NTMTS1D5N08H onsemi
Hersteller: onsemiDescription: T8-80V IN PQFN88 FOR INDU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 4.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V
auf Bestellung 2878 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.38 EUR |
| 10+ | 6.28 EUR |
| 100+ | 4.53 EUR |
| 500+ | 4.48 EUR |
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Technische Details NTMTS1D5N08H onsemi
Description: T8-80V IN PQFN88 FOR INDU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V, Power Dissipation (Max): 4.2W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V.
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Description: T8-80V IN PQFN88 FOR INDU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V Power Dissipation (Max): 4.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V |
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