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FDS4501h

FDS4501h onsemi

fds4501h-d.pdf
Hersteller: onsemi
Description: MOSFET N/P-CH 30V/20V 9.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.95 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDS4501h onsemi

Description: MOSFET N/P-CH 30V/20V 9.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A, Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

Weitere Produktangebote FDS4501h nach Preis ab 0.99 EUR bis 3.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FDS4501h FDS4501h Fairchild Semiconductor FAIRS34628-1.pdf?t.download=true&u=5oefqw Description: MOSFET N/P-CH 30V/20V 9.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 37590 Stücke:
Lieferzeit 10-14 Tag (e)
296+1.8 EUR
Mindestbestellmenge: 296 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS4501h FDS4501h onsemi / Fairchild FDS4501H_D-2312787.pdf MOSFET SO-8 COMP N-P-CH
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.34 EUR
10+2.18 EUR
100+1.92 EUR
1000+1.75 EUR
2500+0.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS4501h FDS4501h onsemi fds4501h-d.pdf Description: MOSFET N/P-CH 30V/20V 9.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
auf Bestellung 4926 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.44 EUR
10+2.19 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.06 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS4501h FAIRCHILD FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf 09+
auf Bestellung 30018 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDS4501h FAIRS34628-1.pdf?t.download=true&u=5oefqw
FDS4501h
Hersteller: Fairchild Semiconductor
Description: MOSFET N/P-CH 30V/20V 9.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 37590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
296+1.8 EUR
Mindestbestellmenge: 296 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS4501h FDS4501H_D-2312787.pdf
FDS4501h
Hersteller: onsemi / Fairchild
MOSFET SO-8 COMP N-P-CH
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.34 EUR
10+2.18 EUR
100+1.92 EUR
1000+1.75 EUR
2500+0.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS4501h fds4501h-d.pdf
FDS4501h
Hersteller: onsemi
Description: MOSFET N/P-CH 30V/20V 9.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
auf Bestellung 4926 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.44 EUR
10+2.19 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.06 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS4501h FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf
Hersteller: FAIRCHILD
09+
auf Bestellung 30018 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH