Foto | Bezeichnung | Hersteller | Beschreibung |
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HCPL0453R2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; 1Mbps; SOIC8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: SOIC8 Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -0.5...20V Manufacturer series: HCPL0453 |
Produkt ist nicht verfügbar |
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SZ1SMA5927BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SZ1SMB5918BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDS4501h | ONSEMI |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8 Mounting: SMD Drain current: 9.3/-5.6A Gate-source voltage: ±20/±8V Gate charge: 21/27nC Kind of package: reel; tape Technology: PowerTrench® Type of transistor: N/P-MOSFET Kind of channel: enhancement Drain-source voltage: 30/-20V On-state resistance: 80/29mΩ Polarisation: unipolar Case: SO8 Power dissipation: 2.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMSZ5249B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 19V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 19V Manufacturer series: MMSZ52xxB |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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MPSA14G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2114LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2114LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMMUN2114LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCPF400N80Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.9A Power dissipation: 35.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33174DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.8MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Case: SO14 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Number of channels: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC33174DTBR2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.8MHz; TSSOP14; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Case: TSSOP14 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 6.5mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC33174VDR2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.8MHz; SO14; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Case: SO14 Slew rate: 2.1V/μs Operating temperature: -40...125°C Input offset voltage: 6.5mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MUR180ERLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41 Mounting: THT Case: DO41 Type of diode: rectifying Semiconductor structure: single diode Load current: 1A Max. off-state voltage: 0.8kV Kind of package: reel; tape |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD2836LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOT23; reel,tape Case: SOT23 Semiconductor structure: common anode; double Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: small signal Type of diode: switching Reverse recovery time: 4ns Load current: 0.1A Max. off-state voltage: 75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MMBD2835LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 35V; 0.1A; SOT23; reel,tape Case: SOT23 Semiconductor structure: common anode; double Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: small signal Type of diode: switching Load current: 0.1A Max. off-state voltage: 35V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBD2837LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW Case: SOT23 Semiconductor structure: common cathode; double Mounting: SMD Kind of package: reel; tape Type of diode: switching Capacitance: 4pF Reverse recovery time: 4ns Load current: 0.15A Power dissipation: 0.225W Max. load current: 0.45A Max. forward voltage: 1.2V Max. off-state voltage: 75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MMBD2838LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; reel,tape Case: SOT23 Semiconductor structure: common cathode; double Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: small signal Type of diode: switching Reverse recovery time: 4ns Load current: 0.15A Max. off-state voltage: 75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SMMBD2837LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; reel,tape Case: SOT23 Application: automotive industry Semiconductor structure: common cathode; double Mounting: SMD Kind of package: reel; tape Type of diode: switching Reverse recovery time: 4ns Load current: 0.15A Max. forward impulse current: 450mA Max. forward voltage: 1.2V Max. off-state voltage: 75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTHL185N60S5H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 116W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 25nC Pulsed drain current: 53A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMT185N60S5H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 116W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 25nC Pulsed drain current: 53A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BC846ALT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Current gain: 110 Mounting: SMD Frequency: 100MHz Application: general purpose |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C020NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 370A Pulsed drain current: 900A Power dissipation: 161W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 670µΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMFS4C022NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 136A Pulsed drain current: 900A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 20.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PZTA42T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 433 Stücke: Lieferzeit 14-21 Tag (e) |
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SPZTA42T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: tape Frequency: 50MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCD1300N80Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK Mounting: SMD Polarisation: unipolar Gate charge: 16.2nC On-state resistance: 1.3Ω Drain current: 4A Pulsed drain current: 12A Gate-source voltage: ±20V Power dissipation: 52W Drain-source voltage: 800V Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCV4299CD133R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD Mounting: SMD Type of integrated circuit: voltage regulator Output voltage: 3.3V Output current: 0.15A Number of channels: 1 Application: automotive industry Kind of package: reel; tape Case: SO8 Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX84C10LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 0.2µA |
auf Bestellung 6096 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ10T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
auf Bestellung 5830 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5241B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SZMMSZ5241BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2SB1123S-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1012ST100T3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 0.1MHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 11Ω Operating voltage: 8.5...10V DC Duty cycle factor: 0...72% Kind of package: reel; tape Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NCP1072STAT3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 59...71kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP1072STBT3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 90...110kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MUN5214DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 6100 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5214DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5214T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Kind of transistor: BRT Case: SC70; SOT323 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Application: automotive industry Polarisation: bipolar |
auf Bestellung 2730 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14517BDWR2G | ONSEMI |
![]() Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB Type of integrated circuit: digital Kind of integrated circuit: 64bit; static shift register Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO16WB Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCV59745AMW180TAG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Number of channels: 1 Output voltage: 1.8V Output current: 3A Application: automotive industry Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BSS64LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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RB751V40T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape |
auf Bestellung 5747 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVRB751V40T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NLU2G17AMX1TCG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: ULLGA6 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS Operating temperature: -55...125°C Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NLX2G17AMX1TCG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; ULLGA6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: ULLGA6 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NXV08A170DB2 | ONSEMI |
![]() Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V Drain-source voltage: 80V Drain current: 200A Case: APM12-CBA Gate-source voltage: ±20V On-state resistance: 2.4mΩ Kind of package: in-tray Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: THT Topology: MOSFET half-bridge Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
1N5369BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC100EP11DTG | ONSEMI |
![]() Description: IC: digital; fanout buffer; PECL; SMD; TSSOP8; -40÷85°C; OUT: 2; 3GHz Type of integrated circuit: digital Kind of integrated circuit: fanout buffer Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Number of outputs: 2 Frequency: 3GHz Technology: PECL Manufacturer series: 100EP |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2133LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.246W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMMUN2133LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.4W Collector-emitter voltage: 50V Current gain: 80...140 Quantity in set/package: 3000pcs. Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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VEONSVMMUN2133LT1G | ONSEMI |
Category: Unclassified Description: VEONSVMMUN2133LT1G |
auf Bestellung 993000 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1203P60G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Mounting: THT Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 7.8...16V DC Kind of package: tube Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
2SB1201S-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.8W Case: DPAK Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMSZ4684T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ4xxT1G Leakage current: 7.5µA |
auf Bestellung 5655 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF320N06L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhancement Technology: PowerTrench® Features of semiconductor devices: logic level Pulsed drain current: 84A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NLSX4401MU1TCG | ONSEMI |
![]() Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Supply voltage: 1.5...5.5V DC Mounting: SMD Case: uDFN6 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 1 Number of outputs: 1 Integrated circuit features: auto-direction sensing Frequency: 24MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBRA140T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. load current: 2A Max. forward voltage: 0.74V |
auf Bestellung 5809 Stücke: Lieferzeit 14-21 Tag (e) |
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TCA0372BDWR2G | ONSEMI |
![]() Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVUB1620CTRT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common anode; double Case: D2PAK Max. load current: 16A Kind of package: reel; tape Max. forward voltage: 1.2V Max. forward impulse current: 100A Reverse recovery time: 85ns Application: automotive industry |
Produkt ist nicht verfügbar |
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HCPL0453R2 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...20V
Manufacturer series: HCPL0453
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...20V
Manufacturer series: HCPL0453
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZ1SMA5927BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SZ1SMB5918BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDS4501h |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Mounting: SMD
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Gate charge: 21/27nC
Kind of package: reel; tape
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Kind of channel: enhancement
Drain-source voltage: 30/-20V
On-state resistance: 80/29mΩ
Polarisation: unipolar
Case: SO8
Power dissipation: 2.5W
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Mounting: SMD
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Gate charge: 21/27nC
Kind of package: reel; tape
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Kind of channel: enhancement
Drain-source voltage: 30/-20V
On-state resistance: 80/29mΩ
Polarisation: unipolar
Case: SO8
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5249B |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 19V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 19V
Manufacturer series: MMSZ52xxB
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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160+ | 0.44 EUR |
MPSA14G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MMUN2114LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
715+ | 0.1 EUR |
1000+ | 0.072 EUR |
1158+ | 0.062 EUR |
1598+ | 0.045 EUR |
2451+ | 0.029 EUR |
MMUN2114LT3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2114LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCPF400N80Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.65 EUR |
24+ | 3.07 EUR |
26+ | 2.82 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
MC33174DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33174DTBR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; TSSOP14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; TSSOP14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33174VDR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR180ERLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41
Mounting: THT
Case: DO41
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41
Mounting: THT
Case: DO41
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
208+ | 0.34 EUR |
277+ | 0.26 EUR |
293+ | 0.24 EUR |
500+ | 0.23 EUR |
MMBD2836LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common anode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. off-state voltage: 75V
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common anode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. off-state voltage: 75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD2835LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common anode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.1A
Max. off-state voltage: 35V
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common anode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.1A
Max. off-state voltage: 35V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD2837LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.15A
Power dissipation: 0.225W
Max. load current: 0.45A
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.15A
Power dissipation: 0.225W
Max. load current: 0.45A
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD2838LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. off-state voltage: 75V
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. off-state voltage: 75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMBD2837LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; reel,tape
Case: SOT23
Application: automotive industry
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. forward impulse current: 450mA
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; reel,tape
Case: SOT23
Application: automotive industry
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. forward impulse current: 450mA
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
Produkt ist nicht verfügbar
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NTHL185N60S5H |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
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NTMT185N60S5H |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
Produkt ist nicht verfügbar
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BC846ALT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 110
Mounting: SMD
Frequency: 100MHz
Application: general purpose
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 110
Mounting: SMD
Frequency: 100MHz
Application: general purpose
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.019 EUR |
NTMFS4C020NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS4C022NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 136A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 20.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 136A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 20.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PZTA42T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
221+ | 0.32 EUR |
295+ | 0.24 EUR |
332+ | 0.22 EUR |
433+ | 0.17 EUR |
SPZTA42T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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FCD1300N80Z |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NCV4299CD133R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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BZX84C10LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.2µA
auf Bestellung 6096 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
608+ | 0.12 EUR |
1000+ | 0.072 EUR |
1480+ | 0.048 EUR |
1749+ | 0.041 EUR |
2165+ | 0.033 EUR |
2526+ | 0.028 EUR |
3031+ | 0.024 EUR |
3206+ | 0.022 EUR |
MMSZ10T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 5830 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
695+ | 0.1 EUR |
1197+ | 0.06 EUR |
1511+ | 0.047 EUR |
2370+ | 0.03 EUR |
2618+ | 0.027 EUR |
2733+ | 0.026 EUR |
2874+ | 0.025 EUR |
MMSZ5241B |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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SZMMSZ5241BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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2SB1123S-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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NCP1012ST100T3G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
Produkt ist nicht verfügbar
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NCP1072STAT3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCP1072STBT3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MUN5214DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 6100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
432+ | 0.17 EUR |
754+ | 0.095 EUR |
1819+ | 0.039 EUR |
1924+ | 0.037 EUR |
SMUN5214DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
532+ | 0.13 EUR |
SMUN5214T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Kind of transistor: BRT
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Kind of transistor: BRT
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
417+ | 0.17 EUR |
481+ | 0.15 EUR |
695+ | 0.1 EUR |
826+ | 0.087 EUR |
1348+ | 0.053 EUR |
1429+ | 0.05 EUR |
MC14517BDWR2G |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV59745AMW180TAG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS64LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
516+ | 0.14 EUR |
747+ | 0.096 EUR |
867+ | 0.083 EUR |
1737+ | 0.041 EUR |
1800+ | 0.04 EUR |
RB751V40T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
auf Bestellung 5747 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
594+ | 0.12 EUR |
848+ | 0.084 EUR |
1087+ | 0.066 EUR |
1226+ | 0.058 EUR |
1645+ | 0.043 EUR |
2273+ | 0.031 EUR |
2404+ | 0.03 EUR |
3000+ | 0.029 EUR |
NSVRB751V40T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
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NLU2G17AMX1TCG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -55...125°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -55...125°C
Quiescent current: 40µA
Produkt ist nicht verfügbar
Im Einkaufswagen
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NLX2G17AMX1TCG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; ULLGA6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; ULLGA6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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NXV08A170DB2 |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: THT
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: THT
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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1N5369BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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MC100EP11DTG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; PECL; SMD; TSSOP8; -40÷85°C; OUT: 2; 3GHz
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Number of outputs: 2
Frequency: 3GHz
Technology: PECL
Manufacturer series: 100EP
Category: Level translators
Description: IC: digital; fanout buffer; PECL; SMD; TSSOP8; -40÷85°C; OUT: 2; 3GHz
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Number of outputs: 2
Frequency: 3GHz
Technology: PECL
Manufacturer series: 100EP
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 10.05 EUR |
MMUN2133LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
NSVMMUN2133LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.4W
Collector-emitter voltage: 50V
Current gain: 80...140
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.4W
Collector-emitter voltage: 50V
Current gain: 80...140
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VEONSVMMUN2133LT1G |
auf Bestellung 993000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.02 EUR |
NCP1203P60G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SB1201S-TL-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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MMSZ4684T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 7.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 7.5µA
auf Bestellung 5655 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
650+ | 0.11 EUR |
1009+ | 0.071 EUR |
1226+ | 0.058 EUR |
2017+ | 0.035 EUR |
2223+ | 0.032 EUR |
FDPF320N06L |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Pulsed drain current: 84A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Pulsed drain current: 84A
Produkt ist nicht verfügbar
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NLSX4401MU1TCG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 24MHz
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 24MHz
Produkt ist nicht verfügbar
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MBRA140T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 2A
Max. forward voltage: 0.74V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 2A
Max. forward voltage: 0.74V
auf Bestellung 5809 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
323+ | 0.22 EUR |
397+ | 0.18 EUR |
618+ | 0.12 EUR |
650+ | 0.11 EUR |
TCA0372BDWR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.04 EUR |
NRVUB1620CTRT4G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: D2PAK
Max. load current: 16A
Kind of package: reel; tape
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Reverse recovery time: 85ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: D2PAK
Max. load current: 16A
Kind of package: reel; tape
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Reverse recovery time: 85ns
Application: automotive industry
Produkt ist nicht verfügbar
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