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TIP29AG | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP29CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP29BG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV3063DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV3063MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: DFN8 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NLAS2750MUTAG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA Type of integrated circuit: analog switch Kind of package: reel; tape Mounting: SMD Kind of output: SPDT x2 Case: UQFN10 Operating temperature: -40...85°C Quiescent current: 250nA Supply voltage: 1.8...5.5V DC Number of channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SBE805-TL-W | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape Reverse recovery time: 10ns Leakage current: 30µA Load current: 0.5A Max. forward voltage: 0.55V Max. forward impulse current: 5A Max. off-state voltage: 30V Semiconductor structure: double independent Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD Case: SOT25 Capacitance: 16pF |
Produkt ist nicht verfügbar |
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SBE807-TL-W | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape Reverse recovery time: 10ns Leakage current: 15µA Load current: 1A Max. forward voltage: 0.53V Max. forward impulse current: 10A Max. off-state voltage: 30V Semiconductor structure: double independent Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOT25 Capacitance: 27pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX85C5V1 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Mounting: THT Semiconductor structure: single diode Manufacturer series: BZX85C Tolerance: ±5% Kind of package: bulk Case: DO41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBAS16LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1719 Stücke: Lieferzeit 14-21 Tag (e) |
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| FXMA108BQX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 8 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: DQFN20 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 8 Number of outputs: 8 Integrated circuit features: auto-direction sensing Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SMUN5230DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SC70-6; SC88; SOT363 Type of transistor: NPN x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| S310 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.9V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTF3055-100T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 10.6nC |
auf Bestellung 1365 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJF3055G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP Type of transistor: NPN Polarisation: bipolar Power dissipation: 30W Case: TO220FP Mounting: THT Kind of package: tube Frequency: 2MHz Collector current: 10A Current gain: 20...100 Collector-emitter voltage: 90V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP4305DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP4305DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: DFN8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP4305DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: WDFN8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MMBTA42 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.24W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2SC4027T-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.5A Power dissipation: 1W Case: DPAK Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8705ML33TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD Application: automotive industry Case: DFNW8 Mounting: SMD Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Output voltage: 3.3V Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8705MT33TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD Application: automotive industry Case: WDFN6 Mounting: SMD Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Output voltage: 3.3V Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8705MWADJTCG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A Application: automotive industry Case: DFN8 Mounting: SMD Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Output voltage: 0.8...5.15V Number of channels: 1 Kind of voltage regulator: adjustable; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVTYS010N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33 Mounting: SMD Case: LFPAK33 On-state resistance: 9.8mΩ Gate-source voltage: ±20V Power dissipation: 23W Drain-source voltage: 60V Pulsed drain current: 217A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 13nC Drain current: 51A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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RGF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
auf Bestellung 2726 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDD5680 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.5A Pulsed drain current: 100A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVDTA114EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 35...60 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RS1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RS1BFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NRVHPRS1BFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP1616A1DR2G | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Mounting: SMD Case: SO10 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -500...800mA Topology: boost Operating voltage: 9...28V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMTS0D7N06CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 477A Pulsed drain current: 900A Power dissipation: 147.3W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.68mΩ Mounting: SMD Gate charge: 225nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: TDFN8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV25128VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 10MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV25128YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 10MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 2.7V Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SZMMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 2.7V Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTMFS6H852NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS6H852NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS6H852NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UJ4SC075018B7S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 52A Pulsed drain current: 208A Power dissipation: 259W Case: TO263-7 Gate-source voltage: -25...25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UJ4SC075018L8S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 53A Pulsed drain current: 208A Power dissipation: 349W Case: H-PDSO-F8 Gate-source voltage: -25...25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1N4936 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UJ3D1725K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 25A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1700V Max. forward impulse current: 163A Power dissipation: 69.8W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MMBF5457 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 3mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 1988 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMSZ5226CT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33152VDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: 1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...85°C Supply voltage: 6.1...18V |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTP095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTP095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVB095N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTHL095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTHL095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.8A Pulsed drain current: 90A Power dissipation: 272W Case: TO247 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTMT095N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTPF095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TIP29AG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 63+ | 1.14 EUR |
| 84+ | 0.86 EUR |
| TIP29CG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.49 EUR |
| TIP29BG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| NCV3063DR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV3063MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLAS2750MUTAG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBE805-TL-W |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBE807-TL-W |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C5V1 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBAS16LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 758+ | 0.094 EUR |
| 848+ | 0.084 EUR |
| 1289+ | 0.055 EUR |
| FXMA108BQX |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5230DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S310 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTF3055-100T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.6nC
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 89+ | 0.81 EUR |
| 107+ | 0.67 EUR |
| 117+ | 0.61 EUR |
| 200+ | 0.55 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.42 EUR |
| MJF3055G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4305DDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4305DMNTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4305DMTTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA42 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| 2SC4027T-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
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| NCV8705ML33TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Application: automotive industry
Case: DFNW8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Application: automotive industry
Case: DFNW8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
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| NCV8705MT33TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD
Application: automotive industry
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD
Application: automotive industry
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
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| NCV8705MWADJTCG |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Application: automotive industry
Case: DFN8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 0.8...5.15V
Number of channels: 1
Kind of voltage regulator: adjustable; LDO; linear
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Application: automotive industry
Case: DFN8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 0.8...5.15V
Number of channels: 1
Kind of voltage regulator: adjustable; LDO; linear
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| NVTYS010N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
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| GF1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
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| RGF1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
auf Bestellung 2726 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 242+ | 0.3 EUR |
| 304+ | 0.24 EUR |
| 500+ | 0.21 EUR |
| FDD5680 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 100A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 100A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NSVDTA114EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| RS1B |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1BFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| NRVHPRS1BFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| NCP1616A1DR2G |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -500...800mA
Topology: boost
Operating voltage: 9...28V DC
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -500...800mA
Topology: boost
Operating voltage: 9...28V DC
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| NVMTS0D7N06CLTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 477A
Pulsed drain current: 900A
Power dissipation: 147.3W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.68mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 477A
Pulsed drain current: 900A
Power dissipation: 147.3W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.68mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: reel; tape
Kind of channel: enhancement
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| CAT25128YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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| CAT25128VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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| CAT25128VP2I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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| CAT25128XI-T2 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CAV25128VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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| CAV25128YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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| MMSZ5223BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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| SZMMSZ5223BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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| NTMFS6H852NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVMFS6H852NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS6H852NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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| UJ4SC075018B7S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 259W
Case: TO263-7
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 259W
Case: TO263-7
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| UJ4SC075018L8S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 53A
Pulsed drain current: 208A
Power dissipation: 349W
Case: H-PDSO-F8
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 53A
Pulsed drain current: 208A
Power dissipation: 349W
Case: H-PDSO-F8
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| 1N4936 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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| BC638TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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| UJ3D1725K2 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1700V
Max. forward impulse current: 163A
Power dissipation: 69.8W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1700V
Max. forward impulse current: 163A
Power dissipation: 69.8W
Kind of package: tube
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| MMBF5457 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1988 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 323+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| 368+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| MMSZ5226CT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
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| MC33152VDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.1 EUR |
| NTP095N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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Stück im Wert von UAH
| NTP095N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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| NVB095N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTHL095N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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| NTHL095N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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| NTMT095N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTPF095N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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