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MMBT6427 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81235CE7AB4469&compId=MMBT6427.pdf?ci_sign=3e8f3aae67c757ef3522f76ffbee8adce67c84f4 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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MMBT6427LT1G MMBT6427LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA816127D498E469&compId=MMBT6427LT1G.PDF?ci_sign=d0c5c779fa98f5611f53ed153992e3aa03700666 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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SMMBT6427LT1G ONSEMI mmbt6427lt1-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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HMHA2801AR2 HMHA2801AR2 ONSEMI HMHA281_2801_Rev6_Aug2018.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: HMHA2801
auf Bestellung 307 Stücke:
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90+0.8 EUR
130+0.55 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 90
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HMHA2801AR2V HMHA2801AR2V ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF1B896BFE16749&compId=HMHA2801AR2V.pdf?ci_sign=fa8c8ad1981416e3c35acbd0e5729d175a4d89f9 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: HMHA2801
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
124+0.58 EUR
195+0.37 EUR
206+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 93
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FDS6930A FDS6930A ONSEMI FAIRS26730-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Polarisation: unipolar
On-state resistance: 68mΩ
Power dissipation: 2W
Drain current: 5.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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LM1117MPX-18NOPB ONSEMI lm1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LM1117MPX-33NOPB ONSEMI lm1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LM1117MPX-25NOPB ONSEMI lm1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.8A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Type of integrated circuit: voltage regulator
Output current: 0.8A
Number of channels: 1
Output voltage: 2.5V
Produkt ist nicht verfügbar
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MUN5135DW1T1G MUN5135DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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NSVMUN5135DW1T1G ONSEMI dta123jd-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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BAS20HT1G BAS20HT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDFF4AE4E615820&compId=BAS20H.pdf?ci_sign=376998da64712a68a14cb8acef3c72ff2198d3f1 Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3085 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
807+0.089 EUR
873+0.082 EUR
1214+0.059 EUR
1389+0.051 EUR
3085+0.023 EUR
Mindestbestellmenge: 715
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SBAS20HT1G SBAS20HT1G ONSEMI bas20ht1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVBAS20LT3G ONSEMI bas19lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MARBAS20HT1G ONSEMI Category: Unclassified
Description: MARBAS20HT1G
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.019 EUR
Mindestbestellmenge: 6000
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MARSBAS20HT1G ONSEMI Category: Unclassified
Description: MARSBAS20HT1G
auf Bestellung 321000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.019 EUR
Mindestbestellmenge: 6000
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SZ1SMB5919BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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SZBZX84C3V3LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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FOD817D3S ONSEMI FOD814-D.PDF Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.13 EUR
Mindestbestellmenge: 2000
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BZX79C7V5-T50A BZX79C7V5-T50A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.5V; Ammo Pack; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.5V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX79C
auf Bestellung 4977 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
676+0.11 EUR
875+0.082 EUR
1270+0.056 EUR
1737+0.041 EUR
1846+0.039 EUR
Mindestbestellmenge: 500
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MJF18004G MJF18004G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD13262C25B4469&compId=MJF18004.PDF?ci_sign=bae91d086035b5fd34ed3b6183f768027dda386a description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
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ESD7551N2T5G ESD7551N2T5G ONSEMI esd7551-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: CASE714AB; X2DFN2
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
auf Bestellung 727 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
417+0.17 EUR
506+0.14 EUR
727+0.099 EUR
Mindestbestellmenge: 334
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ESD9X5.0ST5G ESD9X5.0ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
auf Bestellung 9312 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
820+0.087 EUR
1191+0.06 EUR
1401+0.051 EUR
1725+0.041 EUR
2009+0.036 EUR
2428+0.029 EUR
2565+0.028 EUR
2660+0.027 EUR
Mindestbestellmenge: 556
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FDMS7672 ONSEMI FAIR-S-A0002363576-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C430NAFT1G ONSEMI nvmfs5c430n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 185A; Idm: 900A; 53W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 185A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB95B128F3F46140C7&compId=NVMFS5C430NL.PDF?ci_sign=232e342c67375904b14e46405821689e0fda3ece Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C430NWFAFT1G ONSEMI nvmfs5c430n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 185A; Idm: 900A; 53W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 185A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSD4148T1G MMSD4148T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE795B1AFA815474747&compId=MMSD4148T1.PDF?ci_sign=306379cd1a92ce5cfad82aad87b1c9e9b2dbe91e Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 1A; 425mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.425W
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
auf Bestellung 8620 Stücke:
Lieferzeit 14-21 Tag (e)
776+0.092 EUR
1924+0.037 EUR
2174+0.033 EUR
2305+0.031 EUR
2488+0.029 EUR
2646+0.027 EUR
2825+0.025 EUR
4386+0.016 EUR
4630+0.015 EUR
Mindestbestellmenge: 776
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MMSD4148T3G MMSD4148T3G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.425W
Leakage current: 5µA
Capacitance: 4pF
Produkt ist nicht verfügbar
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SMMSD4148T1G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMMSD4148T3G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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H11L3M
+1
 		H11L3M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF1ACEA70684749&compId=H11L3M.pdf?ci_sign=97f44a85c16d691187ed05abc6c8245169bdce3d Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Case: DIP6
Mounting: THT
Kind of output: Schmitt trigger
Manufacturer series: H11LXM
Type of optocoupler: optocoupler
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Number of channels: 1
Insulation voltage: 4.17kV
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
95+0.76 EUR
103+0.69 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 59
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H11L2M H11L2M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC76CE73B3DE27&compId=H11L2M.pdf?ci_sign=afd07191113f7d108674ef17f17cf9cc7360db0c Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Case: DIP6
Mounting: THT
Kind of output: Schmitt trigger
Manufacturer series: H11LXM
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
126+0.57 EUR
159+0.45 EUR
168+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 80
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H11L3SR2M H11L3SR2M ONSEMI H11L3M-D.PDF Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Case: PDIP6
Mounting: SMD
Kind of output: gate; logic
Manufacturer series: H11L3
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
78+0.92 EUR
96+0.75 EUR
102+0.71 EUR
250+0.68 EUR
Mindestbestellmenge: 57
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FDMC3612-L701 ONSEMI fdmc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Kind of channel: enhancement
Mounting: SMD
Case: WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 212mΩ
Power dissipation: 35W
Drain current: 12A
Pulsed drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
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ESD9B3.3ST5G ESD9B3.3ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
auf Bestellung 13502 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
603+0.12 EUR
940+0.076 EUR
1134+0.063 EUR
1421+0.05 EUR
1774+0.04 EUR
1894+0.038 EUR
2000+0.037 EUR
Mindestbestellmenge: 417
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BZX84B6V8LT1G BZX84B6V8LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Leakage current: 2µA
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
Manufacturer series: BZX84B
Semiconductor structure: single diode
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
532+0.13 EUR
680+0.11 EUR
1067+0.067 EUR
2049+0.035 EUR
2167+0.033 EUR
2500+0.032 EUR
Mindestbestellmenge: 417
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2SC5242OTU ONSEMI fja4313-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BAT54M3T5G ONSEMI bat54m3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVBAT54M3T5G ONSEMI BAT54M3-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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KSB834WYTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE357BC2453C0D6&compId=KSB834W.PDF?ci_sign=5e08d8c1728eaed1043c581f02e74c574c58c4e5 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 1.5W; D2PAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.5W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 100...200
Frequency: 9MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: D2PAK
Produkt ist nicht verfügbar
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NCV33072DR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Produkt ist nicht verfügbar
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MC33071ADR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: single
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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NCS2003SN2T1G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: single
Produkt ist nicht verfügbar
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NCS20032DMR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Micro8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: Micro8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: dual
Produkt ist nicht verfügbar
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NCS20032DR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: dual
Produkt ist nicht verfügbar
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NCS20032DTBR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; TSSOP8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: TSSOP8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: dual
Produkt ist nicht verfügbar
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DF01S DF01S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
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FQA40N25 FQA40N25 ONSEMI fqa40n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 280W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.85 EUR
21+3.53 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
NV25640DTHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF95E0D5&compId=NV25080-D.pdf?ci_sign=23500e7460fb21c7ea53d0f4eba6107d94cd3659 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...150°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Access time: 40ns
Memory: 64kb EEPROM
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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NV25640DWHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF9720D5&compId=NV25080-D.pdf?ci_sign=b60380137d4770a8ff1cc9cb62ac1c59ee8a0801 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...150°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Access time: 40ns
Memory: 64kb EEPROM
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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MURA220T3G MURA220T3G ONSEMI mura215t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 40A
Features of semiconductor devices: ultrafast switching
auf Bestellung 4985 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
225+0.32 EUR
278+0.26 EUR
309+0.23 EUR
758+0.094 EUR
794+0.09 EUR
Mindestbestellmenge: 167
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NTTFS5C453NLTAG ONSEMI nttfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTTFS5C453NLTWG ONSEMI nttfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NVTFS5C453NLTAG ONSEMI nvtfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NVTFS5C453NLWFTAG ONSEMI nvtfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTH4L013N120M3S ONSEMI nth4l013n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTH4L014N120M3P ONSEMI nth4l014n120m3p-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
Produkt ist nicht verfügbar
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DTC114YM3T5G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DTC114YET1G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Current gain: 80...140
Produkt ist nicht verfügbar
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MMBT6427 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81235CE7AB4469&compId=MMBT6427.pdf?ci_sign=3e8f3aae67c757ef3522f76ffbee8adce67c84f4
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBT6427LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA816127D498E469&compId=MMBT6427LT1G.PDF?ci_sign=d0c5c779fa98f5611f53ed153992e3aa03700666
MMBT6427LT1G
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMMBT6427LT1G mmbt6427lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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HMHA2801AR2 HMHA281_2801_Rev6_Aug2018.pdf
HMHA2801AR2
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: HMHA2801
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
130+0.55 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 90
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HMHA2801AR2V pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF1B896BFE16749&compId=HMHA2801AR2V.pdf?ci_sign=fa8c8ad1981416e3c35acbd0e5729d175a4d89f9
HMHA2801AR2V
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: HMHA2801
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
124+0.58 EUR
195+0.37 EUR
206+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 93
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FDS6930A FAIRS26730-1.pdf?t.download=true&u=5oefqw
FDS6930A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Polarisation: unipolar
On-state resistance: 68mΩ
Power dissipation: 2W
Drain current: 5.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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LM1117MPX-18NOPB lm1117-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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LM1117MPX-33NOPB lm1117-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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LM1117MPX-25NOPB lm1117-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.8A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Type of integrated circuit: voltage regulator
Output current: 0.8A
Number of channels: 1
Output voltage: 2.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN5135DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4
MUN5135DW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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NSVMUN5135DW1T1G dta123jd-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS20HT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDFF4AE4E615820&compId=BAS20H.pdf?ci_sign=376998da64712a68a14cb8acef3c72ff2198d3f1
BAS20HT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
807+0.089 EUR
873+0.082 EUR
1214+0.059 EUR
1389+0.051 EUR
3085+0.023 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
SBAS20HT1G bas20ht1-d.pdf
SBAS20HT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBAS20LT3G bas19lt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MARBAS20HT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MARBAS20HT1G
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.019 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
MARSBAS20HT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MARSBAS20HT1G
auf Bestellung 321000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.019 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5919BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C3V3LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD817D3S FOD814-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.13 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
BZX79C7V5-T50A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
BZX79C7V5-T50A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.5V; Ammo Pack; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.5V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX79C
auf Bestellung 4977 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
875+0.082 EUR
1270+0.056 EUR
1737+0.041 EUR
1846+0.039 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MJF18004G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD13262C25B4469&compId=MJF18004.PDF?ci_sign=bae91d086035b5fd34ed3b6183f768027dda386a
MJF18004G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
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ESD7551N2T5G esd7551-d.pdf
ESD7551N2T5G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: CASE714AB; X2DFN2
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
auf Bestellung 727 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
417+0.17 EUR
506+0.14 EUR
727+0.099 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
ESD9X5.0ST5G esd9x3.3st5g-d.pdf
ESD9X5.0ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
auf Bestellung 9312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
820+0.087 EUR
1191+0.06 EUR
1401+0.051 EUR
1725+0.041 EUR
2009+0.036 EUR
2428+0.029 EUR
2565+0.028 EUR
2660+0.027 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7672 FAIR-S-A0002363576-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C430NAFT1G nvmfs5c430n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 185A; Idm: 900A; 53W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 185A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C430NLAFT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDB95B128F3F46140C7&compId=NVMFS5C430NL.PDF?ci_sign=232e342c67375904b14e46405821689e0fda3ece
NVMFS5C430NLAFT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C430NWFAFT1G nvmfs5c430n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 185A; Idm: 900A; 53W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 185A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSD4148T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE795B1AFA815474747&compId=MMSD4148T1.PDF?ci_sign=306379cd1a92ce5cfad82aad87b1c9e9b2dbe91e
MMSD4148T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 1A; 425mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.425W
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
auf Bestellung 8620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
776+0.092 EUR
1924+0.037 EUR
2174+0.033 EUR
2305+0.031 EUR
2488+0.029 EUR
2646+0.027 EUR
2825+0.025 EUR
4386+0.016 EUR
4630+0.015 EUR
Mindestbestellmenge: 776
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MMSD4148T3G mmsd4148t1-d.pdf
MMSD4148T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.425W
Leakage current: 5µA
Capacitance: 4pF
Produkt ist nicht verfügbar
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SMMSD4148T1G mmsd4148t1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMSD4148T3G mmsd4148t1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H11L3M pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF1ACEA70684749&compId=H11L3M.pdf?ci_sign=97f44a85c16d691187ed05abc6c8245169bdce3d
H11L3M
+1
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Case: DIP6
Mounting: THT
Kind of output: Schmitt trigger
Manufacturer series: H11LXM
Type of optocoupler: optocoupler
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Number of channels: 1
Insulation voltage: 4.17kV
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
95+0.76 EUR
103+0.69 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
H11L2M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC76CE73B3DE27&compId=H11L2M.pdf?ci_sign=afd07191113f7d108674ef17f17cf9cc7360db0c
H11L2M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Case: DIP6
Mounting: THT
Kind of output: Schmitt trigger
Manufacturer series: H11LXM
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
126+0.57 EUR
159+0.45 EUR
168+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 80
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H11L3SR2M H11L3M-D.PDF
H11L3SR2M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Case: PDIP6
Mounting: SMD
Kind of output: gate; logic
Manufacturer series: H11L3
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
78+0.92 EUR
96+0.75 EUR
102+0.71 EUR
250+0.68 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
FDMC3612-L701 fdmc3612-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Kind of channel: enhancement
Mounting: SMD
Case: WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 212mΩ
Power dissipation: 35W
Drain current: 12A
Pulsed drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
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ESD9B3.3ST5G esd9b-d.pdf
ESD9B3.3ST5G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
auf Bestellung 13502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
603+0.12 EUR
940+0.076 EUR
1134+0.063 EUR
1421+0.05 EUR
1774+0.04 EUR
1894+0.038 EUR
2000+0.037 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B6V8LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84B6V8LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Leakage current: 2µA
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
Manufacturer series: BZX84B
Semiconductor structure: single diode
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
532+0.13 EUR
680+0.11 EUR
1067+0.067 EUR
2049+0.035 EUR
2167+0.033 EUR
2500+0.032 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
2SC5242OTU fja4313-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BAT54M3T5G bat54m3-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBAT54M3T5G BAT54M3-D.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSB834WYTM pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE357BC2453C0D6&compId=KSB834W.PDF?ci_sign=5e08d8c1728eaed1043c581f02e74c574c58c4e5
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 1.5W; D2PAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.5W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 100...200
Frequency: 9MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: D2PAK
Produkt ist nicht verfügbar
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NCV33072DR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
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MC33071ADR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: single
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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NCS2003SN2T1G ncs2003-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: single
Produkt ist nicht verfügbar
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NCS20032DMR2G ncs2003-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Micro8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: Micro8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: dual
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NCS20032DR2G ncs2003-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: dual
Produkt ist nicht verfügbar
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NCS20032DTBR2G ncs2003-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; TSSOP8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: TSSOP8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: dual
Produkt ist nicht verfügbar
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DF01S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33
DF01S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 280W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.85 EUR
21+3.53 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 15
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NV25640DTHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF95E0D5&compId=NV25080-D.pdf?ci_sign=23500e7460fb21c7ea53d0f4eba6107d94cd3659
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...150°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Access time: 40ns
Memory: 64kb EEPROM
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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NV25640DWHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF9720D5&compId=NV25080-D.pdf?ci_sign=b60380137d4770a8ff1cc9cb62ac1c59ee8a0801
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...150°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Access time: 40ns
Memory: 64kb EEPROM
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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MURA220T3G mura215t3-d.pdf
MURA220T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 40A
Features of semiconductor devices: ultrafast switching
auf Bestellung 4985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
225+0.32 EUR
278+0.26 EUR
309+0.23 EUR
758+0.094 EUR
794+0.09 EUR
Mindestbestellmenge: 167
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NTTFS5C453NLTAG nttfs5c453nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTTFS5C453NLTWG nttfs5c453nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NVTFS5C453NLTAG nvtfs5c453nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NVTFS5C453NLWFTAG nvtfs5c453nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTH4L013N120M3S nth4l013n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTH4L014N120M3P nth4l014n120m3p-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
Produkt ist nicht verfügbar
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DTC114YM3T5G dtc114y-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
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DTC114YET1G dtc114y-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Current gain: 80...140
Produkt ist nicht verfügbar
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