| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NCP1937C61DR2G | ONSEMI |
 Category: Drivers - integrated circuitsDescription: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SDTA114YET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NSVDTA114YM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Application: automotive industry Current gain: 80...140 |
Produkt ist nicht verfügbar |
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NCP4303ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 8.9÷30VDC Type of integrated circuit: PMIC Output current: 2.5...5A Frequency: 0.5MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...30V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMS3669S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Mounting: SMD Power dissipation: 2.2/2.5W Gate charge: 24/34nC Polarisation: unipolar Drain current: 24/60A Kind of channel: enhancement Drain-source voltage: 30/30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20/±12V Kind of package: reel; tape Case: Power56 On-state resistance: 14.5/7.1mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MBR2535CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.72V Max. load current: 30A Max. forward impulse current: 150A Kind of package: tube |
Produkt ist nicht verfügbar |
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NCV3066DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 150kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Output voltage: 3...40V Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 150kHz Number of channels: 1 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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FDS4672A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Mounting: SMD Case: SO8 Power dissipation: 2.5W Polarisation: unipolar Drain current: 11A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 21mΩ |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAV99 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Case: SOT23 Capacitance: 1.5pF Max. forward impulse current: 8A Max. forward voltage: 1.25V Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MC74AC573DWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SOIC20 Family: AC Kind of output: 3-state Kind of package: reel; tape Manufacturer series: AC Operating temperature: -40...85°C Technology: CMOS |
Produkt ist nicht verfügbar |
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NTS4409NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Power dissipation: 0.28W Gate charge: 1.2nC Polarisation: unipolar Drain current: 0.75A Kind of channel: enhancement Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.4Ω |
Produkt ist nicht verfügbar |
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| NVS4409NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 750mA; Idm: 3A; 280mW; SC70 Mounting: SMD Case: SC70 Pulsed drain current: 3A Power dissipation: 0.28W Gate charge: 1.2nC Polarisation: unipolar Drain current: 0.75A Kind of channel: enhancement Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.35Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MBR1060G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FAN7391MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V Case: SO14 Output current: 4.5A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FAN73912AMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V Case: SO16 Output current: 2...3A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FAN7393AMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V Case: SO14 Output current: 2.5A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FAN73933MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP14 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 35ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FAN73912MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V Case: SO16 Output current: 2...3A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSS40301MZ4T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2W Case: SOT223-4; TO261-4 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Current gain: 200...500 |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |
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NVR5124PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.67A Power dissipation: 0.19W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2679 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF190N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Pulsed drain current: 60.6A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FCPF190N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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4N37M | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDP4D5N10C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3 Pulsed drain current: 512A Power dissipation: 150W Gate charge: 48nC Polarisation: unipolar Drain current: 128A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 4.5mΩ Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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US1AFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTR4170NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1359 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTE4153NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.66A Power dissipation: 0.3W Case: SC89 Gate-source voltage: ±6V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3504 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |
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LM555CN | ONSEMI |
Category: Watchdog and reset circuits Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC Type of integrated circuit: peripheral circuit Kind of integrated circuit: astable; monostable; RC timer Supply voltage: 4.5...16V DC Case: DIP8 DC supply current: 7.5mA Output current: 0.2A Mounting: THT Operating temperature: 0...70°C Kind of package: tube Number of channels: 1 Controlled voltage: 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| UJ3N065080K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 72A Power dissipation: 190W Case: TO247-3 Gate-source voltage: -20...20V On-state resistance: 0.13Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| UJ3N065025K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 250A Power dissipation: 441W Case: TO247-3 Gate-source voltage: -20...20V On-state resistance: 43mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| UJ3N120035K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 185A Power dissipation: 429W Case: TO247-3 Gate-source voltage: -20...20V On-state resistance: 76mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| UJ3N120065K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 90A Power dissipation: 254W Case: TO247-3 Gate-source voltage: -30...20V On-state resistance: 142mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| UF3N120007K4S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 120A Pulsed drain current: 550A Power dissipation: 789W Case: TO247-4 Gate-source voltage: ±30V On-state resistance: 15.5mΩ Mounting: THT Gate charge: 830nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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P6KE160A | ONSEMI |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 136V Breakdown voltage: 152V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 5µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FJP1943RTU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 230V Collector current: 15A Power dissipation: 80W Case: TO220AB Current gain: 55...160 Mounting: THT Kind of package: tube Frequency: 30MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MJE15029G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMBTA42 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.24W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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74ACT14SCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Kind of input: with Schmitt trigger Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Quiescent current: 40µA Number of inputs: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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74ACT14MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Kind of input: with Schmitt trigger Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Number of inputs: 1 Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2SC4135T-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Collector-emitter voltage: 100V Power dissipation: 1W Polarisation: bipolar Type of transistor: NPN Current gain: 200...400 Frequency: 120MHz Collector current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP167AMX330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 3.3V Output current: 0.7A Case: XDFN4 Mounting: SMD Manufacturer series: NCP167 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP167AMX180TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 1.8V Output current: 0.7A Case: XDFN4 Mounting: SMD Manufacturer series: NCP167 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| ADP3211AMNR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: QFN32 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP171AMX165160TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: XDFN4 Operating temperature: -40...85°C Output current: 80mA Output voltage: 1.65V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP171 Input voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP171AMX180175TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: XDFN4 Operating temperature: -40...85°C Output current: 80mA Voltage drop: 0.11V Output voltage: 1.8V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP171 Input voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP171AMX330310TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: XDFN4 Operating temperature: -40...85°C Output current: 80mA Voltage drop: 55mV Output voltage: 3.3V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP171 Input voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NTLUS030N03CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.9A Power dissipation: 1.49W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 3.7nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MBR2045MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape Mounting: SMD Max. forward voltage: 0.61V Max. off-state voltage: 45V Load current: 20A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5x6 Type of diode: Schottky rectifying Max. forward impulse current: 0.4kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FQA40N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN Mounting: THT Pulsed drain current: 160A Power dissipation: 280W Gate charge: 110nC Polarisation: unipolar Drain current: 25A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO3PN On-state resistance: 70mΩ |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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74VHC00MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: VHC Operating temperature: -40...85°C Quiescent current: 20µA Kind of package: reel; tape Supply voltage: 2...5.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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HCPL0501 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 15-30%@16mA Transfer rate: 1Mbps Case: SO8 Turn-on time: 450ns Turn-off time: 0.3µs Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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HCPL0501R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 15-30%@16mA Transfer rate: 1Mbps Case: SO8 Turn-on time: 450ns Turn-off time: 0.3µs Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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GBU8KS | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMF5062 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V Type of integrated circuit: driver Kind of integrated circuit: high-side Case: PQFN Supply voltage: 5...12V Mounting: SMD Integrated circuit features: MOSFET Operating voltage: 30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
FDC6306P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.9A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDC640P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDC6310P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 184mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDC6329L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Case: SuperSOT-6 On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 2.5...8V DC Control voltage: 1.5...8V DC Output current: 2.5A Type of integrated circuit: power switch Kind of output: P-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDC642P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Power dissipation: 1.2W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDC654P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCP1937C61DR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDTA114YET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTA114YM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4303ADR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 8.9÷30VDC
Type of integrated circuit: PMIC
Output current: 2.5...5A
Frequency: 0.5MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...30V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 8.9÷30VDC
Type of integrated circuit: PMIC
Output current: 2.5...5A
Frequency: 0.5MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...30V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS3669S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Power dissipation: 2.2/2.5W
Gate charge: 24/34nC
Polarisation: unipolar
Drain current: 24/60A
Kind of channel: enhancement
Drain-source voltage: 30/30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±12V
Kind of package: reel; tape
Case: Power56
On-state resistance: 14.5/7.1mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Power dissipation: 2.2/2.5W
Gate charge: 24/34nC
Polarisation: unipolar
Drain current: 24/60A
Kind of channel: enhancement
Drain-source voltage: 30/30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±12V
Kind of package: reel; tape
Case: Power56
On-state resistance: 14.5/7.1mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2535CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCV3066DR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 150kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 150kHz
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 150kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 150kHz
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS4672A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 21mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 21mΩ
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV99 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOT23
Capacitance: 1.5pF
Max. forward impulse current: 8A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOT23
Capacitance: 1.5pF
Max. forward impulse current: 8A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC573DWR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Operating temperature: -40...85°C
Technology: CMOS
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTS4409NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.4Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVS4409NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 750mA; Idm: 3A; 280mW; SC70
Mounting: SMD
Case: SC70
Pulsed drain current: 3A
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.35Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 750mA; Idm: 3A; 280mW; SC70
Mounting: SMD
Case: SC70
Pulsed drain current: 3A
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.35Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1060G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN7391MX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 4.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 4.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN73912AMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN7393AMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 2.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 2.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN73933MX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 35ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 35ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN73912MX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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| NSS40301MZ4T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 200...500
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 200...500
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
| NVR5124PLT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2679 Stücke:
Lieferzeit 14-21 Tag (e)
| FCPF190N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Pulsed drain current: 60.6A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Pulsed drain current: 60.6A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF190N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| 4N37M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| FDP4D5N10C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Pulsed drain current: 512A
Power dissipation: 150W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.5mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Pulsed drain current: 512A
Power dissipation: 150W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.5mΩ
Mounting: THT
Produkt ist nicht verfügbar
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| US1AFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NTR4170NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1359 Stücke:
Lieferzeit 14-21 Tag (e)
| NTE4153NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3504 Stücke:
Lieferzeit 14-21 Tag (e)
| LM555CN |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: DIP8
DC supply current: 7.5mA
Output current: 0.2A
Mounting: THT
Operating temperature: 0...70°C
Kind of package: tube
Number of channels: 1
Controlled voltage: 10V
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: DIP8
DC supply current: 7.5mA
Output current: 0.2A
Mounting: THT
Operating temperature: 0...70°C
Kind of package: tube
Number of channels: 1
Controlled voltage: 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| UJ3N065080K3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| UJ3N065025K3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 250A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 250A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| UJ3N120035K3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 185A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 76mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 185A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 76mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| UJ3N120065K3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -30...20V
On-state resistance: 142mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -30...20V
On-state resistance: 142mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| UF3N120007K4S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 120A
Pulsed drain current: 550A
Power dissipation: 789W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 830nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 120A
Pulsed drain current: 550A
Power dissipation: 789W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 830nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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| P6KE160A |
|
Hersteller: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| FJP1943RTU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 80W
Case: TO220AB
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 80W
Case: TO220AB
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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| MJE15029G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBTA42 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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Stück im Wert von UAH
| 74ACT14SCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ACT14MTC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
Produkt ist nicht verfügbar
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| 2SC4135T-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Frequency: 120MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Frequency: 120MHz
Collector current: 2A
Produkt ist nicht verfügbar
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| NCP167AMX330TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| NCP167AMX180TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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| ADP3211AMNR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
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| NCP171AMX165160TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Output voltage: 1.65V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Output voltage: 1.65V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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| NCP171AMX180175TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 0.11V
Output voltage: 1.8V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 0.11V
Output voltage: 1.8V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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| NCP171AMX330310TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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| NTLUS030N03CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 3.7nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 3.7nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| MBR2045MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Mounting: SMD
Max. forward voltage: 0.61V
Max. off-state voltage: 45V
Load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Max. forward impulse current: 0.4kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Mounting: SMD
Max. forward voltage: 0.61V
Max. off-state voltage: 45V
Load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Max. forward impulse current: 0.4kA
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| FQA40N25 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 280W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PN
On-state resistance: 70mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 280W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PN
On-state resistance: 70mΩ
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| 74VHC00MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| HCPL0501 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| HCPL0501R2 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| GBU8KS |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| FDMF5062 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PQFN
Supply voltage: 5...12V
Mounting: SMD
Integrated circuit features: MOSFET
Operating voltage: 30V
Category: Power switches - integrated circuits
Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PQFN
Supply voltage: 5...12V
Mounting: SMD
Integrated circuit features: MOSFET
Operating voltage: 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDC6306P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Produkt ist nicht verfügbar
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| FDC640P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
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| FDC6310P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| FDC6329L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDC642P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDC654P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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