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NVMFWS016N06CT1G onsemi


nvmfs016n06c-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 16500 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.99 EUR
3000+0.92 EUR
4500+0.91 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFWS016N06CT1G onsemi

Description: MOSFET N-CH 60V 10A/33A 5DFN, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 25µA, Power Dissipation (Max): 3.4W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.

Weitere Produktangebote NVMFWS016N06CT1G nach Preis ab 1.17 EUR bis 3.38 EUR

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NVMFWS016N06CT1G NVMFWS016N06CT1G onsemi nvmfs016n06c-d.pdf Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.16 EUR
100+1.46 EUR
500+1.17 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS016N06CT1G nvmfs016n06c-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.38 EUR
10+2.16 EUR
100+1.46 EUR
500+1.17 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH