| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NCP711ASNADJT1G | ONSEMI |
 Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.355V Output voltage: 1.2...17V Output current: 0.1A Case: TSOP5 Mounting: SMD Manufacturer series: NCP711 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...18V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTP360N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 96W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 25.3nC |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCH060N80-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 36.8A Pulsed drain current: 174A Power dissipation: 500W Case: TO247 Gate-source voltage: ±20V On-state resistance: 54mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.27µC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTD360N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Case: DPAK Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 25.3nC On-state resistance: 0.3Ω Drain current: 8.2A Gate-source voltage: ±20V Pulsed drain current: 32.5A Power dissipation: 96W Drain-source voltage: 800V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTPF360N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 25.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ISL9R1560P2-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC Case: TO220AC Semiconductor structure: single diode Load current: 15A Max. off-state voltage: 0.6kV Kind of package: tube Application: automotive industry Type of diode: rectifying Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS3669S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 24/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 14.5/7.1mΩ Mounting: SMD Gate charge: 24/34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS8018 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 110A Pulsed drain current: 680A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS8333L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 76A Pulsed drain current: 250A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS8320LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 192A Pulsed drain current: 300A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS86103L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Pulsed drain current: 414A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS86350ET80 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 140A Power dissipation: 187W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FPF1504BUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape Case: WLCSP4 Type of integrated circuit: power switch Version: ESD Active logical level: high Integrated circuit features: output discharge Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output current: 1.5A On-state resistance: 40mΩ Number of channels: 1 Supply voltage: 1...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MJ11028G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3 Mounting: THT Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Power dissipation: 300W Collector current: 50A Collector-emitter voltage: 60V Case: TO3 Kind of package: in-tray |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU4G | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FDMT800100DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 989A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 5.39mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NC7SZ125L6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NC7SZ125L6X-L22175 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BDV64BG | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3 Type of transistor: PNP Kind of package: tube Mounting: THT Case: TO247-3 Power dissipation: 125W Collector current: 10A Collector-emitter voltage: 100V Polarisation: bipolar Kind of transistor: Darlington |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC78M15CDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC78M15ABDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC78M15ACDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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ESD9L5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 5V Breakdown voltage: 5.4V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Kind of package: reel; tape Version: ESD Leakage current: 1µA |
auf Bestellung 8858 Stücke: Lieferzeit 14-21 Tag (e) |
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SD12CT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Version: ESD Kind of package: reel; tape |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH020F120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH020F120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH020P120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH020P120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 900V Drain current: 149A Case: PIM20 Topology: NTC thermistor; Vienna Rectifier Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 447A Power dissipation: 352W Technology: SiC Gate-source voltage: -8...18V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMSZ5254BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Case: SOD123 Manufacturer series: MMSZ52xxB |
auf Bestellung 2352 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV317BD2TR4G | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSUSB30L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: MicroPak10 Supply voltage: 3...4.3V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DPDT Quiescent current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSUSB30UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: UMLP10 Supply voltage: 3...4.3V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DPDT Quiescent current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSUSB31K8X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; USB switch; Ch: 2; US8; 3÷4.3VDC; reel,tape; 1uA Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: US8 Supply voltage: 3...4.3V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPST-NO x2 Quiescent current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSUSB43L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: MicroPak10 Supply voltage: 2.4...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DPDT Quiescent current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSUSB63UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer; USB switch Number of channels: 2 Case: UMLP12 Supply voltage: 2.7...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DP3T |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSUSB73UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer; USB switch Number of channels: 2 Case: UMLP16 Supply voltage: 2.5...4.4V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DP3T |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSUSB74MPX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer; USB switch Number of channels: 2 Case: MLP16 Supply voltage: 2.5...4.4V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DP4T |
Produkt ist nicht verfügbar |
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74LVX14M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LVX; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Quiescent current: 20µA Manufacturer series: LVX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74LVX14MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LVX Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVX |
auf Bestellung 1803 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP81292MNTXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCP81295MNTXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP81296MNTXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FFSD1065A | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 18A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 18A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MUR110G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: bulk Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
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| MUR110RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NLAS323USG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; Ch: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C; 2uA Type of integrated circuit: analog switch Mounting: SMD Case: US8 Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 2µA Number of channels: 2 Supply voltage: 2...5.5V DC Technology: CMOS Kind of output: SPST-NO x2 |
Produkt ist nicht verfügbar |
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MUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 140 |
Produkt ist nicht verfügbar |
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SMUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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FODM8061 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: Mini-flat 4pin Slew rate: 40kV/μs |
auf Bestellung 1767 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HCT05MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Kind of output: open drain Family: HCT |
auf Bestellung 1705 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HCT05MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Kind of output: open drain Family: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP139AFCT05ADJT2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6 Type of integrated circuit: voltage regulator Case: WLCSP6 Number of channels: 1 Mounting: SMD Operating temperature: -40...85°C Voltage drop: 80mV Output current: 1A Output voltage: 0.5...3V Input voltage: 0.5...5.5V Tolerance: ±1% Manufacturer series: NCP139 Kind of voltage regulator: adjustable; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74AC05DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: open drain Family: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPS-READER-GEVK | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323 Interface: I2C; SPI; UART Kind of connector: pin header; SMA development kits accessories features: Arduino Shield compatible |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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H11A1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: DIP6 CTR@If: 50%@10mA Turn-on time: 2µs Turn-off time: 2µs |
auf Bestellung 656 Stücke: Lieferzeit 14-21 Tag (e) |
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| H11A1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: PDIP6 Max. off-state voltage: 6V CTR@If: 50%@10mA Collector-emitter voltage: 30V Turn-on time: 2µs Manufacturer series: H11Ax Turn-off time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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H11A1TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 CTR@If: 20%@10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SZMM3Z10VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
auf Bestellung 1042 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMT800150DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 108nC On-state resistance: 13mΩ Gate-source voltage: ±20V Drain current: 62A Drain-source voltage: 150V Power dissipation: 156W Pulsed drain current: 561A Kind of package: reel; tape Polarisation: unipolar Case: DFNW8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP711ASNADJT1G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP360N80S3Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.36 EUR |
| 27+ | 2.75 EUR |
| 28+ | 2.59 EUR |
| FCH060N80-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD360N80S3Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.3nC
On-state resistance: 0.3Ω
Drain current: 8.2A
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Power dissipation: 96W
Drain-source voltage: 800V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.3nC
On-state resistance: 0.3Ω
Drain current: 8.2A
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Power dissipation: 96W
Drain-source voltage: 800V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF360N80S3Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9R1560P2-F085 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC
Case: TO220AC
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Application: automotive industry
Type of diode: rectifying
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC
Case: TO220AC
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Application: automotive industry
Type of diode: rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS3669S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8018 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8333L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 82+ | 0.87 EUR |
| 93+ | 0.77 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| FDMS8320LDC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86103L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86350ET80 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FPF1504BUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Case: WLCSP4
Type of integrated circuit: power switch
Version: ESD
Active logical level: high
Integrated circuit features: output discharge
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output current: 1.5A
On-state resistance: 40mΩ
Number of channels: 1
Supply voltage: 1...3.6V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Case: WLCSP4
Type of integrated circuit: power switch
Version: ESD
Active logical level: high
Integrated circuit features: output discharge
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output current: 1.5A
On-state resistance: 40mΩ
Number of channels: 1
Supply voltage: 1...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ11028G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Mounting: THT
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 60V
Case: TO3
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Mounting: THT
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 60V
Case: TO3
Kind of package: in-tray
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.57 EUR |
| GBU4G |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMT800100DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SZ125L6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.087 EUR |
| NC7SZ125L6X-L22175 |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.17 EUR |
| BDV64BG |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Collector current: 10A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Collector current: 10A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.53 EUR |
| 29+ | 2.47 EUR |
| 31+ | 2.35 EUR |
| 60+ | 2.29 EUR |
| MC78M15CDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC78M15ABDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC78M15ACDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD9L5.0ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
auf Bestellung 8858 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 353+ | 0.2 EUR |
| 407+ | 0.18 EUR |
| 712+ | 0.1 EUR |
| 1047+ | 0.068 EUR |
| 1107+ | 0.065 EUR |
| 5000+ | 0.062 EUR |
| SD12CT1G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Version: ESD
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Version: ESD
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 143+ | 0.5 EUR |
| 163+ | 0.44 EUR |
| 274+ | 0.26 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| NXH020F120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020F120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020P120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020P120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020U90MNF2PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5254BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Case: SOD123
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Case: SOD123
Manufacturer series: MMSZ52xxB
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 528+ | 0.14 EUR |
| 715+ | 0.1 EUR |
| 820+ | 0.087 EUR |
| 1042+ | 0.069 EUR |
| 1511+ | 0.047 EUR |
| 2101+ | 0.034 EUR |
| 2294+ | 0.031 EUR |
| NCV317BD2TR4G |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB30L10X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 3...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 3...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB30UMX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB31K8X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; US8; 3÷4.3VDC; reel,tape; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: US8
Supply voltage: 3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPST-NO x2
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; US8; 3÷4.3VDC; reel,tape; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: US8
Supply voltage: 3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPST-NO x2
Quiescent current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB43L10X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB63UMX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP12
Supply voltage: 2.7...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP12
Supply voltage: 2.7...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DP3T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB73UMX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB74MPX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVX14M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LVX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Quiescent current: 20µA
Manufacturer series: LVX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LVX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Quiescent current: 20µA
Manufacturer series: LVX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVX14MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LVX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LVX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 138+ | 0.52 EUR |
| 153+ | 0.47 EUR |
| 177+ | 0.4 EUR |
| 257+ | 0.28 EUR |
| 272+ | 0.26 EUR |
| NCP81292MNTXG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81295MNTXG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81296MNTXG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSD1065A |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 18A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 18A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 18A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 18A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR110G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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| MUR110RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
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| NLAS323USG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C; 2uA
Type of integrated circuit: analog switch
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 2µA
Number of channels: 2
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of output: SPST-NO x2
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C; 2uA
Type of integrated circuit: analog switch
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 2µA
Number of channels: 2
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of output: SPST-NO x2
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| MUN5235DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
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| SMUN5235DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| FODM8061 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
auf Bestellung 1767 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 32+ | 2.27 EUR |
| 34+ | 2.14 EUR |
| 100+ | 2.06 EUR |
| MM74HCT05MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
auf Bestellung 1705 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 210+ | 0.34 EUR |
| 222+ | 0.32 EUR |
| MM74HCT05MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
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| NCP139AFCT05ADJT2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6
Type of integrated circuit: voltage regulator
Case: WLCSP6
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 80mV
Output current: 1A
Output voltage: 0.5...3V
Input voltage: 0.5...5.5V
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: adjustable; LDO; linear
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6
Type of integrated circuit: voltage regulator
Case: WLCSP6
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 80mV
Output current: 1A
Output voltage: 0.5...3V
Input voltage: 0.5...5.5V
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: adjustable; LDO; linear
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| MC74AC05DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
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| SPS-READER-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
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| H11A1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 50%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 50%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 185+ | 0.39 EUR |
| 209+ | 0.34 EUR |
| 230+ | 0.31 EUR |
| H11A1SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Turn-on time: 2µs
Manufacturer series: H11Ax
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Turn-on time: 2µs
Manufacturer series: H11Ax
Turn-off time: 2µs
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| H11A1TVM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
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| SZMM3Z10VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
auf Bestellung 1042 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 511+ | 0.14 EUR |
| 691+ | 0.1 EUR |
| 792+ | 0.09 EUR |
| 1042+ | 0.069 EUR |
| FDMT800150DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 108nC
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 62A
Drain-source voltage: 150V
Power dissipation: 156W
Pulsed drain current: 561A
Kind of package: reel; tape
Polarisation: unipolar
Case: DFNW8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 108nC
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 62A
Drain-source voltage: 150V
Power dissipation: 156W
Pulsed drain current: 561A
Kind of package: reel; tape
Polarisation: unipolar
Case: DFNW8
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