Technische Details NTTFS4C10NTAG ON Semiconductor
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 790mW (Ta), 23.6W (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.
Weitere Produktangebote NTTFS4C10NTAG nach Preis ab 0.29 EUR bis 2.15 EUR
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NTTFS4C10NTAG | ON Semiconductor |
 Trans MOSFET N-CH 30V 13.3A 8-Pin WDFN EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTTFS4C10NTAG | onsemi |
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) |
auf Bestellung 897 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4C10NTAG | onsemi |
MOSFETs NFET U8FL 30V 44A 7.4MOHM |
auf Bestellung 3168 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS4C10NTAG |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13.3A 8-Pin WDFN EP T/R
Trans MOSFET N-CH 30V 13.3A 8-Pin WDFN EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2317+ | 0.29 EUR |
| NTTFS4C10NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 27+ | 0.8 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| NTTFS4C10NTAG |
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Hersteller: onsemi
MOSFETs NFET U8FL 30V 44A 7.4MOHM
MOSFETs NFET U8FL 30V 44A 7.4MOHM
auf Bestellung 3168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.5 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.43 EUR |
| 1500+ | 0.38 EUR |
| 3000+ | 0.33 EUR |