Foto | Bezeichnung | Hersteller | Beschreibung |
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MUR420RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns |
auf Bestellung 1707 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP51820AMNTWG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Technology: GaN Case: QFN15 Mounting: SMD Voltage class: 650V Output current: -2...1A Type of integrated circuit: driver Operating temperature: -40...125°C Kind of integrated circuit: gate driver; high-side; low-side Supply voltage: 9...17V DC |
Produkt ist nicht verfügbar |
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ESD7504MUTAG | ONSEMI |
![]() Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD Kind of package: reel; tape Case: uDFN10 Capacitance: 0.55pF Max. off-state voltage: 3.3V Breakdown voltage: 5V Leakage current: 1µA Number of channels: 4 Type of diode: TVS array Version: ESD Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBR745G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. load current: 7.5A Max. forward voltage: 0.57V Max. forward impulse current: 150A |
auf Bestellung 272 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCX08DG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX |
auf Bestellung 538 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX08BQX | ONSEMI |
![]() ![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: QFN14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MC74LCX08DR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Integrated circuit features: tolerates a voltage of 5V on the inputs Manufacturer series: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74LCX08DTG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74LCX08DTR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; LCX Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
1N5383BRLG | ONSEMI |
![]() Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 150V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Kind of package: reel; tape Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMSZ5256BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 2862 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ5256BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NRTS1260PFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; TO277; SMD; 60V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 60V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.64V Max. forward impulse current: 150A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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HUF75339P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Technology: UltraFET® Polarisation: unipolar Gate charge: 130nC On-state resistance: 12mΩ Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 75A Power dissipation: 200W Case: TO220AB Kind of channel: enhancement |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC7692 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 40A Power dissipation: 29W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33161DR2G | ONSEMI |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Case: SO8 Supply voltage: 2...40V DC Mounting: SMD Operating temperature: -40...105°C Maximum output current: 20mA Active logical level: low Kind of RESET output: open collector Kind of package: reel; tape Threshold on-voltage: 1.27V DC supply current: 560µA |
auf Bestellung 1333 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33172DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Case: SO8 Number of channels: 2 Mounting: SMT Operating temperature: -40...85°C Kind of package: reel; tape Slew rate: 2.1V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 1.8MHz Input offset voltage: 2mV |
auf Bestellung 2264 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33179DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC Type of integrated circuit: operational amplifier Case: SO14 Number of channels: 4 Mounting: SMT Operating temperature: -40...85°C Kind of package: reel; tape Slew rate: 2V/μs Voltage supply range: ± 2...18V DC; 4...36V DC Bandwidth: 5MHz Input offset voltage: 4mV |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33164P-5G | ONSEMI |
![]() ![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Case: TO92 Supply voltage: 1...10V DC Mounting: SMD Operating temperature: -40...125°C Maximum output current: 50mA Active logical level: low Kind of RESET output: open collector Kind of package: bulk Threshold on-voltage: 4.33V DC supply current: 32µA |
auf Bestellung 1293 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33161DG | ONSEMI |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Case: SO8 Supply voltage: 2...40V DC Mounting: SMD Operating temperature: -40...105°C Maximum output current: 20mA Active logical level: low Kind of RESET output: open collector Kind of package: tube Threshold on-voltage: 1.27V DC supply current: 560µA |
auf Bestellung 332 Stücke: Lieferzeit 14-21 Tag (e) |
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MC34152DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FDMT80060DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 184A Pulsed drain current: 1825A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 238nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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ESD8008MUTAG | ONSEMI |
![]() Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD Kind of package: reel; tape Version: ESD Mounting: SMD Type of diode: TVS array Number of channels: 8 Max. off-state voltage: 3.3V Breakdown voltage: 5.5...8.5V Case: uDFN14 |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB86102LZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 3.1W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Technology: UniFET™ Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FDB86135 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 176A Power dissipation: 227W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 704A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDB86563-F085 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC14042BDR2G | ONSEMI |
![]() Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C Type of integrated circuit: digital Operating temperature: -55...125°C Case: SOIC16 Supply voltage: 3...18V DC Number of channels: 4 Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: latch Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FSB50450AS | ONSEMI |
![]() Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V Supply voltage: 300V Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...150°C Output current: 1.5A |
auf Bestellung 21841 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB44N10TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30.8A Power dissipation: 146W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTMYS3D5N04CTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 102A Pulsed drain current: 554A Power dissipation: 34W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTMYS4D5N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 27W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 400A Power dissipation: 27W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTTFS015N04CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBZ5240BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA Semiconductor structure: single diode Zener voltage: 10V Leakage current: 3µA Power dissipation: 0.3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMBZ52xxBLT1G Mounting: SMD Case: SOT23 Tolerance: ±5% |
auf Bestellung 1480 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ5240BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Application: automotive industry Leakage current: 3µA |
Produkt ist nicht verfügbar |
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SZMMBZ5240ELT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxELT1G Application: automotive industry |
Produkt ist nicht verfügbar |
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NDS9945 | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDS8984 | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDS89161LZ | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar On-state resistance: 182mΩ Drain current: 2.7A Gate-source voltage: ±20V Power dissipation: 31W Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDS8978 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; Idm: 49A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 49A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDD86250 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 132W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 164A |
auf Bestellung 2407 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFSC012N15MC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8 Mounting: SMD Case: PQFN8 Drain-source voltage: 150V Drain current: 80A On-state resistance: 11.4mΩ Type of transistor: N-MOSFET Power dissipation: 58W Polarisation: unipolar Kind of package: reel; tape Gate charge: 32.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1067A |
Produkt ist nicht verfügbar |
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SBAS16LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1819 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SBAS16LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FQT1N80TF-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.12A Case: SOT223 Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 2.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FQU1N80TU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 7.2nC Power dissipation: 45W Pulsed drain current: 4A |
Produkt ist nicht verfügbar |
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BD13810STU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 63...160 Mounting: THT Kind of package: tube |
auf Bestellung 1248 Stücke: Lieferzeit 14-21 Tag (e) |
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CPH3216-TL-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 1A; 0.9W; CPH3 Power dissipation: 0.9W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: CPH3 Frequency: 420MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 1A Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SZMMBZ5241BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: MMBZ52xxBLT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDC6561AN | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 3.2nC On-state resistance: 152mΩ Power dissipation: 0.96W Drain current: 2.5A Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 867 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7002N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.51A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3274 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC5614P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 4291 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6318P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.5A Gate charge: 8nC On-state resistance: 0.2Ω Power dissipation: 0.96W Gate-source voltage: ±8V |
auf Bestellung 2789 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6327C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 2.7/-1.9A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.13/0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 1732 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7003P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Gate charge: 2.2nC Power dissipation: 0.96W On-state resistance: 10Ω Gate-source voltage: ±20V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7001C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.51/-0.34A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 4/10Ω Mounting: SMD Gate charge: 1.5/2.2nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 1259 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6321C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 0.68/-0.46A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 720/1220mΩ Mounting: SMD Gate charge: 2.3/1.5nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 1433 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6333C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.5/-2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±16/±25V On-state resistance: 150/220mΩ Mounting: SMD Gate charge: 6.6/5.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC658P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2759 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC658AP | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Gate charge: 8.1nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 3291 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR420RLG | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
auf Bestellung 1707 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
117+ | 0.61 EUR |
128+ | 0.56 EUR |
235+ | 0.3 EUR |
249+ | 0.29 EUR |
1000+ | 0.28 EUR |
NCP51820AMNTWG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Voltage class: 650V
Output current: -2...1A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 9...17V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Voltage class: 650V
Output current: -2...1A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 9...17V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ESD7504MUTAG |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Kind of package: reel; tape
Case: uDFN10
Capacitance: 0.55pF
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Leakage current: 1µA
Number of channels: 4
Type of diode: TVS array
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Kind of package: reel; tape
Case: uDFN10
Capacitance: 0.55pF
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Leakage current: 1µA
Number of channels: 4
Type of diode: TVS array
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR745G |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
72+ | 1 EUR |
91+ | 0.79 EUR |
106+ | 0.67 EUR |
113+ | 0.64 EUR |
MC74LCX08DG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
139+ | 0.51 EUR |
153+ | 0.47 EUR |
193+ | 0.37 EUR |
204+ | 0.35 EUR |
74LCX08BQX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LCX08DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LCX08DTG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LCX08DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5383BRLG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5256BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2862 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
625+ | 0.11 EUR |
1005+ | 0.071 EUR |
1244+ | 0.057 EUR |
1530+ | 0.047 EUR |
2075+ | 0.034 EUR |
2284+ | 0.031 EUR |
SZMMSZ5256BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRTS1260PFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 150A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HUF75339P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
44+ | 1.66 EUR |
48+ | 1.52 EUR |
49+ | 1.47 EUR |
52+ | 1.4 EUR |
FDMC7692 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
90+ | 0.8 EUR |
103+ | 0.7 EUR |
113+ | 0.63 EUR |
MC33161DR2G |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: reel; tape
Threshold on-voltage: 1.27V
DC supply current: 560µA
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: reel; tape
Threshold on-voltage: 1.27V
DC supply current: 560µA
auf Bestellung 1333 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
76+ | 0.95 EUR |
81+ | 0.89 EUR |
84+ | 0.86 EUR |
87+ | 0.82 EUR |
89+ | 0.81 EUR |
MC33172DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2.1V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 1.8MHz
Input offset voltage: 2mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2.1V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 1.8MHz
Input offset voltage: 2mV
auf Bestellung 2264 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
171+ | 0.42 EUR |
191+ | 0.37 EUR |
209+ | 0.34 EUR |
329+ | 0.22 EUR |
348+ | 0.21 EUR |
MC33179DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Case: SO14
Number of channels: 4
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2V/μs
Voltage supply range: ± 2...18V DC; 4...36V DC
Bandwidth: 5MHz
Input offset voltage: 4mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Case: SO14
Number of channels: 4
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Slew rate: 2V/μs
Voltage supply range: ± 2...18V DC; 4...36V DC
Bandwidth: 5MHz
Input offset voltage: 4mV
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
126+ | 0.57 EUR |
137+ | 0.52 EUR |
175+ | 0.41 EUR |
185+ | 0.39 EUR |
MC33164P-5G | ![]() |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TO92
Supply voltage: 1...10V DC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: bulk
Threshold on-voltage: 4.33V
DC supply current: 32µA
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TO92
Supply voltage: 1...10V DC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: bulk
Threshold on-voltage: 4.33V
DC supply current: 32µA
auf Bestellung 1293 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
133+ | 0.54 EUR |
142+ | 0.5 EUR |
146+ | 0.49 EUR |
MC33161DG |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 1.27V
DC supply current: 560µA
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: SO8
Supply voltage: 2...40V DC
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 1.27V
DC supply current: 560µA
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
67+ | 1.07 EUR |
80+ | 0.9 EUR |
87+ | 0.83 EUR |
MC34152DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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FDMT80060DC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 1825A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 1825A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD8008MUTAG |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Number of channels: 8
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Case: uDFN14
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Number of channels: 8
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Case: uDFN14
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
98+ | 0.73 EUR |
169+ | 0.42 EUR |
179+ | 0.4 EUR |
FDB86102LZ |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 3.1W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 3.1W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDB86135 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 176A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 704A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 176A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 704A
Produkt ist nicht verfügbar
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FDB86563-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC14042BDR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: latch
Mounting: SMD
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: latch
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSB50450AS |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Supply voltage: 300V
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Output current: 1.5A
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Supply voltage: 300V
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Output current: 1.5A
auf Bestellung 21841 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
450+ | 7.28 EUR |
FQB44N10TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMYS3D5N04CTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 102A
Pulsed drain current: 554A
Power dissipation: 34W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 102A
Pulsed drain current: 554A
Power dissipation: 34W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMYS4D5N04CTWG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 27W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 27W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 27W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 27W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTTFS015N04CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMBZ5240BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 3µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 3µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
528+ | 0.14 EUR |
848+ | 0.084 EUR |
1316+ | 0.054 EUR |
1480+ | 0.049 EUR |
SZMMBZ5240BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 3µA
Produkt ist nicht verfügbar
Im Einkaufswagen
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SZMMBZ5240ELT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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NDS9945 |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDS8984 |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDS89161LZ |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 182mΩ
Drain current: 2.7A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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FDS8978 |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; Idm: 49A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 49A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; Idm: 49A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 49A
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDD86250 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 164A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 164A
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.16 EUR |
42+ | 1.72 EUR |
44+ | 1.63 EUR |
250+ | 1.6 EUR |
500+ | 1.57 EUR |
NTMFSC012N15MC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Mounting: SMD
Case: PQFN8
Drain-source voltage: 150V
Drain current: 80A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1067A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Mounting: SMD
Case: PQFN8
Drain-source voltage: 150V
Drain current: 80A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1067A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBAS16LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
554+ | 0.13 EUR |
676+ | 0.11 EUR |
758+ | 0.094 EUR |
1169+ | 0.061 EUR |
1263+ | 0.057 EUR |
BAS16LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBAS16LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQT1N80TF-WS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQU1N80TU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.2nC
Power dissipation: 45W
Pulsed drain current: 4A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.2nC
Power dissipation: 45W
Pulsed drain current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD13810STU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
auf Bestellung 1248 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
151+ | 0.48 EUR |
167+ | 0.43 EUR |
191+ | 0.38 EUR |
202+ | 0.35 EUR |
480+ | 0.34 EUR |
CPH3216-TL-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 0.9W; CPH3
Power dissipation: 0.9W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: CPH3
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 0.9W; CPH3
Power dissipation: 0.9W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: CPH3
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 1A
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZMMBZ5241BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDC6561AN |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
93+ | 0.78 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
NDC7002N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3274 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
197+ | 0.36 EUR |
217+ | 0.33 EUR |
274+ | 0.26 EUR |
302+ | 0.24 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
FDC5614P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4291 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
97+ | 0.74 EUR |
108+ | 0.66 EUR |
154+ | 0.47 EUR |
248+ | 0.29 EUR |
262+ | 0.27 EUR |
3000+ | 0.26 EUR |
FDC6318P |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
auf Bestellung 2789 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
94+ | 0.77 EUR |
108+ | 0.66 EUR |
128+ | 0.56 EUR |
135+ | 0.53 EUR |
250+ | 0.51 EUR |
FDC6327C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
75+ | 0.96 EUR |
100+ | 0.72 EUR |
249+ | 0.29 EUR |
264+ | 0.27 EUR |
NDC7003P |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
205+ | 0.35 EUR |
257+ | 0.28 EUR |
300+ | 0.24 EUR |
511+ | 0.14 EUR |
544+ | 0.13 EUR |
NDC7001C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
153+ | 0.47 EUR |
197+ | 0.36 EUR |
271+ | 0.26 EUR |
286+ | 0.25 EUR |
1000+ | 0.24 EUR |
FDC6321C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
111+ | 0.64 EUR |
126+ | 0.57 EUR |
197+ | 0.36 EUR |
209+ | 0.34 EUR |
500+ | 0.33 EUR |
FDC6333C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
96+ | 0.75 EUR |
107+ | 0.67 EUR |
147+ | 0.49 EUR |
172+ | 0.41 EUR |
FDC658P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
76+ | 0.94 EUR |
85+ | 0.85 EUR |
154+ | 0.46 EUR |
163+ | 0.44 EUR |
1000+ | 0.42 EUR |
FDC658AP |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
111+ | 0.64 EUR |
150+ | 0.48 EUR |
232+ | 0.31 EUR |
246+ | 0.29 EUR |
1000+ | 0.28 EUR |