Foto | Bezeichnung | Hersteller | Beschreibung |
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MC74HCT273ADTR2G | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MC74HCT273ADWG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: tube Trigger: positive-edge-triggered Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MC74HCT273ADWR2G | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MM74HCT273MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: HCT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MM74HCT273WMX | ONSEMI |
![]() Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Mounting: SMD Case: SO20WB Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Family: HCT Manufacturer series: HCT Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCP153MX330180TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,3.3V; 130mA; XDFN6 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: voltage regulator Output current: 130mA Input voltage: 1.9...5.25V Output voltage: 1.8V; 3.3V Number of channels: 2 Tolerance: ±2% Case: XDFN6 Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCP151AAMX330180TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,3.3V; 300mA; XDFN4 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.3A Input voltage: 1.7...5.5V Output voltage: 1.8V; 3.3V Number of channels: 2 Manufacturer series: NCP151 Tolerance: ±2% Case: XDFN4 Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MUR4100ERLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 70A Case: CASE267-05 Max. forward voltage: 1.85V Reverse recovery time: 75ns |
auf Bestellung 1392 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C3V3ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MC33275DT-3.3RKG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MC33275DT-2.5RKG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.5V Output current: 0.3A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MC33275DT-5.0RKG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MMBZ15VDLT1G | ONSEMI |
![]() Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; SOT23 Type of diode: TVS array Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common cathode; double Leakage current: 0.1µA Max. forward impulse current: 1.9A Max. off-state voltage: 12.8V Breakdown voltage: 15V Peak pulse power dissipation: 40W Version: ESD |
auf Bestellung 1818 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMJS0D9N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NVMJS0D9N04CLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NVMJST0D9N04CTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 531A; Idm: 900A; 278W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 531A Pulsed drain current: 900A Power dissipation: 278W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 1.07mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FDB52N20TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 52A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP52N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP34N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 180W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP167AFCTC350T2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 700mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.5V Output current: 0.7A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP167 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BZX79C8V2 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.7µA Manufacturer series: BZX79C |
auf Bestellung 1877 Stücke: Lieferzeit 14-21 Tag (e) |
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NCN6001DTBR2G | ONSEMI |
![]() Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape Case: TSSOP20 Application: for smart card application Type of integrated circuit: interface Mounting: SMD Kind of package: reel; tape Operating temperature: -25...85°C Supply voltage: 2.7...5.5V DC Kind of integrated circuit: card inerface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SZMMSZ5231BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Application: automotive industry Case: SOD123 Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
auf Bestellung 2683 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1123T-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMYS6D2N06CLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 440A; 31W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 20nC On-state resistance: 6.1mΩ Power dissipation: 31W Drain current: 71A Pulsed drain current: 440A Gate-source voltage: ±20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NVMYS2D2N06CLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 69nC On-state resistance: 2mΩ Power dissipation: 67W Drain current: 185A Pulsed drain current: 900A Gate-source voltage: ±20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NSV1C201MZ4T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 0.8W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BZX79C3V9 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.9V; bulk; CASE017AG; single diode; 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX79C4V3 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX79C3V6 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 15µA Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
NRVTS12120MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NRVTS12120MFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC74VHC1G00DTT1G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1937A2DR2G | ONSEMI |
![]() Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP1937A3DR2G | ONSEMI |
![]() ![]() Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP1937B1DR2G | ONSEMI |
![]() Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 215...285kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP1937B3DR2G | ONSEMI |
![]() Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP1937C4DR2G | ONSEMI |
![]() ![]() Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP1937C61DR2G | ONSEMI |
![]() Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
NTLUS020N03CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Pulsed drain current: 24A Power dissipation: 1.52W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1SMA5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 1.5W Zener voltage: 39V Manufacturer series: 1SMA59xxBT3G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
1SMB5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 3W Zener voltage: 39V Manufacturer series: 1SMB59xxBT3G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SZ1SMA5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 1.5W Zener voltage: 39V Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SZ1SMB5939BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 3W Zener voltage: 39V Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MBRF20L60CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.69V Max. forward impulse current: 0.24kA Kind of package: tube Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MMPQ3904 | ONSEMI |
![]() Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16 Type of transistor: NPN x4 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.8W Case: SO16 Current gain: 75 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MMPQ3906 | ONSEMI |
![]() Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16 Type of transistor: PNP x4 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.8W Case: SO16 Current gain: 75 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TIL117M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 Turn-on time: 10µs CTR@If: 50%@10mA Turn-off time: 10µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MBRS2H100T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.65V Load current: 2A Max. load current: 130A Max. off-state voltage: 100V Semiconductor structure: single diode Case: SMB |
auf Bestellung 2477 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRD5H100T4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Max. load current: 10A |
auf Bestellung 2493 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33153PG | ONSEMI |
![]() ![]() Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: DIP8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: tube Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC3506W | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ISL9V5036P3-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 360V Collector current: 31A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±10V Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FDMC0310AS-F127 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Case: MLP8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 52nC On-state resistance: 5.8mΩ Gate-source voltage: ±20V Drain current: 21A Drain-source voltage: 30V Power dissipation: 36W Pulsed drain current: 100A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC14042BDR2G | ONSEMI |
![]() Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: latch Number of channels: 4 Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Technology: CMOS Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
NCS21801SN2T1G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Case: SOT23-5 Number of channels: single Input offset current: 400pA Input bias current: 0.6nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCS21801SQ3T2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Case: SC70-5 Number of channels: single Input offset current: 400pA Input bias current: 0.6nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCV21801SN2T1G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA Mounting: SMT Operating temperature: -40...150°C Kind of package: reel; tape Case: SOT23-5 Number of channels: single Input offset current: 2.5nA Input bias current: 5nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NCV21801SQ3T2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC Mounting: SMT Operating temperature: -40...150°C Kind of package: reel; tape Case: SC70-5 Number of channels: single Input offset current: 2.5nA Input bias current: 5nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NCV8460ADR2G | ONSEMI |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD Kind of package: reel; tape Case: SO8 Kind of output: N-Channel Kind of integrated circuit: high-side Type of integrated circuit: power switch On-state resistance: 0.4Ω Number of channels: 1 Supply voltage: 6...36V DC Output current: 3A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MC74HCT273ADTR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74HCT273ADWG |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT273ADWR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT273MTCX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT273WMX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
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NCP153MX330180TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,3.3V; 130mA; XDFN6
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 130mA
Input voltage: 1.9...5.25V
Output voltage: 1.8V; 3.3V
Number of channels: 2
Tolerance: ±2%
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,3.3V; 130mA; XDFN6
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 130mA
Input voltage: 1.9...5.25V
Output voltage: 1.8V; 3.3V
Number of channels: 2
Tolerance: ±2%
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP151AAMX330180TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,3.3V; 300mA; XDFN4
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.3A
Input voltage: 1.7...5.5V
Output voltage: 1.8V; 3.3V
Number of channels: 2
Manufacturer series: NCP151
Tolerance: ±2%
Case: XDFN4
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,3.3V; 300mA; XDFN4
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.3A
Input voltage: 1.7...5.5V
Output voltage: 1.8V; 3.3V
Number of channels: 2
Manufacturer series: NCP151
Tolerance: ±2%
Case: XDFN4
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR4100ERLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
auf Bestellung 1392 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
97+ | 0.74 EUR |
110+ | 0.65 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
500+ | 0.43 EUR |
SZBZX84C3V3ET1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33275DT-3.3RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33275DT-2.5RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33275DT-5.0RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBZ15VDLT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; SOT23
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Max. forward impulse current: 1.9A
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Peak pulse power dissipation: 40W
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; SOT23
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Max. forward impulse current: 1.9A
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Peak pulse power dissipation: 40W
Version: ESD
auf Bestellung 1818 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
511+ | 0.14 EUR |
575+ | 0.12 EUR |
787+ | 0.091 EUR |
913+ | 0.078 EUR |
1793+ | 0.04 EUR |
NTMJS0D9N04CLTWG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMJS0D9N04CLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMJST0D9N04CTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 531A; Idm: 900A; 278W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 531A
Pulsed drain current: 900A
Power dissipation: 278W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.07mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 531A; Idm: 900A; 278W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 531A
Pulsed drain current: 900A
Power dissipation: 278W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.07mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDB52N20TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.73 EUR |
29+ | 2.5 EUR |
36+ | 2 EUR |
38+ | 1.9 EUR |
FDP52N20 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
37+ | 1.96 EUR |
39+ | 1.84 EUR |
100+ | 1.77 EUR |
FQP34N20 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
NCP167AFCTC350T2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 700mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.5V
Output current: 0.7A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 700mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.5V
Output current: 0.7A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Produkt ist nicht verfügbar
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BZX79C8V2 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.7µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.7µA
Manufacturer series: BZX79C
auf Bestellung 1877 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
782+ | 0.092 EUR |
971+ | 0.074 EUR |
1624+ | 0.044 EUR |
1877+ | 0.039 EUR |
NCN6001DTBR2G |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape
Case: TSSOP20
Application: for smart card application
Type of integrated circuit: interface
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...85°C
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: card inerface
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape
Case: TSSOP20
Application: for smart card application
Type of integrated circuit: interface
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...85°C
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: card inerface
Produkt ist nicht verfügbar
Im Einkaufswagen
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SZMMSZ5231BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
auf Bestellung 2683 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
385+ | 0.19 EUR |
481+ | 0.15 EUR |
662+ | 0.11 EUR |
975+ | 0.073 EUR |
2SB1123T-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
120+ | 0.6 EUR |
142+ | 0.5 EUR |
256+ | 0.28 EUR |
271+ | 0.26 EUR |
NVMYS6D2N06CLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 440A; 31W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 6.1mΩ
Power dissipation: 31W
Drain current: 71A
Pulsed drain current: 440A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 440A; 31W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 6.1mΩ
Power dissipation: 31W
Drain current: 71A
Pulsed drain current: 440A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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NVMYS2D2N06CLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 69nC
On-state resistance: 2mΩ
Power dissipation: 67W
Drain current: 185A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 69nC
On-state resistance: 2mΩ
Power dissipation: 67W
Drain current: 185A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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NSV1C201MZ4T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.8W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.8W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C3V9 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; CASE017AG; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; CASE017AG; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C4V3 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C3V6 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
Im Einkaufswagen
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NRVTS12120MFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NRVTS12120MFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MC74VHC1G00DTT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
98+ | 0.73 EUR |
NCP1937A2DR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCP1937A3DR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1937B1DR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 215...285kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 215...285kHz
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1937B3DR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1937C4DR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1937C61DR2G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen
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NTLUS020N03CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMA5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 1.5W
Zener voltage: 39V
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 1.5W
Zener voltage: 39V
Manufacturer series: 1SMA59xxBT3G
Produkt ist nicht verfügbar
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1SMB5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Produkt ist nicht verfügbar
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SZ1SMA5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 1.5W
Zener voltage: 39V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 1.5W
Zener voltage: 39V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZ1SMB5939BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MBRF20L60CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
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MMPQ3904 |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MMPQ3906 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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TIL117M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
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MBRS2H100T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
162+ | 0.44 EUR |
178+ | 0.4 EUR |
220+ | 0.33 EUR |
239+ | 0.3 EUR |
MBRD5H100T4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
67+ | 1.07 EUR |
72+ | 1 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
1000+ | 0.63 EUR |
MC33153PG | ![]() |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
GBPC3506W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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ISL9V5036P3-F085 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FDMC0310AS-F127 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
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MC14042BDR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of package: reel; tape
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of package: reel; tape
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NCS21801SN2T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCS21801SQ3T2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV21801SN2T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV21801SQ3T2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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NCV8460ADR2G |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Supply voltage: 6...36V DC
Output current: 3A
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Supply voltage: 6...36V DC
Output current: 3A
Application: automotive industry
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