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NCP1077STAT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1079AAP065G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
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NCP1079AAP100G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
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BD135G ONSEMI bd135-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: TO225
Mounting: THT
Power dissipation: 12.5W
Current gain: 40...250
Kind of package: bulk
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NCV8187AMLE330TCG ONSEMI ncv8187-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; DFNW8; SMD
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Case: DFNW8
Produkt ist nicht verfügbar
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S2SA1774G ONSEMI 2sa1774-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NVLJWS022N06CLTAG ONSEMI nvljws022n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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SB5100 SB5100 ONSEMI SB5100%20N0092%20REV.B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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1N459ATR ONSEMI FAIRS22995-1.pdf?t.download=true&u=5oefqw 1n459a-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Kind of package: reel; tape
Case: DO35
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1N459A ONSEMI 1n459a-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Kind of package: bulk
Case: DO35
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MJ15016G ONSEMI 2n3055a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
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NVMFS040N10MCLT1G ONSEMI nvmfs040n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS040N10MCLTAG ONSEMI nvtfs040n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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VESSZESD7205WTT1G ONSEMI Category: Unclassified
Description: VESSZESD7205WTT1G
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.077 EUR
Mindestbestellmenge: 3000
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LM2574N-12G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
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ATP112-TL-H ONSEMI Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -75A; 40W; ATPAK
Case: ATPAK
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -75A
Drain-source voltage: -60V
Drain current: -25A
Gate charge: 33.5nC
On-state resistance: 43mΩ
Gate-source voltage: ±20V
Power dissipation: 40W
Polarisation: unipolar
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SZESD9B5.0ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MBRB1545CTT4G ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.84V
Max. load current: 15A
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SBRB1545CTG ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.84V
Max. load current: 15A
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FDPF18N20FT ONSEMI fdpf18n20ft-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
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NVMTS1D2N08H ONSEMI nvmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D5N08H ONSEMI nvmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG ONSEMI nvmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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MC74HC32ADR2G-Q ONSEMI mc74hc32a-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.16 EUR
Mindestbestellmenge: 2500
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NSVPZTA92T1G ONSEMI pzta92t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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NSVPZTA92T3G ONSEMI pzta92t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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1SMB5926BT3G 1SMB5926BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 description Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
224+0.32 EUR
265+0.27 EUR
424+0.17 EUR
516+0.14 EUR
582+0.12 EUR
Mindestbestellmenge: 179
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SZ1SMB5926BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FCH041N65EF-F155 ONSEMI fch041n65ef-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
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FCH041N65EFL4 ONSEMI fch041n65efl4-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
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FCH041N65F-F085 ONSEMI fch041n65f_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
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LE25U20AMB-AH ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461C20D5&compId=LE25U20AMB-D.pdf?ci_sign=ea97833268199765d90221db575a8284f0dcf3c3 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
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LE25U20AQGTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461D60D5&compId=LE25U20AQG-D.pdf?ci_sign=7ff354421294610dca502ecca670d41a7f665668 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
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SZ1SMB5933BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NVTFS014P04M8LTAG ONSEMI nvtfs014p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -224A; 30W; WDFN8
Mounting: SMD
Case: WDFN8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -224A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 26.5nC
On-state resistance: 13.8mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
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NVMFS014P04M8LT1G ONSEMI nvmfs014p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -52.1A; Idm: -268A; 30W; DFN5
Mounting: SMD
Case: DFN5
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -268A
Drain current: -52.1A
Drain-source voltage: -40V
Gate charge: 26.5nC
On-state resistance: 13.8mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
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NVTFWS014P04M8LTAG ONSEMI nvtfs014p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -224A; 30W; WDFNW8
Mounting: SMD
Case: WDFNW8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -224A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 26.5nC
On-state resistance: 13.8mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
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NVMFWS014P04M8LT1G ONSEMI nvmfs014p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -52.1A; Idm: -268A; 30W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -52.1A
Pulsed drain current: -268A
Power dissipation: 30W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3041SR2VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3041SVM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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MOC3041VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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NDT3055L NDT3055L ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEA8F8C9250745&compId=NDT3055L.pdf?ci_sign=3ffa45876de5aadd8e2ae89fc79064ad1cb01cab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4409 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
60+1.2 EUR
66+1.1 EUR
130+0.55 EUR
137+0.52 EUR
2000+0.5 EUR
Mindestbestellmenge: 53
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MMBF170 MMBF170 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3109 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
371+0.19 EUR
538+0.13 EUR
631+0.11 EUR
1021+0.07 EUR
1080+0.066 EUR
Mindestbestellmenge: 250
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MMBF170LT1G MMBF170LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C152FCE66C469&compId=MMBF170LT1G.PDF?ci_sign=290e0833eccb810af42552b67dc826a51f4ea9ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
358+0.2 EUR
455+0.16 EUR
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MLISZNUP2105LT1G ONSEMI Category: Unclassified
Description: MLISZNUP2105LT1G
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.078 EUR
Mindestbestellmenge: 3000
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NTHL045N065SC1 ONSEMI nthl045n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 46A; Idm: 191A; 145W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 191A
Power dissipation: 145W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVBG045N065SC1 ONSEMI nvbg045n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NTH4L045N065SC1 ONSEMI nth4l045n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L045N065SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB59AB795B97EC0D8&compId=NVH4L045N065SC1.PDF?ci_sign=7fd222a1bb44cf8be84ebf23b05b553ec6446e2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 55A; Idm: 197A; 187W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 55A
Pulsed drain current: 197A
Power dissipation: 187W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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SCM1293A-04SO ONSEMI cm1293a-04so-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.066 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NUF6010MUT2G ONSEMI nuf6010mu-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; uDFN12; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Case: uDFN12
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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SZESD8551MXWT5G ONSEMI esd8551-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMBD1205 MMBD1205 ONSEMI mmbd1202-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
432+0.17 EUR
627+0.11 EUR
736+0.097 EUR
1205+0.059 EUR
1276+0.056 EUR
Mindestbestellmenge: 313
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NC7SZ19P6X NC7SZ19P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE04910074800C7&compId=NC7SZ19P6X.pdf?ci_sign=d68a86239a53bf514da0258124e7c350a57dabbf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC
Kind of package: reel; tape
Kind of integrated circuit: decoder; demultiplexer
Type of integrated circuit: digital
Case: SC70
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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NC7SZ19P6X-L22347 ONSEMI Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; CMOS; SMD; SC70-6; 7SZ; OUT: 2
Manufacturer series: 7SZ
Technology: CMOS
Kind of integrated circuit: decoder; demultiplexer
Type of integrated circuit: digital
Case: SC70-6
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 2
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C450NAFT1G ONSEMI nvmfs5c450n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 102A
Pulsed drain current: 554A
Power dissipation: 34W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C450NLAFT1G ONSEMI nvmfs5c450nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 740A; 34W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 740A
Power dissipation: 34W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MARNVMFS5C450NWFAFT1G ONSEMI Category: Contactors - Unclassified
Description: MARNVMFS5C450NWFAFT1G
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
1500+0.42 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
KA7805ERTF
+1
 		KA7805ERTF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED885ABEBD474B4EA18&compId=KA78xxE_AE.pdf?ci_sign=7e680eeaa7cf929f51097de906f79bcb8539c738 Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...25V
Produkt ist nicht verfügbar
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MC74HC4020ADG MC74HC4020ADG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BA949AEC0D3&compId=MC74HC4020A-D.pdf?ci_sign=6670d64d8d4c11cc7faa8ad7da17ff2ef804cb01 Category: Counters/dividers
Description: IC: digital; 14-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Mounting: SMD
Manufacturer series: HC
Technology: CMOS
Type of integrated circuit: digital
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 2
Kind of integrated circuit: 14-stage; binary ripple counter
Case: SOIC16
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.3 EUR
Mindestbestellmenge: 31
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NCP1077STAT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1079AAP065G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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NCP1079AAP100G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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BD135G bd135-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: TO225
Mounting: THT
Power dissipation: 12.5W
Current gain: 40...250
Kind of package: bulk
Produkt ist nicht verfügbar
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NCV8187AMLE330TCG ncv8187-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; DFNW8; SMD
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Case: DFNW8
Produkt ist nicht verfügbar
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S2SA1774G 2sa1774-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NVLJWS022N06CLTAG nvljws022n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SB5100 SB5100%20N0092%20REV.B.pdf
SB5100
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Produkt ist nicht verfügbar
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1N459ATR FAIRS22995-1.pdf?t.download=true&u=5oefqw 1n459a-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Kind of package: reel; tape
Case: DO35
Produkt ist nicht verfügbar
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1N459A 1n459a-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Kind of package: bulk
Case: DO35
Produkt ist nicht verfügbar
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MJ15016G 2n3055a-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Produkt ist nicht verfügbar
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NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS040N10MCLTAG nvtfs040n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VESSZESD7205WTT1G
Hersteller: ONSEMI
Category: Unclassified
Description: VESSZESD7205WTT1G
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.077 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
LM2574N-12G description LM2574.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ATP112-TL-H
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -75A; 40W; ATPAK
Case: ATPAK
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -75A
Drain-source voltage: -60V
Drain current: -25A
Gate charge: 33.5nC
On-state resistance: 43mΩ
Gate-source voltage: ±20V
Power dissipation: 40W
Polarisation: unipolar
Produkt ist nicht verfügbar
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SZESD9B5.0ST5G esd9b-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBRB1545CTT4G mbrb1545ct-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.84V
Max. load current: 15A
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SBRB1545CTG mbrb1545ct-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.84V
Max. load current: 15A
Produkt ist nicht verfügbar
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FDPF18N20FT fdpf18n20ft-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
Produkt ist nicht verfügbar
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NVMTS1D2N08H nvmts1d2n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMTS1D5N08H nvmts1d5n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMTS1D6N10MCTXG nvmts1d6n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC32ADR2G-Q mc74hc32a-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NSVPZTA92T1G pzta92t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NSVPZTA92T3G pzta92t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5926BT3G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5926BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
224+0.32 EUR
265+0.27 EUR
424+0.17 EUR
516+0.14 EUR
582+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5926BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N65EF-F155 fch041n65ef-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
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FCH041N65EFL4 fch041n65efl4-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N65F-F085 fch041n65f_f085-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LE25U20AMB-AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461C20D5&compId=LE25U20AMB-D.pdf?ci_sign=ea97833268199765d90221db575a8284f0dcf3c3
Hersteller: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LE25U20AQGTXG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461D60D5&compId=LE25U20AQG-D.pdf?ci_sign=7ff354421294610dca502ecca670d41a7f665668
Hersteller: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5933BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS014P04M8LTAG nvtfs014p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -224A; 30W; WDFN8
Mounting: SMD
Case: WDFN8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -224A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 26.5nC
On-state resistance: 13.8mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NVMFS014P04M8LT1G nvmfs014p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -52.1A; Idm: -268A; 30W; DFN5
Mounting: SMD
Case: DFN5
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -268A
Drain current: -52.1A
Drain-source voltage: -40V
Gate charge: 26.5nC
On-state resistance: 13.8mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NVTFWS014P04M8LTAG nvtfs014p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -224A; 30W; WDFNW8
Mounting: SMD
Case: WDFNW8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -224A
Drain current: -49A
Drain-source voltage: -40V
Gate charge: 26.5nC
On-state resistance: 13.8mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NVMFWS014P04M8LT1G nvmfs014p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -52.1A; Idm: -268A; 30W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -52.1A
Pulsed drain current: -268A
Power dissipation: 30W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3041SR2VM MOC3043M-D.PDF
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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MOC3041SVM MOC3043M-D.PDF
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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MOC3041VM MOC3043M-D.PDF
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
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NDT3055L pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEA8F8C9250745&compId=NDT3055L.pdf?ci_sign=3ffa45876de5aadd8e2ae89fc79064ad1cb01cab
NDT3055L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
60+1.2 EUR
66+1.1 EUR
130+0.55 EUR
137+0.52 EUR
2000+0.5 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
MMBF170 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379
MMBF170
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
371+0.19 EUR
538+0.13 EUR
631+0.11 EUR
1021+0.07 EUR
1080+0.066 EUR
Mindestbestellmenge: 250
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MMBF170LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C152FCE66C469&compId=MMBF170LT1G.PDF?ci_sign=290e0833eccb810af42552b67dc826a51f4ea9ab
MMBF170LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
358+0.2 EUR
455+0.16 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
MLISZNUP2105LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MLISZNUP2105LT1G
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.078 EUR
Mindestbestellmenge: 3000
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NTHL045N065SC1 nthl045n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 46A; Idm: 191A; 145W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 191A
Power dissipation: 145W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVBG045N065SC1 nvbg045n065sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NTH4L045N065SC1 nth4l045n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L045N065SC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB59AB795B97EC0D8&compId=NVH4L045N065SC1.PDF?ci_sign=7fd222a1bb44cf8be84ebf23b05b553ec6446e2f
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 55A; Idm: 197A; 187W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 55A
Pulsed drain current: 197A
Power dissipation: 187W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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SCM1293A-04SO cm1293a-04so-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.066 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NUF6010MUT2G nuf6010mu-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; uDFN12; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Case: uDFN12
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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SZESD8551MXWT5G esd8551-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMBD1205 mmbd1202-d.pdf
MMBD1205
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
432+0.17 EUR
627+0.11 EUR
736+0.097 EUR
1205+0.059 EUR
1276+0.056 EUR
Mindestbestellmenge: 313
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NC7SZ19P6X pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE04910074800C7&compId=NC7SZ19P6X.pdf?ci_sign=d68a86239a53bf514da0258124e7c350a57dabbf
NC7SZ19P6X
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC
Kind of package: reel; tape
Kind of integrated circuit: decoder; demultiplexer
Type of integrated circuit: digital
Case: SC70
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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NC7SZ19P6X-L22347
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; CMOS; SMD; SC70-6; 7SZ; OUT: 2
Manufacturer series: 7SZ
Technology: CMOS
Kind of integrated circuit: decoder; demultiplexer
Type of integrated circuit: digital
Case: SC70-6
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 2
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C450NAFT1G nvmfs5c450n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 102A
Pulsed drain current: 554A
Power dissipation: 34W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C450NLAFT1G nvmfs5c450nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 740A; 34W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 740A
Power dissipation: 34W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MARNVMFS5C450NWFAFT1G
Hersteller: ONSEMI
Category: Contactors - Unclassified
Description: MARNVMFS5C450NWFAFT1G
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+0.42 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
KA7805ERTF pVersion=0046&contRep=ZT&docId=005056AB752F1ED885ABEBD474B4EA18&compId=KA78xxE_AE.pdf?ci_sign=7e680eeaa7cf929f51097de906f79bcb8539c738
KA7805ERTF
+1
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...25V
Produkt ist nicht verfügbar
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MC74HC4020ADG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BA949AEC0D3&compId=MC74HC4020A-D.pdf?ci_sign=6670d64d8d4c11cc7faa8ad7da17ff2ef804cb01
MC74HC4020ADG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Mounting: SMD
Manufacturer series: HC
Technology: CMOS
Type of integrated circuit: digital
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 2
Kind of integrated circuit: 14-stage; binary ripple counter
Case: SOIC16
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.3 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
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