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NCV551SN50T1G ONSEMI ncp551-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.15A
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NCP716BCSN500T1G ONSEMI ncp716bc-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP716BC
Operating temperature: -40...125°C
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...24V
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.955V
Produkt ist nicht verfügbar
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NCV4295CSN50T1G ONSEMI ncv4295c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
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NCV8711ASN500T1G ONSEMI ncv8711-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.1A
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NCV8730ASN500T1G ONSEMI ncv8730-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.15A
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NCV4296-2CSN50T1G ONSEMI ncv4296-2c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
Produkt ist nicht verfügbar
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SZ1SMB5927BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCS1002DR2G ONSEMI ncs1002-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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FXL6408UMX ONSEMI fxl6408-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷3.6VDC; SMD; UMLP16; Ch: 8; 1.5uA
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: UMLP16
Operating temperature: -40...85°C
Number of channels: 8
Kind of package: reel; tape
Quiescent current: 1.5µA
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74VHCT74AMTCX 74VHCT74AMTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B3D387B89820&compId=74VHCT74A-D.pdf?ci_sign=35398f135776fa74a3fd89d7c6cfc754fdcffa30 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Technology: CMOS
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MC74VHCT74ADR2G MC74VHCT74ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F911820&compId=MC74VHCT74A-D.pdf?ci_sign=b7cf29ac1936e4e6c2a8ecdeedadbaa72c0437af Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Technology: CMOS
Produkt ist nicht verfügbar
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MC74VHCT74ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633B86CC280D3&compId=MC74VHCT74A-D.pdf?ci_sign=fe750665f43ed9f0a62051d624ec45e224a7689f Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; VHCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: VHCT
Manufacturer series: VHCT
Number of inputs: 4
Technology: CMOS; TTL
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FDP120N10 ONSEMI fdp120n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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FDB120N10 ONSEMI fdb120n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP100N10 ONSEMI fdp100n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 300A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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MB4S MB4S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD77C3A0DB29E28&compId=MB6S.pdf?ci_sign=010f7b669d2b1548d1b04ea604e8de8109664952 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
139+0.52 EUR
224+0.32 EUR
332+0.22 EUR
353+0.2 EUR
Mindestbestellmenge: 103
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NL37WZ07USG ONSEMI nl37wz07-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; SMD; US8; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
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MC74LCX573DTR2G MC74LCX573DTR2G ONSEMI MC74LCX573-D%20%28Rev.March%202008%29.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
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NL17SZ17DFT2G NL17SZ17DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9980C7&compId=NL17SZ17DFT2G.pdf?ci_sign=f856f1440f37861916bb71251ff9f19a7ddfc4af Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Number of channels: 1
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Case: SC88A
auf Bestellung 1941 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
695+0.1 EUR
758+0.094 EUR
845+0.085 EUR
973+0.074 EUR
1060+0.067 EUR
1713+0.042 EUR
1812+0.039 EUR
Mindestbestellmenge: 417
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NL17SZ17DFT2G-Q ONSEMI nl17sz17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.04 EUR
Mindestbestellmenge: 3000
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NTMFS008N12MCT1G ONSEMI ntmfs008n12mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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MRA4005T3G MRA4005T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 3777 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
481+0.15 EUR
637+0.11 EUR
714+0.1 EUR
928+0.077 EUR
981+0.073 EUR
1000+0.072 EUR
2000+0.07 EUR
Mindestbestellmenge: 358
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MBR0520L MBR0520L ONSEMI pVersion=0046&contRep=ZT&docId=E20E078571710BF1A303005056AB0C4F&compId=MBR0520L.pdf?ci_sign=e7310b509a77c1d9d841d4aa129db63a5927b2f8 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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MC74ACT273DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AA252D1A0D3&compId=MC74AC273-D.pdf?ci_sign=3ecebe29d8d884f91b1ca82b9582418f72a9f82c Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
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MC74ACT273DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62ADFEF56C0D3&compId=MC74AC273-D.pdf?ci_sign=9cd9cae301874d8c90a6fd0448e57e7b447bb848 Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SO20WB; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
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NRVHP160SFT3G ONSEMI nhp160sf-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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NCS20084DR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCS20084DTBR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCV20084DR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCV20084DTBR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NTMFSC011N08M7 ONSEMI ntmfsc011n08m7-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSZ4704T1G MMSZ4704T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
auf Bestellung 3095 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
962+0.074 EUR
1202+0.059 EUR
1731+0.041 EUR
2326+0.031 EUR
2552+0.028 EUR
Mindestbestellmenge: 715
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SZMMSZ4704T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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BAV70LT3G BAV70LT3G ONSEMI bav70lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
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SBAV70LT3G SBAV70LT3G ONSEMI bav70lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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1N4743ATR 1N4743ATR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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1N4743A 1N4743A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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FJB102TM FJB102TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81ED4911D44469&compId=FJB102TM.pdf?ci_sign=113d37b1ecfd9a72897dc00d41f0a81a18b1c1c2 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
auf Bestellung 516 Stücke:
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89+0.81 EUR
94+0.76 EUR
250+0.73 EUR
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FCH099N65S3-F155 ONSEMI fch099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 75A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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FCB099N65S3 ONSEMI fcb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCB199N65S3 ONSEMI fcb199n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 35A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH029N65S3-F155 ONSEMI fch029n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 201nC
Pulsed drain current: 200A
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NVB099N65S3 ONSEMI nvb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL019N65S3H ONSEMI nthl019n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
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FCMT099N65S3 ONSEMI fcmt099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF099N65S3 ONSEMI fcpf099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
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NTZD5110NT1G NTZD5110NT1G ONSEMI ntzd5110n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BYW80-200G BYW80-200G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d description Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
auf Bestellung 1366 Stücke:
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79+0.92 EUR
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88+0.82 EUR
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NCP1336BDR2G NCP1336BDR2G ONSEMI ncp1336-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
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NCP1338DR2G ONSEMI ncp1338-d.pdf ONSM-S-A0011139603-1.pdf?t.download=true&u=ovmfp3 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
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MJE15029G MJE15029G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 44 Stücke:
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40+1.83 EUR
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LMV931SN3T1G ONSEMI lmv931-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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LMV931SQ3T2G ONSEMI lmv931-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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NCP163ASN330T1G NCP163ASN330T1G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
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196+0.37 EUR
228+0.31 EUR
281+0.25 EUR
298+0.24 EUR
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NB3M8302CDR2G NB3M8302CDR2G ONSEMI nb3m8302c-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
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NB3M8302CDG ONSEMI nb3m8302c-d.pdf Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 490 Stücke:
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Mindestbestellmenge: 98
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SZMMSZ4680T1G SZMMSZ4680T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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NTLJF3117PT1G ONSEMI ntljf3117p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMT064N65S3H ONSEMI ntmt064n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUN5211T1G MUN5211T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C2091FB92040CE&compId=MUN2211.PDF?ci_sign=414c3c3e3685fa2f362efb0e2f3ec37af6d380b4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 544 Stücke:
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NCV551SN50T1G ncp551-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.15A
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NCP716BCSN500T1G ncp716bc-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP716BC
Operating temperature: -40...125°C
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...24V
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.955V
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NCV4295CSN50T1G ncv4295c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
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NCV8711ASN500T1G ncv8711-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.1A
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NCV8730ASN500T1G ncv8730-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.15A
Produkt ist nicht verfügbar
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NCV4296-2CSN50T1G ncv4296-2c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
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SZ1SMB5927BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCS1002DR2G ncs1002-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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FXL6408UMX fxl6408-d.pdf
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷3.6VDC; SMD; UMLP16; Ch: 8; 1.5uA
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: UMLP16
Operating temperature: -40...85°C
Number of channels: 8
Kind of package: reel; tape
Quiescent current: 1.5µA
Produkt ist nicht verfügbar
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74VHCT74AMTCX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B3D387B89820&compId=74VHCT74A-D.pdf?ci_sign=35398f135776fa74a3fd89d7c6cfc754fdcffa30
74VHCT74AMTCX
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Technology: CMOS
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MC74VHCT74ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F911820&compId=MC74VHCT74A-D.pdf?ci_sign=b7cf29ac1936e4e6c2a8ecdeedadbaa72c0437af
MC74VHCT74ADR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Technology: CMOS
Produkt ist nicht verfügbar
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MC74VHCT74ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633B86CC280D3&compId=MC74VHCT74A-D.pdf?ci_sign=fe750665f43ed9f0a62051d624ec45e224a7689f
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; VHCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: VHCT
Manufacturer series: VHCT
Number of inputs: 4
Technology: CMOS; TTL
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FDP120N10 fdp120n10-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDB120N10 fdb120n10-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDP100N10 fdp100n10-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 300A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MB4S pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD77C3A0DB29E28&compId=MB6S.pdf?ci_sign=010f7b669d2b1548d1b04ea604e8de8109664952
MB4S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
139+0.52 EUR
224+0.32 EUR
332+0.22 EUR
353+0.2 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
NL37WZ07USG nl37wz07-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; SMD; US8; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
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MC74LCX573DTR2G MC74LCX573-D%20%28Rev.March%202008%29.pdf
MC74LCX573DTR2G
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Produkt ist nicht verfügbar
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NL17SZ17DFT2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9980C7&compId=NL17SZ17DFT2G.pdf?ci_sign=f856f1440f37861916bb71251ff9f19a7ddfc4af
NL17SZ17DFT2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Number of channels: 1
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Case: SC88A
auf Bestellung 1941 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
695+0.1 EUR
758+0.094 EUR
845+0.085 EUR
973+0.074 EUR
1060+0.067 EUR
1713+0.042 EUR
1812+0.039 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
NL17SZ17DFT2G-Q nl17sz17-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS008N12MCT1G ntmfs008n12mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MRA4005T3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f
MRA4005T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 3777 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
637+0.11 EUR
714+0.1 EUR
928+0.077 EUR
981+0.073 EUR
1000+0.072 EUR
2000+0.07 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
MBR0520L pVersion=0046&contRep=ZT&docId=E20E078571710BF1A303005056AB0C4F&compId=MBR0520L.pdf?ci_sign=e7310b509a77c1d9d841d4aa129db63a5927b2f8
MBR0520L
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT273DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AA252D1A0D3&compId=MC74AC273-D.pdf?ci_sign=3ecebe29d8d884f91b1ca82b9582418f72a9f82c
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
Produkt ist nicht verfügbar
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MC74ACT273DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62ADFEF56C0D3&compId=MC74AC273-D.pdf?ci_sign=9cd9cae301874d8c90a6fd0448e57e7b447bb848
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SO20WB; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
Produkt ist nicht verfügbar
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NRVHP160SFT3G nhp160sf-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCS20084DR2G ncs2008-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
Produkt ist nicht verfügbar
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NCS20084DTBR2G ncs2008-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
Produkt ist nicht verfügbar
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NCV20084DR2G ncs2008-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
Produkt ist nicht verfügbar
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NCV20084DTBR2G ncs2008-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
Produkt ist nicht verfügbar
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NTMFSC011N08M7 ntmfsc011n08m7-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSZ4704T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4704T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
auf Bestellung 3095 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
962+0.074 EUR
1202+0.059 EUR
1731+0.041 EUR
2326+0.031 EUR
2552+0.028 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
SZMMSZ4704T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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BAV70LT3G bav70lt1-d.pdf
BAV70LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
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SBAV70LT3G bav70lt1-d.pdf
SBAV70LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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1N4743ATR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4743ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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1N4743A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4743A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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FJB102TM pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81ED4911D44469&compId=FJB102TM.pdf?ci_sign=113d37b1ecfd9a72897dc00d41f0a81a18b1c1c2
FJB102TM
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
60+1.2 EUR
89+0.81 EUR
94+0.76 EUR
250+0.73 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
FCH099N65S3-F155 fch099n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 75A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCB099N65S3 fcb099n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCB199N65S3 fcb199n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 35A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH029N65S3-F155 fch029n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 201nC
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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NVB099N65S3 nvb099n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL019N65S3H nthl019n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
Produkt ist nicht verfügbar
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FCMT099N65S3 fcmt099n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF099N65S3 fcpf099n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTZD5110NT1G ntzd5110n-d.pdf
NTZD5110NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BYW80-200G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d
BYW80-200G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
auf Bestellung 1366 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
79+0.92 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 67
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NCP1336BDR2G ncp1336-d.pdf
NCP1336BDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Produkt ist nicht verfügbar
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NCP1338DR2G ncp1338-d.pdf ONSM-S-A0011139603-1.pdf?t.download=true&u=ovmfp3
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Produkt ist nicht verfügbar
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MJE15029G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf
MJE15029G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
40+1.83 EUR
44+1.63 EUR
Mindestbestellmenge: 31
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LMV931SN3T1G lmv931-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
Produkt ist nicht verfügbar
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LMV931SQ3T2G lmv931-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
Produkt ist nicht verfügbar
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NCP163ASN330T1G ncp163-d.pdf
NCP163ASN330T1G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
auf Bestellung 1349 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
174+0.41 EUR
196+0.37 EUR
228+0.31 EUR
281+0.25 EUR
298+0.24 EUR
Mindestbestellmenge: 143
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NB3M8302CDR2G nb3m8302c-d.pdf
NB3M8302CDR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
Produkt ist nicht verfügbar
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NB3M8302CDG nb3m8302c-d.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
98+2.67 EUR
196+2.4 EUR
Mindestbestellmenge: 98
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SZMMSZ4680T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
SZMMSZ4680T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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NTLJF3117PT1G ntljf3117p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMT064N65S3H ntmt064n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MUN5211T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C2091FB92040CE&compId=MUN2211.PDF?ci_sign=414c3c3e3685fa2f362efb0e2f3ec37af6d380b4
MUN5211T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
544+0.13 EUR
Mindestbestellmenge: 417
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