FCPF400N80Z Fairchild
Hersteller: Fairchild
N-MOSFET 800V 11A 400mΩ 35.7W FCPF400N80Z Fairchild TFCPF400N80Z
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 5.25 EUR |
Produktrezensionen
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Technische Details FCPF400N80Z Fairchild
Description: MOSFET N-CH 800V 11A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V, Power Dissipation (Max): 35.7W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.1mA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V.
Weitere Produktangebote FCPF400N80Z nach Preis ab 2.65 EUR bis 8.71 EUR
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FCPF400N80Z | onsemi |
Description: MOSFET N-CH 800V 11A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
auf Bestellung 1032 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF400N80Z | onsemi |
MOSFETs N-Channel SuperFET II MOSFET |
auf Bestellung 4962 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCPF400N80Z |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 800V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 1032 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.27 EUR |
| 50+ | 3.77 EUR |
| 100+ | 3.43 EUR |
| 500+ | 2.84 EUR |
| 1000+ | 2.65 EUR |
| FCPF400N80Z |
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Hersteller: onsemi
MOSFETs N-Channel SuperFET II MOSFET
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.71 EUR |
| 10+ | 5.68 EUR |
| 100+ | 4.45 EUR |
| 500+ | 3.06 EUR |