Technische Details HGTD7N60C3S9A ON Semiconductor
Description: IGBT 600V 14A TO-252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A, Supplier Device Package: TO-252AA, Switching Energy: 165µJ (on), 600µJ (off), Gate Charge: 23 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.
Weitere Produktangebote HGTD7N60C3S9A nach Preis ab 1.55 EUR bis 4.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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HGTD7N60C3S9A | ON Semiconductor |
 Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5939 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD7N60C3S9A | ON Semiconductor |
Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD7N60C3S9A | Fairchild Semiconductor |
Description: IGBT 600V 14A TO-252 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-252 (DPAK) Switching Energy: 165µJ (on), 600µJ (off) Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 249 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTD7N60C3S9A | onsemi |
Description: IGBT 600V 14A TO-252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-252AA Switching Energy: 165µJ (on), 600µJ (off) Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 1483 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTD7N60C3S9A |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5939 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 219+ | 3.01 EUR |
| 500+ | 2.67 EUR |
| 1000+ | 2.42 EUR |
| HGTD7N60C3S9A |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 493 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 219+ | 3.01 EUR |
| HGTD7N60C3S9A |
|
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: IGBT 600V 14A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 175+ | 3.05 EUR |
| HGTD7N60C3S9A |
|
Hersteller: onsemi
Description: IGBT 600V 14A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252AA
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: IGBT 600V 14A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252AA
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 1483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.71 EUR |
| 10+ | 3.05 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.55 EUR |