Foto | Bezeichnung | Hersteller | Beschreibung |
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NCV8535MN500R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Output current: 0.5A Number of channels: 1 Output voltage: 5V Application: automotive industry Type of integrated circuit: voltage regulator Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FMB2222A | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.7W Case: TSOT23-6 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVMFS016N10MCLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVMFWS016N10MCLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVMYS016N10MCLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 264A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDB024N08BL7 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 162A Pulsed drain current: 916A Power dissipation: 246W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
GRUMMUN2216LT1G | ONSEMI |
Category: Unclassified Description: GRUMMUN2216LT1G |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSI45020JZT1G | ONSEMI |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5930BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1169 Stücke: Lieferzeit 14-21 Tag (e) |
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SZ1SMB5930BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDD86380-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
LMV331SN3T1G | ONSEMI |
![]() Description: IC: comparator; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; reel,tape; Iio: 1nA Type of integrated circuit: comparator Number of comparators: 1 Mounting: SMT Case: TSOP5 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Delay time: 1.5µs Input bias current: 1nA Operating voltage: 2.7...5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FAN9611MX | ONSEMI |
![]() Description: IC: PMIC; PFC controller; SO16; -40÷125°C; 9÷18V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: SO16 Mounting: SMD Operating temperature: -40...125°C Frequency: 525Hz Supply voltage: 9...18V Output current: -2...1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MM74HCT541WMX | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74ACT241DWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: ACT Kind of package: reel; tape Manufacturer series: ACT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC14538BDTR2G | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Technology: TTL Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Quiescent current: 600µA Kind of package: reel; tape Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14538BDWG | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC14538BDWR2G | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator; Ch: 2; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: HEF4000B Operating temperature: -55...125°C Quiescent current: 5µA |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHCT00AM | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: tube Quiescent current: 20µA Number of inputs: 2 Kind of gate: NAND |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
74VHCT00AMTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; VHCT; -40÷85°C Type of integrated circuit: digital Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Manufacturer series: VHCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Number of inputs: 2 Kind of gate: NAND |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBRS4201T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward voltage: 0.61V Load current: 4A Max. forward impulse current: 100A Max. off-state voltage: 200V Case: SMC Kind of package: reel; tape |
auf Bestellung 2635 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC1G14DFT1G-F22038 | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD3055T4G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MJD3055RLG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NJVMJD3055T4G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVMJD012N06CLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8 Case: LFPAK8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.5nC On-state resistance: 11.9mΩ Power dissipation: 21W Drain current: 42A Drain-source voltage: 60V Pulsed drain current: 153A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVTFS015N04CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74VHC1G14DBVT1G | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMYS011N04CTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 173A Power dissipation: 9.1W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DTC114EM3T5G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NSBC114EPDP6T5G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Quantity in set/package: 8000pcs. Base-emitter resistor: 10kΩ Kind of transistor: BRT; complementary pair |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74VHCT50ADR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT Technology: CMOS; TTL Case: SO14 Mounting: SMD Kind of package: reel; tape Manufacturer series: VHCT Operating temperature: -55...125°C Quiescent current: 40µA Number of channels: 6 Supply voltage: 2...5.5V DC Kind of integrated circuit: buffer; non-inverting Type of integrated circuit: digital |
auf Bestellung 504 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHCT573AMTC | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: VHCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube Quiescent current: 40µA Trigger: level-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1SMB5918BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 10433 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5920BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1928 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5937BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 5645 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5935BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode Type of diode: Zener Case: SMB Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 3W Tolerance: ±5% Zener voltage: 27V Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 3320 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5917BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 4.7V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 6019 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5925BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 11264 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5931BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 606 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5943BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1498 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVB460MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 60V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.74V Max. load current: 8A Max. forward impulse current: 40A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVB540MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 150A Semiconductor structure: single diode Case: DFN5 Mounting: SMD Kind of package: reel; tape Load current: 5A Max. forward voltage: 0.58V Max. load current: 10A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVB560MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Application: automotive industry Load current: 5A Max. forward voltage: 0.78V Max. forward impulse current: 100A Max. load current: 10A Max. off-state voltage: 60V Kind of package: reel; tape Case: DFN5 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVB560MFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Application: automotive industry Load current: 5A Max. forward voltage: 0.78V Max. forward impulse current: 100A Max. load current: 10A Max. off-state voltage: 60V Kind of package: reel; tape Case: DFN5 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTS1045EMFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.6V Load current: 10A Max. load current: 20A Max. off-state voltage: 45V Max. forward impulse current: 210A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTS1045EMFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.6V Load current: 10A Max. load current: 20A Max. off-state voltage: 45V Max. forward impulse current: 210A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
HMHAA280R2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-0%@5mA Collector-emitter voltage: 80V Case: MFP4 Max. off-state voltage: 6V Manufacturer series: HMHAA280 |
auf Bestellung 2070 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP030N06B-F102 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Pulsed drain current: 780A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMFD030N06CT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVMFWD030N06CT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVTFWS030N06CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ESD8472MUT5G | ONSEMI |
![]() Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.3V Breakdown voltage: 7...12V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SZESD8472MUT5G | ONSEMI |
![]() Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.3V Breakdown voltage: 7...12V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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1N5368BG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 47V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
auf Bestellung 949 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5368BRLG | ONSEMI |
![]() Description: Diode: Zener; 5W; 47V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 47V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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NTTFS002N04CLTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 142A Pulsed drain current: 706A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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NVTFS002N04CLTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 142A Pulsed drain current: 706A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
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NVTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MOC3042SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Manufacturer series: MOC304XM Kind of output: triac Trigger current: 10mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 400V Insulation voltage: 4.17kV Case: SMT6 Type of optocoupler: optotriac Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
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NCV8535MN500R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
Produkt ist nicht verfügbar
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FMB2222A |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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NVMFS016N10MCLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS016N10MCLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NVMYS016N10MCLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDB024N08BL7 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 162A
Pulsed drain current: 916A
Power dissipation: 246W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 162A
Pulsed drain current: 916A
Power dissipation: 246W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GRUMMUN2216LT1G |
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.026 EUR |
NSI45020JZT1G |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.39 EUR |
1SMB5930BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1169 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
239+ | 0.3 EUR |
272+ | 0.26 EUR |
329+ | 0.22 EUR |
382+ | 0.19 EUR |
562+ | 0.13 EUR |
596+ | 0.12 EUR |
SZ1SMB5930BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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FDD86380-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LMV331SN3T1G |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
Produkt ist nicht verfügbar
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FAN9611MX |
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Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO16; -40÷125°C; 9÷18V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 525Hz
Supply voltage: 9...18V
Output current: -2...1A
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO16; -40÷125°C; 9÷18V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 525Hz
Supply voltage: 9...18V
Output current: -2...1A
Produkt ist nicht verfügbar
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MM74HCT541WMX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Manufacturer series: HCT
Produkt ist nicht verfügbar
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MC74ACT241DWR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
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MC14538BDTR2G |
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Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Technology: TTL
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of package: reel; tape
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Technology: TTL
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of package: reel; tape
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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MC14538BDWG |
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Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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MC14538BDWR2G |
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Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HEF4000B
Operating temperature: -55...125°C
Quiescent current: 5µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HEF4000B
Operating temperature: -55...125°C
Quiescent current: 5µA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.52 EUR |
74VHCT00AM |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: tube
Quiescent current: 20µA
Number of inputs: 2
Kind of gate: NAND
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: tube
Quiescent current: 20µA
Number of inputs: 2
Kind of gate: NAND
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74VHCT00AMTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; VHCT; -40÷85°C
Type of integrated circuit: digital
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Number of inputs: 2
Kind of gate: NAND
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; VHCT; -40÷85°C
Type of integrated circuit: digital
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Number of inputs: 2
Kind of gate: NAND
Produkt ist nicht verfügbar
Im Einkaufswagen
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MBRS4201T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.61V
Load current: 4A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Case: SMC
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.61V
Load current: 4A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Case: SMC
Kind of package: reel; tape
auf Bestellung 2635 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
52+ | 1.4 EUR |
82+ | 0.88 EUR |
87+ | 0.83 EUR |
1000+ | 0.8 EUR |
MC74HC1G14DFT1G-F22038 |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 162000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.054 EUR |
MJD3055T4G | ![]() |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Produkt ist nicht verfügbar
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MJD3055RLG |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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NJVMJD3055T4G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMJD012N06CLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVTFS015N04CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74VHC1G14DBVT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.045 EUR |
NVMYS011N04CTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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DTC114EM3T5G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NSBC114EPDP6T5G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT; complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74VHCT50ADR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Technology: CMOS; TTL
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VHCT
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 6
Supply voltage: 2...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Technology: CMOS; TTL
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VHCT
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 6
Supply voltage: 2...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
119+ | 0.6 EUR |
134+ | 0.53 EUR |
156+ | 0.46 EUR |
194+ | 0.37 EUR |
205+ | 0.35 EUR |
74VHCT573AMTC |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Quiescent current: 40µA
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Quiescent current: 40µA
Trigger: level-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMB5918BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 10433 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
218+ | 0.33 EUR |
262+ | 0.27 EUR |
343+ | 0.21 EUR |
496+ | 0.14 EUR |
532+ | 0.13 EUR |
1SMB5920BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1928 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
321+ | 0.22 EUR |
388+ | 0.18 EUR |
569+ | 0.13 EUR |
642+ | 0.11 EUR |
1SMB5937BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 5645 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
275+ | 0.26 EUR |
300+ | 0.24 EUR |
374+ | 0.19 EUR |
417+ | 0.17 EUR |
575+ | 0.12 EUR |
1000+ | 0.11 EUR |
1SMB5935BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 27V
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 27V
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 3320 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
261+ | 0.27 EUR |
295+ | 0.24 EUR |
348+ | 0.21 EUR |
397+ | 0.18 EUR |
500+ | 0.14 EUR |
550+ | 0.13 EUR |
1SMB5917BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 6019 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
285+ | 0.25 EUR |
329+ | 0.22 EUR |
481+ | 0.15 EUR |
556+ | 0.13 EUR |
582+ | 0.12 EUR |
1SMB5925BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 11264 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
211+ | 0.34 EUR |
243+ | 0.29 EUR |
353+ | 0.2 EUR |
414+ | 0.17 EUR |
459+ | 0.16 EUR |
486+ | 0.15 EUR |
1SMB5931BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 606 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
193+ | 0.37 EUR |
236+ | 0.3 EUR |
391+ | 0.18 EUR |
477+ | 0.15 EUR |
506+ | 0.14 EUR |
538+ | 0.13 EUR |
1SMB5943BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
218+ | 0.33 EUR |
244+ | 0.29 EUR |
329+ | 0.22 EUR |
376+ | 0.19 EUR |
486+ | 0.15 EUR |
511+ | 0.14 EUR |
532+ | 0.13 EUR |
NRVB460MFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. load current: 8A
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. load current: 8A
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVB540MFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVB560MFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVB560MFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTS1045EMFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTS1045EMFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
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HMHAA280R2 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-0%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: HMHAA280
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-0%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: HMHAA280
auf Bestellung 2070 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
99+ | 0.73 EUR |
169+ | 0.42 EUR |
179+ | 0.4 EUR |
FDP030N06B-F102 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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NTMFD030N06CT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWD030N06CT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS030N06CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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ESD8472MUT5G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
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SZESD8472MUT5G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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1N5368BG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
163+ | 0.44 EUR |
180+ | 0.4 EUR |
236+ | 0.3 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
500+ | 0.22 EUR |
1N5368BRLG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NTTFS002N04CLTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS002N04CLTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS002N04CTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3042SM |
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Manufacturer series: MOC304XM
Kind of output: triac
Trigger current: 10mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 400V
Insulation voltage: 4.17kV
Case: SMT6
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Manufacturer series: MOC304XM
Kind of output: triac
Trigger current: 10mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 400V
Insulation voltage: 4.17kV
Case: SMT6
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
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