MUN5214DW1T1G ONSEMI
Hersteller: ONSEMICategory: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1195+ | 0.06 EUR |
| 1325+ | 0.054 EUR |
| 1820+ | 0.039 EUR |
| 1925+ | 0.037 EUR |
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Technische Details MUN5214DW1T1G ONSEMI
Description: TRANS 2NPN PREBIAS 0.25W SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote MUN5214DW1T1G nach Preis ab 0.037 EUR bis 0.56 EUR
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MUN5214DW1T1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5214DW1T1G | Hersteller : onsemi |
Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5214DW1T1G | Hersteller : onsemi |
Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 14262 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5214DW1T1G | Hersteller : onsemi |
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V |
auf Bestellung 84026 Stücke: Lieferzeit 14-28 Tag (e) |
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MUN5214DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5214DW1T1G Produktcode: 56814 |
Transistoren > Bipolar-Transistoren NPN |
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