HGTD7N60C3S9A Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
| Anzahl | Preis |
|---|---|
| 175+ | 2.56 EUR |
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Technische Details HGTD7N60C3S9A Fairchild Semiconductor
Description: IGBT 600V 14A TO-252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A, Supplier Device Package: TO-252AA, Switching Energy: 165µJ (on), 600µJ (off), Gate Charge: 23 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.
Weitere Produktangebote HGTD7N60C3S9A nach Preis ab 1.3 EUR bis 3.96 EUR
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HGTD7N60C3S9A | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5939 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD7N60C3S9A | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD7N60C3S9A | Hersteller : onsemi |
Description: IGBT 600V 14A TO-252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-252AA Switching Energy: 165µJ (on), 600µJ (off) Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 1483 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTD7N60C3S9A | Hersteller : FAIRCHILD |
Trans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD7N60C3S9A | Hersteller : onsemi |
Description: IGBT 600V 14A TO-252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-252AA Switching Energy: 165µJ (on), 600µJ (off) Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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HGTD7N60C3S9A | Hersteller : onsemi / Fairchild |
IGBT Transistors 14a 600V N-Ch IGBT UFS Series |
Produkt ist nicht verfügbar |