Foto | Bezeichnung | Hersteller | Beschreibung |
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BAV23S | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape |
auf Bestellung 3262 Stücke: Lieferzeit 14-21 Tag (e) |
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TL431AIDG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: tube Maximum output current: 0.1A |
auf Bestellung 332 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRA340T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.39V Kind of package: reel; tape |
auf Bestellung 15124 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33063ADG | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33063ADR2G | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33063AP1G | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DIP8 Mounting: THT Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33063AVDG | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33063AVPG | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DIP8 Mounting: THT Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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FDLL4148 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 36779 Stücke: Lieferzeit 14-21 Tag (e) |
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FDLL4148-D87Z | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74HC245ADTG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Manufacturer series: HC |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC245ADTR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC245ADWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Manufacturer series: HC |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC245ADWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MM74HC245AMTC | ONSEMI |
![]() Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20WB Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC Manufacturer series: HC |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC245AMTCX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MM74HC245ASJ | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Case: SOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MM74HC245AWM | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Case: SO20-W Mounting: SMD Number of channels: 8 Operating temperature: -40...85°C Manufacturer series: HC Supply voltage: 2...6V DC Quiescent current: 80µA Kind of output: 3-state |
auf Bestellung 322 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC245AWMX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4448WS | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape |
auf Bestellung 2305 Stücke: Lieferzeit 14-21 Tag (e) |
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BD13910STU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 40...250 Mounting: THT Kind of package: tube |
auf Bestellung 641 Stücke: Lieferzeit 14-21 Tag (e) |
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BD13916S | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD13916STU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: tube |
auf Bestellung 851 Stücke: Lieferzeit 14-21 Tag (e) |
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BD139G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
auf Bestellung 2289 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D74Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N7000-D75Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000BU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N7000TA | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
auf Bestellung 601 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Technology: DMOS |
auf Bestellung 7537 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D75Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
auf Bestellung 409 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D26Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
auf Bestellung 783 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D27Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
auf Bestellung 3801 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-40LT1G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 8088 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-40LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
CAT24C08C4ATR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
CAT24C08C4CTR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
CAT24C08C5ATR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BD14010STU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO126ISO Collector-emitter voltage: 80V Current gain: 63...160 |
auf Bestellung 1854 Stücke: Lieferzeit 14-21 Tag (e) |
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BD140G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225 Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO225 Collector-emitter voltage: 80V Current gain: 40...250 |
auf Bestellung 316 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1401 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
auf Bestellung 2727 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1403 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: double series Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBD1404 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
auf Bestellung 1844 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1404A | ONSEMI |
![]() Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 175V Max. forward voltage: 1.25V Load current: 0.6A Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBD1405 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common anode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
auf Bestellung 723 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1405A | ONSEMI |
![]() Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 175V Max. forward voltage: 1.25V Load current: 0.6A Semiconductor structure: common anode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N3904BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz |
auf Bestellung 7045 Stücke: Lieferzeit 14-21 Tag (e) |
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2N3904TFR | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 1146 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 43650 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138LT3G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
auf Bestellung 12852 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138W | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 6009 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBFJ113 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA Mounting: SMD; SMD Case: SOT23; SOT23 Gate current: 50mA; 50mA Drain current: 2mA; 2mA On-state resistance: 100Ω; 100Ω Type of transistor: N-JFET; N-JFET Power dissipation: 0.35W; 0.35W Polarisation: unipolar; unipolar Kind of package: reel; tape; reel; tape Gate-source voltage: -35V; -35V |
auf Bestellung 4678 Stücke: Lieferzeit 14-21 Tag (e) |
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BYW80-200G | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 16A Features of semiconductor devices: ultrafast switching |
auf Bestellung 1408 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448TR | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.5W |
auf Bestellung 9443 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2904DR2G | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Mounting: SMT Operating temperature: -40...105°C Case: SO8 Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1MHz Input offset voltage: 10mV Kind of package: reel; tape Slew rate: 0.3V/μs Input offset current: 45...200nA Input bias current: 50nA Voltage supply range: ± 1.5...16V DC; 3...32V DC |
auf Bestellung 2472 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40N60SFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40N60SMD | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40N60UFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
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FGAF40N60UFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 20A Pulsed collector current: 160A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BAV23S |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
auf Bestellung 3262 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
391+ | 0.18 EUR |
601+ | 0.12 EUR |
728+ | 0.098 EUR |
1283+ | 0.056 EUR |
1356+ | 0.053 EUR |
3000+ | 0.051 EUR |
TL431AIDG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
196+ | 0.37 EUR |
237+ | 0.3 EUR |
269+ | 0.27 EUR |
296+ | 0.24 EUR |
MBRA340T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
auf Bestellung 15124 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
185+ | 0.39 EUR |
234+ | 0.31 EUR |
264+ | 0.27 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |
MC33063ADG | ![]() |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
67+ | 1.07 EUR |
MC33063ADR2G | ![]() |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.66 EUR |
73+ | 0.99 EUR |
87+ | 0.83 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
MC33063AP1G | ![]() |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.86 EUR |
60+ | 1.19 EUR |
96+ | 0.75 EUR |
102+ | 0.71 EUR |
MC33063AVDG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
MC33063AVPG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.1 EUR |
56+ | 1.3 EUR |
96+ | 0.75 EUR |
102+ | 0.71 EUR |
FDLL4148 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 36779 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
546+ | 0.13 EUR |
736+ | 0.097 EUR |
807+ | 0.089 EUR |
1185+ | 0.06 EUR |
1389+ | 0.051 EUR |
1558+ | 0.046 EUR |
2233+ | 0.032 EUR |
2891+ | 0.025 EUR |
4717+ | 0.015 EUR |
FDLL4148-D87Z |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC245ADTG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.76 EUR |
69+ | 1.04 EUR |
83+ | 0.87 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
MC74HC245ADTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC245ADWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
91+ | 0.79 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
MC74HC245ADWR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC245AMTC |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
82+ | 0.87 EUR |
101+ | 0.71 EUR |
111+ | 0.65 EUR |
117+ | 0.61 EUR |
122+ | 0.59 EUR |
MM74HC245AMTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC245ASJ |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Case: SOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Case: SOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC245AWM |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Case: SO20-W
Mounting: SMD
Number of channels: 8
Operating temperature: -40...85°C
Manufacturer series: HC
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Case: SO20-W
Mounting: SMD
Number of channels: 8
Operating temperature: -40...85°C
Manufacturer series: HC
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of output: 3-state
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.87 EUR |
62+ | 1.15 EUR |
87+ | 0.82 EUR |
92+ | 0.78 EUR |
114+ | 0.76 EUR |
266+ | 0.75 EUR |
MM74HC245AWMX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4448WS |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
auf Bestellung 2305 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
589+ | 0.12 EUR |
794+ | 0.09 EUR |
1161+ | 0.062 EUR |
1530+ | 0.047 EUR |
2305+ | 0.031 EUR |
BD13910STU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
auf Bestellung 641 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
105+ | 0.68 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
300+ | 0.42 EUR |
540+ | 0.41 EUR |
BD13916S |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD13916STU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
auf Bestellung 851 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
88+ | 0.82 EUR |
109+ | 0.66 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
540+ | 0.36 EUR |
BD139G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
74+ | 0.97 EUR |
136+ | 0.53 EUR |
144+ | 0.5 EUR |
2N7000-D26Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 2289 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
215+ | 0.33 EUR |
295+ | 0.24 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
2000+ | 0.13 EUR |
2N7000-D74Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7000-D75Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
180+ | 0.4 EUR |
230+ | 0.31 EUR |
334+ | 0.21 EUR |
477+ | 0.15 EUR |
506+ | 0.14 EUR |
2N7000BU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7000TA |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
auf Bestellung 601 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
191+ | 0.37 EUR |
235+ | 0.3 EUR |
281+ | 0.25 EUR |
338+ | 0.21 EUR |
500+ | 0.14 EUR |
BS170 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 7537 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
291+ | 0.25 EUR |
382+ | 0.19 EUR |
500+ | 0.14 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
BS170-D75Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
182+ | 0.39 EUR |
258+ | 0.28 EUR |
317+ | 0.23 EUR |
409+ | 0.17 EUR |
BS170-D26Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
209+ | 0.34 EUR |
311+ | 0.23 EUR |
365+ | 0.2 EUR |
491+ | 0.15 EUR |
521+ | 0.14 EUR |
BS170-D27Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 3801 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
313+ | 0.23 EUR |
397+ | 0.18 EUR |
443+ | 0.16 EUR |
589+ | 0.12 EUR |
1000+ | 0.11 EUR |
BC807-40LT1G | ![]() |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 8088 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
834+ | 0.086 EUR |
1021+ | 0.07 EUR |
1359+ | 0.053 EUR |
1667+ | 0.043 EUR |
2017+ | 0.035 EUR |
3572+ | 0.02 EUR |
3760+ | 0.019 EUR |
BC807-40LT3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT24C08C4ATR |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT24C08C4CTR |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT24C08C5ATR |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD14010STU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Collector-emitter voltage: 80V
Current gain: 63...160
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Collector-emitter voltage: 80V
Current gain: 63...160
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
80+ | 0.9 EUR |
87+ | 0.83 EUR |
121+ | 0.59 EUR |
128+ | 0.56 EUR |
BD140G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO225
Collector-emitter voltage: 80V
Current gain: 40...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO225
Collector-emitter voltage: 80V
Current gain: 40...250
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
80+ | 0.9 EUR |
114+ | 0.63 EUR |
121+ | 0.59 EUR |
250+ | 0.57 EUR |
MMBD1401 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
auf Bestellung 2727 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
382+ | 0.19 EUR |
585+ | 0.12 EUR |
693+ | 0.1 EUR |
953+ | 0.075 EUR |
1009+ | 0.071 EUR |
1047+ | 0.068 EUR |
MMBD1403 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1404 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
auf Bestellung 1844 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
212+ | 0.34 EUR |
345+ | 0.21 EUR |
530+ | 0.13 EUR |
622+ | 0.11 EUR |
983+ | 0.073 EUR |
1040+ | 0.069 EUR |
1080+ | 0.066 EUR |
MMBD1404A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1405 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
auf Bestellung 723 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
363+ | 0.2 EUR |
468+ | 0.15 EUR |
516+ | 0.14 EUR |
723+ | 0.099 EUR |
MMBD1405A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N3904BU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 7045 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
481+ | 0.15 EUR |
890+ | 0.08 EUR |
1241+ | 0.058 EUR |
1313+ | 0.054 EUR |
3000+ | 0.052 EUR |
2N3904TFR |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
432+ | 0.17 EUR |
516+ | 0.14 EUR |
777+ | 0.092 EUR |
906+ | 0.079 EUR |
1102+ | 0.065 EUR |
1146+ | 0.063 EUR |
BSS138L |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
215+ | 0.33 EUR |
BSS138LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 43650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
491+ | 0.15 EUR |
610+ | 0.12 EUR |
723+ | 0.099 EUR |
1446+ | 0.049 EUR |
1530+ | 0.047 EUR |
BSS138LT3G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
auf Bestellung 12852 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
363+ | 0.2 EUR |
459+ | 0.16 EUR |
918+ | 0.078 EUR |
1211+ | 0.059 EUR |
1283+ | 0.056 EUR |
2500+ | 0.054 EUR |
BSS138W |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6009 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
363+ | 0.2 EUR |
463+ | 0.15 EUR |
512+ | 0.14 EUR |
827+ | 0.087 EUR |
875+ | 0.082 EUR |
6000+ | 0.079 EUR |
MMBFJ113 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD; SMD
Case: SOT23; SOT23
Gate current: 50mA; 50mA
Drain current: 2mA; 2mA
On-state resistance: 100Ω; 100Ω
Type of transistor: N-JFET; N-JFET
Power dissipation: 0.35W; 0.35W
Polarisation: unipolar; unipolar
Kind of package: reel; tape; reel; tape
Gate-source voltage: -35V; -35V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD; SMD
Case: SOT23; SOT23
Gate current: 50mA; 50mA
Drain current: 2mA; 2mA
On-state resistance: 100Ω; 100Ω
Type of transistor: N-JFET; N-JFET
Power dissipation: 0.35W; 0.35W
Polarisation: unipolar; unipolar
Kind of package: reel; tape; reel; tape
Gate-source voltage: -35V; -35V
auf Bestellung 4678 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
271+ | 0.26 EUR |
325+ | 0.22 EUR |
374+ | 0.19 EUR |
428+ | 0.17 EUR |
589+ | 0.12 EUR |
1000+ | 0.11 EUR |
BYW80-200G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Features of semiconductor devices: ultrafast switching
auf Bestellung 1408 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
75+ | 0.97 EUR |
83+ | 0.87 EUR |
86+ | 0.83 EUR |
88+ | 0.82 EUR |
100+ | 0.79 EUR |
1N4448TR |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
auf Bestellung 9443 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
1389+ | 0.051 EUR |
1880+ | 0.038 EUR |
2184+ | 0.033 EUR |
2476+ | 0.029 EUR |
2841+ | 0.025 EUR |
4348+ | 0.016 EUR |
4630+ | 0.015 EUR |
LM2904DR2G | ![]() |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1MHz
Input offset voltage: 10mV
Kind of package: reel; tape
Slew rate: 0.3V/μs
Input offset current: 45...200nA
Input bias current: 50nA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1MHz
Input offset voltage: 10mV
Kind of package: reel; tape
Slew rate: 0.3V/μs
Input offset current: 45...200nA
Input bias current: 50nA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
auf Bestellung 2472 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
226+ | 0.32 EUR |
242+ | 0.3 EUR |
313+ | 0.23 EUR |
329+ | 0.22 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |
FGH40N60SFDTU |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.88 EUR |
15+ | 5.05 EUR |
21+ | 3.55 EUR |
22+ | 3.36 EUR |
150+ | 3.29 EUR |
FGH40N60SMD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.93 EUR |
17+ | 4.36 EUR |
19+ | 3.78 EUR |
20+ | 3.58 EUR |
FGH40N60UFDTU |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.09 EUR |
17+ | 4.26 EUR |
18+ | 4.03 EUR |
120+ | 4.02 EUR |
FGAF40N60UFDTU |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
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