Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (142597) > Seite 2377 nach 2377

Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2370 2372 2373 2374 2375 2376 2377
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BSR57 BSR57 ONSEMI bsr57-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Power dissipation: 0.25W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 20mA
Gate current: 50mA
On-state resistance: 40Ω
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
375+0.19 EUR
420+0.17 EUR
500+0.15 EUR
Mindestbestellmenge: 335
Im Einkaufswagen  Stück im Wert von  UAH
MJ11032G MJ11032G ONSEMI MJ11032G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 120V
Collector current: 30A
Kind of transistor: Darlington
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.27 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NCV6324CMTAATBG ONSEMI ncp6324-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Case: WDFN8
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV6324CMTAAWTBG ONSEMI ncp6324-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08 ONSEMI fdp032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 169nC
Pulsed drain current: 940A
Power dissipation: 375W
On-state resistance: 3.2mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08B-F102 ONSEMI fdp032n08b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 111nC
Pulsed drain current: 844A
Power dissipation: 263W
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJW21193G NJW21193G ONSEMI NJW21193_4.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Type of transistor: PNP
Case: TO3P
Current gain: 20...70
Collector current: 16A
Power dissipation: 200W
Collector-emitter voltage: 250V
Frequency: 4MHz
Application: automotive industry
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.13 EUR
15+4.86 EUR
18+4.18 EUR
30+3.4 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
FDP80N06 FDP80N06 ONSEMI fdp80n06-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS6930A FDS6930A ONSEMI fds6930a-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 68mΩ
Power dissipation: 2W
Drain current: 5.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR120RLG ONSEMI mur120-d.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP42C TIP42C ONSEMI TIP42.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM358N LM358N ONSEMI LM358N-fai.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5913BT3G 1SMB5913BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1949 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
205+0.35 EUR
243+0.29 EUR
374+0.19 EUR
443+0.16 EUR
610+0.12 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5913BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUF76629D3ST ONSEMI huf76629d3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 52mΩ
Gate-source voltage: ±16V
Drain current: 20A
Drain-source voltage: 100V
Power dissipation: 150W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDT86106LZ FDT86106LZ ONSEMI fdt86106lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA56WT1G MMBTA56WT1G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
500+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56LT1G SMMBTA56LT1G ONSEMI mmbta55lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
253+0.28 EUR
324+0.22 EUR
403+0.18 EUR
418+0.17 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56LT3G ONSEMI mmbta55lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56WT1G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56WT3G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA56 MMBTA56 ONSEMI MMBTA56-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4007 1N4007 ONSEMI 1N4007-FAI.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6KE10A P6KE10A ONSEMI P6KE10A-FAI-DTE.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD7381MUT5G ONSEMI esd7381-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; X3DFN2; reel,tape
Semiconductor structure: unidirectional
Case: X3DFN2
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR0530 ONSEMI MBR0530.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC846ALT1G SBC846ALT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZT660 ONSEMI nzt660a-d.pdf FAIR-S-A0000083804-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZT660A ONSEMI nzt660a-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS6H880NLTAG ONSEMI nttfs6h880nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H880NLWFTAG ONSEMI nvtfs6h880nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H880NTAG ONSEMI nvtfs6h880n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H880NWFTAG ONSEMI nvtfs6h880n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR130T3G MBR130T3G ONSEMI mbr130t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Case: SOD123
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU4A GBU4A ONSEMI GBU4x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMUN2115LT1G MMUN2115LT1G ONSEMI MMUN2115.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
auf Bestellung 3026 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
715+0.1 EUR
1153+0.062 EUR
1382+0.052 EUR
1846+0.039 EUR
2440+0.029 EUR
3026+0.024 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
1N5368BG 1N5368BG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 842 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
205+0.35 EUR
228+0.31 EUR
300+0.24 EUR
325+0.22 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BSR57 bsr57-d.pdf
BSR57
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Power dissipation: 0.25W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 20mA
Gate current: 50mA
On-state resistance: 40Ω
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
335+0.21 EUR
375+0.19 EUR
420+0.17 EUR
500+0.15 EUR
Mindestbestellmenge: 335
Im Einkaufswagen  Stück im Wert von  UAH
MJ11032G MJ11032G.PDF
MJ11032G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 120V
Collector current: 30A
Kind of transistor: Darlington
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.27 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NCV6324CMTAATBG ncp6324-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Case: WDFN8
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV6324CMTAAWTBG ncp6324-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08 fdp032n08-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 169nC
Pulsed drain current: 940A
Power dissipation: 375W
On-state resistance: 3.2mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08B-F102 fdp032n08b-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 111nC
Pulsed drain current: 844A
Power dissipation: 263W
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJW21193G NJW21193_4.pdf
NJW21193G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Type of transistor: PNP
Case: TO3P
Current gain: 20...70
Collector current: 16A
Power dissipation: 200W
Collector-emitter voltage: 250V
Frequency: 4MHz
Application: automotive industry
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
15+4.86 EUR
18+4.18 EUR
30+3.4 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
FDP80N06 fdp80n06-d.pdf
FDP80N06
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS6930A fds6930a-d.pdf
FDS6930A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 68mΩ
Power dissipation: 2W
Drain current: 5.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR120RLG description mur120-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP42C TIP42.pdf
TIP42C
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM358N LM358N-fai.pdf
LM358N
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5913BT3G 1SMB59xxBT3G.PDF
1SMB5913BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
205+0.35 EUR
243+0.29 EUR
374+0.19 EUR
443+0.16 EUR
610+0.12 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5913BT3G 1SMB59xxBT3G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUF76629D3ST huf76629d3s-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 52mΩ
Gate-source voltage: ±16V
Drain current: 20A
Drain-source voltage: 100V
Power dissipation: 150W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDT86106LZ fdt86106lz-d.pdf
FDT86106LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA56WT1G mmbta56wt1-d.pdf
MMBTA56WT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
500+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56LT1G mmbta55lt1-d.pdf
SMMBTA56LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
253+0.28 EUR
324+0.22 EUR
403+0.18 EUR
418+0.17 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56LT3G mmbta55lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56WT1G mmbta56wt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA56WT3G mmbta56wt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA56 MMBTA56-DTE.pdf
MMBTA56
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4007 1N4007-FAI.pdf
1N4007
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6KE10A P6KE10A-FAI-DTE.pdf
P6KE10A
Hersteller: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD7381MUT5G esd7381-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; X3DFN2; reel,tape
Semiconductor structure: unidirectional
Case: X3DFN2
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR0530 MBR0530.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC846ALT1G BC846ALT1G.PDF
SBC846ALT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZT660 nzt660a-d.pdf FAIR-S-A0000083804-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZT660A nzt660a-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS6H880NLTAG nttfs6h880nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H880NLWFTAG nvtfs6h880nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H880NTAG nvtfs6h880n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H880NWFTAG nvtfs6h880n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR130T3G mbr130t1-d.pdf
MBR130T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Case: SOD123
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU4A GBU4x.PDF
GBU4A
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMUN2115LT1G MMUN2115.PDF
MMUN2115LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
auf Bestellung 3026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
1153+0.062 EUR
1382+0.052 EUR
1846+0.039 EUR
2440+0.029 EUR
3026+0.024 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
1N5368BG description 1N53xx.PDF
1N5368BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 842 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
205+0.35 EUR
228+0.31 EUR
300+0.24 EUR
325+0.22 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2370 2372 2373 2374 2375 2376 2377