Technische Details NTMTS1D5N08H ONN
Description: T8-80V IN PQFN88 FOR INDU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V, Power Dissipation (Max): 4.2W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V.
Weitere Produktangebote NTMTS1D5N08H
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NTMTS1D5N08H | onsemi |
 Description: T8-80V IN PQFN88 FOR INDUPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V Power Dissipation (Max): 4.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NTMTS1D5N08H | onsemi |
Description: T8-80V IN PQFN88 FOR INDU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V Power Dissipation (Max): 4.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMTS1D5N08H | onsemi |
MOSFET T8-80V IN PQFN88 FOR INDUSTRIAL MARKET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTMTS1D5N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 900A Gate charge: 125nC Drain current: 255A Kind of channel: enhancement Drain-source voltage: 80V Gate-source voltage: ±20V On-state resistance: 1.5mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTMTS1D5N08H |
|
Hersteller: onsemi
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 4.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 4.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS1D5N08H |
|
Hersteller: onsemi
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 4.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 4.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS1D5N08H |
|
Hersteller: onsemi
MOSFET T8-80V IN PQFN88 FOR INDUSTRIAL MARKET
MOSFET T8-80V IN PQFN88 FOR INDUSTRIAL MARKET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS1D5N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 900A
Gate charge: 125nC
Drain current: 255A
Kind of channel: enhancement
Drain-source voltage: 80V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 900A
Gate charge: 125nC
Drain current: 255A
Kind of channel: enhancement
Drain-source voltage: 80V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH