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MC74LVXT8051DR2G ONSEMI mc74lvxt8051-d.pdf Category: Integrated circuits - Unclassified
Description: MC74LVXT8051DR2G
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.5 EUR
Mindestbestellmenge: 2500
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1N5956BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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FDD3672 FDD3672 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE60BFDFDD5E28&compId=FDD3672.pdf?ci_sign=2f119ab2145af13489fbc2210acb4aeb21f21821 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1540 Stücke:
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45+1.62 EUR
52+1.4 EUR
58+1.24 EUR
100+1.19 EUR
Mindestbestellmenge: 35
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SZESD7104MUTAG ONSEMI esd7104-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
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NCS210RMUTAG ONSEMI ncs210r-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; UQFN10; 200V/V; 0.035mV
Mounting: SMT
Case: UQFN10
Kind of package: reel; tape
Bandwidth: 40kHz
Type of integrated circuit: instrumentation amplifier
Integrated circuit features: rail-to-rail output
Number of channels: single
Operating temperature: -40...125°C
Input offset current: 100nA
Input offset voltage: 35µV
Input bias current: 60µA
Slew rate: 1V/μs
Voltage supply range: 2.2...26V DC
Gain: 200V/V
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NB3L553DG NB3L553DG ONSEMI nb3l553-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 6V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 1
Number of outputs: 4
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NB6N11SMNG NB6N11SMNG ONSEMI nb6n11s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3.8V DC
Operating temperature: -40...85°C
Kind of package: tube
Technology: CMOS; TTL
Number of channels: 1
Number of outputs: 2
Produkt ist nicht verfügbar
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MC100EP11DR2G MC100EP11DR2G ONSEMI mc10ep11-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 2
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MC100EP11DTR2G MC100EP11DTR2G ONSEMI mc10ep11-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Case: TSSOP8
Mounting: SMD
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 2
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MC100LVEP11DR2G MC100LVEP11DR2G ONSEMI mc10lvep11-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 2.375÷3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 2.375...3.8V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 2
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NB3L553MNR4G NB3L553MNR4G ONSEMI 0900766b8125d51f.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: DFN8
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 4
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NB3N551DR2G NB3N551DR2G ONSEMI nb3n551-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Number of outputs: 4
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NB3RL02FCT2G ONSEMI nb3rl02-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 2; 2.3÷5.5VDC; SMD; WLCSP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: WLCSP8
Mounting: SMD
Supply voltage: 2.3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Number of outputs: 2
Produkt ist nicht verfügbar
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NB6L11SMNG ONSEMI nb6l11s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 2; CMOS,LVDS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3.8V DC
Operating temperature: -40...85°C
Kind of package: tube
Technology: CMOS; LVDS; TTL
Number of channels: 2
Number of outputs: 2
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NB6N11SMNR2G ONSEMI nb6n11s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3.8V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS; TTL
Number of channels: 1
Number of outputs: 2
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NB6N14SMNR2G ONSEMI nb6n14s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; 3÷3.6VDC; SMD; QFN16
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Number of channels: 1
Number of outputs: 4
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MMBTA05LT1G MMBTA05LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE996BEFD3DD28078BF&compId=MMBTA05L_06L.pdf?ci_sign=2bae7ffe7ac3cc2b64ecbbd79ef74816a5ffaafb description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
650+0.11 EUR
958+0.075 EUR
1134+0.063 EUR
1645+0.043 EUR
1902+0.038 EUR
2084+0.034 EUR
3000+0.03 EUR
Mindestbestellmenge: 455
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MC74LVXT4052DTG MC74LVXT4052DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6328A471640D3&compId=MC74LVXT4052-D.pdf?ci_sign=97daef0d8eb3d9866e59164d45c1258abf99a7e6 Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: LVXT
Family: LVXT
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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MC74LVXT4052DTRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6328A471780D3&compId=MC74LVXT4052-D.pdf?ci_sign=ce8fe2705b952155e1c8d3d6c7adf5bda4907c7f Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: LVXT
Family: LVXT
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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MMBZ5245BLT1G MMBZ5245BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
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SZMMBZ5245BLT1G SZMMBZ5245BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Application: automotive industry
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MUN5135DW1T1G MUN5135DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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NSVMUN5135DW1T1G ONSEMI dta123jd-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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DTA143ZM3T5G ONSEMI dta143z-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
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NSVDTA143ZET1G ONSEMI dta143z-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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NLU1GT50AMX1TCG ONSEMI nlu1gt50-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Technology: CMOS; TTL
Type of integrated circuit: digital
Mounting: SMD
Quiescent current: 40µA
Produkt ist nicht verfügbar
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MC74HC1G32DFT2G-L22038 ONSEMI mc74hc1g32-d.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; HC
Mounting: SMD
Case: SC70-5
Family: HC
Kind of gate: OR
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of channels: 1
Number of outputs: 1
Number of inputs: 2
Technology: CMOS
Type of integrated circuit: digital
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3000+0.057 EUR
Mindestbestellmenge: 3000
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NL17SZ00DFT2G-L22038 ONSEMI nl17sz00-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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M74VHC1GT08DFT1G-L22038 ONSEMI mc74vhc1g08-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
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Mindestbestellmenge: 3000
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MC74HC1G04DFT1G-L22038 ONSEMI mc74hc1g04-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
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Mindestbestellmenge: 3000
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HUF75639S3ST HUF75639S3ST ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E8EF86412D5EA&compId=HUF75639S3ST.pdf?ci_sign=b0b30c304ec406a4bae63adb3260faf049a9f397 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 756 Stücke:
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30+2.45 EUR
50+1.9 EUR
100+1.79 EUR
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HUF75639P3 HUF75639P3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E878CD29235EA&compId=HUF75639P3.pdf?ci_sign=7e9ce06467832523d29c425b382a9e3100f1f202 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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33+2.17 EUR
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HUF75639G3 ONSEMI huf75639g3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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HUF75639S3 ONSEMI huf75639g3-d.pdf HRISS01168-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO262AA
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
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NC7SZ34UCX ONSEMI nc7sz34-d.pdf ONSM-S-A0003590664-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Mounting: SMD
Type of integrated circuit: digital
Case: WLCSP4
Operating temperature: -40...85°C
Quiescent current: 10µA
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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NCV21801SN2T1G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Operating temperature: -40...150°C
Mounting: SMT
Case: SOT23-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
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NCV21801SQ3T2G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: SC70-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
Produkt ist nicht verfügbar
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NCV21802DMR2G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; Micro8; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: Micro8
Type of integrated circuit: operational amplifier
Integrated circuit features: zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: dual
Produkt ist nicht verfügbar
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MC100EP52DG MC100EP52DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEED8A2DF694469&compId=MC100EP52DG.PDF?ci_sign=4aa41003093e3389c342e5f057d25ef1289a599b Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.57 EUR
25+9.5 EUR
Mindestbestellmenge: 7
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MC100EP05DG MC100EP05DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEEC96DE2B1A469&compId=MC100EP05DG.PDF?ci_sign=cbc4cbfc671ed87946b57ce79d0c0c3e51416e72 Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Type of integrated circuit: digital
Number of channels: single; 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Number of inputs: 4
Kind of gate: AND; multiple-function; NAND
auf Bestellung 94 Stücke:
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8+9.51 EUR
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MC100EP52DTG MC100EP52DTG ONSEMI mc10ep52-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3.3...5V DC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.77 EUR
10+8.74 EUR
Mindestbestellmenge: 9
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NDP6060L NDP6060L ONSEMI pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
23+3.16 EUR
50+2.93 EUR
Mindestbestellmenge: 21
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MBR1080G MBR1080G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.85V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 80V
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
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FAN6605MX FAN6605MX ONSEMI fan6605-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 65kHz; SOP7; flyback; 0÷90%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Frequency: 65kHz
Case: SOP7
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Duty cycle factor: 0...90%
Kind of package: reel; tape
Operating voltage: 11...24V DC
Produkt ist nicht verfügbar
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BD239CTU BD239CTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD93DB4214ABDF80D3&compId=BD239x.pdf?ci_sign=2b255cd84aa1d429c5df5a3b374a6dc10198953e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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2N6287 2N6287 ONSEMI 2N6286-2N6287-LDS-0309-MIL-PRF-19500-505.pdf 2N6284%2C%202N6287.pdf Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
Produkt ist nicht verfügbar
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FDD9409-F085 ONSEMI fdd9409_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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FOD8342 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DA140C7&compId=FOD8342.pdf?ci_sign=bb8fcdbf407d51cc189d18de6b6fcdec095a9c77 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
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FOD8342R2 ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2 ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2V ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
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1N5386BG 1N5386BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
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1N5386BRLG 1N5386BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
Produkt ist nicht verfügbar
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FDS5670 FDS5670 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9DE96E8BEA259&compId=FDS5670.pdf?ci_sign=4bf2c66031aeb831fd2322b7c6cbdab35e3da19f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.66 EUR
33+2.17 EUR
38+1.93 EUR
50+1.44 EUR
100+1.34 EUR
Mindestbestellmenge: 27
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FQS4901TF FQS4901TF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781968E47C25D8259&compId=FQS4901.pdf?ci_sign=a8e4e4608676641153ccf58002efb0417932c879 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Mounting: SMD
Technology: QFET®
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Gate charge: 7.5nC
Power dissipation: 2W
On-state resistance: 4.2Ω
Gate-source voltage: ±25V
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2N4403BU 2N4403BU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDABC9A68E070DD40C7&compId=2N4403.pdf?ci_sign=8dd87c78206681ad6380762a8b4484e2528541bb Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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FGY60T120SQDN ONSEMI fgy60t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±25V
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 311nC
Power dissipation: 259W
Produkt ist nicht verfügbar
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NTBG020N090SC1 ONSEMI ntbg020n090sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG020N090SC1 ONSEMI nvbg020n090sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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FSL106MR FSL106MR ONSEMI fsl106mr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 500mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Duty cycle factor: 71...83%
Power: 8W
Application: SMPS
Operating voltage: 8...24V DC
Produkt ist nicht verfügbar
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MC74LVXT8051DR2G mc74lvxt8051-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - Unclassified
Description: MC74LVXT8051DR2G
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.5 EUR
Mindestbestellmenge: 2500
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1N5956BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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FDD3672 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE60BFDFDD5E28&compId=FDD3672.pdf?ci_sign=2f119ab2145af13489fbc2210acb4aeb21f21821
FDD3672
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
45+1.62 EUR
52+1.4 EUR
58+1.24 EUR
100+1.19 EUR
Mindestbestellmenge: 35
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SZESD7104MUTAG esd7104-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCS210RMUTAG ncs210r-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; UQFN10; 200V/V; 0.035mV
Mounting: SMT
Case: UQFN10
Kind of package: reel; tape
Bandwidth: 40kHz
Type of integrated circuit: instrumentation amplifier
Integrated circuit features: rail-to-rail output
Number of channels: single
Operating temperature: -40...125°C
Input offset current: 100nA
Input offset voltage: 35µV
Input bias current: 60µA
Slew rate: 1V/μs
Voltage supply range: 2.2...26V DC
Gain: 200V/V
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NB3L553DG nb3l553-d.pdf
NB3L553DG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 6V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 1
Number of outputs: 4
Produkt ist nicht verfügbar
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NB6N11SMNG nb6n11s-d.pdf
NB6N11SMNG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3.8V DC
Operating temperature: -40...85°C
Kind of package: tube
Technology: CMOS; TTL
Number of channels: 1
Number of outputs: 2
Produkt ist nicht verfügbar
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MC100EP11DR2G mc10ep11-d.pdf
MC100EP11DR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 2
Produkt ist nicht verfügbar
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MC100EP11DTR2G mc10ep11-d.pdf
MC100EP11DTR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Case: TSSOP8
Mounting: SMD
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 2
Produkt ist nicht verfügbar
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MC100LVEP11DR2G mc10lvep11-d.pdf
MC100LVEP11DR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 2.375÷3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 2.375...3.8V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 2
Produkt ist nicht verfügbar
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NB3L553MNR4G 0900766b8125d51f.pdf
NB3L553MNR4G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: DFN8
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Number of outputs: 4
Produkt ist nicht verfügbar
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NB3N551DR2G nb3n551-d.pdf
NB3N551DR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Number of outputs: 4
Produkt ist nicht verfügbar
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NB3RL02FCT2G nb3rl02-d.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 2; 2.3÷5.5VDC; SMD; WLCSP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: WLCSP8
Mounting: SMD
Supply voltage: 2.3...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Number of outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NB6L11SMNG nb6l11s-d.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 2; CMOS,LVDS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3.8V DC
Operating temperature: -40...85°C
Kind of package: tube
Technology: CMOS; LVDS; TTL
Number of channels: 2
Number of outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NB6N11SMNR2G nb6n11s-d.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3.8V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS; TTL
Number of channels: 1
Number of outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NB6N14SMNR2G nb6n14s-d.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; 3÷3.6VDC; SMD; QFN16
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Case: QFN16
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Number of channels: 1
Number of outputs: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA05LT1G description pVersion=0046&contRep=ZT&docId=005056AB82531EE996BEFD3DD28078BF&compId=MMBTA05L_06L.pdf?ci_sign=2bae7ffe7ac3cc2b64ecbbd79ef74816a5ffaafb
MMBTA05LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
650+0.11 EUR
958+0.075 EUR
1134+0.063 EUR
1645+0.043 EUR
1902+0.038 EUR
2084+0.034 EUR
3000+0.03 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MC74LVXT4052DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6328A471640D3&compId=MC74LVXT4052-D.pdf?ci_sign=97daef0d8eb3d9866e59164d45c1258abf99a7e6
MC74LVXT4052DTG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: LVXT
Family: LVXT
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LVXT4052DTRG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6328A471780D3&compId=MC74LVXT4052-D.pdf?ci_sign=ce8fe2705b952155e1c8d3d6c7adf5bda4907c7f
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: LVXT
Family: LVXT
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5245BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5245BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5245BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
SZMMBZ5245BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Application: automotive industry
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN5135DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4
MUN5135DW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5135DW1T1G dta123jd-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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DTA143ZM3T5G dta143z-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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NSVDTA143ZET1G dta143z-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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NLU1GT50AMX1TCG nlu1gt50-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Technology: CMOS; TTL
Type of integrated circuit: digital
Mounting: SMD
Quiescent current: 40µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G32DFT2G-L22038 mc74hc1g32-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; HC
Mounting: SMD
Case: SC70-5
Family: HC
Kind of gate: OR
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of channels: 1
Number of outputs: 1
Number of inputs: 2
Technology: CMOS
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.057 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NL17SZ00DFT2G-L22038 nl17sz00-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.055 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
M74VHC1GT08DFT1G-L22038 mc74vhc1g08-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.052 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G04DFT1G-L22038 mc74hc1g04-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.048 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
HUF75639S3ST pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E8EF86412D5EA&compId=HUF75639S3ST.pdf?ci_sign=b0b30c304ec406a4bae63adb3260faf049a9f397
HUF75639S3ST
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 756 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
30+2.45 EUR
50+1.9 EUR
100+1.79 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
HUF75639P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E878CD29235EA&compId=HUF75639P3.pdf?ci_sign=7e9ce06467832523d29c425b382a9e3100f1f202
HUF75639P3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
33+2.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
HUF75639G3 huf75639g3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUF75639S3 huf75639g3-d.pdf HRISS01168-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO262AA
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NC7SZ34UCX nc7sz34-d.pdf ONSM-S-A0003590664-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Mounting: SMD
Type of integrated circuit: digital
Case: WLCSP4
Operating temperature: -40...85°C
Quiescent current: 10µA
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV21801SN2T1G ncs21801-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Operating temperature: -40...150°C
Mounting: SMT
Case: SOT23-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
Produkt ist nicht verfügbar
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NCV21801SQ3T2G ncs21801-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: SC70-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
Produkt ist nicht verfügbar
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NCV21802DMR2G ncs21801-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; Micro8; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: Micro8
Type of integrated circuit: operational amplifier
Integrated circuit features: zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: dual
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC100EP52DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEED8A2DF694469&compId=MC100EP52DG.PDF?ci_sign=4aa41003093e3389c342e5f057d25ef1289a599b
MC100EP52DG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.57 EUR
25+9.5 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MC100EP05DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEEC96DE2B1A469&compId=MC100EP05DG.PDF?ci_sign=cbc4cbfc671ed87946b57ce79d0c0c3e51416e72
MC100EP05DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Type of integrated circuit: digital
Number of channels: single; 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Number of inputs: 4
Kind of gate: AND; multiple-function; NAND
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.51 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MC100EP52DTG mc10ep52-d.pdf
MC100EP52DTG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3.3...5V DC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.77 EUR
10+8.74 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NDP6060L pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74
NDP6060L
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
23+3.16 EUR
50+2.93 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
MBR1080G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7
MBR1080G
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.85V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 80V
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Produkt ist nicht verfügbar
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FAN6605MX fan6605-d.pdf
FAN6605MX
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 65kHz; SOP7; flyback; 0÷90%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Frequency: 65kHz
Case: SOP7
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Duty cycle factor: 0...90%
Kind of package: reel; tape
Operating voltage: 11...24V DC
Produkt ist nicht verfügbar
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BD239CTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDD93DB4214ABDF80D3&compId=BD239x.pdf?ci_sign=2b255cd84aa1d429c5df5a3b374a6dc10198953e
BD239CTU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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2N6287 2N6286-2N6287-LDS-0309-MIL-PRF-19500-505.pdf 2N6284%2C%202N6287.pdf
2N6287
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
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FDD9409-F085 fdd9409_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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FOD8342 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DA140C7&compId=FOD8342.pdf?ci_sign=bb8fcdbf407d51cc189d18de6b6fcdec095a9c77
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
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FOD8342R2 fod8342-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2 fod8342-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2V fod8342-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
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1N5386BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5386BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
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1N5386BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5386BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
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FDS5670 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9DE96E8BEA259&compId=FDS5670.pdf?ci_sign=4bf2c66031aeb831fd2322b7c6cbdab35e3da19f
FDS5670
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
33+2.17 EUR
38+1.93 EUR
50+1.44 EUR
100+1.34 EUR
Mindestbestellmenge: 27
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FQS4901TF pVersion=0046&contRep=ZT&docId=005056AB752F1ED781968E47C25D8259&compId=FQS4901.pdf?ci_sign=a8e4e4608676641153ccf58002efb0417932c879
FQS4901TF
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Mounting: SMD
Technology: QFET®
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Gate charge: 7.5nC
Power dissipation: 2W
On-state resistance: 4.2Ω
Gate-source voltage: ±25V
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
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2N4403BU pVersion=0046&contRep=ZT&docId=005056AB90B41EDABC9A68E070DD40C7&compId=2N4403.pdf?ci_sign=8dd87c78206681ad6380762a8b4484e2528541bb
2N4403BU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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FGY60T120SQDN fgy60t120sqdn-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±25V
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 311nC
Power dissipation: 259W
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NTBG020N090SC1 ntbg020n090sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG020N090SC1 nvbg020n090sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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FSL106MR fsl106mr-d.pdf
FSL106MR
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 500mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Duty cycle factor: 71...83%
Power: 8W
Application: SMPS
Operating voltage: 8...24V DC
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