| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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2SC6097-TL-E | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Collector current: 3A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 300...600 Frequency: 390MHz Polarisation: bipolar Type of transistor: NPN |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3646S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Mounting: SMD Case: SOT89 Kind of package: reel; tape Collector current: 1A Power dissipation: 0.5W Collector-emitter voltage: 100V Current gain: 140...280 Frequency: 120MHz Polarisation: bipolar Type of transistor: NPN |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC14549BDWR2G | ONSEMI |
Category: Shift registers Description: IC: digital; register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: register Number of channels: 1 Technology: CMOS Mounting: SMD Case: SO16WB Family: HEF4000B Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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QSD123 | ONSEMI |
Category: Phototransistors Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24° LED lens: black with IR filter Mounting: THT Type of photoelement: phototransistor Wavelength of peak sensitivity: 880nm LED diameter: 5mm Viewing angle: 24° Collector-emitter voltage: 30V |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848BLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVBC848BWT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MBRA160T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.475V Max. load current: 2.1A Kind of package: reel; tape |
auf Bestellung 4493 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPZT2222AT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: tape Frequency: 300MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBZ18VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Leakage current: 50nA Number of channels: 2 Tolerance: ±5% Max. forward impulse current: 1.6A Max. off-state voltage: 14.5V Breakdown voltage: 18V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Case: SOT23 Version: ESD |
auf Bestellung 5645 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZMMBZ18VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2 Application: automotive industry Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Max. forward impulse current: 1.6A Max. off-state voltage: 14.5V Breakdown voltage: 18V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Case: SOT23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
LM2902N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV Type of integrated circuit: operational amplifier Number of channels: quad; 4 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP14 Input offset voltage: 10mV Kind of package: tube Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FDLL4448 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 1528 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS5C638NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A Power dissipation: 50W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 40.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFS5C638NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A Power dissipation: 50W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 40.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDB0165N807L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7 Case: D2PAK-7 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 217nC On-state resistance: 1.6mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 310A Power dissipation: 300W Pulsed drain current: 1780A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MC74HC10ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Family: HC Kind of package: reel; tape Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.5A Power dissipation: 0.73W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTR4502PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC6097-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 71+ | 1.01 EUR |
| 117+ | 0.61 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.46 EUR |
| 700+ | 0.43 EUR |
| 2SC3646S-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 147+ | 0.49 EUR |
| 204+ | 0.35 EUR |
| 500+ | 0.29 EUR |
| MC14549BDWR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| QSD123 |
|
Hersteller: ONSEMI
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
LED lens: black with IR filter
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 24°
Collector-emitter voltage: 30V
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
LED lens: black with IR filter
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 24°
Collector-emitter voltage: 30V
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 200+ | 0.36 EUR |
| 266+ | 0.27 EUR |
| 307+ | 0.23 EUR |
| BC848BLT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBC848BWT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRA160T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. load current: 2.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. load current: 2.1A
Kind of package: reel; tape
auf Bestellung 4493 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 272+ | 0.26 EUR |
| 300+ | 0.24 EUR |
| 368+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 506+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.11 EUR |
| SPZT2222AT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ18VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Version: ESD
auf Bestellung 5645 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1064+ | 0.067 EUR |
| 1573+ | 0.045 EUR |
| 1839+ | 0.039 EUR |
| 2213+ | 0.032 EUR |
| 2500+ | 0.029 EUR |
| 2778+ | 0.026 EUR |
| 3000+ | 0.025 EUR |
| SZMMBZ18VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2902N |
|
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDLL4448 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 1528 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 962+ | 0.074 EUR |
| 1064+ | 0.067 EUR |
| 1484+ | 0.048 EUR |
| 1528+ | 0.047 EUR |
| NVMFS5C638NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C638NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB0165N807L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7
Case: D2PAK-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 217nC
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 310A
Power dissipation: 300W
Pulsed drain current: 1780A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7
Case: D2PAK-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 217nC
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 310A
Power dissipation: 300W
Pulsed drain current: 1780A
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| MC74HC10ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
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| NVTR4503NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.5A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.5A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| NVTR4502PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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