| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVG800A75L4DSB2 | onsemi |
Description: MODULEPackaging: Bulk Package / Case: 15-PowerDIP Module (2.827", 71.80mm) Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A NTC Thermistor: No Supplier Device Package: AHPM15-CEC Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 43000 pF @ 30 V |
Produkt ist nicht verfügbar |
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LM7918CT | onsemi |
Description: IC REG LIN -18V 1A TO220 POWERPackaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Output Configuration: Negative Current - Quiescent (Iq): 6 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-220, Power Voltage - Output (Min/Fixed): -18V PSRR: 60dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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LM7918CT | onsemi |
Description: IC REG LINEAR -18V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Current - Quiescent (Iq): 6 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): -18V PSRR: 60dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
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NVMYS016N10MCLTWG | onsemi |
Description: PTNG 100V LL LFPAK4Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 3V @ 64µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS5D1N06HLTAG | onsemi |
Description: MOSFET N-CH 60V 18A/78A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V |
auf Bestellung 3385 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1681CCM1KWGEVB | onsemi |
Description: 1681 1KW BOARD Packaging: Bulk Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C478NWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 9.8A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C478NWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 9.8A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C478NT1G | onsemi |
Description: MOSFET 2N-CH 40V 9.8A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C478NT1G | onsemi |
Description: MOSFET 2N-CH 40V 9.8A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10465 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20200DMTTBG | onsemi |
Description: TRANS PNP 20V 2A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20200DMTTBG | onsemi |
Description: TRANS PNP 20V 2A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD817300W | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 200mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 4µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 3873 Stücke: Lieferzeit 10-14 Tag (e) |
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| FNB80460T3-01 | onsemi |
Description: FNB80460T3-01 Packaging: Bulk Package / Case: 25-PowerDIP Module (0.815", 20.70mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4A Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 450V Applications: General Purpose Technology: IGBT Supplier Device Package: SPMFA-A25 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FNB80560T3-01 | onsemi |
Description: FNB80560T3-01 Packaging: Bulk Package / Case: 25-PowerDIP Module (0.815", 20.70mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (6) Applications: General Purpose Technology: IGBT Supplier Device Package: SPMFA-A25 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
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NCV8182CDTRKG | onsemi |
Description: IC REG LIN POS ADJ 200MA DPAK-5Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK-5 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 85dB (100Hz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8182CDTRKG | onsemi |
Description: IC REG LIN POS ADJ 200MA DPAK-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK-5 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 85dB (100Hz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
auf Bestellung 7445 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75332S3ST | onsemi |
Description: MOSFET N-CH 55V 60A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |
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| 2W02G | onsemi |
Description: BRIDGE RECT 1PHASE 200V 2A WOBPackaging: Bulk Package / Case: 4-Circular, WOB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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MM74HCT32MTC | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4.8mA, 4.8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 95716 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HCT32MTC | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOPPackaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4.8mA, 4.8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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MC74HCT32ADTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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MC74HCT32ADTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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CAT809LTBI-T3 | onsemi |
Description: IC SUPERVISOR MPU PP 4.63V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4.63V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CAT809JTBI-GT3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CAT809SSDI-T3 | onsemi |
Description: IC SUPERVISOR MPU PP 2.93V SC70-Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 2.93V Supplier Device Package: SC-70-3 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CAT809TSDI-T3 | onsemi |
Description: IC SUPERVISOR MPU PP 3.08V SC70-Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 3.08V Supplier Device Package: SC-70-3 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CAT809TTBI-T3 | onsemi |
Description: IC SUPERVISOR MPU PP 3.08V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 3.08V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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NCP1360AABCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 80kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Voltage - Start Up: 18 V Power (Watts): 20 W |
Produkt ist nicht verfügbar |
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NCP1360AABCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 80kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Voltage - Start Up: 18 V Power (Watts): 20 W |
Produkt ist nicht verfügbar |
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MMSZ12T1 | onsemi |
Description: DIODE ZENER 12V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
Produkt ist nicht verfügbar |
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NTMFS08N2D5C | onsemi |
Description: MOSFET N-CH 80V 166A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V |
Produkt ist nicht verfügbar |
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NTMFS08N2D5C | onsemi |
Description: MOSFET N-CH 80V 166A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V |
auf Bestellung 1207 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4839NT1G | onsemi |
Description: MOSFET N-CH 30V 9.5A/64A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1588 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTMFS4823NT1G | onsemi |
Description: MOSFET N-CH 30V 6.9A/30A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V Power Dissipation (Max): 860mW (Ta), 32.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 15 V |
auf Bestellung 132000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4847NAT1G | onsemi |
Description: MOSFET N-CH 30V 11.5A/85A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTMFS4847NT1G | onsemi |
Description: MOSFET N-CH 30V 11.5A/85A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTMFS4849NT1G | onsemi |
Description: MOSFET N-CH 30V 10.2A/71A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 870mW (Ta), 42.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS4839NHT3G | onsemi |
Description: MOSFET N-CH 30V 9.5A/64A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 870mW (Ta), 42.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS4851NT1G | onsemi |
Description: MOSFET N-CH 30V 9.5A/66A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 12 V |
auf Bestellung 83110 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4835NT3G | onsemi |
Description: MOSFET N-CH 30V 13A/130A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V |
Produkt ist nicht verfügbar |
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| STMFS4854NST1G-ON | onsemi |
Description: MOSFET N-CH Packaging: Bulk |
auf Bestellung 67500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4898NFT1G | onsemi |
Description: MOSFET N-CH 30V SO-8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS4846NT1G | onsemi |
Description: MOSFET N-CH 30V 12.7A/100A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS4854NST3G | onsemi |
Description: MOSFET N-CH 25V 15.2A/149A SO8FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SO-8FL Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS4852NT1G | onsemi |
Description: MOSFET N-CH 30V 16A/155A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 12 V |
auf Bestellung 213 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP68 | onsemi |
Description: TRANS NPN 20V 1A SOT-223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MAX809STR | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 105°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 2.93V Supplier Device Package: SOT-23-3 (TO-236) DigiKey Programmable: Not Verified |
auf Bestellung 2951 Stücke: Lieferzeit 10-14 Tag (e) |
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NLSX4401DFT2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 20Mbps Supplier Device Package: SC-88/SC70-6/SOT-363 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Input Signal: CMOS Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLSX4401DFT2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 20Mbps Supplier Device Package: SC-88/SC70-6/SOT-363 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Input Signal: CMOS Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDFS2P753Z | onsemi |
Description: MOSFET P-CH 30V 3A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FCPF9N60NT | onsemi |
Description: MOSFET N-CH 600V 9A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRM120LT3 | onsemi |
Description: DIODE SCHOTTKY 20V 1A POWERMITEPackaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
Produkt ist nicht verfügbar |
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MBRM120LT1 | onsemi |
Description: DIODE SCHOTTKY 20V 1A POWERMITEPackaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDD6N50TM | onsemi |
Description: MOSFET N-CH 500V 6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV8186BMN175TAG | onsemi |
Description: IC REG LINEAR 1.75V 1A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 140 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-DFN (2x2) Voltage - Output (Min/Fixed): 1.75V Control Features: Enable Grade: Automotive PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.295V @ 1A Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8186BMN175TAG | onsemi |
Description: IC REG LINEAR 1.75V 1A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 140 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-DFN (2x2) Voltage - Output (Min/Fixed): 1.75V Control Features: Enable Grade: Automotive PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.295V @ 1A Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
auf Bestellung 38975 Stücke: Lieferzeit 10-14 Tag (e) |
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| FTCO3V85A1 | onsemi |
Description: AUTOMOTIVE POWER MODULEPackaging: Tube Type: MOSFET Configuration: 3 Phase Inverter Current: 120 A Voltage: 80 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| LA5771-HK-E | onsemi |
Description: IC REG BUCK DC-DC TO-220 Packaging: Tube |
auf Bestellung 25667 Stücke: Lieferzeit 10-14 Tag (e) |
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| LA5759-MDB-E | onsemi |
Description: IC REG BUCK ADJ 5.4A 220-5HMDB Packaging: Bulk Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 5.4A (Switch) Operating Temperature: -30°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 80kHz Voltage - Input (Max): 32V Topology: Buck Supplier Device Package: 220-5HMDB Synchronous Rectifier: No Voltage - Output (Max): 32V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.26V |
auf Bestellung 526 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVG800A75L4DSB2 |
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Hersteller: onsemi
Description: MODULE
Packaging: Bulk
Package / Case: 15-PowerDIP Module (2.827", 71.80mm)
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AHPM15-CEC
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 43000 pF @ 30 V
Description: MODULE
Packaging: Bulk
Package / Case: 15-PowerDIP Module (2.827", 71.80mm)
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AHPM15-CEC
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 43000 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM7918CT |
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Hersteller: onsemi
Description: IC REG LIN -18V 1A TO220 POWER
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): -18V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LIN -18V 1A TO220 POWER
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): -18V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 649+ | 0.69 EUR |
| LM7918CT |
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Hersteller: onsemi
Description: IC REG LINEAR -18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -18V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -18V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS016N10MCLTWG |
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Hersteller: onsemi
Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 13+ | 1.4 EUR |
| 25+ | 1.27 EUR |
| 100+ | 1.12 EUR |
| 250+ | 1.05 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.99 EUR |
| NTTFS5D1N06HLTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
auf Bestellung 3385 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.17 EUR |
| NCP1681CCM1KWGEVB |
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1022.45 EUR |
| NVMFD5C478NWFT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 1 EUR |
| 3000+ | 0.98 EUR |
| NVMFD5C478NWFT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.03 EUR |
| 10+ | 2.1 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.23 EUR |
| NVMFD5C478NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 1.11 EUR |
| 3000+ | 1.06 EUR |
| 4500+ | 1.05 EUR |
| NVMFD5C478NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 9.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10465 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.3 EUR |
| NSS20200DMTTBG |
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Hersteller: onsemi
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |
| 9000+ | 0.34 EUR |
| NSS20200DMTTBG |
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Hersteller: onsemi
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 20+ | 0.89 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.44 EUR |
| FOD817300W |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3873 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.22 EUR |
| FNB80460T3-01 |
Hersteller: onsemi
Description: FNB80460T3-01
Packaging: Bulk
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 450V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: SPMFA-A25
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: FNB80460T3-01
Packaging: Bulk
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 450V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: SPMFA-A25
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FNB80560T3-01 |
Hersteller: onsemi
Description: FNB80560T3-01
Packaging: Bulk
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Applications: General Purpose
Technology: IGBT
Supplier Device Package: SPMFA-A25
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: FNB80560T3-01
Packaging: Bulk
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Applications: General Purpose
Technology: IGBT
Supplier Device Package: SPMFA-A25
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8182CDTRKG |
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Hersteller: onsemi
Description: IC REG LIN POS ADJ 200MA DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 200MA DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.94 EUR |
| 5000+ | 0.92 EUR |
| NCV8182CDTRKG |
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Hersteller: onsemi
Description: IC REG LIN POS ADJ 200MA DPAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 200MA DPAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 7445 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.31 EUR |
| 10+ | 2.07 EUR |
| 25+ | 1.74 EUR |
| 100+ | 1.38 EUR |
| 250+ | 1.19 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.99 EUR |
| HUF75332S3ST |
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Hersteller: onsemi
Description: MOSFET N-CH 55V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 55V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2W02G |
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Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 200V 2A WOB
Packaging: Bulk
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A WOB
Packaging: Bulk
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| MM74HCT32MTC |
![]() |
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 95716 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1088+ | 0.43 EUR |
| MM74HCT32MTC |
![]() |
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| MC74HCT32ADTR2G |
![]() |
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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| MC74HCT32ADTR2G |
![]() |
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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| CAT809LTBI-T3 |
![]() |
Hersteller: onsemi
Description: IC SUPERVISOR MPU PP 4.63V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR MPU PP 4.63V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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| CAT809JTBI-GT3 |
![]() |
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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| CAT809SSDI-T3 |
![]() |
Hersteller: onsemi
Description: IC SUPERVISOR MPU PP 2.93V SC70-
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SC-70-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR MPU PP 2.93V SC70-
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SC-70-3
DigiKey Programmable: Not Verified
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| CAT809TSDI-T3 |
![]() |
Hersteller: onsemi
Description: IC SUPERVISOR MPU PP 3.08V SC70-
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SC-70-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR MPU PP 3.08V SC70-
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SC-70-3
DigiKey Programmable: Not Verified
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| CAT809TTBI-T3 |
![]() |
Hersteller: onsemi
Description: IC SUPERVISOR MPU PP 3.08V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR MPU PP 3.08V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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| NCP1360AABCYSNT1G |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Produkt ist nicht verfügbar
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| NCP1360AABCYSNT1G |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Produkt ist nicht verfügbar
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| MMSZ12T1 |
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Hersteller: onsemi
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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| NTMFS08N2D5C |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 166A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
Description: MOSFET N-CH 80V 166A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
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| NTMFS08N2D5C |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 166A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
Description: MOSFET N-CH 80V 166A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 1207 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.31 EUR |
| 10+ | 9.07 EUR |
| 100+ | 6.67 EUR |
| 500+ | 6.61 EUR |
| NTMFS4839NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1588 pF @ 12 V
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1588 pF @ 12 V
Produkt ist nicht verfügbar
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| NTMFS4823NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.9A/30A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Power Dissipation (Max): 860mW (Ta), 32.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 15 V
Description: MOSFET N-CH 30V 6.9A/30A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Power Dissipation (Max): 860mW (Ta), 32.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 15 V
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1099+ | 0.44 EUR |
| NTMFS4847NAT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11.5A/85A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V
Description: MOSFET N-CH 30V 11.5A/85A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V
Produkt ist nicht verfügbar
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| NTMFS4847NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.5A/85A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V
Description: MOSFET N-CH 30V 11.5A/85A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTMFS4849NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.2A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 12 V
Description: MOSFET N-CH 30V 10.2A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTMFS4839NHT3G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTMFS4851NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A/66A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 12 V
Description: MOSFET N-CH 30V 9.5A/66A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 12 V
auf Bestellung 83110 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 683+ | 0.68 EUR |
| NTMFS4835NT3G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STMFS4854NST1G-ON |
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 485+ | 1.02 EUR |
| NTMFS4898NFT1G |
Hersteller: onsemi
Description: MOSFET N-CH 30V SO-8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V
Description: MOSFET N-CH 30V SO-8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V
Produkt ist nicht verfügbar
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| NTMFS4846NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 12.7A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V
Description: MOSFET N-CH 30V 12.7A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V
Produkt ist nicht verfügbar
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| NTMFS4854NST3G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 25V 15.2A/149A SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SO-8FL
Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 12 V
Description: MOSFET N-CH 25V 15.2A/149A SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SO-8FL
Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4852NT1G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A/155A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 12 V
Description: MOSFET N-CH 30V 16A/155A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 12 V
auf Bestellung 213 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.57 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.55 EUR |
| BCP68 |
![]() |
Hersteller: onsemi
Description: TRANS NPN 20V 1A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS NPN 20V 1A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MAX809STR |
![]() |
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3 (TO-236)
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3 (TO-236)
DigiKey Programmable: Not Verified
auf Bestellung 2951 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1137+ | 0.39 EUR |
| NLSX4401DFT2G |
![]() |
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 20Mbps
Supplier Device Package: SC-88/SC70-6/SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Input Signal: CMOS
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 20Mbps
Supplier Device Package: SC-88/SC70-6/SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Input Signal: CMOS
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLSX4401DFT2G |
![]() |
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 20Mbps
Supplier Device Package: SC-88/SC70-6/SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Input Signal: CMOS
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 20Mbps
Supplier Device Package: SC-88/SC70-6/SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Input Signal: CMOS
Number of Circuits: 1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDFS2P753Z |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 30V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Description: MOSFET P-CH 30V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
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| FCPF9N60NT |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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| MBRM120LT3 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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| MBRM120LT1 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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| FDD6N50TM |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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| NCV8186BMN175TAG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.75V 1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 140 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x2)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.295V @ 1A
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 1.75V 1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 140 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x2)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.295V @ 1A
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| 15000+ | 0.33 EUR |
| NCV8186BMN175TAG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.75V 1A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 140 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x2)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.295V @ 1A
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 1.75V 1A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 140 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x2)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.295V @ 1A
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 38975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.87 EUR |
| 25+ | 0.82 EUR |
| 100+ | 0.62 EUR |
| 250+ | 0.53 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.38 EUR |
| FTCO3V85A1 |
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Hersteller: onsemi
Description: AUTOMOTIVE POWER MODULE
Packaging: Tube
Type: MOSFET
Configuration: 3 Phase Inverter
Current: 120 A
Voltage: 80 V
Description: AUTOMOTIVE POWER MODULE
Packaging: Tube
Type: MOSFET
Configuration: 3 Phase Inverter
Current: 120 A
Voltage: 80 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 59.35 EUR |
| 11+ | 52.88 EUR |
| LA5771-HK-E |
auf Bestellung 25667 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 349+ | 1.29 EUR |
| LA5759-MDB-E |
Hersteller: onsemi
Description: IC REG BUCK ADJ 5.4A 220-5HMDB
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5.4A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 80kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 220-5HMDB
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
Description: IC REG BUCK ADJ 5.4A 220-5HMDB
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5.4A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 80kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 220-5HMDB
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 2.86 EUR |





























