HGTD7N60C3S9A ON Semiconductor
auf Bestellung 5939 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 210+ | 2.58 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2 EUR |
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Technische Details HGTD7N60C3S9A ON Semiconductor
Description: IGBT 600V 14A TO-252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A, Supplier Device Package: TO-252AA, Switching Energy: 165µJ (on), 600µJ (off), Gate Charge: 23 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.
Weitere Produktangebote HGTD7N60C3S9A nach Preis ab 1.31 EUR bis 4 EUR
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HGTD7N60C3S9A | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 14A 60W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD7N60C3S9A | Hersteller : Fairchild Semiconductor |
Description: IGBT 600V 14A TO-252 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-252 (DPAK) Switching Energy: 165µJ (on), 600µJ (off) Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 249 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTD7N60C3S9A | Hersteller : onsemi |
Description: IGBT 600V 14A TO-252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-252AA Switching Energy: 165µJ (on), 600µJ (off) Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 1834 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTD7N60C3S9A | Hersteller : FAIRCHILD |
Trans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTD7N60C3S9A | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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HGTD7N60C3S9A | Hersteller : onsemi |
Description: IGBT 600V 14A TO-252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-252AA Switching Energy: 165µJ (on), 600µJ (off) Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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HGTD7N60C3S9A | Hersteller : onsemi / Fairchild |
IGBT Transistors 14a 600V N-Ch IGBT UFS Series |
Produkt ist nicht verfügbar |