
Mounting: SMD
Produkt ist nicht verfügbar
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MMBZ6V2ALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; SOT23
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Version: ESD
Leakage current: 0.5µA
Max. forward impulse current: 2.76A
Max. off-state voltage: 3V
Breakdown voltage: 6.2V
Peak pulse power dissipation: 24W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; SOT23
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Version: ESD
Leakage current: 0.5µA
Max. forward impulse current: 2.76A
Max. off-state voltage: 3V
Breakdown voltage: 6.2V
Peak pulse power dissipation: 24W
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
596+ | 0.12 EUR |
758+ | 0.094 EUR |
1140+ | 0.063 EUR |
MMBZ5257BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 35623 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
715+ | 0.1 EUR |
1112+ | 0.064 EUR |
1553+ | 0.046 EUR |
1799+ | 0.04 EUR |
2591+ | 0.028 EUR |
2858+ | 0.025 EUR |
MMBZ5231BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Case: SOT23
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Case: SOT23
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
758+ | 0.094 EUR |
770+ | 0.093 EUR |
MMBZ5256BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 5771 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
981+ | 0.073 EUR |
2233+ | 0.032 EUR |
3356+ | 0.021 EUR |
MMBZ5243BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
1471+ | 0.049 EUR |
1799+ | 0.04 EUR |
2101+ | 0.034 EUR |
2990+ | 0.024 EUR |