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FDP075N15A-F102 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Mounting: THT Type of transistor: N-MOSFET Technology: PowerTrench® Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 0.1µC On-state resistance: 7.5mΩ Gate-source voltage: ±20V Drain current: 92A Drain-source voltage: 150V Power dissipation: 333W Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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SBCP56T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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| FSV12150V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 150V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 150V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 220A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FSV10100V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.67V Max. forward impulse current: 180A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FSV10150V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 150V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.84V Max. forward impulse current: 180A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGY100T65SCDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Type of transistor: IGBT Case: TO247-3 Gate charge: 157nC Power dissipation: 375W Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Collector-emitter voltage: 650V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N4740A-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 10V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
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| NCP3284AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck Operating temperature: -40...125°C Type of integrated circuit: PMIC Output voltage: 0.8...5.5V Number of channels: 1 Input voltage: 4.5...18V Output current: 35A Frequency: 0.5...1MHz Topology: buck Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP3284MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck Operating temperature: -40...125°C Type of integrated circuit: PMIC Output voltage: 0.8...5.5V Number of channels: 1 Input voltage: 4.5...18V Output current: 30A Frequency: 0.5...1MHz Topology: buck Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMTS1D2N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 147nC On-state resistance: 1.1mΩ Drain-source voltage: 80V Drain current: 337A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMTS1D2N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 147nC On-state resistance: 1.1mΩ Drain-source voltage: 80V Drain current: 335A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMTS1D5N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 125nC On-state resistance: 1.5mΩ Drain-source voltage: 80V Drain current: 255A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMTS1D6N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 146W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 106nC On-state resistance: 1.7mΩ Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMTS1D5N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 129W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 125nC On-state resistance: 1.4mΩ Drain-source voltage: 80V Drain current: 273A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMTS1D6N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 146W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 106nC On-state resistance: 1.7mΩ Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP152MX280120TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6 Mounting: SMD Tolerance: ±2% Operating temperature: -40...85°C Manufacturer series: NCP152 Kind of voltage regulator: fixed; LDO; linear Case: XDFN6 Type of integrated circuit: voltage regulator Output current: 0.15A Number of channels: 2 Output voltage: 1.2V; 2.8V Input voltage: 1.9...5.25V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDH333 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1.15V Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.2A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 1A Case: DO35 Power dissipation: 0.5W Leakage current: 0.5µA Max. forward voltage: 1.15V Max. load current: 0.6A Capacitance: 6pF |
auf Bestellung 2714 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDH333TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; reel,tape; Ifsm: 4A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDMC86324 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Case: PQFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 18nC On-state resistance: 40mΩ Drain current: 20A Gate-source voltage: ±20V Power dissipation: 41W Drain-source voltage: 80V Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MURA120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 1724 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ22T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
auf Bestellung 13985 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP68T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 968 Stücke: Lieferzeit 14-21 Tag (e) |
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SBCP68T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 50...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVBCP68T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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RURG3060-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 90A Case: TO247-2 Reverse recovery time: 80ns Application: automotive industry |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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RURG3060 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 325A Case: TO247-2 Reverse recovery time: 60ns Max. load current: 70A Max. forward voltage: 1.5V Power dissipation: 125W Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
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NCV7430D20R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; Ch: 3 Application: automotive industry; for LED applications Kind of integrated circuit: transceiver Case: SO14 Type of integrated circuit: interface Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 3 Supply voltage: 5.5...18V DC Interface: LIN |
Produkt ist nicht verfügbar |
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| H11L2SR2M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 4.17kV Transfer rate: 1Mbps Case: PDIP6 Turn-on time: 1µs Turn-off time: 1.2µs Max. off-state voltage: 6V Output voltage: 0...16V Manufacturer series: H11L2 |
Produkt ist nicht verfügbar |
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MMBZ5223BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA Case: SOT23 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Leakage current: 75µA Tolerance: ±5% Power dissipation: 0.3W Zener voltage: 2.7V Manufacturer series: MMBZ52xxBLT1G |
Produkt ist nicht verfügbar |
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| NUF2230XV6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape Case: SOT563 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Semiconductor structure: bidirectional Type of diode: TVS array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBR160RLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 1V Max. forward impulse current: 25A Kind of package: reel; tape |
auf Bestellung 1932 Stücke: Lieferzeit 14-21 Tag (e) |
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| HCPL3700M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP8; 4kV/μs Mounting: THT Number of channels: 1 Case: DIP8 Slew rate: 4kV/μs Turn-on time: 45µs Output voltage: -0.5...20V Insulation voltage: 5kV Kind of output: Darlington Type of optocoupler: optocoupler Turn-off time: 0.5µs |
Produkt ist nicht verfügbar |
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M74VHC1GT08DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of package: reel; tape Case: SC88A Number of channels: single; 1 Mounting: SMD Family: VHC Operating temperature: -55...125°C Number of inputs: 2 Kind of gate: AND Supply voltage: 2...5.5V DC Technology: TTL |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74VHC1GT08DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; VHC Type of integrated circuit: digital Case: SC70-5 Number of channels: 1 Mounting: SMD Family: VHC Operating temperature: -55...125°C Quiescent current: 1µA Number of outputs: 1 Number of inputs: 2 Kind of gate: AND Technology: CMOS |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS3580 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement Gate charge: 34nC On-state resistance: 29mΩ Power dissipation: 2.5W Drain current: 7.6A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
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MOC3011SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs Manufacturer series: MOC301XM Mounting: SMD Trigger current: 5mA Type of optocoupler: optotriac Number of channels: 1 Max. off-state voltage: 3V Case: PDIP6 Kind of output: triac; without zero voltage crossing driver Slew rate: 1kV/μs Insulation voltage: 4.17kV Output voltage: 250V |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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| S3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.15V Kind of package: reel; tape Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
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| NRVS3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 80A Kind of package: reel; tape Reverse recovery time: 1.5µs Application: automotive industry |
Produkt ist nicht verfügbar |
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| MUR220G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
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| MUR220RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDH3632 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; TO247 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 310W Case: TO247 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FSUSB63UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T Mounting: SMD Case: UMLP12 Number of channels: 2 Supply voltage: 2.7...4.4V DC Type of integrated circuit: analog switch Kind of output: DP3T Kind of integrated circuit: multiplexer; USB switch Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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FDN359AN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Gate charge: 7nC Features of semiconductor devices: logic level |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDN359BN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FSV1045V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.39V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SBRB1045G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.84V Max. forward impulse current: 150A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SBRB1045T4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.84V Max. forward impulse current: 150A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NLAS1053USG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC Operating temperature: -55...125°C Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Kind of package: reel; tape Mounting: SMD Kind of output: SPST-NO Case: US8 Type of integrated circuit: analog switch Quiescent current: 2µA Number of channels: 1 Supply voltage: 2...5.5V DC |
Produkt ist nicht verfügbar |
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74LCX08M | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| 74LCX08BQX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: QFN14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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74LCX08MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74LCX08DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Integrated circuit features: tolerates a voltage of 5V on the inputs Manufacturer series: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MC74LCX08DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| WMBUS-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board Interface: M-Bus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
FOD2741B | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Type of optocoupler: optocoupler Kind of output: transistor Number of channels: 1 CTR@If: 100-200%@10mA Case: DIP8 Insulation voltage: 5kV Mounting: THT |
auf Bestellung 597 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD2741A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Type of optocoupler: optocoupler Kind of output: transistor Number of channels: 1 CTR@If: 100-200%@10mA Case: DIP8 Insulation voltage: 5kV Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FOD2741BS | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS16T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMC6675BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: WDFN8 Pulsed drain current: -32A Drain-source voltage: -30V Drain current: -20A Gate charge: 65nC On-state resistance: 27mΩ Power dissipation: 36W Gate-source voltage: ±25V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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|
BC858CLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDP075N15A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 92A
Drain-source voltage: 150V
Power dissipation: 333W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 92A
Drain-source voltage: 150V
Power dissipation: 333W
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.13 EUR |
| 20+ | 3.72 EUR |
| SBCP56T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV12150V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 220A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 220A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV10100V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV10150V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY100T65SCDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4740A-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP3284AMNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 35A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 35A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP3284MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 30A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 30A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTS1D2N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS1D2N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS1D5N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS1D6N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTS1D5N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTS1D6N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP152MX280120TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Output voltage: 1.2V; 2.8V
Input voltage: 1.9...5.25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Output voltage: 1.2V; 2.8V
Input voltage: 1.9...5.25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDH333 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 1A
Case: DO35
Power dissipation: 0.5W
Leakage current: 0.5µA
Max. forward voltage: 1.15V
Max. load current: 0.6A
Capacitance: 6pF
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 1A
Case: DO35
Power dissipation: 0.5W
Leakage current: 0.5µA
Max. forward voltage: 1.15V
Max. load current: 0.6A
Capacitance: 6pF
auf Bestellung 2714 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 538+ | 0.13 EUR |
| 758+ | 0.094 EUR |
| 872+ | 0.082 EUR |
| 968+ | 0.074 EUR |
| 1078+ | 0.066 EUR |
| FDH333TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86324 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MURA120T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 1724 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 244+ | 0.29 EUR |
| 321+ | 0.22 EUR |
| 360+ | 0.2 EUR |
| 417+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| MMSZ22T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 13985 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 758+ | 0.094 EUR |
| 848+ | 0.084 EUR |
| 1309+ | 0.055 EUR |
| 1629+ | 0.044 EUR |
| 2428+ | 0.029 EUR |
| 2703+ | 0.026 EUR |
| 2825+ | 0.025 EUR |
| BCP68T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 178+ | 0.4 EUR |
| 216+ | 0.33 EUR |
| 288+ | 0.25 EUR |
| 500+ | 0.18 EUR |
| SBCP68T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBCP68T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RURG3060-F085 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.42 EUR |
| 18+ | 4.03 EUR |
| 23+ | 3.19 EUR |
| 30+ | 3.12 EUR |
| RURG3060 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV7430D20R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; Ch: 3
Application: automotive industry; for LED applications
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: interface
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 3
Supply voltage: 5.5...18V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; Ch: 3
Application: automotive industry; for LED applications
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: interface
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 3
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11L2SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ5223BLT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 75µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 2.7V
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 75µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 2.7V
Manufacturer series: MMBZ52xxBLT1G
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF2230XV6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: bidirectional
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: bidirectional
Type of diode: TVS array
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR160RLG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 295+ | 0.24 EUR |
| 327+ | 0.22 EUR |
| 443+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| HCPL3700M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP8; 4kV/μs
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 4kV/μs
Turn-on time: 45µs
Output voltage: -0.5...20V
Insulation voltage: 5kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-off time: 0.5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP8; 4kV/μs
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 4kV/μs
Turn-on time: 45µs
Output voltage: -0.5...20V
Insulation voltage: 5kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-off time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M74VHC1GT08DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...5.5V DC
Technology: TTL
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...5.5V DC
Technology: TTL
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MC74VHC1GT08DFT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; VHC
Type of integrated circuit: digital
Case: SC70-5
Number of channels: 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of outputs: 1
Number of inputs: 2
Kind of gate: AND
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; VHC
Type of integrated circuit: digital
Case: SC70-5
Number of channels: 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of outputs: 1
Number of inputs: 2
Kind of gate: AND
Technology: CMOS
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.037 EUR |
| FDS3580 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 34nC
On-state resistance: 29mΩ
Power dissipation: 2.5W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 34nC
On-state resistance: 29mΩ
Power dissipation: 2.5W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3011SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Mounting: SMD
Trigger current: 5mA
Type of optocoupler: optotriac
Number of channels: 1
Max. off-state voltage: 3V
Case: PDIP6
Kind of output: triac; without zero voltage crossing driver
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Mounting: SMD
Trigger current: 5mA
Type of optocoupler: optotriac
Number of channels: 1
Max. off-state voltage: 3V
Case: PDIP6
Kind of output: triac; without zero voltage crossing driver
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Output voltage: 250V
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 116+ | 0.62 EUR |
| 148+ | 0.49 EUR |
| 500+ | 0.4 EUR |
| S3MB |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVS3MB |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR220G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR220RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDH3632 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB63UMX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Mounting: SMD
Case: UMLP12
Number of channels: 2
Supply voltage: 2.7...4.4V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
Kind of integrated circuit: multiplexer; USB switch
Operating temperature: -40...85°C
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Mounting: SMD
Case: UMLP12
Number of channels: 2
Supply voltage: 2.7...4.4V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
Kind of integrated circuit: multiplexer; USB switch
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN359AN |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 149+ | 0.48 EUR |
| 197+ | 0.36 EUR |
| 224+ | 0.32 EUR |
| FDN359BN |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FSV1045V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SBRB1045G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
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| SBRB1045T4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NLAS1053USG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPST-NO
Case: US8
Type of integrated circuit: analog switch
Quiescent current: 2µA
Number of channels: 1
Supply voltage: 2...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPST-NO
Case: US8
Type of integrated circuit: analog switch
Quiescent current: 2µA
Number of channels: 1
Supply voltage: 2...5.5V DC
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| 74LCX08M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
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| 74LCX08BQX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX08MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
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| MC74LCX08DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC74LCX08DTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
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| WMBUS-GEVB |
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Interface: M-Bus
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Interface: M-Bus
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FOD2741B |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
auf Bestellung 597 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| 136+ | 0.53 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.5 EUR |
| FOD2741A |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD2741BS |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 1.06 EUR |
| SS16T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC6675BZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
Produkt ist nicht verfügbar
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| BC858CLT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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