Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (148645) > Seite 2469 nach 2478

Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2464 2465 2466 2467 2468 2469 2470 2471 2472 2473 2474 2478  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MC79M12CDTRKG MC79M12CDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.1V
Kind of package: reel; tape
Tolerance: ±4%
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14070BDG MC14070BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
116+0.61 EUR
Mindestbestellmenge: 116
Im Einkaufswagen  Stück im Wert von  UAH
MC14070BDR2G MC14070BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14017BDR2G MC14017BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759680D3&compId=MC14017B-D.pdf?ci_sign=80bfbdff57929c623ca32c0563a1db3d26e54d3f Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Number of inputs: 3
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD16N25CTM FQD16N25CTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197B706AEBEC259&compId=FQD16N25C.pdf?ci_sign=8644cd4bd1abc793db4f96f5c30357ab5205bd62 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQPF16N25C FQPF16N25C ONSEMI fqp16n25c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS010N06CLTWG ONSEMI nvtys010n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGY100T120SWD ONSEMI Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGY120T65SPD-F085 ONSEMI fgy120t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AFGY120T65SPD ONSEMI afgy120t65spd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342R2 ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342TR2 ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DA140C7&compId=FOD8342.pdf?ci_sign=bb8fcdbf407d51cc189d18de6b6fcdec095a9c77 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342TR2V ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMA1023PZ
+1
 		FDMA1023PZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF2F8706057E28&compId=FDMA1023PZ.pdf?ci_sign=38fcd52e75e1f2ae3c9c43fc4f339ac121a1cc8e Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5927BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5919BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MAGNCV8402ASTT1G ONSEMI Category: Unclassified
Description: MAGNCV8402ASTT1G
auf Bestellung 111000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.36 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ESD5Z12T1G ESD5Z12T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996 description Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.24kW
Version: ESD
Leakage current: 10nA
Max. forward impulse current: 9.6A
auf Bestellung 5350 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
676+0.11 EUR
794+0.09 EUR
1296+0.055 EUR
1578+0.045 EUR
2213+0.032 EUR
2618+0.027 EUR
2763+0.026 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
SZESD5Z12T1G ONSEMI esd5z2.5t1-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5Z12T5G ONSEMI esd5z2.5t1-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.24kW; 14.1V; 9.6A; unidirectional; SOD523; -55÷150°C
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Application: general purpose
Peak pulse power dissipation: 0.24kW
Version: ESD
Operating temperature: -55...150°C
Capacitance: 55pF
Leakage current: 10nA
Number of channels: 1
Max. forward impulse current: 9.6A
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
8000+0.027 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
MARSZESD5Z12T1G ONSEMI Category: Unclassified
Description: MARSZESD5Z12T1G
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.038 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
LM201AVDR2G ONSEMI lm301a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSD301T1G MMSD301T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Capacitance: 1.5pF
Load current: 0.2A
Power dissipation: 0.225W
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
472+0.15 EUR
693+0.1 EUR
819+0.087 EUR
1137+0.063 EUR
1185+0.06 EUR
1202+0.059 EUR
1247+0.057 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CLTXG ONSEMI nvmts0d4n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS0D4N04CLTXG ONSEMI ntmts0d4n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS0D4N04CTXG ONSEMI ntmts0d4n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88
Gate charge: 251nC
On-state resistance: 450µΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 558A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMYS2D4N04CTWG ONSEMI ntmys2d4n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS2D4N04CTWG ONSEMI nvmys2d4n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS004N04CTAG ONSEMI nvtfs004n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Gate charge: 18nC
On-state resistance: 4.9mΩ
Power dissipation: 18W
Gate-source voltage: ±20V
Drain current: 77A
Drain-source voltage: 40V
Pulsed drain current: 338A
Case: WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS004N04CLTWG ONSEMI nvtys004n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Gate charge: 25nC
On-state resistance: 4.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 84A
Drain-source voltage: 40V
Pulsed drain current: 371A
Case: LFPAK33
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS0D4N04XMT1G ONSEMI nvmfws0d4n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 509A; Idm: 900A; 197W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 509A
Pulsed drain current: 900A
Power dissipation: 197W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CTXG ONSEMI nvmts0d4n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+10.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MJE182G MJE182G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCAD4FDD0532469&compId=MJE172G.PDF?ci_sign=3c6dadb8fcbe5fae378ccaa3a3322e208487e487 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SP14P5X NC7SP14P5X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE883C93FC1BDE28&compId=NC7SP14.pdf?ci_sign=c7389bd3726a6da01fe4ae6a64e92fbaf2d2a548 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7WP14P6X ONSEMI NC7WP14-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS5D9N08HTWG ONSEMI nttfs5d9n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 535A; 100W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Case: WDFN8
Gate charge: 31nC
On-state resistance: 5.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 84A
Power dissipation: 100W
Kind of channel: enhancement
Pulsed drain current: 535A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14504BDTG MC14504BDTG ONSEMI mc14504b-d.pdf Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14538BDR2G MC14538BDR2G ONSEMI mc14538b-d.pdf Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Mounting: SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Case: SO16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSR30CM3T5G ONSEMI nsr30cm3t5g-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Case: SOT723
Load current: 0.2A
Max. forward voltage: 0.8V
Mounting: SMD
Max. off-state voltage: 30V
Type of diode: Schottky switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE5852G MJE5852G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1067ACF016469&compId=MJE5852.PDF?ci_sign=4b37f3bd1f970100f0cead7caec4bf795e807558 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: TO220AB
Current gain: 15
Mounting: THT
Kind of package: tube
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
MOC3083SVM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MOC3083VM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRM120ET1G ONSEMI mbrm120e-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape
Case: POWERMITE
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.54V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRM120LT3G ONSEMI mbrm120l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Case: DO216AA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS004N10MCT1G ONSEMI nvmfws004n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 138A
Pulsed drain current: 900A
Power dissipation: 82W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS0D5N04XMT1G ONSEMI nvmfws0d5n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 414A; Idm: 900A; 163W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 414A
Pulsed drain current: 900A
Power dissipation: 163W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 520µΩ
Mounting: SMD
Gate charge: 97.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS0D7N04XMT1G ONSEMI nvmfws0d7n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 323A; Idm: 900A; 134W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 323A
Pulsed drain current: 900A
Power dissipation: 134W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 71.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS2D3N04XMT1G ONSEMI nvmfws2d3n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS2D3P04M8LT1G ONSEMI nvmfs2d3p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS3D0P04M8LT1G ONSEMI nvmfs3d0p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2631SD HCPL2631SD ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACACB8ECA9CB3E27&compId=HCPL2631SD.pdf?ci_sign=44300f5e39df52fced2333a5ad8027c2de961698 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC139MTCX 74AC139MTCX ONSEMI ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
119+0.6 EUR
140+0.51 EUR
202+0.35 EUR
213+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5932BT3G 1SMB5932BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 4203 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
230+0.31 EUR
266+0.27 EUR
417+0.17 EUR
506+0.14 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5932BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSV1045V ONSEMI fsv1045v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMA5945BT3G 1SMA5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMA5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC79M12CDTRKG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M12CDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.1V
Kind of package: reel; tape
Tolerance: ±4%
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14070BDG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5
MC14070BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
116+0.61 EUR
Mindestbestellmenge: 116
Im Einkaufswagen  Stück im Wert von  UAH
MC14070BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5
MC14070BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14017BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759680D3&compId=MC14017B-D.pdf?ci_sign=80bfbdff57929c623ca32c0563a1db3d26e54d3f
MC14017BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Number of inputs: 3
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD16N25CTM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197B706AEBEC259&compId=FQD16N25C.pdf?ci_sign=8644cd4bd1abc793db4f96f5c30357ab5205bd62
FQD16N25CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQPF16N25C fqp16n25c-d.pdf
FQPF16N25C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS010N06CLTWG nvtys010n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGY100T120SWD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGY120T65SPD-F085 fgy120t65spd-f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AFGY120T65SPD afgy120t65spd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342R2 fod8342-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342TR2 fod8342-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DA140C7&compId=FOD8342.pdf?ci_sign=bb8fcdbf407d51cc189d18de6b6fcdec095a9c77
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8342TR2V fod8342-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMA1023PZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF2F8706057E28&compId=FDMA1023PZ.pdf?ci_sign=38fcd52e75e1f2ae3c9c43fc4f339ac121a1cc8e
FDMA1023PZ
+1
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5927BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5919BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MAGNCV8402ASTT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MAGNCV8402ASTT1G
auf Bestellung 111000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.36 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ESD5Z12T1G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996
ESD5Z12T1G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.24kW
Version: ESD
Leakage current: 10nA
Max. forward impulse current: 9.6A
auf Bestellung 5350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
676+0.11 EUR
794+0.09 EUR
1296+0.055 EUR
1578+0.045 EUR
2213+0.032 EUR
2618+0.027 EUR
2763+0.026 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
SZESD5Z12T1G esd5z2.5t1-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5Z12T5G esd5z2.5t1-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.24kW; 14.1V; 9.6A; unidirectional; SOD523; -55÷150°C
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Application: general purpose
Peak pulse power dissipation: 0.24kW
Version: ESD
Operating temperature: -55...150°C
Capacitance: 55pF
Leakage current: 10nA
Number of channels: 1
Max. forward impulse current: 9.6A
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8000+0.027 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
MARSZESD5Z12T1G
Hersteller: ONSEMI
Category: Unclassified
Description: MARSZESD5Z12T1G
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.038 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
LM201AVDR2G lm301a-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSD301T1G mmsd301t1-d.pdf
MMSD301T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Capacitance: 1.5pF
Load current: 0.2A
Power dissipation: 0.225W
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
472+0.15 EUR
693+0.1 EUR
819+0.087 EUR
1137+0.063 EUR
1185+0.06 EUR
1202+0.059 EUR
1247+0.057 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CLTXG nvmts0d4n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS0D4N04CLTXG ntmts0d4n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS0D4N04CTXG ntmts0d4n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88
Gate charge: 251nC
On-state resistance: 450µΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 558A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMYS2D4N04CTWG ntmys2d4n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS2D4N04CTWG nvmys2d4n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS004N04CTAG nvtfs004n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Gate charge: 18nC
On-state resistance: 4.9mΩ
Power dissipation: 18W
Gate-source voltage: ±20V
Drain current: 77A
Drain-source voltage: 40V
Pulsed drain current: 338A
Case: WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS004N04CLTWG nvtys004n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Gate charge: 25nC
On-state resistance: 4.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 84A
Drain-source voltage: 40V
Pulsed drain current: 371A
Case: LFPAK33
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS0D4N04XMT1G nvmfws0d4n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 509A; Idm: 900A; 197W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 509A
Pulsed drain current: 900A
Power dissipation: 197W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CTXG nvmts0d4n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+10.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MJE182G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCAD4FDD0532469&compId=MJE172G.PDF?ci_sign=3c6dadb8fcbe5fae378ccaa3a3322e208487e487
MJE182G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SP14P5X pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE883C93FC1BDE28&compId=NC7SP14.pdf?ci_sign=c7389bd3726a6da01fe4ae6a64e92fbaf2d2a548
NC7SP14P5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7WP14P6X NC7WP14-D.PDF
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS5D9N08HTWG nttfs5d9n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 535A; 100W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Case: WDFN8
Gate charge: 31nC
On-state resistance: 5.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 84A
Power dissipation: 100W
Kind of channel: enhancement
Pulsed drain current: 535A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14504BDTG mc14504b-d.pdf
MC14504BDTG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14538BDR2G mc14538b-d.pdf
MC14538BDR2G
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Mounting: SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Case: SO16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSR30CM3T5G nsr30cm3t5g-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Case: SOT723
Load current: 0.2A
Max. forward voltage: 0.8V
Mounting: SMD
Max. off-state voltage: 30V
Type of diode: Schottky switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE5852G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1067ACF016469&compId=MJE5852.PDF?ci_sign=4b37f3bd1f970100f0cead7caec4bf795e807558
MJE5852G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: TO220AB
Current gain: 15
Mounting: THT
Kind of package: tube
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
MOC3083SVM moc3083m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MOC3083VM moc3083m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRM120ET1G mbrm120e-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape
Case: POWERMITE
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.54V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRM120LT3G mbrm120l-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Case: DO216AA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS004N10MCT1G nvmfws004n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 138A
Pulsed drain current: 900A
Power dissipation: 82W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS0D5N04XMT1G nvmfws0d5n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 414A; Idm: 900A; 163W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 414A
Pulsed drain current: 900A
Power dissipation: 163W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 520µΩ
Mounting: SMD
Gate charge: 97.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS0D7N04XMT1G nvmfws0d7n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 323A; Idm: 900A; 134W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 323A
Pulsed drain current: 900A
Power dissipation: 134W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 71.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS2D3N04XMT1G nvmfws2d3n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS2D3P04M8LT1G nvmfs2d3p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS3D0P04M8LT1G nvmfs3d0p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2631SD pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACACB8ECA9CB3E27&compId=HCPL2631SD.pdf?ci_sign=44300f5e39df52fced2333a5ad8027c2de961698
HCPL2631SD
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC139MTCX ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw
74AC139MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
119+0.6 EUR
140+0.51 EUR
202+0.35 EUR
213+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5932BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5932BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 4203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
230+0.31 EUR
266+0.27 EUR
417+0.17 EUR
506+0.14 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5932BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSV1045V fsv1045v-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5945BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMA5945BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5945BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5945BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMA5945BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2464 2465 2466 2467 2468 2469 2470 2471 2472 2473 2474 2478  [ Nächste Seite >> ]